{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,9]],"date-time":"2026-09-09T17:07:32Z","timestamp":1788973652203,"version":"build-2803163510"},"reference-count":39,"publisher":"American Chemical Society (ACS)","issue":"35","license":[{"start":{"date-parts":[[2026,8,27]],"date-time":"2026-08-27T00:00:00Z","timestamp":1787788800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,27]],"date-time":"2026-08-27T00:00:00Z","timestamp":1787788800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,27]],"date-time":"2026-08-27T00:00:00Z","timestamp":1787788800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2025M773410"],"award-info":[{"award-number":["2025M773410"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004731","name":"Natural Science Foundation of Zhejiang Province","doi-asserted-by":"publisher","award":["LQ23F040005"],"award-info":[{"award-number":["LQ23F040005"]}],"id":[{"id":"10.13039\/501100004731","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004731","name":"Natural Science Foundation of Zhejiang Province","doi-asserted-by":"publisher","award":["LQN26F040002"],"award-info":[{"award-number":["LQN26F040002"]}],"id":[{"id":"10.13039\/501100004731","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Ningbo Yongjiang Talent Introduction Programme","award":["2021A-046-C"],"award-info":[{"award-number":["2021A-046-C"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China (NSFC)","doi-asserted-by":"crossref","award":["62304227"],"award-info":[{"award-number":["62304227"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,9]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Gallium oxide (Ga2O3) is an emerging ultrawide bandgap semiconductor for high-power electronics and solar-blind optoelectronics. Here we demonstrate an atomic-scale strain relaxation method to achieve a complete \u03b1-to-\u03b2 Ga2O3 phase transition within the initial nucleation stage, enabling a heteroepitaxial growth regime of single-crystalline \u03b2-Ga2O3 (010) films. An Ar+ bombardment strategy is used to create periodic strain relaxation sites that relieve the compressive strain in the metastable \u03b1-Ga2O3 interlayer and facilitate the phase transition, as revealed by a combination of X-ray diffraction, atomic-force microscopy, atomic-resolution scanning transmission electron microscopy, and geometric phase analysis. The heteroepitaxial Sn-doped \u03b2-Ga2O3 (010) films with distinct donor activation behavior are established on m-plane sapphire, and a lateral Schottky barrier diode with a high reverse breakdown voltage of 1590 V is achieved. This study provides critical insights into atom-scale strain engineering and confined epitaxial growth for developing high-quality \u03b2-Ga2O3 films on cost-effective substrates for advanced electronic devices.<\/jats:p>","DOI":"10.1021\/acs.nanolett.6c03428","type":"journal-article","created":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T20:18:24Z","timestamp":1788293904000},"page":"11937-11944","source":"Crossref","is-referenced-by-count":0,"title":["Atomic-Scale\nStrain Relaxation via Ar-Bombarded Surface\nModification for Enabling Single-Crystalline \u03b2-Ga2O3 (010) Heteroepitaxy"],"prefix":"10.1021","volume":"26","author":[{"given":"Songhao","family":"Wu","sequence":"first","affiliation":[{"name":"Yongjiang Laboratory , ,","place":["Ningbo, China, 315201"]},{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , ,","place":["Ningbo, China, 315201"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kaisen","family":"Liu","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , ,","place":["Ningbo, China, 315201"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kaikai","family":"Fan","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , ,","place":["Ningbo, China, 315201"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Siwei","family":"Wang","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yan","family":"Tan","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , ,","place":["Ningbo, China, 315201"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Li","family":"Chen","sequence":"additional","affiliation":[{"name":"Yongjiang Laboratory , ,","place":["Ningbo, China, 315201"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1767-1316","authenticated-orcid":true,"given":"Dongyang","family":"Han","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , ,","place":["Ningbo, China, 315201"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jie","family":"Jian","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jichun","family":"Ye","sequence":"additional","affiliation":[{"name":"Yongjiang