{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T09:00:33Z","timestamp":1790240433816,"version":"4.1.0"},"reference-count":147,"publisher":"American Chemical Society (ACS)","issue":"36","license":[{"start":{"date-parts":[[2026,9,7]],"date-time":"2026-09-07T00:00:00Z","timestamp":1788739200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,7]],"date-time":"2026-09-07T00:00:00Z","timestamp":1788739200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,7]],"date-time":"2026-09-07T00:00:00Z","timestamp":1788739200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2023YFC3007800"],"award-info":[{"award-number":["2023YFC3007800"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62275202"],"award-info":[{"award-number":["62275202"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,16]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Black Si (b-Si) synthesized via femtosecond (fs) laser processing has emerged as a pivotal candidate material for next-generation infrared (IR) photodetectors. Its unique hierarchical micro\/nanostructures, in synergy with supersaturated impurity doping, enable dual core functionalities\u2014broadband light trapping and sub-band gap absorption\u2014which collectively extend the spectral response of Si-based devices from visible to near-infrared. Endowed with inherent advantages including complementary metal-oxide-semiconductor (CMOS) process compatibility, low-cost scalable fabrication, and industrial adaptability, b-Si provides a viable technical route to address the intrinsic limitations of traditional III-V and II-VI semiconductor materials, such as lattice mismatch-induced epitaxial defects, complex growth processes, and prohibitive production costs. This review systematically summarizes recent advances in fs laser-processed b-Si for IR detection, with a focus on three interrelated thematic areas: (1) the fundamental physical mechanisms governing enhanced light absorption, encompassing multiple scattering effects and impurity band-mediated sub-band gap transitions; (2) key performance optimization strategies, including precision morphology engineering, gradient impurity\/co-doping protocols, and advanced post-processing techniques (e.g., heterostructure construction, plasmonic resonance enhancement, and atomic-layer-deposition-based surface passivation); (3) integration methodologies between b-Si and diverse photodetector architectures, such as planar\/vertical p-n junctions, Schottky barrier diodes, and hybrid van der Waals heterostructures. Finally, the critical challenges restricting the practical deployment of fs laser-engineered b-Si are delineated, and prospective development directions are proposed\u2014including CMOS-compatible mass fabrication, hetero-material integration for mid-wave IR extension, multispectral detection system design, and long-term stability enhancement via novel passivation strategies. This review aims to establish a comprehensive reference framework for rational design, performance optimization, and industrial translation of high-sensitivity, broadband, low-noise Si-based IR detectors.<\/jats:p>","DOI":"10.1021\/acsami.6c05804","type":"journal-article","created":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T10:18:18Z","timestamp":1788430698000},"page":"48545-48579","source":"Crossref","is-referenced-by-count":0,"title":["Infrared Photodetector Fabrication by Femtosecond Laser-Engineered Black Silicon: A Comprehensive Review"],"prefix":"10.1021","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2857-4332","authenticated-orcid":true,"given":"Xiaona","family":"Zhao","sequence":"first","affiliation":[{"name":"Wuhan University , , ,","place":["Wuhan, China, 430072"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mingxing","family":"Xu","sequence":"additional","affiliation":[{"name":"Wuhan University , , ,","place":["Wuhan, China, 430072"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yueming","family":"Hu","sequence":"additional","affiliation":[{"name":"Wuhan University , , ,","place":["Wuhan, China, 430072"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuxuan","family":"He","sequence":"additional","affiliation":[{"name":"Wuhan University , , ,","place":["Wuhan, China, 430072"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Achu","family":"Purushothaman","sequence":"additional","affiliation":[{"name":"Universit\u00e0 degli Studi di Napoli Federico II, Complesso Universitario di Monte S. Angelo , , , ,","place":["Via Cintia, Napoli, Italy, I-80126"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xuan","family":"Wang","sequence":"additional","affiliation":[{"name":"Wuhan University , , ,","place":["Wuhan, China, 430072"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1011-3215","authenticated-orcid":true,"given":"Salvatore","family":"Amoruso","sequence":"additional","affiliation":[{"name":"Universit\u00e0 degli Studi di Napoli Federico II, Complesso Universitario di Monte S. Angelo , , , ,","place":["Via Cintia, Napoli, Italy, I-80126"]},{"name":"UOS Napoli, Compl. Universitario di Monte S. Angelo , , , ,","place":["Via Cintia, Napoli, Italy, I-80126"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,7]]},"reference":[{"key":"2026092321464861200_cit1","doi-asserted-by":"publisher","DOI":"10.1016\/j.aquaculture.2025.742922","article-title":"Microplastic Pollution in Aquaculture Species: Quantification and Characterization in Tilapia and Pangas","volume":"610","author":"Manon","year":"2026","journal-title":"Aquaculture"},{"key":"2026092321464861200_cit2","doi-asserted-by":"crossref","first-page":"233","DOI":"10.1007\/978-3-031-72855-6_14","volume-title":"Computer Vision \u2013 ECCV 2024","author":"Zhang","year":"2025"},{"issue":"1","key":"2026092321464861200_cit3","doi-asserted-by":"publisher","DOI":"10.1186\/s40001-025-02278-z","article-title":"Infrared Thermography in Clinical Practice: A Literature Review","volume":"30","author":"Liu","year":"2025","journal-title":"Eur. J. Med. Res."},{"issue":"15","key":"2026092321464861200_cit4","doi-asserted-by":"publisher","DOI":"10.3390\/ma18153676","article-title":"MBE Growth of High-Quality HgCdSe for Infrared Detector Applications","volume":"18","author":"Zhang","year":"2025","journal-title":"Materials"},{"key":"2026092321464861200_cit5","doi-asserted-by":"publisher","first-page":"16.7.1","DOI":"10.1109\/IEDM19573.2019.8993432","article-title":"High-Definition Visible-SWIR InGaAs Image Sensor Using Cu-Cu Bonding of III-V to Silicon Wafer","volume-title":"2019 IEEE International Electron Devices Meeting (IEDM)","author":"Manda","year":"2019"},{"issue":"51","key":"2026092321464861200_cit6","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201801164","article-title":"Recent Progress and Future Prospects of 2D-Based Photodetectors","volume":"30","author":"Huo","year":"2018","journal-title":"Adv. Mater."