{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T08:59:19Z","timestamp":1790758759533,"version":"4.1.0"},"reference-count":48,"publisher":"American Chemical Society (ACS)","issue":"38","license":[{"start":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T00:00:00Z","timestamp":1789948800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T00:00:00Z","timestamp":1789948800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T00:00:00Z","timestamp":1789948800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2025-02217649"],"award-info":[{"award-number":["RS-2025-02217649"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,30]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Selector-only memory (SOM) integrates memory and selector functions within a single volatile threshold-switching layer, offering a compact architecture for high-density cross-point arrays. However, its practical performance depends strongly on the introduction and distribution of trap states in the chalcogenide network. Conventional SOM materials often rely on As- or Te-containing chalcogenides to achieve effective trap-state engineering, but their toxicity, limited stability, and integration challenges motivate the development of safer alternatives. Here, we report Sb-doped Ge2Se3 (Sb(x):GS, where x denotes the Sb atomic fraction) as an As-\/Te-free SOM material and investigate the effects of Sb-induced trap-state modulation on low-energy and reliable operation. Pure Ge2Se3 (GS) offers a robust Ge\u2013Se network but insufficient effective trap states for energy-efficient SOM operation; thus, Sb was incorporated to tune the trap distribution and enhance SOM performance. The optimized Sb(0.16):GS device exhibits polarity-dependent threshold voltage (Vth) states of Vth1 \u2248 2.1 V and Vth2 \u2248 4.5 V, corresponding to a large memory window (MW) of approximately 2.4 V, while maintaining a low off-state current of \u223c5 nA. Compared to pure GS, Sb(0.16):GS reaches a saturated MW at approximately 33% lower write energy under identical programming conditions and exhibits reliable state separation during repeated switching and drift evaluation. X-ray photoelectron spectroscopy, Raman spectroscopy, optical absorption analysis, and temperature-dependent transport measurements indicate that moderate Sb incorporation preserves the Ge\u2013Se network while introducing Sb\u2013Se-associated trap states that increase the separation between the trap depth and activation energy of the two programmed states. In contrast, excessive Sb incorporation promotes Sb-rich homopolar bonding and broadens the trap distribution, degrading switching performance. The findings provide practical design guidelines for engineering trap states in chalcogenide selectors and advance the development of energy-efficient, reliable, and high-density SOM technologies.<\/jats:p>","DOI":"10.1021\/acsami.6c13623","type":"journal-article","created":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T13:02:53Z","timestamp":1789995773000},"page":"52600-52610","source":"Crossref","is-referenced-by-count":0,"title":["Reliable Low-Energy Selector-Only Memory Operation via Sb-Induced Trap-State Modulation in As-\/Te-Free Ge2Se3"],"prefix":"10.1021","volume":"18","author":[{"given":"Siwoo","family":"Kim","sequence":"first","affiliation":[{"name":"Korea University , , Anam-ro 145, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hansang","family":"Sung","sequence":"additional","affiliation":[{"name":"Korea University , , Anam-ro 145, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chanwoong","family":"Park","sequence":"additional","affiliation":[{"name":"Korea University , , Anam-ro 145, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seongwoo","family":"Park","sequence":"additional","affiliation":[{"name":"Korea University , , Anam-ro 145, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sangho","family":"Kang","sequence":"additional","affiliation":[{"name":"Korea University , , Anam-ro 145, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Deokhwan","family":"Lee","sequence":"additional","affiliation":[{"name":"Korea University , , Anam-ro 145, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyeonseong","family":"Yun","sequence":"additional","affiliation":[{"name":"Korea University , , Anam-ro 145, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6635-1880","authenticated-orcid":true,"given":"Heon","family":"Lee","sequence":"additional","affiliation":[{"name":"Korea University , , Anam-ro 145, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02841"]},{"name":"ZERC , 620, New Engineering Building, 73-15, Anam-ro, Seongbuk-gu , ,","place":["Seoul, Republic of Korea, 02855"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,21]]},"reference":[{"issue":"4","key":"2026093002073320200_cit1","doi-asserted-by":"publisher","first-page":"246","DOI":"10.1038\/s41928-018-0054-8","article-title":"Mixed-Precision In-Memory Computing","volume":"1","author":"Le Gallo","year":"2018","journal-title":"Nat. Electron."