{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T14:00:36Z","timestamp":1790776836520,"version":"4.1.0"},"reference-count":27,"publisher":"American Chemical Society (ACS)","issue":"38","license":[{"start":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T00:00:00Z","timestamp":1789430400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T00:00:00Z","timestamp":1789430400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T00:00:00Z","timestamp":1789430400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2022-NR070220"],"award-info":[{"award-number":["RS-2022-NR070220"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["1415187363"],"award-info":[{"award-number":["1415187363"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["RS-2023-00232222"],"award-info":[{"award-number":["RS-2023-00232222"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"name":"TANAKA Precious Metal Technologies"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,30]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Iridium telluride thin films are promising materials for electronic and optoelectronic applications, but their low-temperature deposition remains challenging. Although atomic layer deposition (ALD) is well-suited for low-temperature thin-film growth, ALD of platinum-group metal (PGM) tellurides is still largely unexplored because of limited precursor\/reactant combinations and the inherent nucleation delay of iridium ALD. Here we report the first ALD process for Ir-rich IrTex thin films using tricarbonyl(\u03b7-1,2,3-tri-tert-butylcyclopropenyl)iridium (TICP) and bis(trimethylsilyl) telluride (BTMS-Te)\/methanol (MeOH) as the iridium precursor and tellurium reactant, respectively. Furthermore, incorporating an intermediate O2 step established a surface-reaction-controlled ABC-type process. Compared with the AB-type process, this strategy increased the nucleation density by \u223c41% and the average nucleus size by \u223c2.6-fold, enabling the formation of continuous ultrathin IrTex films. Optimized IrTex\/n-Si photodetectors exhibited self-powered broadband photoresponse in the 400\u20131550 nm range. These findings demonstrate a practical strategy for overcoming nucleation-limited growth during the ALD of PGM tellurides.<\/jats:p>","DOI":"10.1021\/acs.nanolett.6c03219","type":"journal-article","created":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T10:02:53Z","timestamp":1789466573000},"page":"12941-12948","source":"Crossref","is-referenced-by-count":0,"title":["Surface-Reaction-Controlled\nInitial Growth of Ir-Rich\nIrTe\n                    <i>x<\/i>\n                    Thin Films via ABC-Type Atomic Layer\nDeposition"],"prefix":"10.1021","volume":"26","author":[{"given":"Minji","family":"Kim","sequence":"first","affiliation":[{"name":"Yonsei University , , Seodaemun-gu , ,","place":["Seoul, South Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0730-829X","authenticated-orcid":true,"given":"Jaehyeok","family":"Kim","sequence":"additional","affiliation":[{"name":"Yonsei University , , Seodaemun-gu , ,","place":["Seoul, South Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-7197-7794","authenticated-orcid":true,"given":"Sojeong","family":"Eom","sequence":"additional","affiliation":[{"name":"Yonsei University , , Seodaemun-gu , ,","place":["Seoul, South Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jihoon","family":"Park","sequence":"additional","affiliation":[{"name":"Yonsei University , , Seodaemun-gu , ,","place":["Seoul, South Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-9714-647X","authenticated-orcid":true,"given":"Jisang","family":"Yoo","sequence":"additional","affiliation":[{"name":"Yonsei University , , Seodaemun-gu , ,","place":["Seoul, South Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seunggyu","family":"Na","sequence":"additional","affiliation":[{"name":"Yonsei University , , Seodaemun-gu , ,","place":["Seoul, South Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5236-0548","authenticated-orcid":true,"given":"Shinichi","family":"Kato","sequence":"additional","affiliation":[{"name":"Tsukuba Technical Center , , ,","place":["Ibaraki, Japan, 300-4247"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yusuke","family":"Ohshima","sequence":"additional","affiliation":[{"name":"Tsukuba Technical Center , , ,","place":["Ibaraki, Japan, 300-4247"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kenichi","family":"Inoue","sequence":"additional","affiliation":[{"name":"Tsukuba Technical Center , , ,","place":["Ibaraki, Japan, 300-4247"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5393-2053","authenticated-orcid":true,"given":"Hyungjun","family":"Kim","sequence":"additional","affiliation":[{"name":"Yonsei University , , Seodaemun-gu , ,","place":["Seoul, South Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,15]]},"reference":[{"issue":"8","key":"2026093009102813300_cit1","doi-asserted-by":"publisher","first-page":"e202300686","DOI":"10.1002\/celc.202300686","article-title":"Synthesis and Electrocatalytic Applications of Noble Metal Chalcogenides\nNanomaterials","volume":"11","author":"Hu","year":"2024","journal-title":"ChemElectroChem"},{"key":"2026093009102813300_cit2","doi-asserted-by":"publisher","first-page":"2407233","DOI":"10.1002\/smll.202407233","article-title":"Direct Syntheses\nof\n2D Noble Transition Metal Dichalcogenides Toward Electronics, Optoelectronics,\nand Electrocatalysis-Related Applications","volume":"22","author":"Wang","year":"2026","journal-title":"Small"},{"issue":"17","key":"2026093009102813300_cit3","doi-asserted-by":"publisher","first-page":"8241","DOI":"10.1021\/acs.nanolett.3c02396","article-title":"Uncooled Mid-Infrared\nSensing Enabled by Chip-Integrated Low-Temperature-Grown\n2D PdTe2 Dirac Semimetal","volume":"23","author":"Zeng","year":"2023","journal-title":"Nano Lett."},{"issue":"6","key":"2026093009102813300_cit4","doi-asserted-by":"publisher","first-page":"1891","DOI":"10.1021\/acs.nanolett.3c03666","article-title":"Reversible Transition\nof Semiconducting PtSe2 and Metallic\nPtTe2 for Scalable All-2D Edge-Contacted FETs","volume":"24","author":"Han","year":"2024","journal-title":"Nano Lett."},{"issue":"1","key":"2026093009102813300_cit5","doi-asserted-by":"publisher","first-page":"3157","DOI":"10.1038\/s41467-021-23310-w","article-title":"Superconductivity\nEmerging from a\nStripe Charge Order in IrTe2 Nanoflakes","volume":"12","author":"Park","year":"2021","journal-title":"Nat. Commun."},{"issue":"7","key":"2026093009102813300_cit6","doi-asserted-by":"publisher","first-page":"2764","DOI":"10.1021\/acs.chemmater.9b04117","article-title":"Highly Active\nRhenium-, Ruthenium-, and Iridium-Based Dichalcogenide Electrocatalysts\nfor Oxygen Reduction and Oxygen Evolution Reactions in Aprotic Media","volume":"32","author":"Majidi","year":"2020","journal-title":"Chem. Mater."},{"key":"2026093009102813300_cit7","doi-asserted-by":"publisher","first-page":"66","DOI":"10.1038\/s43586-025-00435-6","article-title":"Atomic Layer Deposition","volume":"5","author":"Kessels","year":"2025","journal-title":"Nat.\nRev. Methods Primers"},{"issue":"7","key":"2026093009102813300_cit8","doi-asserted-by":"publisher","first-page":"575","DOI":"10.3390\/cryst10070575","article-title":"Chemical Vapor Deposition\nof IrTe2 Thin Films","volume":"10","author":"Zhou","year":"2020","journal-title":"Crystals"},{"key":"2026093009102813300_cit9","doi-asserted-by":"publisher","first-page":"2400463","DOI":"10.1002\/smll.202400463","article-title":"Two-Step Conversion\nof Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides\nand Heterostructures","volume":"21","author":"Altvater","year":"2025","journal-title":"Small"},{"issue":"4","key":"2026093009102813300_cit10","doi-asserted-by":"publisher","first-page":"1533","DOI":"10.1021\/acs.chemmater.1c03142","article-title":"Atomic Layer Deposition\nof Iridium Using a Tricarbonyl Cyclopropenyl Precursor and Oxygen","volume":"34","author":"Park","year":"2022","journal-title":"Chem. Mater."},{"issue":"16","key":"2026093009102813300_cit11","doi-asserted-by":"publisher","first-page":"15776","DOI":"10.1021\/acsnano.3c03559","article-title":"Atomic Layer\nDeposition Route to\nScalable, Electronic-Grade van der Waals Te Thin Films","volume":"17","author":"Kim","year":"2023","journal-title":"ACS Nano"},{"issue":"40","key":"2026093009102813300_cit12","doi-asserted-by":"publisher","first-page":"12433","DOI":"10.1021\/acs.nanolett.4c02969","article-title":"Wafer-Scale Atomic\nLayer-Deposited TeOx\/Te Heterostructure p-Type Thin-Film Transistors","volume":"24","author":"Tan","year":"2024","journal-title":"Nano Lett."},{"issue":"28","key":"2026093009102813300_cit13","doi-asserted-by":"publisher","first-page":"6486","DOI":"10.1021\/acs.jpclett.3c01369","article-title":"Nucleation\nand Layer Closure Behavior of Iridium Films\nGrown Using Atomic Layer Deposition","volume":"14","author":"Chung","year":"2023","journal-title":"J. Phys.\nChem. Lett."},{"issue":"39","key":"2026093009102813300_cit14","doi-asserted-by":"publisher","first-page":"e75352","DOI":"10.1002\/advs.75352","article-title":"One-Dimensional\nRuIrTe Nanotubes with Amorphous Surface as a Highly Active and Stable\nElectrocatalyst Toward Oxygen Evolution Reaction in Acidic Media","volume":"13","author":"Zhao","year":"2026","journal-title":"Adv. Sci."},{"issue":"1","key":"2026093009102813300_cit15","doi-asserted-by":"publisher","first-page":"614","DOI":"10.1021\/acscatal.5c07074","article-title":"Electrochemical\nSurface Modification of Layered IrTe2 Films for Enhanced\nOxygen Evolution Reaction","volume":"16","author":"Seoh","year":"2026","journal-title":"ACS Catal."