{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T21:29:49Z","timestamp":1787174989600,"version":"build-2736575974"},"reference-count":55,"publisher":"American Chemical Society (ACS)","issue":"31","license":[{"start":{"date-parts":[[2026,7,30]],"date-time":"2026-07-30T00:00:00Z","timestamp":1785369600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100020950","name":"National Science and Technology Council","doi-asserted-by":"publisher","award":["NSTC 113-2221-E-007-052-MY3"],"award-info":[{"award-number":["NSTC 113-2221-E-007-052-MY3"]}],"id":[{"id":"10.13039\/501100020950","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100020950","name":"National Science and Technology Council","doi-asserted-by":"publisher","award":["NSTC 114-2124-M-007-002"],"award-info":[{"award-number":["NSTC 114-2124-M-007-002"]}],"id":[{"id":"10.13039\/501100020950","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100020950","name":"National Science and Technology Council","doi-asserted-by":"publisher","award":["NSTC 114-2221-E-492-019"],"award-info":[{"award-number":["NSTC 114-2221-E-492-019"]}],"id":[{"id":"10.13039\/501100020950","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,8,12]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional transition metal dichalcogenides (TMDs) are promising candidates for next-generation neuromorphic electronics owing to their tunable electronic structure and defect-mediated charge dynamics. Here, we demonstrate alloying engineering of Mo1\u2013xWxS2 (0 \u2264 x \u2264 1) via chemical vapor deposition to precisely tailor the lattice strain, defect density, and optoelectronic properties. Structural and spectroscopic analyses confirm the homogeneous distribution of Mo and W atoms within the alloy lattice, accompanied by strain fields that enhance trap-mediated charge processes. Optical measurements reveal composition-dependent bandgap tuning and exciton lifetimes, with near-equiatomic MoWS2 exhibiting the strongest non-radiative recombination pathways. Synaptic field-effect transistors based on these alloys display pronounced hysteresis windows of up to 22 V, high interface trap densities, and robust low-frequency noise characteristics, effectively linking alloy disorder to defect-driven memory functions. Remarkably, near-equiatomic MoWS2 synaptic devices emulate key biological features, including a paired-pulse facilitation index of up to 188%, dynamic learning\u2013forgetting\u2013relearning cycles, stable long-term potentiation\/depression, and an 87.95% recognition accuracy in CNN simulation. These findings establish alloy-engineered Mo1\u2013xWxS2 as a powerful platform for defect\u2013strain coupling and neuromorphic functionality in two-dimensional materials.<\/jats:p>","DOI":"10.1021\/acsami.6c09287","type":"journal-article","created":{"date-parts":[[2026,8,4]],"date-time":"2026-08-04T13:22:21Z","timestamp":1785849741000},"page":"42934-42944","source":"Crossref","is-referenced-by-count":0,"title":["Boosting Neuromorphic Synapses through Alloying-Induced Trap Engineering in Two-Dimensional Mo1\u2013\n                    <i>x<\/i>\n                    W\n                    <i>x<\/i>\n                    S2"],"prefix":"10.1021","volume":"18","author":[{"given":"Po-Yu","family":"Wei","sequence":"first","affiliation":[{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-6598-0745","authenticated-orcid":true,"given":"Chen-Yo","family":"Tsai","sequence":"additional","affiliation":[{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chong-Chi","family":"Chi","sequence":"additional","affiliation":[{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chun-Hui","family":"Lin","sequence":"additional","affiliation":[{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Meng-Chen","family":"Lo","sequence":"additional","affiliation":[{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tzu-Yi","family":"Chuang","sequence":"additional","affiliation":[{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tsai-Sheng","family":"Gau","sequence":"additional","affiliation":[{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9750-275X","authenticated-orcid":true,"given":"Ming-Pei","family":"Lu","sequence":"additional","affiliation":[{"name":"National Institutes of Applied Research , , ,","place":["Hsinchu, Taiwan, 