},{"issue":"7708","key":"2026093002073320200_cit2","doi-asserted-by":"publisher","first-page":"60","DOI":"10.1038\/s41586-018-0180-5","article-title":"Equivalent-Accuracy Accelerated Neural-Network Training Using Analogue Memory","volume":"558","author":"Ambrogio","year":"2018","journal-title":"Nature"},{"issue":"7","key":"2026093002073320200_cit3","doi-asserted-by":"publisher","first-page":"529","DOI":"10.1038\/s41565-020-0655-z","article-title":"Memory Devices and Applications for In-Memory Computing","volume":"15","author":"Sebastian","year":"2020","journal-title":"Nat. Nanotechnol."},{"issue":"3","key":"2026093002073320200_cit4","doi-asserted-by":"publisher","first-page":"173","DOI":"10.1038\/s41578-019-0159-3","article-title":"Resistive Switching Materials for Information Processing","volume":"5","author":"Wang","year":"2020","journal-title":"Nat. Rev. Mater."},{"issue":"5","key":"2026093002073320200_cit5","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202400665","article-title":"Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond","volume":"11","author":"Ban","year":"2025","journal-title":"Adv. Electron. Mater."},{"issue":"9","key":"2026093002073320200_cit6","doi-asserted-by":"publisher","first-page":"2135","DOI":"10.1109\/TC.2021.3121543","article-title":"Design Guidelines of Storage Class Memory\/Flash Hybrid Solid-State Drive Considering System Architecture, Algorithm and Workload Characteristic","volume":"71","author":"Sun","year":"2022","journal-title":"IEEE Trans. Comput."},{"issue":"8","key":"2026093002073320200_cit7","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202400790","article-title":"Understanding the Effects of Ta Doping in Sb2Te3 for High-Performance Phase Change Memory","volume":"11","author":"Sung","year":"2025","journal-title":"Adv. Electron. Mater."},{"issue":"5","key":"2026093002073320200_cit8","doi-asserted-by":"publisher","first-page":"3351","DOI":"10.1109\/TED.2024.3378221","article-title":"Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device","volume":"71","author":"Lee","year":"2024","journal-title":"IEEE Trans. Electron Dev."},{"issue":"11","key":"2026093002073320200_cit9","doi-asserted-by":"publisher","first-page":"824","DOI":"10.1038\/nmat2009","article-title":"Phase-Change Materials for Rewriteable Data Storage","volume":"6","author":"Wuttig","year":"2007","journal-title":"Nat. Mater."},{"issue":"2","key":"2026093002073320200_cit10","doi-asserted-by":"publisher","first-page":"48","DOI":"10.1109\/MM.2023.3237491","article-title":"Memory Pooling with CXL","volume":"43","author":"Gouk","year":"2023","journal-title":"IEEE Micro"},{"issue":"11","key":"2026093002073320200_cit11","doi-asserted-by":"publisher","first-page":"288","DOI":"10.1145\/3669900","article-title":"An Introduction to the Compute Express Link (CXL) Interconnect","volume":"56","author":"Sharma","year":"2024","journal-title":"ACM Comput. Surv."},{"issue":"6","key":"2026093002073320200_cit12","doi-asserted-by":"publisher","first-page":"333","DOI":"10.1038\/s41928-018-0092-2","article-title":"In-Memory Computing with Resistive Switching Devices","volume":"1","author":"Ielmini","year":"2018","journal-title":"Nat. Electron."},{"issue":"1","key":"2026093002073320200_cit13","doi-asserted-by":"publisher","first-page":"44","DOI":"10.1007\/s40820-023-01289-x","article-title":"Chalcogenide Ovonic Threshold Switching Selector","volume":"16","author":"Zhao","year":"2024","journal-title":"Nano-Micro Lett."},{"issue":"3","key":"2026093002073320200_cit14","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.78.035308","article-title":"Threshold Switching Mechanism by High-Field Energy Gain in the Hopping Transport of Chalcogenide Glasses","volume":"78","author":"Ielmini","year":"2008","journal-title":"Phys. Rev. B"},{"issue":"44","key":"2026093002073320200_cit15","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202408028","article-title":"Microscopic Origin of Polarity-Dependent VTH Shift in Amorphous Chalcogenides for 3D Self-Selecting Memory","volume":"11","author":"Sung","year":"2024","journal-title":"Adv. Sci."},{"key":"2026093002073320200_cit16","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.70529","article-title":"Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1\u2013x-Based Selector-Only Memory","author":"Nguyen","year":"2026","journal-title":"Adv. Electron. Mater."},{"issue":"18","key":"2026093002073320200_cit17","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aay2830","article-title":"Toward Ultimate Nonvolatile Resistive Memories: The Mechanism behind Ovonic Threshold Switching Revealed","volume":"6","author":"No\u00e9","year":"2020","journal-title":"Sci. Adv."},{"key":"2026093002073320200_cit18","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/IRPS46558.2021.9405114","article-title":"Modeling and Spectroscopy of Ovonic Threshold Switching Defects","author":"Degraeve","year":"2021","journal-title":"IEEE Int. Reliab. Phys. Symp. (IRPS)"},{"key":"2026093002073320200_cit19","doi-asserted-by":"publisher","first-page":"175","DOI":"10.1016\/j.jmst.2025.06.023","article-title":"GeSSeTe-Based Selector-Only-Memory via Unipolar Operation","volume":"250","author":"Song","year":"2026","journal-title":"J. Mater. Sci. Technol."