{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,20]],"date-time":"2026-05-20T09:09:57Z","timestamp":1779268197397,"version":"3.51.4"},"reference-count":55,"publisher":"American Chemical Society (ACS)","issue":"19","license":[{"start":{"date-parts":[[2026,5,11]],"date-time":"2026-05-11T00:00:00Z","timestamp":1778457600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,5,11]],"date-time":"2026-05-11T00:00:00Z","timestamp":1778457600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,5,11]],"date-time":"2026-05-11T00:00:00Z","timestamp":1778457600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["ACS Appl. Mater. Interfaces"],"published-print":{"date-parts":[[2026,5,20]]},"DOI":"10.1021\/acsami.5c25321","type":"journal-article","created":{"date-parts":[[2026,5,11]],"date-time":"2026-05-11T15:11:56Z","timestamp":1778512316000},"page":"27705-27711","source":"Crossref","is-referenced-by-count":0,"title":["Wake-Up-Free Complementary Metal\u2013Oxide\u2013Semiconductor-Compatible Multiferroic Heterostructures for Application in Magnetoelectric Spin\u2013Orbit Devices"],"prefix":"10.1021","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9750-1861","authenticated-orcid":true,"given":"Johannes","family":"Hertel","sequence":"first","affiliation":[{"name":"Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems, An der Bartlake 5, 01109 Dresden, Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7002-3967","authenticated-orcid":true,"given":"Christoph Andreas","family":"Durner","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems, An der Bartlake 5, 01109 Dresden, Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tatiana","family":"Gurieva","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems, An der Bartlake 5, 01109 Dresden, Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Benjamin","family":"Lilienthal-Uhlig","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems, An der Bartlake 5, 01109 Dresden, Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1739-2747","authenticated-orcid":true,"given":"Maximilian","family":"Lederer","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems, An der Bartlake 5, 01109 Dresden, Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"316","published-online":{"date-parts":[[2026,5,11]]},"reference":[{"key":"ref1\/cit1","doi-asserted-by":"publisher","unstructured":"Vaz, D.; Lin, C.; Plombon, J.; Choi, W.; Groen, I.; Arango, I.; Pham, V.; Nikonov, D.; Li, H.; Debashis, P.; Clendenning, S.; Gosavi, T.; Garcia, V.; Fusil, S.; Bibes, M.; Huang, Y.; Prasad, B.; Ramesh, R.; Casanova, F.; Young, I. Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device.\n                      Proceedings of the 2021 IEEE International Electron Devices Meeting (IEDM 2021)\n                      ; San Francisco, CA, Dec 11\u201316, 2021; pp 32.4.1\u201332.4.4,10.1109\/IEDM19574.2021.9720677.","DOI":"10.1109\/IEDM19574.2021.9720677"},{"key":"ref2\/cit2","doi-asserted-by":"publisher","DOI":"10.1038\/s41567-018-0101-4"},{"key":"ref3\/cit3","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-018-0770-2"},{"key":"ref4\/cit4","unstructured":"Institute\nof Electrical and\nElectronics Engineers (IEEE). Beyond CMOS.\n                      International Roadmap for Devices\nand Systems (IRDS)\n                      ; IEEE: New York, 2018; pp 1\u2013106."},{"key":"ref5\/cit5","unstructured":"Institute of Electrical and\nElectronics Engineers (IEEE). Beyond CMOS and Emerging Materials Integration.\n                      International Roadmap for Devices and Systems (IRDS)\n                      ; IEEE: New York, 2023; pp 1\u2013131."},{"key":"ref6\/cit6","doi-asserted-by":"publisher","DOI":"10.1109\/JXCDC.2023.3322292"},{"key":"ref7\/cit7","doi-asserted-by":"publisher","DOI":"10.1098\/rspa.2020.0942"},{"key":"ref8\/cit8","doi-asserted-by":"publisher","DOI":"10.1038\/s41535-018-0092-5"},{"key":"ref9\/cit9","doi-asserted-by":"publisher","DOI":"10.1021\/jp000114x"},{"key":"ref10\/cit10","doi-asserted-by":"publisher","DOI":"10.1039\/c3tc31428f"},{"key":"ref11\/cit11","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201502824"},{"key":"ref12\/cit12","doi-asserted-by":"publisher","DOI":"10.1063\/1.4966121"},{"key":"ref13\/cit13","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.9b07973"},{"key":"ref14\/cit14","doi-asserted-by":"publisher","DOI":"10.1063\/5.0054593"},{"key":"ref15\/cit15","doi-asserted-by":"publisher","DOI":"10.1088\/1674-1056\/ac9a3b"},{"key":"ref16\/cit16","doi-asserted-by":"publisher","DOI":"10.1039\/D3MH01966G"},{"key":"ref17\/cit17","doi-asserted-by":"publisher","DOI":"10.1557\/mrs.2013.282"},{"key":"ref18\/cit18","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.98.144432"},{"key":"ref19\/cit19","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.23.014040"},{"key":"ref20\/cit20","doi-asserted-by":"publisher","DOI":"10.1063\/1.3634052"},{"key