{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T13:45:03Z","timestamp":1791985503950,"version":"4.4.0"},"reference-count":42,"publisher":"American Chemical Society (ACS)","issue":"40","license":[{"start":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T00:00:00Z","timestamp":1790726400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T00:00:00Z","timestamp":1790726400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T00:00:00Z","timestamp":1790726400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52472250"],"award-info":[{"award-number":["52472250"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Shenzhen Science and Technology Programs","award":["GXWD20220811164433002"],"award-info":[{"award-number":["GXWD20220811164433002"]}]},{"name":"Shenzhen Science and Technology Programs","award":["JCYJ20241202123506009"],"award-info":[{"award-number":["JCYJ20241202123506009"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,14]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional (2D) van der Waals (vdW) materials with sliding ferroelectricity exhibit an enormous potential for next-generation nanodevices. Among these, 1T\u2032-ReS2 with an ultralow symmetry stands out as a pivotal candidate. However, the fundamental scientific mechanism underlying sliding ferroelectricity in 1T\u2032-ReS2 remains poorly understood due to the complexity of its crystal structure. By integrating STEM, DFT calculations, and KPFM, this work resolves the correlation between AA\/AB stacking and polarization in 1T\u2032-ReS2. PFM and STEM characterizations further reveal that the observed ferroelectric-like PFM signals originate from flexoelectric-like wrinkles rather than from intrinsic ferroelectric switching. Finally, device measurements provide evidence of sliding ferroelectricity in even-layer AB-stacked ReS2 and demonstrate its application potential.<\/jats:p>","DOI":"10.1021\/acs.nanolett.6c02868","type":"journal-article","created":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T01:01:29Z","timestamp":1790816489000},"page":"13794-13801","source":"Crossref","is-referenced-by-count":0,"title":["Layer Dependent\nFerroelectricity and Electromechanically\nCoupled Polarization in Two-Dimensional 1T\u2032-ReS2"],"prefix":"10.1021","volume":"26","author":[{"given":"Zhengyue","family":"Li","sequence":"first","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinfeng","family":"Yang","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yinfei","family":"Xie","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yang","family":"He","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaonan","family":"Wang","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bo","family":"Zou","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bingxuan","family":"Zhu","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8910-5743","authenticated-orcid":true,"given":"Zhongqi","family":"Ren","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chu","family":"Xiao","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yangyang","family":"Si","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuxuan","family":"Yang","sequence":"additional","affiliation":[{"name":"Xi\u2019an Jiaotong University , , ,","place":["Xi\u2019an, China, 710049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kangjin","family":"Zhou","sequence":"additional","affiliation":[{"name":"Xi\u2019an Jiaotong University , , ,","place":["Xi\u2019an, China, 710049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0737-3614","authenticated-orcid":true,"given":"Jingkai","family":"Qin","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chengyan","family":"Xu","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1909-7511","authenticated-orcid":true,"given":"Hao","family":"Tian","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150001"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7303-379X","authenticated-orcid":true,"given":"Haijun","family":"Wu","sequence":"additional","affiliation":[{"name":"Xi\u2019an Jiaotong University , , ,","place":["Xi\u2019an, China, 710049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1429-0611","authenticated-orcid":true,"given":"Huarui","family":"Sun","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology Shenzhen , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,30]]},"reference":[{"key":"2026101408322695300_cit1","doi-asserted-by":"publisher","first-page":"193103","DOI":"10.1063\/1.4829268","article-title":"High-temperature ferro-electricity\nin two-dimensional atomic crystal","volume":"103","author":"Kan","year":"2013","journal-title":"Appl. Phys.