{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T09:52:11Z","timestamp":1791366731912,"version":"4.3.1"},"reference-count":49,"publisher":"American Chemical Society (ACS)","issue":"39","license":[{"start":{"date-parts":[[2026,9,28]],"date-time":"2026-09-28T00:00:00Z","timestamp":1790553600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000266","name":"Engineering and Physical Sciences Research Council","doi-asserted-by":"publisher","award":["EP\/Z002583\/1"],"award-info":[{"award-number":["EP\/Z002583\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000781","name":"European Research Council","doi-asserted-by":"publisher","award":["101188879"],"award-info":[{"award-number":["101188879"]}],"id":[{"id":"10.13039\/501100000781","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,7]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Semiconducting InAs nanowires are promising building blocks for optoelectronics, but their performance is often complicated by an unusual negative photoconductivity (NPC) originating from surface charge traps. Harnessing the competition between this NPC and conventional positive photoconductivity (PPC) is key to unlocking novel device functionalities. Here, we systematically investigate and control the photoresponse of InAs nanowire transistors by varying the excitation wavelength, intensity, and nanowire diameter. We demonstrate precise, wavelength-controlled switching between a strong NPC, achieving a giant negative responsivity of \u223c\u20138.9 \u00d7 103 AW\u20131 under UV light, and conventional PPC in the near-infrared. To explain this competing behavior, we employ a quantitative model based on hot-carrier trapping dynamics. The model reveals that the characteristic effective trap-filling time can be tuned by over three orders of magnitude by changing the excitation wavelength from UV to near-infrared, providing a simple but powerful mechanism to control charge trapping. This work provides a predictive framework for the rational design of advanced InAs nanowire devices, including high-performance photodetectors, optical memory, and neuromorphic optoelectronics.<\/jats:p>","DOI":"10.1021\/acsami.6c10198","type":"journal-article","created":{"date-parts":[[2026,9,28]],"date-time":"2026-09-28T16:04:27Z","timestamp":1790611467000},"page":"53795-53802","source":"Crossref","is-referenced-by-count":0,"title":["Hot Carrier Trapping in InAs Nanowires for Ultraviolet to Infrared Photodetection"],"prefix":"10.1021","volume":"18","author":[{"given":"Xiaofan","family":"Lin","sequence":"first","affiliation":[{"name":"University of Cambridge , , ,","place":["Cambridge, U.K., CB3 0FA"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Faris","family":"Abualnaja","sequence":"additional","affiliation":[{"name":"University of Cambridge , , ,","place":["Cambridge, U.K., CB3 0FA"]},{"name":"King Fahd University of Petroleum and Minerals , , ,","place":["Dhahran, Saudi Arabia, 31261"]},{"name":"King Fahd University of Petroleum and Minerals , , ,","place":["Dhahran, Saudi Arabia, 31261"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Peter J.","family":"Christopher","sequence":"additional","affiliation":[{"name":"University of Nottingham , , ,","place":["Nottingham, U.K., NG7 2RD"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-8547-7048","authenticated-orcid":true,"given":"Greg","family":"Chu","sequence":"additional","affiliation":[{"name":"University of Cambridge , , ,","place":["Cambridge, U.K., CB3 0FA"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ibtisam","family":"Hammad Abbasi","sequence":"additional","affiliation":[{"name":"University of Cambridge , , ,","place":["Cambridge, U.K., CB3 0FA"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ralf","family":"Mouthaan","sequence":"additional","affiliation":[{"name":"Adelaide University , , , ,","place":["Adelaide, SA, Australia, 5005"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1528-9479","authenticated-orcid":true,"given":"Chennupati","family":"Jagadish","sequence":"additional","affiliation":[{"name":"The Australian National University , , , ,","place":["Canberra, ACT, Australia, 2600"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hark Hoe","family":"Tan","sequence":"additional","affiliation":[{"name":"The Australian National University , , , ,","place":["Canberra, ACT, Australia, 2600"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9737-680X","authenticated-orcid":true,"given":"Hannah J.","family":"Joyce","sequence":"additional","affiliation":[{"name":"University of Cambridge , , ,","place":["Cambridge, U.K., CB3 0FA"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9374-7423","authenticated-orcid":true,"given":"Jack A.","family":"Alexander-Webber","sequence":"additional","affiliation":[{"name":"University of Cambridge , , ,","place":["Cambridge, U.K., CB3 0FA"]},{"name":"Loughborough University , , ,","place":["Loughborough, U.K., LE11 3TU"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,28]]},"reference":[{"key":"2026100705064010400_cit1","doi-asserted-by":"publisher","first-page":"3492","DOI":"10.1021\/acsnano.8b09649","article-title":"Ultrasensitive Mid wavelength Infrared Photodetection Based on a Single InAs Nanowire","volume":"13","author":"Zhang","year":"2019","journal-title":"ACS Nano"},{"key":"2026100705064010400_cit2","doi-asserted-by":"publisher","first-page":"1825","DOI":"10.1021\/acsaelm.9b00368","article-title":"Light Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory","volume":"1","author":"Zhang","year":"2019","journal-title":"ACS Appl. Electron. Mater."},{"key":"2026100705064010400_cit3","doi-asserted-by":"publisher","first-page":"818","DOI":"10.1039\/C5CP06139C","article-title":"Negative photoconductivity of InAs nanowires","volume":"18","author":"Han","year":"2015","journal-title":"Phys. Chem. Chem. Phys."},{"key":"2026100705064010400_cit4","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/aadf63","article-title":"Mimicking synaptic functionality with an InAs nanowire phototransistor","volume":"29","author":"Li","year":"2018","journal-title":"Nanotechnology"},{"key":"2026100705064010400_cit5","doi-asserted-by":"publisher","first-page":"8247","DOI":"10.3390\/ma15228247","article-title":"Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor","volume":"15","author":"Shen","year":"2022","journal-title":"Materials"},{"key":"2026100705064010400_cit6","doi-asserted-by":"publisher","first-page":"10275","DOI":"10.1021\/acsanm.4c07238","article-title":"InAs Nanowire-Based Twin Electrical Sensors Enabling Simultaneous Gas Detection","volume":"8","author":"Baratto","year":"2025","journal-title":"ACS Appl. Nano Mater."},{"key":"2026100705064010400_cit7","doi-asserted-by":"publisher","first-page":"11158","DOI":"10.1021\/acs.jpclett.5c02806","article-title":"Single InAs Nanowire Hypersonic Acoustic Nanoresonator","volume":"16","author":"Colosimo","year":"2025","journal-title":"J. Phys. Chem. Lett."},{"key":"2026100705064010400_cit8","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2024.108167","article-title":"Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors","volume":"173","author":"Viscardi","year":"2024","journal-title":"Mater. Sci. Semicond. Process."},{"key":"2026100705064010400_cit9","doi-asserted-by":"publisher","first-page":"9889","DOI":"10.1021\/acs.nanolett.4c02173","article-title":"Harnessing Persistent Photocurrent in a 2D Semiconductor\u2013Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory","volume":"24","author":"Bang","year":"2024","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit10","doi-asserted-by":"publisher","DOI":"10.1088\/2634-4386\/acf684","article-title":"Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing","volume":"3","author":"Winge","year":"2023","journal-title":"Neuromorph. Comput. Eng."},{"key":"2026100705064010400_cit11","doi-asserted-by":"publisher","first-page":"21870","DOI":"10.1038\/s41598-020-78767-4","article-title":"Optoelectronic synapse using monolayer MoS2 field effect transistors","volume":"10","author":"Islam","year":"2020","journal-title":"Sci. Rep."},{"key":"2026100705064010400_cit12","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2020.148483","article-title":"Non-volatile memory behavior of interfacial InOx layer in InAs nano-wire field-effect transistor for neuromorphic application","volume":"541","author":"Lee","year":"2021","journal-title":"Appl. Surf. Sci."},{"key":"2026100705064010400_cit13","doi-asserted-by":"publisher","first-page":"18009","DOI":"10.1021\/acsnano.2c08187","article-title":"Automated Computer Vision-Enabled Manufacturing of Nanowire Devices","volume":"16","author":"Potoc\u030cnik","year":"2022","journal-title":"ACS Nano"},{"key":"2026100705064010400_cit14","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/addacb","article-title":"InAs nanowire transistor pairs as NMOS inverters","volume":"36","author":"Abbasi","year":"2025","journal-title":"Nanotechnology"},{"key":"2026100705064010400_cit15","doi-asserted-by":"publisher","first-page":"15716","DOI":"10.1021\/acs.nanolett.4c04395","article-title":"Resonance-Amplified Terahertz Near-Field Spectroscopy of a Single Nanowire","volume":"24","author":"Norman","year":"2024","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit16","doi-asserted-by":"publisher","first-page":"10033","DOI":"10.1039\/D3NR00340J","article-title":"InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection","volume":"15","author":"Li","year":"2023","journal-title":"Nanoscale"},{"key":"2026100705064010400_cit17","doi-asserted-by":"publisher","first-page":"31224","DOI":"10.1038\/srep31224","article-title":"MoS2 memristor with photoresistive switching","volume":"6","author":"Wang","year":"2016","journal-title":"Sci. Rep."