":"ref21\/cit21","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201404531"},{"key":"ref22\/cit22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2283465"},{"key":"ref23\/cit23","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-2208-x"},{"key":"ref24\/cit24","doi-asserted-by":"publisher","DOI":"10.1063\/1.5052012"},{"key":"ref25\/cit25","doi-asserted-by":"publisher","DOI":"10.1063\/1.4916707"},{"key":"ref26\/cit26","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.4c15934"},{"key":"ref27\/cit27","doi-asserted-by":"publisher","DOI":"10.1116\/1.578476"},{"key":"ref28\/cit28","doi-asserted-by":"publisher","DOI":"10.1063\/1.4986147"},{"key":"ref29\/cit29","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-018-07724-7"},{"key":"ref30\/cit30","doi-asserted-by":"publisher","DOI":"10.1063\/1.4941311"},{"key":"ref31\/cit31","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.2c22205"},{"key":"ref32\/cit32","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201900840"},{"key":"ref33\/cit33","doi-asserted-by":"publisher","DOI":"10.1557\/mrc.2018.175"},{"key":"ref34\/cit34","doi-asserted-by":"publisher","unstructured":"Lehninger, D.; S\u00fcnb\u00fcl, A.; Olivo, R.; K\u00e4mpfe, T.; Seidel, K.; Lederer, M. Ferroelectric HfO\n                      2\n                      \/ZrO\n                      2\n                      Superlattices with Improved Leakage at Bias and Temperature Stress.\n                      Proceedings of the IEEE International Memory Workshop (IMW)\n                      ; Monterey, CA, May 21\u201324, 2023;10.1109\/IMW56887.2023.10145927.","DOI":"10.1109\/IMW56887.2023.10145927"},{"key":"ref35\/cit35","doi-asserted-by":"publisher","DOI":"10.1063\/1.5031446"},{"key":"ref36\/cit36","doi-asserted-by":"publisher","DOI":"10.1515\/psr-2019-0072"},{"key":"ref37\/cit37","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.12.024044"},{"key":"ref38\/cit38","doi-asserted-by":"publisher","DOI":"10.1038\/s41524-021-00679-2"},{"key":"ref39\/cit39","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.1c15082"},{"key":"ref40\/cit40","doi-asserted-by":"publisher","DOI":"10.1063\/1.5121024"},{"key":"ref41\/cit41","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202100086"},{"key":"ref42\/cit42","unstructured":"Lederer, M. Material development of doped hafnium oxide for non-volatile ferroelectric memory application. Dissertation, Technische Universit\u00e4t Dresden, Dresden, Germany, June 16, 2022."},{"key":"ref43\/cit43","unstructured":"International\nCentre for Diffraction Data (ICDD), PDF Card 00-004-0802: platinum\n(Pt), cubic,\n                      Fm\n                      3\u0305\n                      m\n                      (No. 225).\nPDF-4+ Database (Release 2023), 2023; https:\/\/www.icdd.com,\n                      a\n                      = 3.924 \u00c5 at\n299 K; CAS: 7440-06-4. Primary reference: Swanson, H. E.; Tatge, E.\n                      National Bureau of Standards Circular 539\n                      1953; Vol. I, p 31."},{"key":"ref44\/cit44","doi-asserted-by":"publisher","DOI":"10.1063\/1.1702216"},{"key":"ref45\/cit45","doi-asserted-by":"publisher","DOI":"10.1016\/0304-8853(83)90097-5"},{"key":"ref46\/cit46","doi-asserted-by":"publisher","DOI":"10.1063\/1.2830097"},{"key":"ref47\/cit47","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmmm.2013.07.003"},{"key":"ref48\/cit48","doi-asserted-by":"publisher","DOI":"10.1063\/1.4867748"},{"key":"ref49\/cit49","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfcoat.2016.02.053"},{"key":"ref50\/cit50","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmmm.2018.09.120"},{"key":"ref51\/cit51","doi-asserted-by":"publisher","DOI":"10.1109\/LMAG.2011.2174032"},{"key":"ref52\/cit52","doi-asserted-by":"publisher","DOI":"10.1021\/acsomega.2c06237"},{"key":"ref53\/cit53","unstructured":"Gepr\u00e4gs, S. Magnetoelectric Interactions in Multiferroic Thin Films and Composites. Dissertation, Technische Universit\u00e4t M\u00fcnchen, Munich, Germany, 2011."},{"key":"ref54\/cit54","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-0432-x"},{"key":"ref55\/cit55","doi-asserted-by":"publisher","DOI":"10.1063\/5.0050985"}],"container-title":["ACS Applied Materials & Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.5c25321","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.5c25321","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,5,20]],"date-time":"2026-05-20T08:41:21Z","timestamp":1779266481000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/doi\/10.1021\/acsami.5c25321"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,5,11]]},"references-count":55,"journal-issue":{"issue":"19","published-print":{"date-parts":[[2026,5,20]]}},"alternative-id":["10.1021\/acsami.5c25321"],"URL":"https:\/\/doi.org\/10.1021\/acsami.5c25321","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,5,11]]}}}