{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,29]],"date-time":"2026-10-29T18:38:12Z","timestamp":1793299092878,"version":"4.5.0"},"reference-count":45,"publisher":"American Chemical Society (ACS)","issue":"42","license":[{"start":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T00:00:00Z","timestamp":1791936000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T00:00:00Z","timestamp":1791936000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T00:00:00Z","timestamp":1791936000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100003392","name":"Natural Science Foundation of Fujian Province","doi-asserted-by":"publisher","award":["2023J05186"],"award-info":[{"award-number":["2023J05186"]}],"id":[{"id":"10.13039\/501100003392","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003392","name":"Natural Science Foundation of Fujian Province","doi-asserted-by":"publisher","award":["2024J01819"],"award-info":[{"award-number":["2024J01819"]}],"id":[{"id":"10.13039\/501100003392","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003392","name":"Natural Science Foundation of Fujian Province","doi-asserted-by":"publisher","award":["2026J010051"],"award-info":[{"award-number":["2026J010051"]}],"id":[{"id":"10.13039\/501100003392","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Min jiang Education Leading Talents Project","award":["KJ2025002"],"award-info":[{"award-number":["KJ2025002"]}]},{"name":"Education Scientific Research Key Project for Middle-age and Young Teachers of Fujian Province","award":["JZ230030"],"award-info":[{"award-number":["JZ230030"]}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["62004087"],"award-info":[{"award-number":["62004087"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["62574103"],"award-info":[{"award-number":["62574103"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,28]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Overcoming the inherent trade-offs among spectral bandwidth, sensitivity, and response speed in silicon-based photodetectors is critical for next-generation broadband optoelectronics. This work presents an ITO\/WSe2\/W\/n-Si heterojunction photodetector designed to proactively harness interface defects, diverging from conventional defect-elimination paradigms. By synergistically regulating selenium vacancies via a tungsten (W) buffer layer and rapid thermal annealing, interface defects are transformed into performance-enhancing active sites. The engineered structure exhibits a 300-fold dark current suppression and broadens the spectral response to 532\u20132200 nm, effectively overcoming the band-gap limitations of WSe2 and Si. Notably, the device achieves a responsivity of 0.95 A\/W (external quantum efficiency &amp;gt;222.4%) at 532 nm under a \u20132 V bias, while enabling self-powered optical imaging under weak illumination (0.01 mW) at 1550 nm. Furthermore, under high-frequency modulated illumination, the device exhibits a distinct bimodal transient waveform, characterized by an instantaneous spike that settles into a stable plateau. Exploiting this waveform, a waveform-encoded optical communication system is demonstrated for robust physical-layer data encryption. This study introduces an unconventional defect engineering approach and establishes a foundation for high-security optoelectronic integration.<\/jats:p>","DOI":"10.1021\/acsami.6c12641","type":"journal-article","created":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T01:01:22Z","timestamp":1792026082000},"page":"57833-57846","source":"Crossref","is-referenced-by-count":0,"title":["Defect-Engineered ITO\/WSe2\/W\/Si Heterojunction for Broadband Photodetection and Waveform-Encoded Optical