},{"key":"2026100705064010400_cit18","doi-asserted-by":"publisher","first-page":"471","DOI":"10.1103\/PhysRevLett.10.471","article-title":"Fermi Level Position at Semiconductor Surfaces","volume":"10","author":"Mead","year":"1963","journal-title":"Phys. Rev. Lett."},{"key":"2026100705064010400_cit19","doi-asserted-by":"publisher","first-page":"481","DOI":"10.1021\/nl503809c","article-title":"Room Temperature Observation of Quantum Confinement in Single InAs Nanowires","volume":"15","author":"Halpern","year":"2015","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit20","doi-asserted-by":"publisher","first-page":"2419","DOI":"10.1021\/acs.chemrev.3c00656","article-title":"Electronic Transport and Quantum Phenomena in Nanowires","volume":"124","author":"Badawy","year":"2024","journal-title":"Chem. Rev."},{"key":"2026100705064010400_cit21","doi-asserted-by":"publisher","first-page":"2867","DOI":"10.1021\/acsami.6b13775","article-title":"Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire","volume":"9","author":"Han","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026100705064010400_cit22","doi-asserted-by":"publisher","first-page":"8203","DOI":"10.1002\/adma.201403664","article-title":"Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature","volume":"26","author":"Guo","year":"2014","journal-title":"Adv. Mater."},{"key":"2026100705064010400_cit23","doi-asserted-by":"publisher","first-page":"3628","DOI":"10.1021\/nn500201g","article-title":"Single InAs Nanowire Room Temperature Near Infrared Photodetectors","volume":"8","author":"Miao","year":"2014","journal-title":"ACS Nano"},{"key":"2026100705064010400_cit24","doi-asserted-by":"publisher","first-page":"6416","DOI":"10.1021\/acs.nanolett.6b02860","article-title":"Visible Light Assisted High Performance Mid Infrared Photodetectors Based on Single InAs Nanowire","volume":"16","author":"Fang","year":"2016","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit25","doi-asserted-by":"publisher","first-page":"132904","DOI":"10.1063\/1.3495776","article-title":"Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2","volume":"97","author":"Timm","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"2026100705064010400_cit26","doi-asserted-by":"publisher","first-page":"49","DOI":"10.1021\/nl071888t","article-title":"Role of Molecular Surface Passivation in Electrical Transport Properties of InAs Nanowires","volume":"8","author":"Hang","year":"2008","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit27","doi-asserted-by":"publisher","first-page":"44932","DOI":"10.1021\/acsami.8b17843","article-title":"Oxidation-Induced Changes in the ALD-Al2O3\/InAs(100) Interface and Control of the Changes for Device Processing","volume":"10","author":"Tuominen","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026100705064010400_cit28","doi-asserted-by":"publisher","first-page":"125227","DOI":"10.1063\/1.5054292","article-title":"InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition","volume":"8","author":"Troian","year":"2018","journal-title":"AIP Adv."},{"key":"2026100705064010400_cit29","doi-asserted-by":"publisher","first-page":"43993","DOI":"10.1021\/acsami.7b14415","article-title":"Engineering the Photoresponse of InAs Nanowires","volume":"9","author":"Alexander-Webber","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026100705064010400_cit30","doi-asserted-by":"publisher","first-page":"3214","DOI":"10.1021\/nl072024a","article-title":"InAs\/InP Radial Nanowire Heterostructures as High Electron Mobility Devices","volume":"7","author":"Jiang","year":"2007","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit31","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/25\/2\/024011","article-title":"Surface passivated InAs\/InP core\/shell nanowires","volume":"25","author":"van Tilburg","year":"2010","journal-title":"Semicond. Sci. Technol."},{"key":"2026100705064010400_cit32","doi-asserted-by":"publisher","first-page":"6070","DOI":"10.1021\/nl403341x","article-title":"Enhanced Luminescence Properties of InAs\u2013InAsP Core\u2013Shell Nanowires","volume":"13","author":"Treu","year":"2013","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit33","doi-asserted-by":"publisher","first-page":"357","DOI":"10.1007\/s13391-018-0041-2","article-title":"Photoresponse and Field Effect Transport Studies in InAsP\u2013InP Core\u2013Shell Nanowires","volume":"14","author":"Lee","year":"2018","journal-title":"Electron. Mater. Lett."