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However, the barrier at the semiconductor\/metal interface can hinder efficient carrier transport. Therefore, reducing the Schottky barrier at the semiconductor\/metal interface or utilizing the associated built-in electric field is important for improving device performance. In this study, a self-powered Gr\/MoS2\/WSe2 heterojunction photodetector based on asymmetric van der Waals (vdW) contacts was constructed, in which graphene is introduced as a transparent electrode to improve the contact characteristics of the MoS2\/Au interface. Benefiting from carrier regulation by the asymmetric barriers at the Gr\/MoS2 and WSe2\/Au interfaces, as well as the built-in electric fields with the same direction at the MoS2\/WSe2 and WSe2\/Au interfaces, the device exhibits rise\/fall times of 22\/58 \u03bcs and a low dark current of 5.54 \u00d7 10\u221213 A. Under self-powered operation, the device exhibits a responsivity of 367 mA\/W, an on\/off ratio exceeding 106, and photodetection spanning the visible and near-infrared regions. In addition, demonstrations of imaging and near-infrared optical communication further indicate the potential of this heterojunction photodetector for optoelectronic applications.<\/jats:p>","DOI":"10.1021\/acsami.6c09307","type":"journal-article","created":{"date-parts":[[2026,8,4]],"date-time":"2026-08-04T13:14:04Z","timestamp":1785849244000},"page":"42868-42878","source":"Crossref","is-referenced-by-count":1,"title":["High-Performance Self-Powered Gr\/MoS2\/WSe2 Heterojunction Photodetector Based on Asymmetric Van Der Waals Contacts"],"prefix":"10.1021","volume":"18","author":[{"given":"Hedong","family":"Yao","sequence":"first","affiliation":[{"name":"Changchun University of Science and Technology , , ,","place":["Changchun, People\u2019s Republic of China, 130022"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yinan","family":"Zhang","sequence":"additional","affiliation":[{"name":"Changchun University of Science and Technology , , ,","place":["Changchun, People\u2019s Republic of China, 130022"]},{"name":"Changchun University of Science and Technology , , ,","place":["Changchun, People\u2019s Republic of China, 130022"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5948-2767","authenticated-orcid":true,"given":"Heng","family":"Liu","sequence":"additional","affiliation":[{"name":"Changchun University of Science and Technology , , ,","place":["Changchun, People\u2019s Republic of China, 130022"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1669-1358","authenticated-orcid":true,"given":"He","family":"Zhang","sequence":"additional","affiliation":[{"name":"Changchun University of Science and Technology , , ,","place":["Changchun, People\u2019s Republic of China, 130022"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yunping","family":"Lan","sequence":"additional","affiliation":[{"name":"Changchun University of Science and Technology , , ,","place":["Changchun, People\u2019s Republic of China, 130022"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yiqiang","family":"Gao","sequence":"additional","affiliation":[{"name":"Changchun Technical University of Automobile , ,","place":["Changchun, People\u2019s Republic of China, 130013"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9346-6146","authenticated-orcid":true,"given":"Yingtian","family":"Xu","sequence":"additional","affiliation":[{"name":"Changchun University of Science and Technology , , ,","place":["Changchun, People\u2019s Republic of China, 130022"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,7,28]]},"reference":[{"issue":"12","key":"2026081200072063300_cit1","doi-asserted-by":"publisher","DOI":"10.1093\/nsr\/nwae431","article-title":"The Roadmap of Two-Dimensional Materials toward next-Generation Image Sensor","volume":"11","author":"Zhang","year":"2024","journal-title":"Natl. 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