{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,16]],"date-time":"2026-09-16T09:06:58Z","timestamp":1789549618898,"version":"build-2803163510"},"reference-count":54,"publisher":"American Chemical Society (ACS)","issue":"35","license":[{"start":{"date-parts":[[2026,8,31]],"date-time":"2026-08-31T00:00:00Z","timestamp":1788134400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,31]],"date-time":"2026-08-31T00:00:00Z","timestamp":1788134400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,31]],"date-time":"2026-08-31T00:00:00Z","timestamp":1788134400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,9]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>The rapid evolution of high-frequency communication, heterogeneous integration, and high-power-density packaging technologies has imposed increasingly stringent requirements for low-loss signal transmission and efficient heat dissipation on polymer-based packaging substrates. Herein, a BN interfacial engineering strategy combining sucrose-assisted mechanochemical activation with silane coupling was developed, and the resulting functionalized BN (f-BN) and SiO2 were incorporated as hybrid fillers into glass fiber fabric-reinforced bismaleimide-triazine (BT) resin composites. The results reveal that sucrose-assisted ball milling generated a hydroxyl-rich active layer on the BN surface, enabling the subsequent grafting of phenylamino silane and thereby improving the dispersion and interfacial bonding of f-BN within the composites. With the partial replacement of SiO2 by thermally conductive f-BN, the f-BN45 composite achieved an extremely low dielectric loss (Df) of 0.003 at 10 GHz and a through-plane thermal conductivity of 1.53 W m\u20131 K\u20131, which was 86.9% higher than that of the composite filled only with SiO2. In addition to its low Df and enhanced heat-conduction capability, f-BN45 also exhibited improved dimensional stability of the composites, as reflected by an X-axis CTE of 7.2 ppm\/\u00b0C, while maintaining stable dielectric performance over a wide temperature range. Practical power device heat-dissipation evaluation and finite element simulations further confirmed the advantage of f-BN45 in chip thermal management. This work highlights sucrose-assisted surface activation combined with silane coupling as an effective route to tailoring the BN\/resin interface, offering a feasible paradigm for high-performance BT-based composites in high-frequency electronic packaging and thermal management applications.<\/jats:p>","DOI":"10.1021\/acsami.6c13616","type":"journal-article","created":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T01:33:41Z","timestamp":1788399221000},"page":"48273-48285","source":"Crossref","is-referenced-by-count":0,"title":["Sucrose-Assisted Interface Engineering of Boron Nitride for BT-Based High-Frequency Electronic Packaging Substrates with Low Dielectric Loss and Enhanced Thermal Conductivity"],"prefix":"10.1021","volume":"18","author":[{"given":"Hao","family":"Wang","sequence":"first","affiliation":[{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]},{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuxin","family":"He","sequence":"additional","affiliation":[{"name":"City University of Hong Kong (Dongguan) , ,","place":["Dongguan, China, 523808"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kang","family":"Luo","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]},{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Enzhu","family":"Li","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]},{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3851-2330","authenticated-orcid":true,"given":"Bin","family":"Tang","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]},{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0237-6867","authenticated-orcid":true,"given":"Ying","family":"Yuan","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]},{"name":"University of Electronic Science and Technology of China , , ,","place":["Chengdu, China, 610054"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,31]]},"reference":[{"key":"2026091604070126900_cit1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202523628","article-title":"Robust Flexible Microwave Dielectric Film with High Thermal Conductivity and Ultralow Loss","volume":"36","author":"Lu","year":"2026","journal-title":"Adv. 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