},{"key":"2026100705064010400_cit34","doi-asserted-by":"publisher","first-page":"7545","DOI":"10.1021\/acsnano.5b02745","article-title":"Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers","volume":"9","author":"Cheung","year":"2015","journal-title":"ACS Nano"},{"key":"2026100705064010400_cit35","doi-asserted-by":"publisher","DOI":"10.1002\/admi.201701104","article-title":"Enhanced Negative Photoconductivity in InAs Nanowire Phototransistors Surface-Modified with Molecular Monolayers","volume":"5","author":"Shen","year":"2018","journal-title":"Adv. Mater. Interfaces"},{"key":"2026100705064010400_cit36","doi-asserted-by":"publisher","first-page":"360","DOI":"10.1021\/nl803154m","article-title":"Diameter-Dependent Electron Mobility of InAs Nanowires","volume":"9","author":"Ford","year":"2009","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit37","doi-asserted-by":"publisher","first-page":"77","DOI":"10.1002\/smll.200800969","article-title":"Transport Coefficients of InAs Nanowires as a Function of Diameter","volume":"5","author":"Dayeh","year":"2009","journal-title":"Small"},{"key":"2026100705064010400_cit38","doi-asserted-by":"publisher","first-page":"3378","DOI":"10.3390\/nano11123378","article-title":"Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared","volume":"11","author":"Asgari","year":"2021","journal-title":"Nanomaterials"},{"key":"2026100705064010400_cit39","doi-asserted-by":"publisher","first-page":"103","DOI":"10.1038\/s41467-023-44345-1","article-title":"Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires","volume":"15","author":"Peng","year":"2024","journal-title":"Nat. Commun."},{"key":"2026100705064010400_cit40","doi-asserted-by":"publisher","first-page":"908","DOI":"10.1021\/nl903688v","article-title":"Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters","volume":"10","author":"Joyce","year":"2010","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit41","doi-asserted-by":"publisher","first-page":"90","DOI":"10.1016\/j.microrel.2012.09.015","article-title":"Revisiting MOSFET threshold voltage extraction methods","volume":"53","author":"Ortiz-Conde","year":"2013","journal-title":"Microelectron. Reliab."},{"key":"2026100705064010400_cit42","doi-asserted-by":"publisher","DOI":"10.1063\/1.2337853","article-title":"Gate capacitance of back-gated nanowire field-effect transistors","volume":"89","author":"Wunnicke","year":"2006","journal-title":"Appl. Phys. Lett."},{"key":"2026100705064010400_cit43","doi-asserted-by":"publisher","first-page":"6413","DOI":"10.1021\/acs.jpclett.0c01879","article-title":"Surface-States-Modulated High-Performance InAs Nanowire Phototransistor","volume":"11","author":"Zhang","year":"2020","journal-title":"J. Phys. Chem. Lett."},{"key":"2026100705064010400_cit44","doi-asserted-by":"publisher","first-page":"1387","DOI":"10.1021\/acs.nanolett.7b05106","article-title":"Surface State Dynamics Dictating Transport in InAs Nanowires","volume":"18","author":"Lynall","year":"2018","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit45","doi-asserted-by":"publisher","first-page":"5875","DOI":"10.1021\/acs.nanolett.5b01962","article-title":"Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory","volume":"15","author":"Yang","year":"2015","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit46","doi-asserted-by":"publisher","DOI":"10.1063\/1.4990597","article-title":"Controllable photoresponse behavior in a single InAs nanowire phototransistor","volume":"111","author":"Li","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"2026100705064010400_cit47","doi-asserted-by":"publisher","first-page":"2778","DOI":"10.1021\/nl071330l","article-title":"Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors","volume":"7","author":"Khanal","year":"2007","journal-title":"Nano Lett."},{"key":"2026100705064010400_cit48","doi-asserted-by":"publisher","first-page":"18188","DOI":"10.1039\/C5NR03608A","article-title":"Resolving ambiguities in nanowire field effect transistor characterization","volume":"7","author":"Heedt","year":"2015","journal-title":"Nanoscale"},{"key":"2026100705064010400_cit49","doi-asserted-by":"publisher","first-page":"205","DOI":"10.1021\/acs.nanolett.5b03496","article-title":"Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire","volume":"16","author":"Hultin","year":"2015","journal-title":"Nano Lett."}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c10198","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/39\/53795\/68680518\/am-2026-10198f.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/39\/53795\/68680518\/am-2026-10198f.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T09:09:56Z","timestamp":1791364196000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/39\/53795\/5440180\/Hot-Carrier-Trapping-in-InAs-Nanowires-for"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,28]]},"references-count":49,"journal-issue":{"issue":"39","published-online":{"date-parts":[[2026,9,28]]},"published-print":{"date-parts":[[2026,10,7]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c10198","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,28]]}}}