\nLett."},{"key":"2026101408322695300_cit2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.112.157601","article-title":"Emergence of ferroelectricity\nat a metal-semiconductor\ntransition in a 1T monolayer of MoS2","volume":"112","author":"Shirodkar","year":"2014","journal-title":"Phys.\nRev. Lett."},{"key":"2026101408322695300_cit3","doi-asserted-by":"publisher","first-page":"3808","DOI":"10.1021\/acs.nanolett.5b00491","article-title":"CuInP2S6 Room Temperature Layered Ferroelectric","volume":"15","author":"Belianinov","year":"2015","journal-title":"Nano Lett."},{"key":"2026101408322695300_cit4","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1126\/science.aad8609","article-title":"Discovery of robust in-plane ferroelectricity in atomic-thick SnTe","volume":"353","author":"Chang","year":"2016","journal-title":"Science"},{"key":"2026101408322695300_cit5","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms12357","article-title":"Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes","volume":"7","author":"Liu","year":"2016","journal-title":"Nat. Commun."},{"key":"2026101408322695300_cit6","doi-asserted-by":"publisher","first-page":"5508","DOI":"10.1021\/acs.nanolett.7b02198","article-title":"Out-of-Plane Piezoelectricity and Ferroelectricity in Layered \u03b1-In2Se3\nNanoflakes","volume":"17","author":"Zhou","year":"2017","journal-title":"Nano Lett."},{"key":"2026101408322695300_cit7","doi-asserted-by":"publisher","first-page":"1253","DOI":"10.1021\/acs.nanolett.7b04852","article-title":"Intercorrelated In-Plane\nand Out-of-Plane Ferroelectricity in Ultrathin\nTwo-Dimensional Layered Semiconductor In2Se3","volume":"18","author":"Cui","year":"2018","journal-title":"Nano Lett."},{"key":"2026101408322695300_cit8","doi-asserted-by":"publisher","first-page":"1803738","DOI":"10.1002\/adfm.201803738","article-title":"Room-Temperature\nFerroelectricity in Hexagonally Layered \u03b1-In2Se3 Nanoflakes\ndown to the Monolayer Limit","volume":"28","author":"Xue","year":"2018","journal-title":"Adv. Funct. Mater."},{"key":"2026101408322695300_cit9","doi-asserted-by":"publisher","first-page":"252903","DOI":"10.1063\/1.5097842","article-title":"Room-temperature\nout-of-plane and in-plane ferroelectricity of two-dimensional \u03b2-InSe\nnanoflakes","volume":"114","author":"Hu","year":"2019","journal-title":"Appl. Phys. Lett."},{"key":"2026101408322695300_cit10","doi-asserted-by":"publisher","first-page":"1775","DOI":"10.1038\/s41467-019-09669-x","article-title":"Room-temperature ferroelectricity\nin MoTe(2) down to the atomic monolayer\nlimit","volume":"10","author":"Yuan","year":"2019","journal-title":"Nat. Commun."},{"key":"2026101408322695300_cit11","doi-asserted-by":"publisher","first-page":"2428","DOI":"10.1038\/s41467-020-16291-9","article-title":"Purely in-plane ferroelectricity in monolayer\nSnS at room temperature","volume":"11","author":"Higashitarumizu","year":"2020","journal-title":"Nat. Commun."},{"key":"2026101408322695300_cit12","doi-asserted-by":"publisher","first-page":"18","DOI":"10.1038\/s41699-022-00298-5","article-title":"Direct observation\nof ferroelectricity in two-dimensional MoS2","volume":"6","author":"Lipatov","year":"2022","journal-title":"npj 2D Mater. Appl."},{"key":"2026101408322695300_cit13","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202106951","article-title":"Atomic Visualization\nand Switching of Ferroelectric Order in beta-In2Se3\nFilms at the Single Layer Limit","volume":"34","author":"Zhang","year":"2022","journal-title":"Adv. Mater."},{"key":"2026101408322695300_cit14","doi-asserted-by":"publisher","first-page":"2757","DOI":"10.1038\/s41467-023-38445-1","article-title":"Emergence of ferroelectricity\nin a nonferroelectric monolayer","volume":"14","author":"Li","year":"2023","journal-title":"Nat. Commun."