},{"key":"2026092321464861200_cit7","doi-asserted-by":"publisher","DOI":"10.1038\/lsa.2015.59","article-title":"Advances in InGaAs\/InP Single-Photon Detector Systems for Quantum Communication","volume":"4","author":"Zhang","year":"2015","journal-title":"Light: Sci. Appl."},{"issue":"18","key":"2026092321464861200_cit8","doi-asserted-by":"publisher","DOI":"10.1063\/5.0117223","article-title":"PbS QDs\/Al2O3\/In0.53Ga0.47As Infrared Photodetector with Fast Response and High Sensitivity","volume":"121","author":"Chen","year":"2022","journal-title":"Appl. Phys. Lett."},{"issue":"2","key":"2026092321464861200_cit9","doi-asserted-by":"publisher","first-page":"3047","DOI":"10.1364\/OE.447091","article-title":"Near 100% External Quantum Efficiency 1550-Nm Broad Spectrum Photodetector","volume":"30","author":"Shen","year":"2022","journal-title":"Opt. Express"},{"issue":"16","key":"2026092321464861200_cit10","doi-asserted-by":"publisher","first-page":"30614","DOI":"10.1109\/JSEN.2025.3586472","article-title":"Diffraction-Grating-Free AlxIn1-xP\/InAs Quantum Well Infrared Photodetector for Mid-Wavelength Infrared Imaging","volume":"25","author":"Besikci","year":"2025","journal-title":"IEEE Sens. J."},{"issue":"9","key":"2026092321464861200_cit11","doi-asserted-by":"publisher","first-page":"7467","DOI":"10.1007\/s11468-024-02666-x","article-title":"Mode Switchable Quantum Well Infrared Detector with Rectangular Plasmonic Microcavity Structure","volume":"20","author":"Zhao","year":"2025","journal-title":"Plasmonics"},{"key":"2026092321464861200_cit12","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2024.109008","article-title":"A Nanophotonic Approach to Signal-to-Noise Ratio of Quantum Dot Infrared Photodetectors with Surface Plasmonic Excitation","volume":"221\u2013222","author":"Lee","year":"2024","journal-title":"Solid-State Electron."},{"key":"2026092321464861200_cit13","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2024.177612","article-title":"Investigation of Inter-Dot Tunnelling Effect in Hybrid Coupled QDs Heterostructures for Short-Wave Infrared Detection (SWIR) application","volume":"1010","author":"Choudhary","year":"2025","journal-title":"J. Alloys Compd."},{"issue":"5","key":"2026092321464861200_cit14","doi-asserted-by":"publisher","first-page":"2653","DOI":"10.1007\/s11468-023-02187-z","article-title":"Metal-Semiconductor-Metal Structure Enhanced Quantum Dot Infrared Photodetector for near-Infrared","volume":"19","author":"Huang","year":"2024","journal-title":"Plasmonics"},{"issue":"21","key":"2026092321464861200_cit15","doi-asserted-by":"publisher","DOI":"10.3390\/app14219841","article-title":"Recent Advances in Black Silicon Surface Modification for Enhanced Light Trapping in Photodetectors","volume":"14","author":"Alsolami","year":"2024","journal-title":"Appl. Sci."},{"issue":"13","key":"2026092321464861200_cit16","doi-asserted-by":"publisher","first-page":"1850","DOI":"10.1063\/1.1358846","article-title":"Near-Unity below-Band-Gap Absorption by Microstructured Silicon","volume":"78","author":"Wu","year":"2001","journal-title":"Appl. Phys. Lett."},{"issue":"5","key":"2026092321464861200_cit17","doi-asserted-by":"publisher","first-page":"2626","DOI":"10.1063\/1.1545159","article-title":"Infrared Absorption by Conical Silicon Microstructures Made in a Variety of Background Gases Using Femtosecond-Laser Pulses","volume":"93","author":"Younkin","year":"2003","journal-title":"J. Appl. Phys."},{"issue":"6","key":"2026092321464861200_cit18","doi-asserted-by":"publisher","first-page":"797","DOI":"10.1007\/s003390100980","article-title":"Defect Capture under Rapid Solidification of the Melt Induced by the Action of Femtosecond Laser Pulses and Formation of Periodic Surface Structures on a Semiconductor Surface","volume":"74","author":"Emel'yanov","year":"2002","journal-title":"Appl. Phys. A:Mater. Sci. Process."},{"issue":"2","key":"2026092321464861200_cit19","doi-asserted-by":"publisher","first-page":"115","DOI":"10.1088\/0960-1317\/5\/2\/015","article-title":"The Black Silicon Method: A Universal Method for Determining the Parameter Setting of a Fluorine-Based Reactive Ion Etcher in Deep Silicon Trench Etching with Profile Control","volume":"5","author":"Jansen","year":"1995","journal-title":"J. Micromech. Microeng."},{"issue":"12","key":"2026092321464861200_cit20","doi-asserted-by":"publisher","first-page":"1673","DOI":"10.1063\/1.122241","article-title":"Microstructuring of Silicon with Femtosecond Laser Pulses","volume":"73","author":"Her","year":"1998","journal-title":"Appl. Phys. Lett."},{"issue":"1","key":"2026092321464861200_cit21","doi-asserted-by":"publisher","DOI":"10.1117\/1.2896069","article-title":"Luminescence of Black Silicon","volume":"2","author":"Serpeng\u00fczel","year":"2008","journal-title":"J. Nanophotonics"},{"issue":"14","key":"2026092321464861200_cit22","doi-asserted-by":"publisher","first-page":"7769","DOI":"10.1021\/la9013009","article-title":"Simple Approach to Wafer-Scale Self-Cleaning Antireflective Silicon Surfaces","volume":"25","author":"Qi","year":"2009","journal-title":"Langmuir"},{"issue":"5","key":"2026092321464861200_cit23","doi-asserted-by":"publisher","first-page":"547","DOI":"10.1016\/j.nantod.2016.08.007","article-title":"Digital Selective Laser Methods for Nanomaterials: From Synthesis to Processing","volume":"11","author":"Hong","year":"2016","journal-title":"Nano Today"},{"issue":"28","key":"2026092321464861200_cit24","doi-asserted-by":"publisher","first-page":"3176","DOI":"10.1002\/adma.201100717","article-title":"Nanoscale Electronics: Digital Fabrication by Direct Femtosecond Laser Processing of Metal Nanoparticles","volume":"23","author":"Son","year":"2011","journal-title":"Adv. Mater."},{"issue":"34","key":"2026092321464861200_cit25","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202307586","article-title":"Laser-based Selective Material Processing for Next-generation Additive Manufacturing","volume":"36","author":"Park","year":"2024","journal-title":"Adv. Mater."},{"issue":"2","key":"2026092321464861200_cit26","doi-asserted-by":"publisher","DOI":"10.1063\/5.0133770","article-title":"Black Silicon for Near-Infrared and Ultraviolet Photodetection: A Review","volume":"11","author":"Zhao","year":"2023","journal-title":"APL Mater."