Laboratory , ,","place":["Ningbo, China, 315201"]},{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , ,","place":["Ningbo, China, 315201"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0223-1924","authenticated-orcid":true,"given":"Wenrui","family":"Zhang","sequence":"additional","affiliation":[{"name":"Yongjiang Laboratory , ,","place":["Ningbo, China, 315201"]},{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , ,","place":["Ningbo, China, 315201"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,27]]},"reference":[{"key":"2026090911334250300_cit1","doi-asserted-by":"publisher","first-page":"697","DOI":"10.1016\/j.fmre.2021.11.002","article-title":"Toward emerging gallium\noxide semiconductors: A roadmap","volume":"1","author":"Yuan","year":"2021","journal-title":"Fundam. Res."},{"key":"2026090911334250300_cit2","doi-asserted-by":"publisher","DOI":"10.1063\/1.5006941","article-title":"A review of Ga2O3 materials,\nprocessing, and devices","volume":"5","author":"Pearton","year":"2018","journal-title":"Appl.\nPhys. Rev."},{"key":"2026090911334250300_cit3","doi-asserted-by":"publisher","first-page":"537","DOI":"10.1021\/acs.nanolett.4c05446","article-title":"Ultrawide Bandgap Diamond\/epsilon-Ga2O3 Heterojunction pn Diodes with Breakdown Voltages\nover 3 kV","volume":"25","author":"Zhang","year":"2025","journal-title":"Nano Lett."},{"key":"2026090911334250300_cit4","doi-asserted-by":"publisher","first-page":"13769","DOI":"10.1021\/acs.nanolett.4c04030","article-title":"Ultrathin Ga2O3 photodetector with fast response\nand trajectory tracking\ncapability fabricated by liquid metal oxidation","volume":"24","author":"Zhong","year":"2024","journal-title":"Nano Lett."},{"key":"2026090911334250300_cit5","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtphys.2023.101280","article-title":"Photocarrier transport reconstruction and dramatical\nperformance enhancement in ultrawide-bandgap \u03b5-Ga2O3 photodetectors via surface defect passivation","volume":"38","author":"Zhang","year":"2023","journal-title":"Mater. Today Phys."},{"key":"2026090911334250300_cit6","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/19\/34\/346211","article-title":"Structures and energetics of Ga2O3 polymorphs","volume":"19","author":"Yoshioka","year":"2007","journal-title":"J. Phys. Condens.\nMater."},{"key":"2026090911334250300_cit7","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202300844","article-title":"Recent advanced ultra-wide\nbandgap \u03b2-Ga2O3 material\nand device technologies","volume":"11","author":"Sun","year":"2025","journal-title":"Adv. Electron. Mater."},{"key":"2026090911334250300_cit8","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adw6167","article-title":"Heterogeneous\nintegration of ultrawide bandgap semiconductors\nfor radio frequency power devices","volume":"11","author":"Zhou","year":"2025","journal-title":"Sci. Adv."},{"key":"2026090911334250300_cit9","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2026.187699","article-title":"The Growth and Characterization\nof 6-in. (100) \u03b2-Ga2O3 Single Crystals Grown by a Casting Method","volume":"1063","author":"Gao","year":"2026","journal-title":"J. Alloy. Compd."},{"key":"2026090911334250300_cit10","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.202400444","article-title":"Growth of 6 in. diameter \u03b2-Ga2O3 crystal by the vertical\nBridgman method","volume":"262","author":"Igarashi","year":"2025","journal-title":"Phys. Status Solidi B"},{"key":"2026090911334250300_cit11","doi-asserted-by":"publisher","DOI":"10.1063\/1.5054573","article-title":"Three-dimensional anisotropic\nthermal conductivity tensor of single crystalline \u03b2-Ga2O3","volume":"113","author":"Jiang","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"2026090911334250300_cit12","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2021.105732","article-title":"Rapid homoepitaxial\ngrowth of (010) \u03b2-Ga2O3 thin films via mist chemical vapor deposition","volume":"128","author":"Nishinaka","year":"2021","journal-title":"Mater. Sci. Semicond. Process"},{"key":"2026090911334250300_cit13","doi-asserted-by":"publisher","DOI":"10.1063\/1.4991363","article-title":"Highly conductive homoepitaxial\nSi-doped Ga2O3 films on (010) \u03b2-Ga2O3 by pulsed laser deposition","volume":"111","author":"Leedy","year":"2017","journal-title":"Appl.\nPhys. Lett."