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The 120-nm-thick AlN film consists of an ordered interfacial AlN region together with an upper polycrystalline overlayer. Time-domain thermoreflectance (TDTR) measurements yield an effective cross-plane thermal conductivity of 47.2 W\/m\u00b7K for the composite AlN, much higher than 2.58 W\/m\u00b7K for the silicon nitride (SiNx) reference, together with a lower interfacial thermal resistance of 10.0 m2\u00b7K\/GW compared with 29.6 m2\u00b7K\/GW for the SiNx-passivated interface. Spatially resolved vibrational electron energy-loss spectroscopy (EELS) further indicates more continuous interfacial vibrational evolution at the AlN\/nitride interface. At the device level, steady-state thermoreflectance measurements reveal that the channel-proximal peak temperature is markedly reduced under comparable power densities, accompanied by a more uniform temperature distribution in the gate-to-drain region. In addition to the thermal benefit, the composite AlN layer maintains favorable direct-current (DC) output characteristics relative to the SiNx reference device. These results show that composite crystalline AlN is an effective passivation and near-junction heat-spreading layer for GaN HEMTs.<\/jats:p>","DOI":"10.1021\/acsami.6c12341","type":"journal-article","created":{"date-parts":[[2026,9,19]],"date-time":"2026-09-19T01:03:59Z","timestamp":1789779839000},"page":"55585-55595","source":"Crossref","is-referenced-by-count":0,"title":["Composite Crystalline Aluminum Nitride Passivation for Near-Junction Thermal Management in Gallium Nitride High-Electron-Mobility Transistors"],"prefix":"10.1021","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8861-5146","authenticated-orcid":true,"given":"Kexin","family":"Deng","sequence":"first","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]},{"name":"University of Chinese Academy of Sciences , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jianbo","family":"Wang","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, China, 100871"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guanjun","family":"Jing","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]},{"name":"University of Chinese Academy of Sciences , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6592-7515","authenticated-orcid":true,"given":"Xinhua","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]},{"name":"University of Chinese Academy of Sciences , ,","place":["Beijing, China, 100049"]},{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2776-0950","authenticated-orcid":true,"given":"Jinlong","family":"Du","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, China, 100871"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5980-3161","authenticated-orcid":true,"given":"Sen","family":"Huang","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]},{"name":"University of Chinese Academy of Sciences , ,","place":["Beijing, China, 100049"]},{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2354-1822","authenticated-orcid":true,"given":"Engang","family":"Fu","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, China, 100871"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ke","family":"Wei","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6896-7531","authenticated-orcid":true,"given":"Bing","family":"Sun","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xinguo","family":"Gao","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9868-2115","authenticated-orcid":true,"given":"Peng","family":"Gao","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, China, 100871"]},{"name":"Academy for Advanced Interdisciplinary Studies, Peking University , ,","place":["Beijing, China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, China, 100871"]},{"name":"Tsientang Institute for Advanced Study , ,","place":["Zhejiang, China, 310024"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0854-8559","authenticated-orcid":true,"given":"Xinyu","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]},{"name":"University of Chinese Academy of Sciences , ,","place":["Beijing, China, 100049"]},{"name":"Institute of Microelectronics, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100029"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,18]]},"reference":[{"key":"2026101408070041400_cit1","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2019.153040","article-title":"A review of GaN HEMT broadband power amplifiers","volume":"116","author":"Husna Hamza","year":"2020","journal-title":"AEU-Int. 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