},{"issue":"41","key":"2026092321464861200_cit27","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/27\/41\/412003","article-title":"Nanostructured Silicon via Metal Assisted Catalyzed Etch (MACE): Chemistry Fundamentals and Pattern Engineering","volume":"27","author":"Toor","year":"2016","journal-title":"Nanotechnology"},{"issue":"17","key":"2026092321464861200_cit28","doi-asserted-by":"publisher","first-page":"5509","DOI":"10.1016\/j.electacta.2008.03.009","article-title":"Metal-Assisted Chemical Etching of Silicon in HF\u2013H2O2","volume":"53","author":"Chartier","year":"2008","journal-title":"Electrochim. Acta"},{"issue":"10","key":"2026092321464861200_cit29","doi-asserted-by":"publisher","DOI":"10.3390\/nano9101392","article-title":"Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells","volume":"9","author":"Hsu","year":"2019","journal-title":"Nanomaterials"},{"issue":"10","key":"2026092321464861200_cit30","doi-asserted-by":"publisher","first-page":"3223","DOI":"10.1039\/C4EE01152J","article-title":"Black Silicon: Fabrication Methods, Properties and Solar Energy Applications","volume":"7","author":"Liu","year":"2014","journal-title":"Energy Environ. Sci."},{"key":"2026092321464861200_cit31","doi-asserted-by":"publisher","DOI":"10.1016\/j.optmat.2022.113111","article-title":"Broadband Light Absorption Enhancement in Nanoporous Black Silicon Synthesized by Aluminium-Catalyzed Chemical Etching","volume":"134","author":"Uddin","year":"2022","journal-title":"Opt. Mater."},{"issue":"1\u20133","key":"2026092321464861200_cit32","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.mser.2010.04.001","article-title":"Anti-Reflecting and Photonic Nanostructures","volume":"69","author":"Chattopadhyay","year":"2010","journal-title":"Mater. Sci. Eng., R"},{"issue":"2","key":"2026092321464861200_cit33","doi-asserted-by":"publisher","first-page":"190","DOI":"10.1088\/0960-1317\/14\/2\/004","article-title":"Passivation Mechanisms in Cryogenic SF6\/O2 Etching Process","volume":"14","author":"Dussart","year":"2004","journal-title":"J. Micromech. Microeng."},{"issue":"12","key":"2026092321464861200_cit34","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/47\/12\/123001","article-title":"Plasma Cryogenic Etching of Silicon: From the Early Days to Today\u2019s Advanced Technologies","volume":"47","author":"Dussart","year":"2014","journal-title":"J. Phys. D:Appl. Phys."},{"issue":"18","key":"2026092321464861200_cit35","doi-asserted-by":"publisher","first-page":"3395","DOI":"10.1088\/0022-3727\/38\/18\/012","article-title":"Silicon Columnar Microstructures Induced by an SF6\/O2 plasma","volume":"38","author":"Dussart","year":"2005","journal-title":"J. Phys. D: Appl. Phys."},{"issue":"4","key":"2026092321464861200_cit36","doi-asserted-by":"publisher","first-page":"730","DOI":"10.1016\/j.solener.2010.01.031","article-title":"Reactive Ion Etching (RIE) Technique for Application in Crystalline Silicon Solar Cells","volume":"84","author":"Yoo","year":"2010","journal-title":"Sol. Energy"},{"issue":"5\u20138","key":"2026092321464861200_cit37","doi-asserted-by":"publisher","first-page":"1128","DOI":"10.1016\/j.mee.2007.01.048","article-title":"The Passivation Layer Formation in the Cryo-Etching Plasma Process","volume":"84","author":"Dussart","year":"2007","journal-title":"Microelectron. Eng."},{"issue":"1\u20134","key":"2026092321464861200_cit38","doi-asserted-by":"publisher","first-page":"99","DOI":"10.1016\/j.solmat.2004.07.015","article-title":"Minority Carrier Lifetime in Plasma-Textured Silicon Wafers for Solar Cells","volume":"87","author":"Kumaravelu","year":"2005","journal-title":"Sol. Energy Mater. Sol. Cells"},{"issue":"19","key":"2026092321464861200_cit39","doi-asserted-by":"publisher","DOI":"10.1063\/1.4805024","article-title":"On the Optical and Morphological Properties of Microstructured Black Silicon Obtained by Cryogenic-Enhanced Plasma Reactive Ion Etching","volume":"113","author":"Nguyen","year":"2013","journal-title":"J. Appl. Phys."},{"issue":"6","key":"2026092321464861200_cit40","doi-asserted-by":"publisher","first-page":"1200","DOI":"10.1109\/16.925248","article-title":"Characterization of Random Reactive Ion Etched-Textured Silicon Solar Cells","volume":"48","author":"Zaidi","year":"2001","journal-title":"IEEE Trans. Electron Devices"},{"issue":"5","key":"2026092321464861200_cit41","doi-asserted-by":"publisher","first-page":"1857","DOI":"10.1116\/1.2333571","article-title":"Investigation of Reactive Ion Etching of Dielectrics and Si in CHF3\/O2 or CHF3\/Ar for Photovoltaic Applications","volume":"24","author":"Gatzert","year":"2006","journal-title":"J. Vac. Sci. Technol., A"},{"issue":"7","key":"2026092321464861200_cit42","doi-asserted-by":"publisher","first-page":"1574","DOI":"10.1016\/j.solener.2011.03.012","article-title":"A Novel Method to Produce Black Silicon for Solar Cells","volume":"85","author":"Xia","year":"2011","journal-title":"Sol. Energy"},{"issue":"1","key":"2026092321464861200_cit43","doi-asserted-by":"publisher","first-page":"50","DOI":"10.1088\/0022-3727\/37\/1\/009","article-title":"Implantation Dynamics of Plasma Implantation into Insulating Strips","volume":"37","author":"Tian","year":"2004","journal-title":"J. Phys. D:Appl. Phys."},{"issue":"14","key":"2026092321464861200_cit44","doi-asserted-by":"publisher","first-page":"1481","DOI":"10.1109\/LPT.2015.2425953","article-title":"Infrared Absorption of Femtosecond Laser Textured Silicon under Vacuum","volume":"27","author":"Li","year":"2015","journal-title":"IEEE Photon. Technol. Lett."},{"issue":"4","key":"2026092321464861200_cit45","doi-asserted-by":"publisher","DOI":"10.1007\/s11467-015-0491-z","article-title":"Effect of Thermal Annealing on Sub-Band-Gap Absorptance of Microstructured Silicon in Air","volume":"10","author":"Cao","year":"2015","journal-title":"Front. Phys."},{"issue":"10","key":"2026092321464861200_cit46","doi-asserted-by":"publisher","first-page":"2063","DOI":"10.1080\/09500349608232871","article-title":"On the Effective Medium Theory of Subwavelength Periodic Structures","volume":"43","author":"Lalanne","year":"1996","journal-title":"J. Mod. Opt."