},{"key":"2026090911334250300_cit14","doi-asserted-by":"publisher","DOI":"10.1063\/5.0137666","article-title":"Enhancing\nthe electron mobility in Si-doped (010) \u03b2-Ga2O3 films with low-temperature\nbuffer layers","volume":"11","author":"Bhattacharyya","year":"2023","journal-title":"APL Mater."},{"key":"2026090911334250300_cit15","doi-asserted-by":"publisher","DOI":"10.1063\/5.0230413","article-title":"200 cm2\/Vs electron mobility and controlled low 1015 cm\u20133 Si doping in (010) \u03b2-Ga2O3 epitaxial drift layers","volume":"125","author":"Peterson","year":"2024","journal-title":"Appl. Phys. Lett."},{"key":"2026090911334250300_cit16","doi-asserted-by":"publisher","first-page":"3507","DOI":"10.1109\/TED.2018.2841904","article-title":"A Comparative Study\non the Electrical Properties of Vertical (\u2212201) and (010) \u03b2-Ga2O3 Schottky Barrier Diodes\non EFG Single-Crystal Substrates","volume":"65","author":"Fu","year":"2018","journal-title":"IEEE Trans.\nElectron Devices"},{"key":"2026090911334250300_cit17","doi-asserted-by":"publisher","first-page":"340","DOI":"10.1021\/acs.cgd.4c01343","article-title":"Dopant Segregation\nat the Solid\u2013Liquid Interface in the Single Crystal Growth\nof \u03b2-Ga2O3 by an Edge-Defined\nFilm-Fed Growth Method","volume":"25","author":"Zhang","year":"2025","journal-title":"Cryst. Growth Des."},{"key":"2026090911334250300_cit18","doi-asserted-by":"publisher","DOI":"10.1063\/5.0065087","article-title":"Metalorganic chemical\nvapor deposition of \u03b1-Ga2O3 and \u03b1-(AlxGa1\u2013x)2O3 thin films\non m-plane sapphire substrates","volume":"9","author":"Bhuiyan","year":"2021","journal-title":"APL Mater."},{"key":"2026090911334250300_cit19","doi-asserted-by":"publisher","DOI":"10.1063\/5.0191831","article-title":"Unraveling evolution of microstructural\ndomains in the heteroepitaxy\nof \u03b2-Ga2O3 on sapphire","volume":"124","author":"Cui","year":"2024","journal-title":"Appl. Phys. Lett."},{"key":"2026090911334250300_cit20","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.abd5891","article-title":"Crystal orientation dictated epitaxy of ultrawide-bandgap\n5.4-to 8.6-eV \u03b1-(AlGa)2O3 on m-plane sapphire","volume":"7","author":"Jinno","year":"2021","journal-title":"Sci. Adv."},{"key":"2026090911334250300_cit21","doi-asserted-by":"publisher","DOI":"10.1063\/5.0078752","article-title":"Non-equilibrium epitaxy\nof metastable polymorphs of ultrawide-bandgap gallium oxide","volume":"120","author":"Zhang","year":"2022","journal-title":"Appl. Phys. Lett."},{"key":"2026090911334250300_cit22","doi-asserted-by":"publisher","DOI":"10.1063\/5.0149797","article-title":"PLD of \u03b1-Ga2O3 on m-plane Al2O3: Growth regime, growth\nprocess, and structural properties","volume":"11","author":"Petersen","year":"2023","journal-title":"APL Mater."},{"key":"2026090911334250300_cit23","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2023.170671","article-title":"(AlxGa1\u2013x)2O3-based materials: Growth,\nproperties, and device applications","volume":"960","author":"Li","year":"2023","journal-title":"J. Alloys\nCompd."},{"key":"2026090911334250300_cit24","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtphys.2026.102010","article-title":"Designing a Hybrid \u03b1\/\u03b2-Ga2O3 Polymorph Heterostructure\nfrom Strain-Relaxed Phase Transition for\nHigh-Voltage Power Diodes","volume":"61","author":"Liu","year":"2026","journal-title":"Mater. Today Phys."},{"key":"2026090911334250300_cit25","doi-asserted-by":"publisher","first-page":"1272","DOI":"10.1107\/S0021889811038970","article-title":"VESTA 3 for three-dimensional\nvisualization of crystal, volumetric\nand morphology data","volume":"44","author":"Momma","year":"2011","journal-title":"J. Appl. Crystallogr."},{"key":"2026090911334250300_cit26","doi-asserted-by":"publisher","first-page":"258","DOI":"10.1016\/j.apsusc.2014.11.074","article-title":"Effect of growth pressure on the\ncharacteristics of \u03b2-Ga2O3 films grown on GaAs (100) substrates\nby MOCVD method","volume":"325","author":"Chen","year":"2015","journal-title":"Appl. Surf. Sci."},{"key":"2026090911334250300_cit27","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.8.011101","article-title":"Epitaxial\nstabilization of pseudomorphic \u03b1-Ga2O3 on sapphire (0001)","volume":"8","author":"Schewski","year":"2015","journal-title":"Appl. Phys.