30078"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1788-1425","authenticated-orcid":true,"given":"Ming-Yen","family":"Lu","sequence":"additional","affiliation":[{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]},{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]},{"name":"National Tsing Hua University , , ,","place":["Hsinchu, Taiwan, 300"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,7,30]]},"reference":[{"issue":"7589","key":"2026081917074049000_cit1","doi-asserted-by":"publisher","first-page":"144","DOI":"10.1038\/530144a","article-title":"The chips are down for Moore\u2019s law","volume":"530","author":"Waldrop","year":"2016","journal-title":"Nature"},{"issue":"6","key":"2026081917074049000_cit2","doi-asserted-by":"publisher","first-page":"333","DOI":"10.1038\/s41928-018-0092-2","article-title":"In-memory computing with resistive switching devices","volume":"1","author":"Ielmini","year":"2018","journal-title":"Nat. Electron."},{"issue":"9","key":"2026081917074049000_cit3","doi-asserted-by":"publisher","first-page":"499","DOI":"10.1038\/s42254-020-0208-2","article-title":"Physics for neuromorphic computing","volume":"2","author":"Markovi\u0107","year":"2020","journal-title":"Nat. Rev. Phys."},{"issue":"4","key":"2026081917074049000_cit4","doi-asserted-by":"publisher","first-page":"414","DOI":"10.1038\/nmat4856","article-title":"A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing","volume":"16","author":"Burgt","year":"2017","journal-title":"Nat. Mater."},{"issue":"7","key":"2026081917074049000_cit5","doi-asserted-by":"publisher","first-page":"360","DOI":"10.1038\/s41928-019-0360-9","article-title":"Neuromorphic spintronics","volume":"3","author":"Grollier","year":"2020","journal-title":"Nat. Electron."},{"issue":"10","key":"2026081917074049000_cit6","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202416811","article-title":"Enhancing Computing Capacity via Reconfigurable MoS2-Based Artificial Synapse With Dual Feature Strategy for Wide Reservoir Computing","volume":"35","author":"Lee","year":"2025","journal-title":"Adv. Funct. Mater."},{"issue":"1","key":"2026081917074049000_cit7","doi-asserted-by":"publisher","first-page":"13","DOI":"10.1038\/nnano.2012.240","article-title":"Memristive devices for computing","volume":"8","author":"Yang","year":"2013","journal-title":"Nat. Nanotechnol."},{"issue":"1","key":"2026081917074049000_cit8","doi-asserted-by":"publisher","first-page":"14736","DOI":"10.1038\/ncomms14736","article-title":"Learning through ferroelectric domain dynamics in solid-state synapses","volume":"8","author":"Boyn","year":"2017","journal-title":"Nat. Commun."},{"issue":"1","key":"2026081917074049000_cit9","doi-asserted-by":"publisher","DOI":"10.1080\/14686996.2022.2162323","article-title":"A review of memristor: material and structure design, device performance, applications and prospects","volume":"24","author":"Xiao","year":"2023","journal-title":"Sci. Technol. Adv. Mater."},{"issue":"3","key":"2026081917074049000_cit10","doi-asserted-by":"publisher","first-page":"179","DOI":"10.3390\/nano16030179","article-title":"Memristor Synapse\u2014A Device-Level Critical Review","volume":"16","author":"Chandrasekaran","year":"2026","journal-title":"Nanomaterials"},{"issue":"51","key":"2026081917074049000_cit11","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202002092","article-title":"Memristors based on 2D materials as an artificial synapse for neuromorphic electronics","volume":"32","author":"Huh","year":"2020","journal-title":"Adv. Mater."},{"issue":"4","key":"2026081917074049000_cit12","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202005443","article-title":"2D material based synaptic devices for neuromorphic computing","volume":"31","author":"Cao","year":"2021","journal-title":"Adv. Funct. Mater."},{"issue":"3","key":"2026081917074049000_cit13","doi-asserted-by":"publisher","first-page":"3110","DOI":"10.1021\/acsnano.7b00113","article-title":"Mimicking neurotransmitter release in chemical synapses via hysteresis engineering in MoS2 transistors","volume":"11","author":"Arnold","year":"2017","journal-title":"ACS Nano"},{"issue":"1","key":"2026081917074049000_cit14","doi-asserted-by":"publisher","first-page":"58","DOI":"10.1038\/s41565-020-00789-w","article-title":"Observation of single-defect memristor in an MoS2 atomic sheet","volume":"16","author":"Hus","year":"2021","journal-title":"Nat. Nanotechnol."