Communication"],"prefix":"10.1021","volume":"18","author":[{"given":"Meihua","family":"Yang","sequence":"first","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yongkang","family":"Ge","sequence":"additional","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinhong","family":"Fang","sequence":"additional","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ziyuan","family":"Zhong","sequence":"additional","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Minxiang","family":"Huang","sequence":"additional","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinrong","family":"Zhou","sequence":"additional","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guanzhou","family":"Liu","sequence":"additional","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2723-474X","authenticated-orcid":true,"given":"Shaoying","family":"Ke","sequence":"additional","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1347-6812","authenticated-orcid":true,"given":"Zhiwei","family":"Huang","sequence":"additional","affiliation":[{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]},{"name":"Minnan Normal University , , ,","place":["Zhangzhou, China, 363000"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,14]]},"reference":[{"issue":"15","key":"2026102914072739900_cit1","doi-asserted-by":"publisher","first-page":"6977","DOI":"10.1021\/acs.chemrev.4c00763","article-title":"Intelligent photodetectors: postmanufacturing tunability toward enhanced performance and advanced functions","volume":"125","author":"Li","year":"2025","journal-title":"Chem. Rev."},{"issue":"1","key":"2026102914072739900_cit2","doi-asserted-by":"publisher","first-page":"1225","DOI":"10.1038\/s41467-024-45498-3","article-title":"Synergistic-potential engineering enables high-efficiency graphene photodetectors for near-to mid-infrared light","volume":"15","author":"Jiang","year":"2024","journal-title":"Nat. Commun."},{"issue":"13","key":"2026102914072739900_cit3","doi-asserted-by":"publisher","first-page":"12151","DOI":"10.1021\/acsnano.2c12625","article-title":"A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn\/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface","volume":"17","author":"Chen","year":"2023","journal-title":"ACS Nano"},{"issue":"1","key":"2026102914072739900_cit4","doi-asserted-by":"publisher","first-page":"4322","DOI":"10.1038\/s41467-019-12353-9","article-title":"Uprooting defects to enable high-performance III\u2013V optoelectronic devices on silicon","volume":"10","author":"Bioud","year":"2019","journal-title":"Nat. Commun."},{"key":"2026102914072739900_cit5","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.physrep.2015.10.003","article-title":"Graphene Schottky diodes: An experimental review of the rectifying graphene\/semiconductor heterojunction","volume":"606","author":"Di Bartolomeo","year":"2016","journal-title":"Phys. Rep."},{"issue":"17","key":"2026102914072739900_cit6","doi-asserted-by":"publisher","DOI":"10.1063\/5.0231243","article-title":"ReS2\/Si 2D\/3D vertical heterojunction as a self-powered photodiode","volume":"125","author":"Intonti","year":"2024","journal-title":"Appl. Phys. Lett."},{"issue":"7","key":"2026102914072739900_cit7","doi-asserted-by":"publisher","first-page":"7626","DOI":"10.1021\/acsami.8b21629","article-title":"Si\u2013MoS2 Vertical heterojunction for a photodetector with high responsivity and low noise equivalent power","volume":"11","author":"Shin","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"1","key":"2026102914072739900_cit8","doi-asserted-by":"publisher","first-page":"141","DOI":"10.1038\/s41467-023-44482-7","article-title":"Photogating-assisted tunneling boosts the responsivity and speed of heterogeneous WSe2\/Ta2NiSe5 photodetectors","volume":"15","author":"Liu","year":"2024","journal-title":"Nat. Commun."},{"issue":"23","key":"2026102914072739900_cit9","doi-asserted-by":"publisher","first-page":"9516","DOI":"10.1021\/acs.nanolett.2c03629","article-title":"Efficient avalanche photodiodes with a WSe2\/MoS2 heterostructure via two-photon absorption","volume":"22","author":"Son","year":"2022","journal-title":"Nano Lett."},{"key":"2026102914072739900_cit10","doi-asserted-by":"publisher","DOI":"10.1002\/lpor.202503198","article-title":"Dynamically hardware-level encryption based on PbSe quantum Dots-Modulated 2D heterostructure photodetector","volume":"20","author":"Shi","year":"2026","journal-title":"Laser Photonics Rev."