},{"issue":"2","key":"2026093009102813300_cit16","doi-asserted-by":"publisher","first-page":"101580","DOI":"10.1016\/j.checat.2025.101580","article-title":"Reconstructing a Stable Surface on\nPyrite-Type Iridium Telluride to Promote the Oxygen Evolution Reaction\nin Acid","volume":"6","author":"Wang","year":"2026","journal-title":"Chem. Catal."},{"key":"2026093009102813300_cit17","doi-asserted-by":"publisher","first-page":"e70361","DOI":"10.1002\/eem2.70361","article-title":"Asymmetric\nDual-Electron Bridge Via Gradient Orbital Coupling for Robust Alkaline\nOxygen Evolution in Low-Iridium Water Electrolysis","volume":"0","author":"Wu","year":"2026","journal-title":"Energy Environ. Mater."},{"issue":"22","key":"2026093009102813300_cit18","doi-asserted-by":"publisher","first-page":"224301","DOI":"10.1103\/PhysRevB.89.224301","article-title":"Probing\nIrTe2 Crystal Symmetry by Polarized Raman Scattering","volume":"89","author":"Lazarevic\u0301","year":"2014","journal-title":"Phys. Rev. B Condens. Matter Mater. Phys."},{"issue":"1","key":"2026093009102813300_cit19","doi-asserted-by":"publisher","first-page":"7597","DOI":"10.1038\/s41467-022-35428-6","article-title":"Gradient Area-Selective\nDeposition\nfor Seamless Gap-Filling in 3D Nanostructures through Surface Chemical\nReactivity Control","volume":"13","author":"Nguyen","year":"2022","journal-title":"Nat. Commun."},{"issue":"5","key":"2026093009102813300_cit20","doi-asserted-by":"publisher","first-page":"2463","DOI":"10.1021\/acs.jpcc.1c06947","article-title":"Surface Chemistry\nduring Atomic Layer\nDeposition of Pt Studied with Vibrational Sum-Frequency Generation","volume":"126","author":"Vandalon","year":"2022","journal-title":"J. Phys. Chem. 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A"},{"issue":"10","key":"2026093009102813300_cit22","doi-asserted-by":"publisher","first-page":"4101","DOI":"10.1021\/acs.nanolett.5c00590","article-title":"Selective\nSurface Passivation for Ultrathin and Continuous Metallic Films via\nAtomic Layer Deposition","volume":"25","author":"Kim","year":"2025","journal-title":"Nano Lett."},{"issue":"3","key":"2026093009102813300_cit23","doi-asserted-by":"publisher","first-page":"212","DOI":"10.1038\/s41929-022-00753-y","article-title":"Amorphizing Noble Metal\nChalcogenide Catalysts at the Single-Layer Limit towards Hydrogen\nProduction","volume":"5","author":"He","year":"2022","journal-title":"Nat. Catal."},{"issue":"1","key":"2026093009102813300_cit24","doi-asserted-by":"publisher","first-page":"25","DOI":"10.1038\/s43246-021-00130-5","article-title":"Uniaxial Strain-Induced\nPhase Transition in the 2D Topological Semimetal IrTe2","volume":"2","author":"Nicholson","year":"2021","journal-title":"Commun. Mater."},{"issue":"7","key":"2026093009102813300_cit25","doi-asserted-by":"publisher","first-page":"074002","DOI":"10.1103\/PhysRevMaterials.5.074002","article-title":"Insensitivity of the Striped Charge\nOrders in IrTe2 to Alkali Surface Doping Implies Their\nStructural Origin","volume":"5","author":"Rumo","year":"2021","journal-title":"Phys. Rev. Mater."},{"issue":"4","key":"2026093009102813300_cit26","doi-asserted-by":"publisher","first-page":"352","DOI":"10.1038\/s41427-018-0035-4","article-title":"Ultrafast and Sensitive\nPhotodetector Based on a PtSe2\/Silicon Nanowire Array Heterojunction\nwith a Multiband Spectral Response from 200 to 1550 Nm","volume":"10","author":"Zeng","year":"2018","journal-title":"NPG Asia Mater."},{"issue":"50","key":"2026093009102813300_cit27","doi-asserted-by":"publisher","first-page":"37019","DOI":"10.1039\/D4RA06930G","article-title":"Optimizing\nthe Optoelectronic Properties\nof Broadband FeS2\/Si Photodetectors via Deposition Temperature\nTuning in Chemical Bath Deposition","volume":"14","author":"Fatehi","year":"2024","journal-title":"RSC Adv."}],"container-title":["Nano Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.nanolett.6c03219","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/nalefd\/article-pdf\/26\/38\/12941\/68507884\/acs.nanolett.6c03219.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/nalefd\/article-pdf\/26\/38\/12941\/68507884\/acs.nanolett.6c03219.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T13:31:12Z","timestamp":1790775072000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/nalefd\/article\/26\/38\/12941\/5429799\/Surface-Reaction-Controlled-Initial-Growth-of-Ir"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,15]]},"references-count":27,"journal-issue":{"issue":"38","published-online":{"date-parts":[[2026,9,15]]},"published-print":{"date-parts":[[2026,9,30]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.nanolett.6c03219","relation":{},"ISSN":["1530-6984","1530-6992"],"issn-type":[{"value":"1530-6984","type":"print"},{"value":"1530-6992","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,15]]}}}