},{"issue":"9","key":"2026081917074049000_cit15","doi-asserted-by":"publisher","first-page":"092104","DOI":"10.1063\/1.4867197","article-title":"p-type doping of MoS2 thin films using Nb","volume":"104","author":"Laskar","year":"2014","journal-title":"Appl. Phys. Lett."},{"issue":"22","key":"2026081917074049000_cit16","doi-asserted-by":"publisher","first-page":"7853","DOI":"10.1021\/ja5033327","article-title":"Air-stable surface charge transfer doping of MoS2 by benzyl viologen","volume":"136","author":"Kiriya","year":"2014","journal-title":"J. Am. Chem. Soc."},{"issue":"48","key":"2026081917074049000_cit17","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202201630","article-title":"2D transition metal dichalcogenide with increased entropy for piezoelectric electronics","volume":"34","author":"Chen","year":"2022","journal-title":"Adv. Mater."},{"issue":"5","key":"2026081917074049000_cit18","doi-asserted-by":"publisher","first-page":"1949","DOI":"10.1021\/acsaem.3c03098","article-title":"Amorphous MoWSx Alloy Nanosheets via Room-Temperature Precipitation Method for Enhanced Electrocatalytic Hydrogen Evolution Reactions","volume":"7","author":"Chougule","year":"2024","journal-title":"ACS Appl. Energy Mater."},{"issue":"7","key":"2026081917074049000_cit19","doi-asserted-by":"publisher","first-page":"2714","DOI":"10.1021\/acsaelm.6c00115","article-title":"Zero-Bias Photodetection and Opto-Synaptic Plasticity in BP\/MoS2 and WS2\/PdSe2 van der Waals Heterostructures","volume":"8","author":"Durante","year":"2026","journal-title":"ACS Appl. Electron. Mater."},{"issue":"7","key":"2026081917074049000_cit20","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202302229","article-title":"Supersensitive and Broadband Photodetectors Based on High Concentration of Er3+\/Yb3+ Co-doped WS2 Monolayer","volume":"12","author":"Liu","year":"2024","journal-title":"Adv. Opt. Mater."},{"issue":"12","key":"2026081917074049000_cit21","doi-asserted-by":"publisher","DOI":"10.1002\/smtd.202201079","article-title":"Highly Efficient Deposition of Centimeter-Scale MoS2 Monolayer Film on Dragontrail Glass with Large Single-Crystalline Domains","volume":"6","author":"Yang","year":"2022","journal-title":"Small Methods"},{"issue":"5","key":"2026081917074049000_cit22","doi-asserted-by":"publisher","first-page":"7503","DOI":"10.1021\/acsnano.1c10593","article-title":"Visualization of Band Shifting and Interlayer Coupling in WxMo1\u2013xS2 Alloys Using Near-Field Broadband Absorption Microscopy","volume":"16","author":"Tang","year":"2022","journal-title":"ACS Nano"},{"issue":"10","key":"2026081917074049000_cit23","doi-asserted-by":"publisher","first-page":"2646","DOI":"10.1007\/s12274-019-2502-9","article-title":"Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2","volume":"12","author":"Cun","year":"2019","journal-title":"Nano Res."},{"issue":"2","key":"2026081917074049000_cit24","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.93.026805","article-title":"Cluster core-level binding-energy shifts: the role of lattice strain","volume":"93","author":"Richter","year":"2004","journal-title":"Phys. Rev. Lett."},{"issue":"44","key":"2026081917074049000_cit25","doi-asserted-by":"publisher","first-page":"445203","DOI":"10.1088\/1361-6528\/aba659","article-title":"Stable and high-performance piezoelectric sensor via CVD grown WS2","volume":"31","author":"Kim","year":"2020","journal-title":"Nanotechnology"},{"issue":"1","key":"2026081917074049000_cit26","doi-asserted-by":"publisher","DOI":"10.1063\/5.0022790","article-title":"Strain-mediated unusual bandgap bowing in continuous composition tuned monolayer Mo1\u2013xWxS2 ternary alloys","volume":"118","author":"Murugan","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"2026081917074049000_cit27","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2022.153827","article-title":"A study of in situ reduction of MoO3 to MoO2 by X-ray Photoelectron Spectroscopy","volume":"598","author":"Garland","year":"2022","journal-title":"Appl. Surf. Sci."},{"key":"2026081917074049000_cit28","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2023.158554","article-title":"Confined oxidation of 2D WS2 nanosheets forming WO3\/WS2 nanocomposites for room temperature NO2 gas sensing application","volume":"642","author":"Patrick","year":"2024","journal-title":"Appl. Surf. Sci."