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However, PdSe2-based photodetectors typically suffer from relatively high dark current and limited response speed, which hinder their practical applications in weak-light and fast near-infrared detection. In this work, a vertical PdSe2\/Cs3BiSbI9 type-I heterojunction photodetector was successfully fabricated by integrating centimeter-scale PdSe2 films grown via self-limited liquid-phase edge epitaxy with air-stable Sb-alloyed lead-free perovskite Cs3BiSbI9. Ultraviolet photoelectron spectroscopy results confirm that both the conduction band and valence band of PdSe2 are located within the bandgap of Cs3BiSbI9, forming a type-I band alignment. In this heterojunction, PdSe2 serves as the main near-infrared absorption and carrier-transport channel, while Cs3BiSbI9 provides interfacial barrier modulation and a built-in electric field induced by Fermi-level equilibration, thereby suppressing dark carrier injection and modifying interfacial carrier dynamics. Under 808 nm laser illumination, the device exhibits a responsivity of 22.2 A W\u22121, a specific detectivity of 1.64 \u00d7 1012 Jones, and a microsecond-level rise time of 52.1 \u03bcs. Moreover, the heterojunction detector also retains favorable photodetection performance under 1208 nm laser illumination. Compared with intrinsic PdSe2 and PdSe2 homojunction detectors, the PdSe2\/Cs3BiSbI9 heterojunction detector exhibits superior overall performance. These results indicate that type-I interfacial band engineering provides an effective strategy for preparing high-performance PdSe2-based near-infrared photodetectors.<\/jats:p>","DOI":"10.1021\/acsami.6c10299","type":"journal-article","created":{"date-parts":[[2026,9,14]],"date-time":"2026-09-14T12:01:34Z","timestamp":1789387294000},"page":"51149-51160","source":"Crossref","is-referenced-by-count":0,"title":["Ultrafast and Highly Responsive Near-Infrared Photodetector Based on PdSe2\/Cs3BiSbI9 Type-I Heterojunction"],"prefix":"10.1021","volume":"18","author":[{"given":"Zhengdong","family":"Qiu","sequence":"first","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, P. R. China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shihao","family":"Zheng","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, P. R. China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haodong","family":"Jiang","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, P. R. China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Can","family":"Cui","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, P. R. China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ruwen","family":"Hu","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, P. R. China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiong","family":"Tao","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, P. R. China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8606-8986","authenticated-orcid":true,"given":"Gui-Gen","family":"Wang","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, P. R. China, 518055"]},{"name":"Harbin Institute of Technology (Shenzhen) , , ,","place":["Shenzhen, P. R. China, 518055"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,14]]},"reference":[{"issue":"42","key":"2026102013062785600_cit1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202306281","article-title":"Shortwave Infrared Polarization Imaging and Monolithic Integrated Polarization Amplification Systems Based on Aligned Carbon Nanotube Arrays","volume":"33","author":"Cai","year":"2023","journal-title":"Adv. Funct. 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