{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T19:45:45Z","timestamp":1792784745064,"version":"4.5.0"},"reference-count":20,"publisher":"American Chemical Society (ACS)","issue":"40","license":[{"start":{"date-parts":[[2026,10,2]],"date-time":"2026-10-02T00:00:00Z","timestamp":1790899200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Science and Technology Council Taiwan, T-Star center project \u201cFuture Semiconductor Technology Research Center\u201d","award":["NSTC 114-2634-F-A49-001-"],"award-info":[{"award-number":["NSTC 114-2634-F-A49-001-"]}],"id":[{"id":"https:\/\/ror.org\/02kv4zf79","id-type":"ROR","asserted-by":"crossref"}]},{"name":"National Science and Technology Council Taiwan, T-Star center project \u201cFuture Semiconductor Technology Research Center\u201d","award":["NSTC 115-2640-E-A49-021-."],"award-info":[{"award-number":["NSTC 115-2640-E-A49-021-."]}],"id":[{"id":"https:\/\/ror.org\/02kv4zf79","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,14]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>High-pressure carbon monoxide (HiPCO) carbon nanotubes (CNTs) offer superior ION\/IOFF ratios due to their larger bandgap (EG), yet they suffer from high series resistance limiting drive currents. Here, we demonstrate a synergistic dual-engineering strategy to simultaneously minimize channel and contact resistance in top-gate HiPCO CNT field-effect transistors (FETs). A 200 \u00b0C forming gas annealing (FGA) process effectively scavenges organic residues, reducing the intrinsic channel resistance to 318 \u03a9\u00b7\u03bcm for specific 50 nm gate-length devices. Furthermore, localized p-type contact doping using contact-defined self-aligned MoOx nanoparticles deposited selectively within the source\/drain windows reduces the effective Schottky barrier height from 233 meV to 66 meV. Optimized HiPCO CNTFETs exhibit a record-high on-current density of 2.5 mA\/\u03bcm at VDS = \u20130.5 V while maintaining excellent off-state suppression. Our devices outperform existing benchmarks and exceed the IRDS 2039 conductance projections by 4\u00d7. This synergistic approach provides a robust pathway for high-performance, low-power carbon-based nanoelectronics.<\/jats:p>","DOI":"10.1021\/acsami.6c10272","type":"journal-article","created":{"date-parts":[[2026,10,2]],"date-time":"2026-10-02T23:01:31Z","timestamp":1790982091000},"page":"55286-55292","source":"Crossref","is-referenced-by-count":0,"title":["Overcoming the Resistance Penalty in Large-Bandgap Carbon Nanotube Electronics via Synergistic Interfacial Engineering"],"prefix":"10.1021","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0009-0009-9357-097X","authenticated-orcid":true,"given":"Chen-Han","family":"Chou","sequence":"first","affiliation":[{"name":"National Yang Ming Chiao Tung University , , ,","place":["Hsinchu, Taiwan, 30010"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0007-5324-7460","authenticated-orcid":true,"given":"Han-Yi","family":"Huang","sequence":"additional","affiliation":[{"name":"National Yang Ming Chiao Tung University , , ,","place":["Hsinchu, Taiwan, 30010"]},{"name":"National Center for Instrumentation Research, National Institutes of Applied Research , ,","place":["Hsinchu, Taiwan, 30076"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qing-Yu","family":"Wu","sequence":"additional","affiliation":[{"name":"National Yang Ming Chiao Tung University , , ,","place":["Hsinchu, Taiwan, 30010"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zheng-Hao","family":"Luo","sequence":"additional","affiliation":[{"name":"National Yang Ming Chiao Tung University , , ,","place":["Hsinchu, Taiwan, 30010"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yi-Wen","family":"Hsu","sequence":"additional","affiliation":[{"name":"National Yang Ming Chiao Tung University , , ,","place":["Hsinchu, Taiwan, 30010"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bo-Heng","family":"Liu","sequence":"additional","affiliation":[{"name":"National Center for Instrumentation Research, National Institutes of Applied Research , ,","place":["Hsinchu, Taiwan, 30076"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chi-Chung","family":"Kei","sequence":"additional","affiliation":[{"name":"National Center for Instrumentation Research, National Institutes of Applied Research , ,","place":["Hsinchu, Taiwan, 30076"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chao-Hsin","family":"Chien","sequence":"additional","affiliation":[{"name":"National Yang Ming Chiao Tung University , , ,","place":["Hsinchu, Taiwan, 30010"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,2]]},"reference":[{"issue":"6","key":"2026101408065987600_cit1","doi-asserted-by":"publisher","first-page":"1259","DOI":"10.1109\/TNANO.2018.2871841","article-title":"Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI","volume":"17","author":"Hills","year":"2018","journal-title":"IEEE Trans. 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Electron. Mater."},{"issue":"1","key":"2026101408065987600_cit12","doi-asserted-by":"publisher","first-page":"256","DOI":"10.1021\/acsaelm.5c01952","article-title":"Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx Nanoparticle Contact Doping","volume":"8","author":"Huang","year":"2026","journal-title":"ACS Appl. Electron. Mater."},{"issue":"3","key":"2026101408065987600_cit13","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202300519","article-title":"Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors","volume":"10","author":"Chiu","year":"2024","journal-title":"Adv. Electron. 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Sci."},{"key":"2026101408065987600_cit18","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/IEDM45741.2023.10413827","volume-title":"2023 International Electron Devices Meeting (IEDM)","author":"Li","year":"2023"},{"key":"2026101408065987600_cit19","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/IEDM50854.2024.10873592","volume-title":"2024 International Electron Devices Meeting (IEDM)","author":"Liu","year":"2024"},{"key":"2026101408065987600_cit20","doi-asserted-by":"publisher","first-page":"506","DOI":"10.1038\/s41928-023-00983-3","article-title":"Scaling aligned carbon nanotube transistors to a sub-10 nm node","volume":"6","author":"Lin","year":"2023","journal-title":"Nat. Electron."}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c10272","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/40\/55286\/68738623\/am-2026-10272x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/40\/55286\/68738623\/am-2026-10272x.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T12:29:08Z","timestamp":1791980948000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/40\/55286\/5444145\/Overcoming-the-Resistance-Penalty-in-Large-Bandgap"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,2]]},"references-count":20,"journal-issue":{"issue":"40","published-online":{"date-parts":[[2026,10,2]]},"published-print":{"date-parts":[[2026,10,14]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c10272","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,2]]}}}