},{"issue":"23","key":"2026081917074049000_cit29","doi-asserted-by":"publisher","first-page":"20979","DOI":"10.1021\/acsami.9b03608","article-title":"One-Step Growth of Spatially Graded Mo1\u2013xWxS2 Monolayers with a Wide Span in Composition (from x = 0 to 1) at a Large Scale","volume":"11","author":"Yang","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"37","key":"2026081917074049000_cit30","doi-asserted-by":"publisher","first-page":"44693","DOI":"10.1021\/acsami.1c09176","article-title":"Spatially Graded Millimeter Sized Mo1\u2013xWxS2 Monolayer Alloys: Synthesis and Memory Effect","volume":"13","author":"Yu","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"30","key":"2026081917074049000_cit31","doi-asserted-by":"publisher","first-page":"11754","DOI":"10.1021\/jacs.9b03453","article-title":"WO3\u2013WS2 vertical bilayer heterostructures with high photoluminescence quantum yield","volume":"141","author":"Zheng","year":"2019","journal-title":"J. Am. Chem. Soc."},{"issue":"38","key":"2026081917074049000_cit32","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202105339","article-title":"Robust and high photoluminescence in WS2 monolayer through in situ defect engineering","volume":"31","author":"Cui","year":"2021","journal-title":"Adv. Funct. Mater."},{"issue":"5","key":"2026081917074049000_cit33","doi-asserted-by":"publisher","first-page":"5179","DOI":"10.1021\/acsnano.7b02521","article-title":"Highly stable near-unity photoluminescence yield in monolayer MoS2 by fluoropolymer encapsulation and superacid treatment","volume":"11","author":"Kim","year":"2017","journal-title":"ACS Nano"},{"issue":"2","key":"2026081917074049000_cit34","doi-asserted-by":"publisher","first-page":"397","DOI":"10.1039\/C9MH00500E","article-title":"It's a trap! On the nature of localised states and charge trapping in lead halide perovskites","volume":"7","author":"Jin","year":"2020","journal-title":"Mater. Horiz."},{"issue":"3","key":"2026081917074049000_cit35","doi-asserted-by":"publisher","first-page":"391","DOI":"10.1038\/s41563-023-01771-2","article-title":"Shallow defects and variable photoluminescence decay times up to 280 \u00b5s in triple-cation perovskites","volume":"23","author":"Yuan","year":"2024","journal-title":"Nat. Mater."},{"issue":"14","key":"2026081917074049000_cit36","doi-asserted-by":"publisher","first-page":"13545","DOI":"10.1021\/acsnano.3c02103","article-title":"Room-temperature photoluminescence mediated by sulfur vacancies in 2D molybdenum disulfide","volume":"17","author":"Zhu","year":"2023","journal-title":"ACS Nano"},{"issue":"42","key":"2026081917074049000_cit37","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202004312","article-title":"Charge-carrier trapping and radiative recombination in metal halide perovskite semiconductors","volume":"30","author":"Trimpl","year":"2020","journal-title":"Adv. Funct. Mater."},{"issue":"20","key":"2026081917074049000_cit38","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.119.207604","article-title":"Favorable Concurrence of Static and Dynamic Phenomena at the Morphotropic Phase Boundary of xBiNi0.5Zr0.5O3-(1-x)PbTiO3","volume":"119","author":"Datta","year":"2017","journal-title":"Phys. Rev. Lett."},{"issue":"3","key":"2026081917074049000_cit39","doi-asserted-by":"publisher","first-page":"131","DOI":"10.1016\/S0304-3991(98)00035-7","article-title":"Quantitative measurement of displacement and strain fields from HREM micrographs","volume":"74","author":"H\u00fftch","year":"1998","journal-title":"Ultramicroscopy"},{"key":"2026081917074049000_cit40","article-title":"Tunable direct bandgap and optical response in\\ch {Mo_ {1-x} W_xS2} monolayer alloys: A first-principles investigation","author":"Amassa","year":"2025"},{"issue":"1","key":"2026081917074049000_cit41","doi-asserted-by":"publisher","first-page":"5373","DOI":"10.1038\/s41467-020-19247-1","article-title":"Chemical trends of deep levels in van der Waals semiconductors","volume":"11","author":"Ci","year":"2020","journal-title":"Nat. Commun."},{"issue":"28","key":"2026081917074049000_cit42","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/25\/28\/285202","article-title":"Low-frequency electrical fluctuations in metal\u2013nanowire\u2013metal phototransistors","volume":"25","author":"Lu","year":"2014","journal-title":"Nanotechnology"},{"issue":"2","key":"2026081917074049000_cit43","doi-asserted-by":"publisher","first-page":"1042","DOI":"10.1021\/acs.nanolett.5b04116","article-title":"Tunability of 1\/f noise at multiple Dirac cones in hBN encapsulated graphene devices","volume":"16","author":"Kumar","year":"2016","journal-title":"Nano Lett."