},{"key":"2026101408322695300_cit15","doi-asserted-by":"publisher","first-page":"6382","DOI":"10.1021\/acsnano.7b02756","article-title":"Binary Compound Bilayer\nand Multilayer with Vertical Polarizations:\nTwo-Dimensional Ferroelectrics, Multiferroics, and Nanogenerators","volume":"11","author":"Li","year":"2017","journal-title":"ACS Nano"},{"key":"2026101408322695300_cit16","doi-asserted-by":"publisher","first-page":"336","DOI":"10.1038\/s41586-018-0336-3","article-title":"Ferroelectric switching of a two-dimensional metal","volume":"560","author":"Fei","year":"2018","journal-title":"Nature"},{"key":"2026101408322695300_cit17","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aax5080","article-title":"A room-temperature ferroelectric semimetal","volume":"5","author":"Sharma","year":"2019","journal-title":"Science Advances"},{"key":"2026101408322695300_cit18","doi-asserted-by":"publisher","first-page":"367","DOI":"10.1038\/s41565-021-01059-z","article-title":"Interfacial ferroelectricity in rhombohedral-stacked bilayer transition\nmetal dichalcogenides","volume":"17","author":"Wang","year":"2022","journal-title":"Nat. Nanotechnol"},{"key":"2026101408322695300_cit19","doi-asserted-by":"publisher","first-page":"1462","DOI":"10.1126\/science.abe8177","article-title":"Interfacial ferroelectricity by van der Waals sliding","volume":"372","author":"Vizner Stern","year":"2021","journal-title":"Science"},{"key":"2026101408322695300_cit20","doi-asserted-by":"publisher","first-page":"1458","DOI":"10.1126\/science.abd3230","article-title":"Stacking-engineered ferroelectricity in bilayer boron\nnitride","volume":"372","author":"Yasuda","year":"2021","journal-title":"Science"},{"key":"2026101408322695300_cit21","doi-asserted-by":"publisher","first-page":"19659","DOI":"10.1039\/D1TA02645C","article-title":"Sliding ferroelectricity\nin two-dimensional MoA2N4(A = Si or Ge) bilayers: high polarizations\nand Moire\u0301 potentials","volume":"9","author":"Zhong","year":"2021","journal-title":"Journal of Materials\nChemistry A"},{"key":"2026101408322695300_cit22","doi-asserted-by":"publisher","first-page":"152901","DOI":"10.1063\/5.0198134","article-title":"Sliding\nferroelectricity in kagome-B2 \u00d7 3 (X = S, Se, Te) bilayers","volume":"124","author":"Guo","year":"2024","journal-title":"Appl. Phys. Lett."},{"key":"2026101408322695300_cit23","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.128.067601","article-title":"Room-Temperature Ferroelectricity\nin 1T;\u2019-ReS_2 Multilayers","volume":"128","author":"Wan","year":"2022","journal-title":"Phys. Rev.\nLett."},{"key":"2026101408322695300_cit24","doi-asserted-by":"publisher","first-page":"11249","DOI":"10.1021\/acsnano.5b04851","article-title":"Single-Layer ReS2: Two-Dimensional\nSemiconductor with Tunable In-Plane\nAnisotropy","volume":"9","author":"Lin","year":"2015","journal-title":"ACS Nano"},{"key":"2026101408322695300_cit25","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201908311","article-title":"Stacking-Order-Driven\nOptical Properties and Carrier Dynamics in\nReS2","volume":"32","author":"Zhou","year":"2020","journal-title":"Adv. Mater."},{"key":"2026101408322695300_cit26","doi-asserted-by":"publisher","first-page":"2300111","DOI":"10.1002\/adom.202300111","article-title":"Second Harmonic\nGeneration in Exfoliated Few-Layer ReS2","volume":"11","author":"Song","year":"2023","journal-title":"Advanced\nOptical Materials"},{"key":"2026101408322695300_cit27","doi-asserted-by":"publisher","first-page":"35029","DOI":"10.1021\/acsnano.4c14162","article-title":"Large-Area Aligned Growth of Low-Symmetry 2D ReS2 on a High-Symmetry\nSurface","volume":"18","author":"Chen","year":"2024","journal-title":"ACS Nano"},{"key":"2026101408322695300_cit28","doi-asserted-by":"publisher","first-page":"405","DOI":"10.1021\/acsphotonics.0c01225","article-title":"Nonlinear\nOptical Absorption of ReS2 Driven by Stacking Order","volume":"8","author":"Zhou","year":"2021","journal-title":"ACS Photonics"},{"key":"2026101408322695300_cit29","doi-asserted-by":"publisher","first-page":"4053","DOI":"10.1002\/adma.201506171","article-title":"Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect\nMonolayers","volume":"28","author":"Desai","year":"2016","journal-title":"Adv. Mater."},{"key":"2026101408322695300_cit30","doi-asserted-by":"publisher","first-page":"10463","DOI":"10.1021\/acsnano.8b06101","article-title":"Mechanism of Gold-Assisted\nExfoliation of Centimeter-Sized Transition-Metal\nDichalcogenide Monolayers","volume":"12","author":"Velicky","year":"2018","journal-title":"ACS Nano"},{"key":"2026101408322695300_cit31","doi-asserted-by":"publisher","first-page":"3485","DOI":"10.1021\/acsphotonics.8b00685","article-title":"Extraordinary Second\nHarmonic Generation in ReS2 Atomic Crystals","volume":"5","author":"Song","year":"2018","journal-title":"ACS Photonics"},{"key":"2026101408322695300_cit32","doi-asserted-by":"publisher","first-page":"3252","DOI":"10.1038\/ncomms4252","article-title":"Monolayer behaviour in bulk ReS2 due to electronic and vibrational\ndecoupling","volume":"5","author":"Tongay","year":"2014","journal-title":"Nat. Commun."