},{"issue":"10","key":"2026092321464861200_cit47","doi-asserted-by":"publisher","first-page":"13443","DOI":"10.1364\/OE.26.013443","article-title":"Optical Modeling of Black Silicon Using an Effective Medium\/Multi-Layer Approach","volume":"26","author":"Elsayed","year":"2018","journal-title":"Opt. Express"},{"issue":"2","key":"2026092321464861200_cit48","doi-asserted-by":"publisher","first-page":"343","DOI":"10.1364\/OL.39.000343","article-title":"Generation and Erasure of Femtosecond Laser-Induced Periodic Surface Structures on Nanoparticle-Covered Silicon by a Single Laser Pulse","volume":"39","author":"Yang","year":"2014","journal-title":"Opt. Lett."},{"issue":"12","key":"2026092321464861200_cit49","doi-asserted-by":"publisher","first-page":"2251","DOI":"10.1016\/j.solmat.2010.07.020","article-title":"Optical Properties of Silicon Light Trapping Structures for Photovoltaics","volume":"94","author":"Iyengar","year":"2010","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"2026092321464861200_cit50","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2024.161967","article-title":"Tuning Spike-like Morphologies in Silicon by Sustainable Fs-Laser Processing in Air for Enhanced Light Absorption","volume":"686","author":"Gomez-Munoz","year":"2025","journal-title":"Appl. Surf. Sci."},{"issue":"6","key":"2026092321464861200_cit51","doi-asserted-by":"publisher","DOI":"10.7498\/aps.66.067902","article-title":"Femtosecond Laser Pulse Energy Accumulation Optimization Effect on Surface Morphology of Black Silicon","volume":"66","author":"Hai-Yan","year":"2017","journal-title":"Acta Phys. Sinica"},{"issue":"5","key":"2026092321464861200_cit52","doi-asserted-by":"publisher","first-page":"612","DOI":"10.1364\/OME.3.000612","article-title":"Scaling of Black Silicon Processing Time by High Repetition Rate Femtosecond Lasers","volume":"3","author":"Nava","year":"2013","journal-title":"Opt. Mater. Express"},{"key":"2026092321464861200_cit53","doi-asserted-by":"publisher","first-page":"576","DOI":"10.1063\/1.3507149","article-title":"Study on Laser-Induced Periodic Structures and Photovoltaic Application","volume-title":"International Symposium on High Power Laser Ablation 2010","author":"Torres","year":"2010"},{"key":"2026092321464861200_cit54","doi-asserted-by":"publisher","first-page":"565","DOI":"10.1016\/j.apsusc.2016.10.162","article-title":"Femtosecond Laser Surface Structuring of Silicon with Gaussian and Optical Vortex Beams","volume":"418","author":"Nivas","year":"2017","journal-title":"Appl. Surf. Sci."},{"issue":"13","key":"2026092321464861200_cit55","doi-asserted-by":"publisher","first-page":"4702","DOI":"10.1016\/j.apsusc.2005.08.120","article-title":"Self-Organized Pattern Formation upon Femtosecond Laser Ablation by Circularly Polarized Light","volume":"252","author":"Varlamova","year":"2006","journal-title":"Appl. Surf. Sci."},{"issue":"4\u20136","key":"2026092321464861200_cit56","doi-asserted-by":"publisher","first-page":"1429","DOI":"10.1007\/s00339-004-2803-y","article-title":"Sub\u2013Damage\u2013Threshold Femtosecond Laser Ablation from Crystalline Si: Surface Nanostructures and Phase Transformation","volume":"79","author":"Costache","year":"2004","journal-title":"Appl. Phys. A"},{"issue":"8","key":"2026092321464861200_cit57","doi-asserted-by":"publisher","first-page":"626","DOI":"10.1557\/mrs2006.160","article-title":"Silicon Surface Morphologies after Femtosecond Laser Irradiation","volume":"31","author":"Tull","year":"2006","journal-title":"MRS Bull."},{"issue":"11","key":"2026092321464861200_cit58","doi-asserted-by":"publisher","first-page":"1846","DOI":"10.1364\/AO.47.001846","article-title":"Ultraviolet Femtosecond, Picosecond and Nanosecond Laser Microstructuring of Silicon: Structural and Optical Properties","volume":"47","author":"Zorba","year":"2008","journal-title":"Appl. Opt."},{"issue":"14","key":"2026092321464861200_cit59","doi-asserted-by":"publisher","first-page":"3582","DOI":"10.1021\/cm049029i","article-title":"Role of the Background Gas in the Morphology and Optical Properties of Laser-Microstructured Silicon","volume":"17","author":"Sheehy","year":"2005","journal-title":"Chem. Mater."},{"issue":"4","key":"2026092321464861200_cit60","doi-asserted-by":"publisher","first-page":"1019","DOI":"10.1007\/s00339-008-4671-3","article-title":"Femtosecond Laser Induced Nanostructure Formation: Self-Organization Control Parameters","volume":"92","author":"Reif","year":"2008","journal-title":"Appl. Phys. A"},{"key":"2026092321464861200_cit61","doi-asserted-by":"publisher","first-page":"905","DOI":"10.1016\/j.apsusc.2014.06.105","article-title":"Progressive Evolution of Silicon Surface Microstructures via Femtosecond Laser Irradiation in Ambient Air","volume":"313","author":"Ma","year":"2014","journal-title":"Appl. Surf. Sci."},{"key":"2026092321464861200_cit62","doi-asserted-by":"publisher","first-page":"380","DOI":"10.1016\/j.optmat.2018.02.051","article-title":"Deposition and Melting Behaviors for Formation of Micro\/Nano Structures from Nanostructures with Femtosecond Pulses","volume":"78","author":"Chen","year":"2018","journal-title":"Opt. Mater."},{"issue":"5","key":"2026092321464861200_cit63","doi-asserted-by":"publisher","first-page":"635","DOI":"10.1364\/AO.51.000635","article-title":"Differences in the Evolution of Surface-Microstructured Silicon Fabricated by Femtosecond Laser Pulses with Different Wavelength","volume":"51","author":"Peng","year":"2012","journal-title":"Appl. Opt."},{"issue":"8","key":"2026092321464861200_cit64","doi-asserted-by":"publisher","first-page":"2752","DOI":"10.1016\/j.apsusc.2005.04.048","article-title":"Effect of Polarization on Femtosecond Laser Pulses Structuring Silicon Surface","volume":"252","author":"Zhu","year":"2006","journal-title":"Appl. Surf. Sci."},{"issue":"3","key":"2026092321464861200_cit65","doi-asserted-by":"publisher","DOI":"10.1371\/journal.pone.0283456","article-title":"The Use of Remote Femto Second Technology in the Preparation of Black Silicon Material and Optical Devices","volume":"18","author":"Li","year":"2023","journal-title":"PLOS One"},{"issue":"20","key":"2026092321464861200_cit66","doi-asserted-by":"publisher","first-page":"6791","DOI":"10.1016\/j.tsf.2007.12.117","article-title":"Micro and Nano-Structuration of Silicon by Femtosecond Laser: Application to Silicon Photovoltaic Cells Fabrication","volume":"516","author":"Halbwax","year":"2008","journal-title":"Thin Solid Films"},{"issue":"23","key":"2026092321464861200_cit67","doi-asserted-by":"publisher","first-page":"5694","DOI":"10.1063\/1.1828575","article-title":"Femtosecond Laser-Induced Formation of Submicrometer Spikes on Silicon in Water","volume":"85","author":"Shen","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2026092321464861200_cit68","doi-asserted-by":"publisher","first-page":"33","DOI":"10.1117\/12.2608708","article-title":"Surface Modification of Silicon by Femtosecond Laser Ablation in Liquid","volume-title":"Laser-based Micro- and Nanoprocessing XVI","author":"Maack","year":"2022"},{"key":"2026092321464861200_cit69","doi-asserted-by":"publisher","first-page":"149","DOI":"10.1016\/j.apsusc.2017.03.158","article-title":"Direct Ultrashort Laser Surface Structuring of Silicon in Air and Vacuum at 1055 nm","volume":"417","author":"Nivas","year":"2017","journal-title":"Appl. Surf. Sci."