},{"issue":"10","key":"2026102914072739900_cit11","doi-asserted-by":"publisher","first-page":"12805","DOI":"10.1021\/acsami.3c19422","article-title":"Highly sensitive broadband polarized photodetector based on the As0.6P0.4\/WSe2 heterostructure toward imaging and optical communication application","volume":"16","author":"Li","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"6","key":"2026102914072739900_cit12","doi-asserted-by":"publisher","first-page":"2246","DOI":"10.1116\/1.572901","article-title":"Sputtered W\u2013N diffusion barriers","volume":"3","author":"Kattelus","year":"1985","journal-title":"J. Vac. Sci. Technol., A"},{"issue":"5-6","key":"2026102914072739900_cit13","doi-asserted-by":"publisher","first-page":"53","DOI":"10.1016\/j.mser.2010.09.001","article-title":"Electromigration in submicron interconnect features of integrated circuits","volume":"71","author":"Ceric","year":"2011","journal-title":"Mater. Sci. Eng., R"},{"issue":"20","key":"2026102914072739900_cit14","doi-asserted-by":"publisher","DOI":"10.3390\/app122010208","article-title":"Thermal stability of sputtered tungsten nitrides for solar thermal applications","volume":"12","author":"Castaldo","year":"2022","journal-title":"Appl. Sci."},{"issue":"12","key":"2026102914072739900_cit15","doi-asserted-by":"publisher","first-page":"11279","DOI":"10.1021\/acsnano.2c11567","article-title":"Se-vacancy healing with substitutional oxygen in WSe2 for high-mobility p-type field-effect transistors","volume":"17","author":"Cho","year":"2023","journal-title":"ACS Nano"},{"issue":"11","key":"2026102914072739900_cit16","doi-asserted-by":"publisher","first-page":"699","DOI":"10.1038\/nnano.2012.193","article-title":"Electronics and optoelectronics of two-dimensional transition metal dichalcogenides","volume":"7","author":"Wang","year":"2012","journal-title":"Nat. Nanotechnol."},{"issue":"3","key":"2026102914072739900_cit17","doi-asserted-by":"publisher","first-page":"1181","DOI":"10.1021\/acsphotonics.3c01695","article-title":"High-performance Sn-based quasi-two-dimensional perovskite photodetectors by altering dark current shunt pathways","volume":"11","author":"Yang","year":"2024","journal-title":"ACS Photonics"},{"issue":"9","key":"2026102914072739900_cit18","doi-asserted-by":"publisher","first-page":"676","DOI":"10.1038\/nnano.2014.150","article-title":"Atomically thin p\u2013n junctions with van der Waals heterointerfaces","volume":"9","author":"Lee","year":"2014","journal-title":"Nat. Nanotechnol."},{"issue":"8","key":"2026102914072739900_cit19","doi-asserted-by":"publisher","first-page":"8739","DOI":"10.1021\/acsnano.8b04931","article-title":"A dual-band multilayer InSe self-powered photodetector with high performance induced by surface plasmon resonance and asymmetric Schottky junction","volume":"12","author":"Dai","year":"2018","journal-title":"ACS Nano"},{"issue":"24","key":"2026102914072739900_cit20","doi-asserted-by":"publisher","DOI":"10.1002\/lpor.202500791","article-title":"Metal-insulator-semiconductor structure-based InGaN\/GaN micro-light-emitting devices with superior external quantum Efficiency","volume":"19","author":"Yin","year":"2025","journal-title":"Laser Photonics Rev."},{"issue":"1","key":"2026102914072739900_cit21","doi-asserted-by":"publisher","first-page":"62","DOI":"10.1021\/acsphotonics.4c01057","article-title":"Fast and efficient sub-band gap photodetection in Al: ZnO\/Si heterojunction by enhanced photoexcited hole transport via interfacial defect states","volume":"12","author":"Kim","year":"2024","journal-title":"ACS Photonics"},{"issue":"7","key":"2026102914072739900_cit22","doi-asserted-by":"publisher","first-page":"3667","DOI":"10.1109\/TED.2025.3569784","article-title":"532-2200 nm Si schottky photodetectors featuring nonuniform barrier layers","volume":"72","author":"Ge","year":"2025","journal-title":"IEEE Trans. Electron Devices"},{"issue":"2","key":"2026102914072739900_cit23","doi-asserted-by":"publisher","first-page":"022501","DOI":"10.1088\/2632-959X\/ade460","article-title":"Metal-semiconductor Schottky diode with Landauer\u2019s formalism","volume":"6","author":"Di Bartolomeo","year":"2025","journal-title":"Nano Express"},{"issue":"8","key":"2026102914072739900_cit24","doi-asserted-by":"publisher","first-page":"4785","DOI":"10.1021\/nl501962c","article-title":"Photovoltaic effect in an electrically tunable van der Waals heterojunction","volume":"14","author":"Furchi","year":"2014","journal-title":"Nano Lett."