\nExpress"},{"key":"2026090911334250300_cit28","doi-asserted-by":"publisher","first-page":"23280","DOI":"10.1021\/acs.jpcc.0c08183","article-title":"Reaction Pathways for \u03b1-Ga2O3 and \u03b2-Ga2O3 Phase Transition under\nPressure up to 40 GPa: A First-Principles\nStudy","volume":"124","author":"Song","year":"2020","journal-title":"J. Phys. Chem. C"},{"key":"2026090911334250300_cit29","doi-asserted-by":"publisher","first-page":"3648","DOI":"10.1021\/acs.chemmater.1c04245","article-title":"Two-dimensional\nferroelectric Ga2O3 bilayers with unusual strain-engineered\ninterlayer interactions","volume":"34","author":"Zhao","year":"2022","journal-title":"Chem. Mater."},{"key":"2026090911334250300_cit30","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.97.115163","article-title":"Origin of photoluminescence in \u03b2-Ga2O3","volume":"97","author":"Ho","year":"2018","journal-title":"Phys. Rev. B"},{"key":"2026090911334250300_cit31","doi-asserted-by":"publisher","first-page":"1045","DOI":"10.3390\/cryst13071045","article-title":"Effects of Annealing on Surface Residual\nImpurities and Intrinsic Defects of \u03b2-Ga2O3","volume":"13","author":"Wu","year":"2023","journal-title":"Crystals"},{"key":"2026090911334250300_cit32","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.15.054010","article-title":"Compensation of\nShallow Donors by Gallium Vacancies\nin Monoclinic \u03b2-Ga2O3","volume":"15","author":"Swain","year":"2021","journal-title":"Phys. Rev. Appl."},{"key":"2026090911334250300_cit33","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevResearch.3.023154","article-title":"Ultrafast\ndynamics of gallium vacancy charge states in \u03b2-Ga2O3","volume":"3","author":"Singh","year":"2021","journal-title":"Phys. Rev. Research"},{"key":"2026090911334250300_cit34","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtphys.2024.101555","article-title":"Transport and electronic\nstructure properties of MBE grown Sn doped\nGa2O3 homo-epitaxial films","volume":"48","author":"Kuang","year":"2024","journal-title":"Mater. Today Phys."},{"key":"2026090911334250300_cit35","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2023.107858","article-title":"A benchmark study on\ntetravalent\nion doping in heteroepitaxial \u03b2-Ga2O3 films fabricated by pulsed laser deposition","volume":"168","author":"Liu","year":"2023","journal-title":"Mater. Sci. Semicon. Proc."},{"key":"2026090911334250300_cit36","doi-asserted-by":"publisher","first-page":"1564","DOI":"10.1109\/LED.2018.2868444","article-title":"Field-Plated Lateral \u03b2-Ga2O3 Schottky Barrier Diode\nWith High Reverse Blocking Voltage\nof More Than 3 kV and High DC Power Figure-of-Merit of 500 MW\/cm2","volume":"39","author":"Hu","year":"2018","journal-title":"IEEE Electron Device Lett."},{"key":"2026090911334250300_cit37","doi-asserted-by":"publisher","first-page":"684","DOI":"10.1109\/LED.2026.3667108","article-title":"2kV\/16A \u03b2-Ga2O3 Schottky Barrier Diodes\nwith Surface Killer\nDefects Reduced by Ar Plasma Treatment","volume":"47","author":"Liu","year":"2026","journal-title":"IEEE\nElectron Device Lett."},{"key":"2026090911334250300_cit38","doi-asserted-by":"publisher","first-page":"2037","DOI":"10.1109\/LED.2022.3216302","article-title":"\u03b2-Ga2O3 lateral high-permittivity dielectric\nsuperjunction Schottky barrier diode with 1.34 GW\/cm2 power\nfigure of merit","volume":"43","author":"Roy","year":"2022","journal-title":"IEEE Electron Device Lett."},{"key":"2026090911334250300_cit39","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/ac855c","article-title":"A review of gallium\noxide-based power Schottky barrier diodes","volume":"55","author":"Ji","year":"2022","journal-title":"J.\nPhys. D Appl. Phys."}],"container-title":["Nano Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.nanolett.6c03428","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/nalefd\/article-pdf\/26\/35\/11937\/67514870\/acs.nanolett.6c03428.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/nalefd\/article-pdf\/26\/35\/11937\/67514870\/acs.nanolett.6c03428.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,9]],"date-time":"2026-09-09T16:08:39Z","timestamp":1788970119000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/nalefd\/article\/26\/35\/11937\/5339666\/Atomic-Scale-Strain-Relaxation-via-Ar-Bombarded"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,27]]},"references-count":39,"journal-issue":{"issue":"35","published-online":{"date-parts":[[2026,8,27]]},"published-print":{"date-parts":[[2026,9,9]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.nanolett.6c03428","relation":{},"ISSN":["1530-6984","1530-6992"],"issn-type":[{"value":"1530-6984","type":"print"},{"value":"1530-6992","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,27]]}}}