},{"issue":"5","key":"2026081917074049000_cit44","doi-asserted-by":"publisher","first-page":"930","DOI":"10.1021\/nl052528d","article-title":"Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes","volume":"6","author":"Lin","year":"2006","journal-title":"Nano Lett."},{"issue":"3","key":"2026081917074049000_cit45","doi-asserted-by":"publisher","first-page":"288","DOI":"10.1109\/LED.2008.2011929","article-title":"Flicker noise in bilayer graphene transistors","volume":"30","author":"Shao","year":"2009","journal-title":"IEEE Electron Device Lett."},{"key":"2026081917074049000_cit46","volume-title":"Semiconductor surface physics","author":"McWhorter","year":"1957"},{"issue":"4-5","key":"2026081917074049000_cit47","doi-asserted-by":"publisher","first-page":"573","DOI":"10.1016\/S0026-2714(02)00025-2","article-title":"Electrical noise and RTS fluctuations in advanced CMOS devices","volume":"42","author":"Ghibaudo","year":"2002","journal-title":"Microelectron. Reliab."},{"issue":"1","key":"2026081917074049000_cit48","doi-asserted-by":"publisher","first-page":"433","DOI":"10.1039\/C3NR04218A","article-title":"Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation","volume":"6","author":"Na","year":"2014","journal-title":"Nanoscale"},{"issue":"7858","key":"2026081917074049000_cit49","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1038\/s41586-021-03472-9","article-title":"Ultralow contact resistance between semimetal and monolayer semiconductors","volume":"593","author":"Shen","year":"2021","journal-title":"Nature"},{"issue":"6","key":"2026081917074049000_cit50","doi-asserted-by":"publisher","first-page":"5635","DOI":"10.1021\/nn301572c","article-title":"Hysteresis in single-layer MoS2 field effect transistors","volume":"6","author":"Late","year":"2012","journal-title":"ACS Nano"},{"issue":"44","key":"2026081917074049000_cit51","doi-asserted-by":"publisher","first-page":"30871","DOI":"10.1021\/acsnano.4c11898","article-title":"Wrinkled Rhenium Disulfide for Anisotropic Nonvolatile Memory and Multiple Artificial Neuromorphic Synapses","volume":"18","author":"Chen","year":"2024","journal-title":"ACS Nano"},{"issue":"17","key":"2026081917074049000_cit52","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201907633","article-title":"2D MXene\u2013TiO2 core\u2013shell nanosheets as a data-storage medium in memory devices","volume":"32","author":"Lyu","year":"2020","journal-title":"Adv. Mater."},{"issue":"46","key":"2026081917074049000_cit53","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202005413","article-title":"Lateral artificial synapses on hybrid perovskite platelets with modulated neuroplasticity","volume":"30","author":"Gong","year":"2020","journal-title":"Adv. Funct. Mater."},{"issue":"9","key":"2026081917074049000_cit54","doi-asserted-by":"publisher","first-page":"7669","DOI":"10.1021\/nn202983n","article-title":"Short-term memory to long-term memory transition in a nanoscale memristor","volume":"5","author":"Chang","year":"2011","journal-title":"ACS Nano"},{"issue":"1","key":"2026081917074049000_cit55","doi-asserted-by":"publisher","first-page":"1624","DOI":"10.1038\/ncomms2652","article-title":"Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices","volume":"4","author":"Choi","year":"2013","journal-title":"Nat. Commun."}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c09287","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/31\/42934\/66340547\/am-2026-09287z.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/31\/42934\/66340547\/am-2026-09287z.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T21:17:24Z","timestamp":1787174244000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/31\/42934\/5237338\/Boosting-Neuromorphic-Synapses-through-Alloying"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7,30]]},"references-count":55,"journal-issue":{"issue":"31","published-online":{"date-parts":[[2026,7,30]]},"published-print":{"date-parts":[[2026,8,12]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c09287","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7,30]]}}}