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Nevertheless, conventional phase-change random access memory (PCRAM) still suffers from fundamental device-level limitations because it relies on bulk Joule heating, causing severe thermal dissipation and limited switching efficiency. This work proposes an electrochemical metallization (ECM)-induced localized phase-transition strategy based on Ag\/C-doped Sb2Te (C2ST21). Transient Ag conductive pathways confine current and thermal accumulation to realize localized phase-transition switching. Carbon doping stabilizes the amorphous lattice and suppresses Ag diffusion for improved reliability. Benefiting from synergistic ECM\u2013phase transition coupling, the device achieves 6 ns ultrafast switching, 0.6 pJ ultralow RESET energy, and 4 \u00d7 105 cycle endurance. Its highly linear conductance modulation enables 96.2% MNIST recognition accuracy, offering a feasible route for energy-efficient neuromorphic computing systems.<\/jats:p>","DOI":"10.1021\/acs.nanolett.6c02862","type":"journal-article","created":{"date-parts":[[2026,8,4]],"date-time":"2026-08-04T14:03:53Z","timestamp":1785852233000},"page":"10540-10546","source":"Crossref","is-referenced-by-count":0,"title":["Electrochemical\nMetallization-Induced Localized Phase\nTransition for Integrated Memory and Neuromorphic Computing"],"prefix":"10.1021","volume":"26","author":[{"given":"Peng","family":"Xu","sequence":"first","affiliation":[{"name":"Donghua University , , ,","place":["Shanghai, China, 201620"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5554-7316","authenticated-orcid":true,"given":"Shiwei","family":"Gao","sequence":"additional","affiliation":[{"name":"Donghua University , , ,","place":["Shanghai, China, 201620"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ningning","family":"Rong","sequence":"additional","affiliation":[{"name":"Donghua University , , ,","place":["Shanghai, China, 201620"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaolin","family":"Liu","sequence":"additional","affiliation":[{"name":"Donghua University , , ,","place":["Shanghai, China, 201620"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Di","family":"Li","sequence":"additional","affiliation":[{"name":"Donghua University , , ,","place":["Shanghai, China, 201620"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7186-4744","authenticated-orcid":true,"given":"Sannian","family":"Song","sequence":"additional","affiliation":[{"name":"Chinese Academy of Sciences , , ,","place":["Shanghai, China, 200050"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhitang","family":"Song","sequence":"additional","affiliation":[{"name":"Chinese Academy of Sciences , , ,","place":["Shanghai, China, 200050"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3734-8417","authenticated-orcid":true,"given":"Liangcai","family":"Wu","sequence":"additional","affiliation":[{"name":"Donghua University , , ,","place":["Shanghai, China, 201620"]},{"name":"Chinese Academy of Sciences , , ,","place":["Shanghai, China, 200050"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,7,31]]},"reference":[{"issue":"8059","key":"2026081209070219600_cit1","doi-asserted-by":"publisher","first-page":"613","DOI":"10.1038\/s41586-025-08733-5","article-title":"The growing memristor\nindustry","volume":"640","author":"Lanza","year":"2025","journal-title":"Nature"},{"issue":"15","key":"2026081209070219600_cit2","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202300458","article-title":"Neural Architecture\nSearch with In-Memory Multiply-Accumulate and In-Memory Rank Based\non Coating Layer Optimized C-Doped Ge2Sb2Te5 Phase Change Memory","volume":"34","author":"Yan","year":"2024","journal-title":"Adv. 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