},{"key":"2026101408322695300_cit33","doi-asserted-by":"publisher","first-page":"6404","DOI":"10.1021\/acsnano.2c00514","article-title":"Electrically Tunable Second Harmonic Generation in Atomically Thin\nReS(2)","volume":"16","author":"Wang","year":"2022","journal-title":"ACS Nano"},{"key":"2026101408322695300_cit34","first-page":"1136","article-title":"Phase Field Study on\nDomain Structure Evolution of BaTiO3 Nano Single\nCrystal Thin Films under Applied Electric Field","volume":"53","author":"Li","year":"2024","journal-title":"Journal of Synthetic Crystals"},{"key":"2026101408322695300_cit35","doi-asserted-by":"publisher","first-page":"6313","DOI":"10.1038\/s41467-025-61756-4","article-title":"Emergence\nof sliding ferroelectricity in naturally parallel-stacked\nmultilayer ReSe(2) semiconductor","volume":"16","author":"Xue","year":"2025","journal-title":"Nat. Commun."},{"key":"2026101408322695300_cit36","doi-asserted-by":"publisher","first-page":"1681","DOI":"10.1021\/nl4001635","article-title":"Flexural electromechanical\ncoupling: a nanoscale emergent\nproperty of boron nitride bilayers","volume":"13","author":"Duerloo","year":"2013","journal-title":"Nano Lett."},{"key":"2026101408322695300_cit37","doi-asserted-by":"publisher","first-page":"16555","DOI":"10.1039\/C5NR04722F","article-title":"Flexoelectricity in\ntwo-dimensional crystalline and\nbiological membranes","volume":"7","author":"Ahmadpoor","year":"2015","journal-title":"Nanoscale"},{"key":"2026101408322695300_cit38","doi-asserted-by":"publisher","first-page":"033403","DOI":"10.1103\/PhysRevB.77.033403","article-title":"Electronic flexoelectricity\nin low-dimensional systems","volume":"77","author":"Kalinin","year":"2008","journal-title":"Phys. Rev. B"},{"key":"2026101408322695300_cit39","doi-asserted-by":"publisher","first-page":"054105","DOI":"10.1103\/PhysRevB.99.054105","article-title":"Intrinsic bending flexoelectric constants\nin two-dimensional materials","volume":"99","author":"Zhuang","year":"2019","journal-title":"Phys. Rev. B"},{"key":"2026101408322695300_cit40","doi-asserted-by":"publisher","first-page":"7696","DOI":"10.1038\/s41467-022-35339-6","article-title":"Sliding induced multiple\npolarization states in two-dimensional ferroelectrics","volume":"13","author":"Meng","year":"2022","journal-title":"Nat. Commun."},{"key":"2026101408322695300_cit41","doi-asserted-by":"publisher","first-page":"466","DOI":"10.1038\/s41928-020-0441-9","article-title":"High tunnelling electroresistance\nin a ferroelectric van der Waals\nheterojunction via giant barrier height modulation","volume":"3","author":"Wu","year":"2020","journal-title":"Nat. Electron."},{"key":"2026101408322695300_cit42","doi-asserted-by":"publisher","first-page":"8470","DOI":"10.1007\/s12274-022-4418-z","article-title":"Reliable and broad-range layer identification of Au-assisted\nexfoliated\nlarge area MoS2 and WS2 using reflection spectroscopic fingerprints","volume":"15","author":"Zou","year":"2022","journal-title":"Nano Research"}],"container-title":["Nano Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.nanolett.6c02868","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/nalefd\/article-pdf\/doi\/10.1021\/acs.nanolett.6c02868\/68720475\/acs.nanolett.6c02868.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/nalefd\/article-pdf\/doi\/10.1021\/acs.nanolett.6c02868\/68720475\/acs.nanolett.6c02868.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T12:49:16Z","timestamp":1791982156000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/nalefd\/article\/26\/40\/13794\/5443033\/Layer-Dependent-Ferroelectricity-and"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,30]]},"references-count":42,"journal-issue":{"issue":"40","published-online":{"date-parts":[[2026,9,30]]},"published-print":{"date-parts":[[2026,10,14]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.nanolett.6c02868","relation":{},"ISSN":["1530-6984","1530-6992"],"issn-type":[{"value":"1530-6984","type":"print"},{"value":"1530-6992","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,30]]}}}