},{"issue":"8","key":"2026092321464861200_cit70","doi-asserted-by":"publisher","DOI":"10.1002\/admt.202301567","article-title":"Liquid-assisted Laser Nanotexturing of Silicon: Onset of Hydrodynamic Processes Regulated by Laser-induced Periodic Surface Structures","volume":"9","author":"Borodaenko","year":"2024","journal-title":"Adv. Mater. Technol."},{"key":"2026092321464861200_cit71","doi-asserted-by":"publisher","DOI":"10.1016\/j.matchemphys.2020.122909","article-title":"Engineering the Crystalline Silicon Surface by Femtosecond Laser Processing in Liquid: Hierarchical Micro\/Nanostructure and Amorphization","volume":"248","author":"Cao","year":"2020","journal-title":"Mater. Chem. Phys."},{"issue":"43","key":"2026092321464861200_cit72","doi-asserted-by":"publisher","first-page":"49265","DOI":"10.1021\/acsami.0c16894","article-title":"Broad-Band Ultra-Low-Reflectivity Multiscale Micro\u2013Nano Structures by the Combination of Femtosecond Laser Ablation and In Situ Deposition","volume":"12","author":"Chen","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026092321464861200_cit73","doi-asserted-by":"publisher","DOI":"10.1016\/j.ijheatmasstransfer.2020.120532","article-title":"Weakening Heat Accumulation Behavior Caused by Femtosecond Pulses for High-Performance Antireflection Micro-Nano Porous Structures","volume":"164","author":"Chen","year":"2021","journal-title":"Int. J. Heat Mass Transfer"},{"issue":"10","key":"2026092321464861200_cit74","doi-asserted-by":"publisher","DOI":"10.1364\/OE.522725","article-title":"Sub-Bandgap Photo-Response of Black Silicon Fabricated by Femtosecond Laser Irradiation under Water","volume":"32","author":"Wang","year":"2024","journal-title":"Opt. Express"},{"issue":"2","key":"2026092321464861200_cit75","doi-asserted-by":"publisher","first-page":"2921","DOI":"10.1021\/acsami.3c15234","article-title":"Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water","volume":"16","author":"Wang","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"4","key":"2026092321464861200_cit76","doi-asserted-by":"publisher","DOI":"10.1088\/2631-7990\/abb5f3","article-title":"Femtosecond Laser Shockwave Peening Ablation in Liquids for Hierarchical Micro\/Nanostructuring of Brittle Silicon and Its Biological Application","volume":"2","author":"Zhang","year":"2020","journal-title":"Int. J. Extreme Manuf."},{"issue":"47","key":"2026092321464861200_cit77","doi-asserted-by":"publisher","first-page":"65710","DOI":"10.1021\/acsami.4c16830","article-title":"Au-Doped Black Silicon Photodetector Fabricated by a Femtosecond Laser with Excellent near-Infrared Response","volume":"16","author":"Tao","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026092321464861200_cit78","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2023.156624","article-title":"Broadband MSM Photodetector Based on S-Doped Black Silicon Fabricated by Femtosecond Laser","volume":"619","author":"Zhao","year":"2023","journal-title":"Appl. Surf. Sci."},{"issue":"11","key":"2026092321464861200_cit79","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202410480","article-title":"Fabrication of Silicon Surface Microstructures via Vortex Femtosecond Laser Irradiation for Reusable Substrates in SERS Applications","volume":"21","author":"Du","year":"2025","journal-title":"Small"},{"issue":"9","key":"2026092321464861200_cit80","doi-asserted-by":"publisher","first-page":"1345","DOI":"10.1515\/nanoph-2024-0690","article-title":"Continuously Adjustable Hollow Beam for Ultrafast Laser Fabrication of Size-Controllable Nanoparticles","volume":"14","author":"Wang","year":"2025","journal-title":"Nanophotonics"},{"key":"2026092321464861200_cit81","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2019.145182","article-title":"Multi-Scale Micro-Nano Structures Prepared by Laser Cleaning Assisted Laser Ablation for Broadband Ultralow Reflectivity Silicon Surfaces in Ambient Air","volume":"509","author":"Chen","year":"2020","journal-title":"Appl. Surf. Sci."},{"issue":"4","key":"2026092321464861200_cit82","doi-asserted-by":"publisher","first-page":"677","DOI":"10.1103\/RevModPhys.40.677","article-title":"Metal-Insulator Transition","volume":"40","author":"Mott","year":"1968","journal-title":"Rev. Mod. Phys."},{"key":"2026092321464861200_cit83","doi-asserted-by":"publisher","DOI":"10.1016\/j.optmat.2024.115817","article-title":"Vis-IR Black Nano-Silicon Produced by Wet Femtosecond-Laser Nanotexturing\/Hyperdoping and Nanosecond-Laser Annealing","volume":"155","author":"Nastulyavichus","year":"2024","journal-title":"Opt. Mater."},{"issue":"7","key":"2026092321464861200_cit84","doi-asserted-by":"publisher","DOI":"10.1002\/adom.201901808","article-title":"Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation","volume":"8","author":"Huang","year":"2020","journal-title":"Adv. Opt. Mater."},{"issue":"6","key":"2026092321464861200_cit85","doi-asserted-by":"publisher","DOI":"10.1364\/OE.557119","article-title":"CMOS-Compatible High-Performance Silicon Photodetector by Femtosecond-Laser Hyperdoping and Nanosecond-Laser Annealing","volume":"33","author":"Song","year":"2025","journal-title":"Opt. Express"},{"issue":"45","key":"2026092321464861200_cit86","doi-asserted-by":"publisher","first-page":"42385","DOI":"10.1021\/acsami.9b16667","article-title":"High-Performance Free-Standing Flexible Photodetectors Based on Sulfur-Hyperdoped Ultrathin Silicon","volume":"11","author":"Jin","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"8","key":"2026092321464861200_cit87","doi-asserted-by":"publisher","first-page":"12777","DOI":"10.1021\/acsnano.2c04704","article-title":"Ultrahigh Photogain Short-Wave Infrared Detectors Enabled by Integrating Graphene and Hyperdoped Silicon","volume":"16","author":"Jiang","year":"2022","journal-title":"ACS Nano"},{"key":"2026092321464861200_cit88","doi-asserted-by":"publisher","DOI":"10.1016\/j.optlastec.2019.105913","article-title":"Broadband n+-n Photodiode Based on Tellurium-Doped Black Silicon Fabricated by Femtosecond Laser Filament","volume":"123","author":"Su","year":"2020","journal-title":"Opt. Laser Technol."