},{"issue":"25","key":"2026102914072739900_cit25","doi-asserted-by":"publisher","first-page":"7716","DOI":"10.1021\/acs.nanolett.4c01745","article-title":"Self-rolled-up WSe2 one-dimensional\/two-dimensional homojunctions: enabling high-performance self-powered polarization-sensitive photodetectors","volume":"24","author":"Zhang","year":"2024","journal-title":"Nano Lett."},{"key":"2026102914072739900_cit26","doi-asserted-by":"publisher","DOI":"10.1016\/j.optmat.2022.112479","article-title":"Impact of pauli-blocking effect on optical limiting properties of WSe2 thin films","volume":"129","author":"Surbhi","year":"2022","journal-title":"Opt. Mater."},{"key":"2026102914072739900_cit27","doi-asserted-by":"publisher","DOI":"10.1016\/j.jpcs.2025.112775","article-title":"Oxidation and defects in WS2 and WSe2: The first-principle analysis of their monolayer and bulk structures","volume":"204","author":"Ahmed","year":"2025","journal-title":"J. Phys. Chem. Solids"},{"issue":"1","key":"2026102914072739900_cit28","doi-asserted-by":"publisher","first-page":"192","DOI":"10.1186\/s11671-019-3002-2","article-title":"Electronic and magnetic properties of defected monolayer WSe2 with vacancies","volume":"14","author":"Yang","year":"2019","journal-title":"Nanoscale Res. Lett."},{"issue":"23","key":"2026102914072739900_cit29","doi-asserted-by":"publisher","DOI":"10.1002\/admi.202300277","article-title":"First-principle study of bandgap engineering and optical properties of monolayer WSe2 in second near-infrared windows","volume":"10","author":"Zhao","year":"2023","journal-title":"Adv. Mater. Interfaces"},{"issue":"7","key":"2026102914072739900_cit30","doi-asserted-by":"publisher","first-page":"6853","DOI":"10.1021\/acsnano.6b02521","article-title":"Air-stable n-doping of WSe2 by anion vacancy formation with mild plasma treatment","volume":"10","author":"Tosun","year":"2016","journal-title":"ACS Nano"},{"issue":"40","key":"2026102914072739900_cit31","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202507077","article-title":"In situ selenization engineered dual schottky heterojunctions: A novel architecture for high-speed broadband photonic communication detector Arrays","volume":"21","author":"Ke","year":"2025","journal-title":"Small"},{"issue":"7","key":"2026102914072739900_cit32","doi-asserted-by":"publisher","DOI":"10.1002\/lpor.202501328","article-title":"Enhanced performance of giant power exponent superlinear photodetectors based on ZnS\/MgS core\u2013shell quantum dots","volume":"20","author":"Yu","year":"2026","journal-title":"Laser Photonics Rev."},{"issue":"20","key":"2026102914072739900_cit33","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202300413","article-title":"Giant superlinear power dependence of photocurrent based on layered Ta2NiS5 photodetector","volume":"10","author":"Meng","year":"2023","journal-title":"Adv. Sci."},{"key":"2026102914072739900_cit34","doi-asserted-by":"publisher","DOI":"10.1109\/JLT.2025.3594485","article-title":"300-2200 nm broadband Si schottky photodetectors with ultra-low dark current (&lt;10 nA\/cm2) via Al2O3\/SiOx interface engineering","author":"Ge","year":"2025","journal-title":"J. Lightwave Technol."},{"key":"2026102914072739900_cit35","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfin.2026.109535","article-title":"Nearly 4 in. single-oriented WSe2 films on Si via in situ selenization for self-powered, ultrabroadband photodetection","volume":"94","author":"Yang","year":"2026","journal-title":"Surf. Interfaces"},{"issue":"1","key":"2026102914072739900_cit36","doi-asserted-by":"publisher","first-page":"7034","DOI":"10.1038\/s41467-021-27195-7","article-title":"High-specific-power flexible transition metal dichalcogenide solar cells","volume":"12","author":"Nassiri Nazif","year":"2021","journal-title":"Nat. Commun."