{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T11:40:52Z","timestamp":1792755652038,"version":"4.5.0"},"reference-count":46,"publisher":"American Chemical Society (ACS)","issue":"3","license":[{"start":{"date-parts":[[2026,1,15]],"date-time":"2026-01-15T00:00:00Z","timestamp":1768435200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,1,15]],"date-time":"2026-01-15T00:00:00Z","timestamp":1768435200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,1,15]],"date-time":"2026-01-15T00:00:00Z","timestamp":1768435200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/100000078","name":"National Science Foundation","doi-asserted-by":"publisher","award":["DMR-1945351"],"award-info":[{"award-number":["DMR-1945351"]}],"id":[{"id":"10.13039\/100000078","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000078","name":"National Science Foundation","doi-asserted-by":"publisher","award":["DMR-2324033"],"award-info":[{"award-number":["DMR-2324033"]}],"id":[{"id":"10.13039\/100000078","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000078","name":"National Science Foundation","doi-asserted-by":"publisher","award":["DMR-2414726"],"award-info":[{"award-number":["DMR-2414726"]}],"id":[{"id":"10.13039\/100000078","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000928","name":"Welch Foundation","doi-asserted-by":"publisher","award":["AT-2264-20250403"],"award-info":[{"award-number":["AT-2264-20250403"]}],"id":[{"id":"10.13039\/100000928","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100006234","name":"U.S. Department of Energy","doi-asserted-by":"publisher","award":["DE-NA-0003525"],"award-info":[{"award-number":["DE-NA-0003525"]}],"id":[{"id":"10.13039\/100006234","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100014440","name":"Ministerio de Ciencia, Innovaci??n y Universidades","doi-asserted-by":"publisher","award":["CEX2021-001214-S"],"award-info":[{"award-number":["CEX2021-001214-S"]}],"id":[{"id":"10.13039\/100014440","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,1,28]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Nanopatterned semiconductor interfaces offer a versatile platform for creating quantum metamaterials and exploring novel electronic phenomena. In this study, we illustrate this concept using artificial graphene\u2500a metamaterial featuring distinctive properties including Dirac and saddle points. We demonstrate that introducing additional nanopatterning can open a Dirac band gap, giving rise to what we term artificial hexagonal boron nitride (AhBN). The calculated valley Chern number of AhBN indicates the presence of topological valley Hall states confined to Dirac-gap domain walls. A key question is whether these one-dimensional edge states are topologically protected against disorder, given their vulnerability to Anderson localization. To this end, we perform band structure and electronic transport simulations under experimentally relevant disorder, including charge puddles and geometric imperfections. Our results reveal the resilience of the domain wall states against typical experimental disorder, particularly while the AhBN band gap remains open. The localization length along the domain wall can reach several microns\u2500several times longer than the bulk electron mean free path\u2500even though the number of bulk transport channels is greater. To enhance the effectiveness of the low-dissipation domain wall channel, we propose ribbon geometries with a large length-to-width ratio. These findings underscore both the potential and challenges of AhBN for low-energy, power-efficient microelectronic applications.<\/jats:p>","DOI":"10.1021\/acsami.5c19865","type":"journal-article","created":{"date-parts":[[2026,1,15]],"date-time":"2026-01-15T09:50:26Z","timestamp":1768470626000},"page":"6111-6121","source":"Crossref","is-referenced-by-count":1,"title":["Semiconductor Meta-Graphene\nand Valleytronics"],"prefix":"10.1021","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-5143-1369","authenticated-orcid":true,"given":"Praveen","family":"Pai","sequence":"first","affiliation":[{"name":"University of Texas at Dallas , , , ,","place":["Richardson, Texas, United States, 75080"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2307-497X","authenticated-orcid":true,"given":"Aron W.","family":"Cummings","sequence":"additional","affiliation":[{"name":"Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST , Campus UAB , , ,","place":["Bellaterra, Barcelona, Spain, 08193"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4362-7300","authenticated-orcid":true,"given":"Alexander","family":"Cerjan","sequence":"additional","affiliation":[{"name":"Sandia National Laboratories , , , ,","place":["Albuquerque, New Mexico, United States, 87185"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5629-5296","authenticated-orcid":true,"given":"Wei","family":"Pan","sequence":"additional","affiliation":[{"name":"Sandia National Laboratories , , ,","place":["Livermore, California, United States, 94551"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fan","family":"Zhang","sequence":"additional","affiliation":[{"name":"University of Texas at Dallas , , , ,","place":["Richardson, Texas, United States, 75080"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Catalin D.","family":"Spataru","sequence":"additional","affiliation":[{"name":"Sandia National Laboratories , , ,","place":["Livermore, California, United States, 94551"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,1,15]]},"reference":[{"key":"2026102307070250400_cit1","doi-asserted-by":"publisher","first-page":"3045","DOI":"10.1103\/RevModPhys.82.3045","article-title":"Colloquium: Topological Insulators","volume":"82","author":"Hasan","year":"2010","journal-title":"Rev. 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U.S.A."},{"key":"2026102307070250400_cit5","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.100.036804","article-title":"Topological Confinement in Bilayer\nGraphene","volume":"100","author":"Martin","year":"2008","journal-title":"Phys. Rev. Lett."},{"key":"2026102307070250400_cit6","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.106.156801","article-title":"Spontaneous\nQuantum Hall States in Chirally Stacked Few-Layer Graphene Systems","volume":"106","author":"Zhang","year":"2011","journal-title":"Phys. Rev. Lett."},{"key":"2026102307070250400_cit7","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.102.096801","article-title":"Edge States\nin Graphene: From Gapped\nFlat-Band to Gapless Chiral Modes","volume":"102","author":"Yao","year":"2009","journal-title":"Phys. Rev.\nLett."},{"key":"2026102307070250400_cit8","doi-asserted-by":"publisher","first-page":"3453","DOI":"10.1021\/nl201941f","article-title":"Electronic\nHighways in Bilayer Graphene","volume":"11","author":"Qiao","year":"2011","journal-title":"Nano Lett."},{"key":"2026102307070250400_cit9","doi-asserted-by":"publisher","first-page":"11256","DOI":"10.1073\/pnas.1309394110","article-title":"Strain Solitons\nand Topological Defects in Bilayer Graphene","volume":"110","author":"Alden","year":"2013","journal-title":"Proc. Natl. Acad. Sci. 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