},{"issue":"4","key":"2026092321464861200_cit89","doi-asserted-by":"publisher","first-page":"5239","DOI":"10.1364\/OE.385887","article-title":"Highly Responsive Tellurium-Hyperdoped Black Silicon Photodiode with Single-Crystalline and Uniform Surface Microstructure","volume":"28","author":"Jia","year":"2020","journal-title":"Opt. Express"},{"issue":"1","key":"2026092321464861200_cit90","doi-asserted-by":"publisher","DOI":"10.1186\/s11671-021-03499-x","article-title":"A Dual Four-Quadrant Photodetector Based on near-Infrared Enhanced Nanometer Black Silicon","volume":"16","author":"Mi","year":"2021","journal-title":"Nanoscale Res. Lett."},{"issue":"29","key":"2026092321464861200_cit91","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/ad3b08","article-title":"Long Infrared Detector Based on Se-Hyperdoped Black Silicon","volume":"57","author":"Tansel","year":"2024","journal-title":"J. Phys. D: Appl. Phys."},{"key":"2026092321464861200_cit92","doi-asserted-by":"publisher","DOI":"10.1016\/j.optlastec.2023.110399","article-title":"Broadband-Spectral-Responsivity of Black Silicon Photodetector with High Gain and Sub-Bandgap Sensitivity by Titanium Hyperdoping","volume":"171","author":"Huang","year":"2024","journal-title":"Opt. Laser Technol."},{"issue":"21","key":"2026092321464861200_cit93","doi-asserted-by":"publisher","DOI":"10.1063\/1.4879851","article-title":"Room-Temperature Operation of a Titanium Supersaturated Silicon-Based Infrared Photodetector","volume":"104","author":"Garcia-Hemme","year":"2014","journal-title":"Appl. Phys. Lett."},{"issue":"5","key":"2026092321464861200_cit94","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.202300738","article-title":"The Mechanism behind the Annealing-Induced Reduction of Infrared Absorption in Zinc-Hyperdoped Silicon","volume":"221","author":"Hu","year":"2024","journal-title":"Phys. Status Solidi A"},{"key":"2026092321464861200_cit95","doi-asserted-by":"publisher","DOI":"10.1016\/j.optlastec.2021.107415","article-title":"Zinc-Hyperdoped Silicon Nanocrystalline Layers Prepared via Nanosecond Laser Melting for Broad Light Absorption","volume":"144","author":"Wen","year":"2021","journal-title":"Opt. Laser Technol."},{"issue":"3","key":"2026092321464861200_cit96","doi-asserted-by":"publisher","DOI":"10.1007\/s11082-023-04556-8","article-title":"Sub-Bandgap Photo-Response of Mo-Hyperdoped Black Silicon MSM Photodetectors","volume":"55","author":"Yang","year":"2023","journal-title":"Opt. Quantum Electron."},{"issue":"3","key":"2026092321464861200_cit97","doi-asserted-by":"publisher","DOI":"10.1364\/PRJ.7.000351","article-title":"Visible-Blind Short-Wavelength Infrared Photodetector with High Responsivity Based on Hyperdoped Silicon","volume":"7","author":"Qiu","year":"2019","journal-title":"Photonics Res."},{"issue":"22","key":"2026092321464861200_cit98","doi-asserted-by":"publisher","first-page":"25695","DOI":"10.1109\/JSEN.2021.3119020","article-title":"Sub-Bandgap Photo-Response of Chromium Hyperdoped Black Silicon Photodetector Fabricated by Femtosecond Laser Pulses","volume":"21","author":"Li","year":"2021","journal-title":"IEEE Sens. J."},{"key":"2026092321464861200_cit99","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2025.182100","article-title":"Enhanced Broadband Photodetection in ZnO\/Black Silicon Heterojunctions from Ultraviolet to Short-Wave Infrared","volume":"1037","author":"Dong","year":"2025","journal-title":"J. Alloys Compd."},{"issue":"17","key":"2026092321464861200_cit100","doi-asserted-by":"publisher","first-page":"27373","DOI":"10.1109\/JSEN.2024.3424251","article-title":"Enhancing Infrared Photodiode Performance by Femtosecond Laser Hyperdoping","volume":"24","author":"Dong","year":"2024","journal-title":"IEEE Sens. J."},{"issue":"5","key":"2026092321464861200_cit101","doi-asserted-by":"publisher","first-page":"2364","DOI":"10.1109\/TED.2023.3261823","article-title":"Record-Breaking-High-Responsivity Silicon Photodetector at Infrared 1.31 and 1.55 \u03bcm by Argon Doping Technique","volume":"70","author":"Li","year":"2023","journal-title":"IEEE Trans. Electron Devices"},{"issue":"9","key":"2026092321464861200_cit102","doi-asserted-by":"publisher","first-page":"3595","DOI":"10.1109\/JSEN.2018.2812730","article-title":"Black Silicon IR Photodiode Supersaturated with Nitrogen by Femtosecond Laser Irradiation","volume":"18","author":"Li","year":"2018","journal-title":"IEEE Sens. J."},{"issue":"8","key":"2026092321464861200_cit103","doi-asserted-by":"publisher","first-page":"17393","DOI":"10.1364\/OE.553808","article-title":"Ultra-Low-Light Visible-near-Infrared Position-Sensitive Detector Based on Femtosecond Laser Nitrogen-Hyperdoped Silicon","volume":"33","author":"Huang","year":"2025","journal-title":"Opt. Express"},{"issue":"13","key":"2026092321464861200_cit104","doi-asserted-by":"publisher","first-page":"5227","DOI":"10.1109\/JSEN.2016.2564500","article-title":"The Optical and Electrical Properties of Co-Doped Black Silicon Textured by a Femtosecond Laser and Its Application to Infrared Light Sensing","volume":"16","author":"Yu","year":"2016","journal-title":"IEEE Sens. J."},{"issue":"2","key":"2026092321464861200_cit105","doi-asserted-by":"publisher","first-page":"367","DOI":"10.1364\/OL.541860","article-title":"Enhancing the Sub-Bandgap Photo-Response of Silicon by Inert Element Co-Hyperdoping","volume":"50","author":"Zhu","year":"2025","journal-title":"Opt. Lett."},{"issue":"19","key":"2026092321464861200_cit106","doi-asserted-by":"publisher","DOI":"10.3390\/nano14191591","article-title":"Synergic Effect of N and Se Facilitates Photoelectric Performance in Co-Hyperdoped Silicon","volume":"14","author":"Sun","year":"2024","journal-title":"Nanomaterials"},{"issue":"6","key":"2026092321464861200_cit107","doi-asserted-by":"publisher","first-page":"3775","DOI":"10.1109\/TED.2024.3394458","article-title":"Extrinsic Photodetector Based on Co-Hyperdoped Black Silicon","volume":"71","author":"Li","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"issue":"1","key":"2026092321464861200_cit108","doi-asserted-by":"publisher","first-page":"288","DOI":"10.1007\/s10854-017-7915-1","article-title":"Research on Photoelectric Characteristics of (S, Se) Co-Doped Silicon Fabricated by Femtosecond-Laser Irradiation","volume":"29","author":"Li","year":"2018","journal-title":"J. Mater. Sci.: Mater. Electron."