},{"issue":"6","key":"2026102914072739900_cit37","doi-asserted-by":"publisher","first-page":"2999","DOI":"10.1021\/nn901674p","article-title":"Direct fabrication of zero-and one-dimensional metal nanocrystals by thermally assisted electromigration","volume":"4","author":"Yuk","year":"2010","journal-title":"ACS Nano"},{"issue":"4","key":"2026102914072739900_cit38","doi-asserted-by":"publisher","first-page":"420","DOI":"10.3390\/en10040420","article-title":"Improved separation and collection of charge carriers in micro-pyramidal-structured silicon\/PEDOT: PSS hybrid solar cells","volume":"10","author":"Sugano","year":"2017","journal-title":"Energies"},{"issue":"20","key":"2026102914072739900_cit39","doi-asserted-by":"publisher","first-page":"29722","DOI":"10.1016\/j.ceramint.2022.06.231","article-title":"In-situ prepared WSe2\/Si 2D-3D vertical heterojunction for high performance self-driven photodetector","volume":"48","author":"Zhang","year":"2022","journal-title":"Ceram. Int."},{"issue":"12","key":"2026102914072739900_cit40","doi-asserted-by":"publisher","first-page":"6975","DOI":"10.1021\/acsphotonics.5c02275","article-title":"A Self-powered WSe2\/Si vdW heterojunction photodiode with high carrier collection efficiency for noninvasive multimodal biosensing applications","volume":"12","author":"Zhao","year":"2025","journal-title":"ACS Photonics"},{"issue":"5","key":"2026102914072739900_cit41","doi-asserted-by":"publisher","first-page":"2070","DOI":"10.1021\/acsphotonics.4c00246","article-title":"Mixed-dimensional PtSe2\/Bi2Te3\/pyramid Si heterojunction with a light-trapping structure for highly sensitive ultrabroadband photodetection","volume":"11","author":"Li","year":"2024","journal-title":"ACS Photonics"},{"issue":"6","key":"2026102914072739900_cit42","doi-asserted-by":"publisher","first-page":"8012","DOI":"10.1021\/acsanm.2c01109","article-title":"Highly sensitive photodetector based on the n-Si\/p-GaSe vertical heterojunction","volume":"5","author":"Wu","year":"2022","journal-title":"ACS Appl. Nano Mater."},{"issue":"13","key":"2026102914072739900_cit43","doi-asserted-by":"publisher","first-page":"5936","DOI":"10.1021\/acsaelm.5c00587","article-title":"Investigation on the preparation and performance of InSe nanosheets\/Si heterojunction photodetectors","volume":"7","author":"Liu","year":"2025","journal-title":"ACS Appl. Electron. Mater."},{"issue":"22","key":"2026102914072739900_cit44","doi-asserted-by":"publisher","first-page":"38136","DOI":"10.1364\/OE.539148","article-title":"Broadband self-powered MoS2\/PdSe2\/WSe2 PSN heterojunction photodetector for high-performance optical imaging and communication","volume":"32","author":"Zhang","year":"2024","journal-title":"Opt. Express"},{"issue":"3","key":"2026102914072739900_cit45","doi-asserted-by":"publisher","first-page":"675","DOI":"10.1039\/D2NA00552B","article-title":"Integration of photovoltaic and photogating effects in a WSe2\/WS2\/p-Si dual junction photodetector featuring high-sensitivity and fast-response","volume":"5","author":"Huang","year":"2023","journal-title":"Nanoscale Adv."}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c12641","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/42\/57833\/68865907\/am-2026-126413.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/42\/57833\/68865907\/am-2026-126413.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,29]],"date-time":"2026-10-29T18:29:39Z","timestamp":1793298579000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/42\/57833\/5451543\/Defect-Engineered-ITO-WSe2-W-Si-Heterojunction-for"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,14]]},"references-count":45,"journal-issue":{"issue":"42","published-online":{"date-parts":[[2026,10,14]]},"published-print":{"date-parts":[[2026,10,28]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c12641","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,14]]}}}