{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,12]],"date-time":"2026-08-12T08:36:44Z","timestamp":1786523804036,"version":"build-2736575974"},"reference-count":50,"publisher":"American Chemical Society (ACS)","issue":"31","license":[{"start":{"date-parts":[[2026,7,31]],"date-time":"2026-07-31T00:00:00Z","timestamp":1785456000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,7,31]],"date-time":"2026-07-31T00:00:00Z","timestamp":1785456000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,7,31]],"date-time":"2026-07-31T00:00:00Z","timestamp":1785456000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100002613","name":"Ulsan National Institute of Science and Technology","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100002613","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100018058","name":"SK Hynix","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100018058","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,8,12]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Self-assembled monolayers (SAMs) consist of long alkyl chains of large molecular size and low volatility, which require conventional solution-based processes that are incompatible with bottomless barrier structures, especially for sub-10 nm 3D semiconductor fabrication, leading to nonuniform inhibition and poor selectivity. Here, we introduce a bottomless barrier architecture strategy that selectively deposits barrier material on the SiO2 via-sidewall surfaces using area-selective atomic layer deposition (AS-ALD), while leaving the Cu bottom surface exposed. A phenylethyl mercaptan (PEM) small-molecule inhibitor (SMI) is employed as a Cu-selective passivating agent, exploiting strong Cu\u2013S chemisorption and \u03c0\u2013\u03c0 stacking interactions to form a densely packed inhibition layer on Cu surfaces, thereby directing ZnO ALD exclusively onto the SiO2 sidewalls with superior selectivity compared to bulkier SAM-based approaches. ZnO is decided as the barrier material due to its low-temperature ALD capability (&amp;lt;150 \u00b0C), strong interfacial adhesion with Si-based dielectric, and effective suppression of Cu diffusion. The PEM inhibitor exhibited sufficient vapor pressure for a stable vapor-phase ALD-ZnO process that selectively adsorbs approximately 90% during a 50-cycle ZnO film with a thickness of about 9.1 nm. Notably, both H2 molecular and H2 plasma treatments are found to be efficient in removing PEM inhibitor from Cu surfaces before Ru deposition. ALD-Ru is subsequently deposited controllably as a low-resistivity (\u223c23 \u03bc\u03a9\u00b7cm) liner and seed layer with a thickness of \u223c15 nm, further maintaining a low resistivity of \u223c38.1 \u03bc\u03a9\u00b7cm even at a thickness of \u223c6 nm, as well as nearly 100% step coverage in dual-trench structures with an aspect ratio of \u223c6.3. The resulting Ru\/ZnO bilayer on SiO2 sidewalls and the Ru layer on the Cu bottom surface could be incorporated into dual-damascene patterns prior to Cu filling for modern-day interconnects.<\/jats:p>","DOI":"10.1021\/acsami.6c12802","type":"journal-article","created":{"date-parts":[[2026,8,4]],"date-time":"2026-08-04T14:02:53Z","timestamp":1785852173000},"page":"43494-43503","source":"Crossref","is-referenced-by-count":0,"title":["Bottomless Barrier Strategy for Next-Generation Cu Interconnects Using Phenylethyl Mercaptan-Assisted Area-Selective ALD for Scalable Ru\/ZnO Bilayer Integration"],"prefix":"10.1021","volume":"18","author":[{"given":"Minwoo","family":"Kim","sequence":"first","affiliation":[{"name":"Ulsan National Institute of Science and Technology (UNIST) , , ,","place":["Ulju-gun, Ulsan, Republic of Korea, 44919"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3272-0489","authenticated-orcid":true,"given":"Debananda","family":"Mohapatra","sequence":"additional","affiliation":[{"name":"Ulsan National Institute of Science and Technology (UNIST) , , ,","place":["Ulju-gun, Ulsan, Republic of Korea, 44919"]},{"name":"Ulsan National Institute of Science and Technology (UNIST) , , ,","place":["Ulju-gun, Ulsan, Republic of Korea, 44919"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sang Bok","family":"Kim","sequence":"additional","affiliation":[{"name":"Ulsan National Institute of Science and Technology (UNIST) , , ,","place":["Ulju-gun, Ulsan, Republic of Korea, 44919"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yeseul","family":"Son","sequence":"additional","affiliation":[{"name":"Ulsan National Institute of Science and Technology (UNIST) , , ,","place":["Ulju-gun, Ulsan, Republic of Korea, 44919"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jeongha","family":"Kim","sequence":"additional","affiliation":[{"name":"Ulsan National Institute of Science and Technology (UNIST) , , ,","place":["Ulju-gun, Ulsan, Republic of Korea, 44919"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3748-2755","authenticated-orcid":true,"given":"Soo-Hyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Ulsan National Institute of Science and Technology (UNIST) , , ,","place":["Ulju-gun, Ulsan, Republic of Korea, 44919"]},{"name":"Ulsan National Institute of Science and Technology (UNIST) , , ,","place":["Ulju-gun, Ulsan, Republic of Korea, 44919"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,7,31]]},"reference":[{"issue":"11-12","key":"2026081200090051300_cit1","doi-asserted-by":"publisher","first-page":"2200","DOI":"10.1016\/j.mee.2006.10.003","article-title":"A global view of interconnects","volume":"83","author":"List","year":"2006","journal-title":"Microelectron. 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