},{"issue":"6","key":"2026092321464861200_cit109","doi-asserted-by":"publisher","DOI":"10.1063\/1.4790808","article-title":"Mid-Infrared Absorptance of Silicon Hyperdoped with Chalcogen via Fs-Laser Irradiation","volume":"113","author":"Sher","year":"2013","journal-title":"J. Appl. Phys."},{"issue":"10","key":"2026092321464861200_cit110","doi-asserted-by":"publisher","DOI":"10.1063\/1.4820454","article-title":"Methodology for Vetting Heavily Doped Semiconductors for Intermediate Band Photovoltaics: A Case Study in Sulfur-Hyperdoped Silicon","volume":"114","author":"Sullivan","year":"2013","journal-title":"J. Appl. Phys."},{"issue":"2","key":"2026092321464861200_cit111","doi-asserted-by":"publisher","first-page":"327","DOI":"10.1007\/s00339-009-5200-8","article-title":"The Role of Diffusion in Broadband Infrared Absorption in Chalcogen-Doped Silicon","volume":"96","author":"Tull","year":"2009","journal-title":"Appl. Phys. A"},{"issue":"3","key":"2026092321464861200_cit112","doi-asserted-by":"publisher","first-page":"502","DOI":"10.1109\/TNANO.2017.2693691","article-title":"Gold-Hyperdoped Black Silicon with High IR Absorption by Femtosecond Laser Irradiation","volume":"16","author":"Yu","year":"2017","journal-title":"IEEE Trans. Nanotechnol."},{"issue":"13","key":"2026092321464861200_cit113","doi-asserted-by":"publisher","first-page":"3300","DOI":"10.1364\/OL.425803","article-title":"Sub-Bandgap Absorption and Photo-Response of Molybdenum Heavily Doped Black Silicon Fabricated by a Femtosecond Laser","volume":"46","author":"Yang","year":"2021","journal-title":"Opt. Lett."},{"key":"2026092321464861200_cit114","doi-asserted-by":"publisher","first-page":"5","DOI":"10.1002\/9780470068328.ch1","article-title":"Physics and Properties of Semiconductors\u2014A Review","author":"Sze","year":"2006","journal-title":"Physics of Semiconductor Devices"},{"issue":"1","key":"2026092321464861200_cit115","doi-asserted-by":"publisher","first-page":"320","DOI":"10.1016\/j.physb.2006.03.006","article-title":"Intermediate Bands versus Levels in Non-Radiative Recombination","volume":"382","author":"Luque","year":"2006","journal-title":"Phys. B"},{"issue":"4","key":"2026092321464861200_cit116","doi-asserted-by":"publisher","DOI":"10.1063\/1.3077202","article-title":"Lifetime Recovery in Ultrahighly Titanium-Doped Silicon for the Implementation of an Intermediate Band Material","volume":"94","author":"Antol\u00edn","year":"2009","journal-title":"Appl. Phys. Lett."},{"issue":"11","key":"2026092321464861200_cit117","doi-asserted-by":"publisher","first-page":"2855","DOI":"10.1002\/pssa.201600524","article-title":"High near Infrared Absorption of Hyper-Doped Silicon Induced by Co-Doping of Sulfur and Nitrogen","volume":"213","author":"Xuan","year":"2016","journal-title":"Phys. Status Solidi A"},{"key":"2026092321464861200_cit118","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2023.171482","article-title":"Creating Zinc-Hyperdoped Silicon with Modulated Conduction Type by Femtosecond Laser Irradiation","volume":"966","author":"Ren","year":"2023","journal-title":"J. Alloys Compd."},{"issue":"9","key":"2026092321464861200_cit119","doi-asserted-by":"publisher","DOI":"10.1103\/hrr7-q9rk","article-title":"Tuned Ionic Mobility by Ultrafast Laser Pulses in Black Silicon","volume":"112","author":"Mebou","year":"2025","journal-title":"Phys. Rev. B"},{"issue":"7","key":"2026092321464861200_cit120","doi-asserted-by":"publisher","first-page":"2147","DOI":"10.1016\/j.apsusc.2009.09.065","article-title":"Functionality of Novel Black Silicon Based Nanostructured Surfaces Studied by TOF SIMS","volume":"256","author":"Talian","year":"2010","journal-title":"Appl. Surf. Sci."},{"issue":"11\u201312","key":"2026092321464861200_cit121","doi-asserted-by":"publisher","first-page":"589","DOI":"10.1016\/j.elspec.2011.10.004","article-title":"X-Ray Photoelectron Spectroscopic Studies of Black Silicon for Solar Cell","volume":"184","author":"Xia","year":"2012","journal-title":"J. Electron Spectrosc. Relat. Phenom."},{"issue":"2","key":"2026092321464861200_cit122","doi-asserted-by":"publisher","first-page":"115","DOI":"10.1016\/S0968-4328(00)00004-4","article-title":"Phase Identification of Microfeatures Using EPMA Methods, especially high-eesolution x-ray spectroscopy","volume":"32","author":"Love","year":"2001","journal-title":"Micron"},{"key":"2026092321464861200_cit123","doi-asserted-by":"publisher","DOI":"10.1016\/j.optlastec.2025.113534","article-title":"LIBS Analysis of Element Content and Amorphous Phase in Laser Hyperdoped Hyperdoped Black Silicon","volume":"192","author":"Zhang","year":"2025","journal-title":"Opt. Laser Technol."},{"key":"2026092321464861200_cit124","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2025.109880","article-title":"Characteristic Timescales of Carrier Dynamics in Sulfur-Hyperdoped Silicon Probed by Femtosecond Laser Optical Pump\/THz Probe Pulses","volume":"199","author":"Kudryashov","year":"2025","journal-title":"Mater. Sci. Semicond. Process."},{"key":"2026092321464861200_cit125","doi-asserted-by":"publisher","DOI":"10.1016\/j.optmat.2020.110474","article-title":"The Dark Current Suppression of Black Silicon Photodetector by a Lateral Heterojunction","volume":"110","author":"Huang","year":"2020","journal-title":"Opt. Mater."},{"key":"2026092321464861200_cit126","doi-asserted-by":"publisher","first-page":"480","DOI":"10.1016\/j.egypro.2012.07.097","article-title":"Tailoring the Absorption Properties of Black Silicon","volume-title":"Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics (siliconpv 2012)","author":"Baumann","year":"2012"},{"key":"2026092321464861200_cit127","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2022.163878","article-title":"Self-Powered near-Infrared MoS2\/n-Si Photodetectors with Al2O3 Interface Passivation","volume":"902","author":"Xu","year":"2022","journal-title":"J. Alloys Compd."},{"issue":"40","key":"2026092321464861200_cit128","doi-asserted-by":"publisher","first-page":"47895","DOI":"10.1021\/acsami.1c12050","article-title":"Graphene\u2013Silicon Device for Visible and Infrared Photodetection","volume":"13","author":"Pelella","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026092321464861200_cit129","doi-asserted-by":"publisher","DOI":"10.1016\/j.optlastec.2022.108291","article-title":"High-Responsivity Graphene\/Hyperdoped-Silicon Heterostructure Infrared Photodetectors","volume":"153","author":"Wang","year":"2022","journal-title":"Opt. Laser Technol."},{"issue":"44","key":"2026092321464861200_cit130","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201903831","article-title":"Light Confinement Effect Induced Highly Sensitive, Self-driven Near-infrared Photodetector and Image Sensor Based on Multilayer PdSe2\/Pyramid Si Heterojunction","volume":"15","author":"Liang","year":"2019","journal-title":"Small"},{"issue":"1","key":"2026092321464861200_cit131","doi-asserted-by":"publisher","DOI":"10.1007\/s40820-025-01836-8","article-title":"Monolithic Perovskite\/Perovskite\/Silicon Triple-Junction Solar Cells: Fundamentals, Progress, and Prospects","volume":"18","author":"Duan","year":"2026","journal-title":"Nano-Micro Lett."},{"issue":"11","key":"2026092321464861200_cit132","doi-asserted-by":"publisher","first-page":"2644","DOI":"10.1016\/j.joule.2022.09.006","article-title":"Monolithic Perovskite\/Black-Silicon Tandems Based on Tunnel Oxide Passivated Contacts","volume":"6","author":"Ying","year":"2022","journal-title":"Joule"},{"issue":"21","key":"2026092321464861200_cit133","doi-asserted-by":"publisher","first-page":"36362","DOI":"10.1364\/OE.537025","article-title":"Femtosecond Laser-Induced Black Silicon: A Dual Application in Photodetection and Surface-Enhanced Raman Scattering","volume":"32","author":"Wang","year":"2024","journal-title":"Opt. Express"},{"issue":"3","key":"2026092321464861200_cit134","doi-asserted-by":"publisher","first-page":"691","DOI":"10.1515\/nanoph-2019-0460","article-title":"Shaped Femtosecond Laser Induced Photoreduction for Highly Controllable Au Nanoparticles Based on Localized Field Enhancement and Their SERS Applications","volume":"9","author":"Li","year":"2020","journal-title":"Nanophotonics"},{"issue":"7","key":"2026092321464861200_cit135","doi-asserted-by":"publisher","first-page":"2447","DOI":"10.1007\/s12598-023-02292-2","article-title":"High-Dielectric Loss Black Silicon Decorated with Multi-Nanostructure for Wide-Band Mid-Infrared Absorption","volume":"42","author":"Zhang","year":"2023","journal-title":"Rare Met."},{"issue":"8","key":"2026092321464861200_cit136","doi-asserted-by":"publisher","DOI":"10.3390\/nano13081300","article-title":"Noble-Metal Nanoparticle-Embedded Silicon Nanogratings via Single-Step Laser-Induced Periodic Surface Structuring","volume":"13","author":"Borodaenko","year":"2023","journal-title":"Nanomaterials"},{"issue":"24","key":"2026092321464861200_cit137","doi-asserted-by":"publisher","first-page":"35743","DOI":"10.1021\/acsami.5c05045","article-title":"Pushing Photodetection beyond the Limit of Silicon PIN Junctions through In Situ Integration of Randomly Interlinked Gold Nanoparticles and Black Silicon","volume":"17","author":"Mi","year":"2025","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"49","key":"2026092321464861200_cit138","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202409354","article-title":"On-Chip Room-Temperature Operated Short-Wavelength-Infrared Si:S Photodetector with a Vertical Junction","volume":"34","author":"Xiao","year":"2024","journal-title":"Adv. Funct. Mater."},{"issue":"17","key":"2026092321464861200_cit139","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202419382","article-title":"All-Silicon Broadband Infrared Photodetectors with In-Plane Photon Trapping Structures","volume":"37","author":"Deng","year":"2025","journal-title":"Adv. Mater."},{"key":"2026092321464861200_cit140","doi-asserted-by":"publisher","DOI":"10.1016\/j.optlastec.2022.108873","article-title":"CMOS-Compatible Direct Laser Writing of Sulfur-Ultrahyperdoped Silicon: Breakthrough Pre-Requisite for UV-THz Optoelectronic Nano\/Microintegration","volume":"158","author":"Kudryashov","year":"2023","journal-title":"Opt. Laser Technol."},{"key":"2026092321464861200_cit141","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfin.2024.105568","article-title":"Polarized p\u2013n Junction Si Photodetector Enabled by Direct Laser-Induced Periodic Surface Structuring","volume":"56","author":"Borodaenko","year":"2025","journal-title":"Surf. Interfaces"},{"key":"2026092321464861200_cit142","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2022.111942","article-title":"Ultrafast Photoresponse in N-MoS2\/AlN\/p-Si (SIS) Heterojunction Based Visible to NIR Photodetectors","volume":"246","author":"Kumar","year":"2022","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"2026092321464861200_cit143","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfin.2022.101945","article-title":"High-Sensitivity Silicon: PbS Quantum Dot Heterojunction near-Infrared Photodetector","volume":"30","author":"Wang","year":"2022","journal-title":"Surf. Interfaces"},{"issue":"3","key":"2026092321464861200_cit144","doi-asserted-by":"publisher","first-page":"3161","DOI":"10.1364\/OE.27.003161","article-title":"Black Silicon Schottky Photodetector in Sub-Bandgap near-Infrared Regime","volume":"27","author":"Hu","year":"2019","journal-title":"Opt. Express"},{"key":"2026092321464861200_cit145","doi-asserted-by":"publisher","DOI":"10.1117\/12.849683","article-title":"Black Silicon Enhanced Photodetectors: A Path to IR CMOS","volume":"7660","author":"Pralle","year":"2010","journal-title":"Proc. SPIE"},{"key":"2026092321464861200_cit146","doi-asserted-by":"publisher","DOI":"10.1117\/12.2544756","article-title":"High-Sensitivity NIR Photodiodes Using Black Silicon","volume":"11276","author":"Heinonen","year":"2020","journal-title":"Proc. SPIE"},{"issue":"44","key":"2026092321464861200_cit147","doi-asserted-by":"publisher","first-page":"61410","DOI":"10.1021\/acsami.5c12917","article-title":"Ultrasensitive Food and Water Sensing by Recyclable, Femtosecond Laser-Structured Surfaces","volume":"17","author":"Zhao","year":"2025","journal-title":"ACS Appl. Mater. Interfaces"}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c05804","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/36\/48545\/68099966\/am-2026-05804q.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/36\/48545\/68099966\/am-2026-05804q.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T08:09:41Z","timestamp":1790237381000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/36\/48545\/5395630\/Infrared-Photodetector-Fabrication-by-Femtosecond"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,7]]},"references-count":147,"journal-issue":{"issue":"36","published-online":{"date-parts":[[2026,9,7]]},"published-print":{"date-parts":[[2026,9,16]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c05804","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,7]]}}}