},{"issue":"9","key":"2026093002073320200_cit20","doi-asserted-by":"publisher","first-page":"5373","DOI":"10.1021\/acsanm.9b00734","article-title":"Increasing Trapped Carrier Density in Nanoscale GeSeAs Films by As Ion Implantation for Selector Devices in 3D-Stacking Memory","volume":"2","author":"Liu","year":"2019","journal-title":"ACS Appl. Nano Mater."},{"key":"2026093002073320200_cit21","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2025.181079","article-title":"In-Doped GeSbSeTe Thin Films for Increased Memory Window of Selector-Only-Memory Devices","volume":"1031","author":"Jeong","year":"2025","journal-title":"J. Alloys Compd."},{"key":"2026093002073320200_cit22","doi-asserted-by":"publisher","first-page":"193","DOI":"10.1016\/j.jmst.2025.09.005","article-title":"Improved Reliability of Si-Doped GeS-Based Selector-Only Memory via Homopolar Bond Suppression and Enhanced Memory Window","volume":"256","author":"Joo","year":"2026","journal-title":"J. Mater. Sci. Technol."},{"issue":"1","key":"2026093002073320200_cit23","doi-asserted-by":"publisher","first-page":"8103","DOI":"10.1038\/s41598-017-08251-z","article-title":"Te-Based Chalcogenide Materials for Selector Applications","volume":"7","author":"Velea","year":"2017","journal-title":"Sci. Rep."},{"issue":"1","key":"2026093002073320200_cit24","doi-asserted-by":"publisher","first-page":"86","DOI":"10.1038\/s41524-023-01043-2","article-title":"In Silico Screening for As\/Se-Free Ovonic Threshold Switching Materials","volume":"9","author":"Clima","year":"2023","journal-title":"npj Comput. Mater."},{"key":"2026093002073320200_cit25","doi-asserted-by":"publisher","first-page":"28.5.1","DOI":"10.1109\/IEDM19574.2021.9720628","volume-title":"Low Variability High Endurance and Low Voltage Arsenic-Free Selectors Based on GeCTe","author":"Ambrosi","year":"2021"},{"issue":"10","key":"2026093002073320200_cit26","doi-asserted-by":"publisher","first-page":"5148","DOI":"10.1039\/D6MH00158K","article-title":"A Tellurium-Free GeSbSe Thin Film for Reliable Selector-Only Memory Operation","volume":"13","author":"Oh","year":"2026","journal-title":"Mater. Horiz."},{"key":"2026093002073320200_cit27","doi-asserted-by":"publisher","DOI":"10.1016\/j.apmt.2026.103342","article-title":"The Role of Chemical Bonds in Polarity-Dependent Threshold Switching of Chalcogenide Glass","volume":"51","author":"Yuan","year":"2026","journal-title":"Appl. Mater. Today"},{"issue":"10","key":"2026093002073320200_cit28","doi-asserted-by":"publisher","first-page":"Q75","DOI":"10.1149\/2.001310ssl","article-title":"Effect of Ge Concentration in GexSe1\u2013x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices","volume":"2","author":"Kim","year":"2013","journal-title":"ECS Solid State Lett."},{"issue":"8","key":"2026093002073320200_cit29","doi-asserted-by":"publisher","DOI":"10.1063\/5.0059845","article-title":"Structural Features of Chalcogenide Glass SiTe: An Ovonic Threshold Switching Material","volume":"9","author":"Gu","year":"2021","journal-title":"APL Mater."},{"key":"2026093002073320200_cit30","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2021.138837","article-title":"Extended Endurance Performance and Reduced Threshold Voltage by Doping Si in GeSe-Based Ovonic Threshold Switching Selectors","volume":"734","author":"Li","year":"2021","journal-title":"Thin Solid Films"},{"issue":"50","key":"2026093002073320200_cit31","doi-asserted-by":"publisher","first-page":"68123","DOI":"10.1021\/acsami.5c17898","article-title":"Effect of Indium Doping on the Reliability Characteristics of Chalcogenide GeSbSeTe Thin-Film-Based Selector-Only Memory Devices","volume":"17","author":"Jeong","year":"2025","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"48","key":"2026093002073320200_cit32","doi-asserted-by":"publisher","DOI":"10.1002\/advs.75989","article-title":"Reconfigurable Selector-Only Memory (SOM) for Scalable Neuromorphic Computing","volume":"13","author":"Wen","year":"2026","journal-title":"Adv. Sci."},{"key":"2026093002073320200_cit33","doi-asserted-by":"publisher","first-page":"33","DOI":"10.1007\/s40820-020-00557-4","article-title":"Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics","volume":"13","author":"Xue","year":"2021","journal-title":"Nano-Micro Lett."},{"issue":"3","key":"2026093002073320200_cit34","doi-asserted-by":"publisher","first-page":"1453","DOI":"10.1021\/acsanm.5c04524","article-title":"Nanometer-Thick Films of Ta-Doped Sb2Te3\/TiTe2 Superlattice-Like Nanostructures for Phase-Change Memory Data Storage","volume":"9","author":"Sung","year":"2026","journal-title":"ACS Appl. Nano Mater."},{"key":"2026093002073320200_cit35","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/IEDM50572.2025.11353804","volume-title":"Hybrid-Stacked Sb-Based Selector-Only Memory with Large Memory Window (&gt;1.3 V) and Excellent Endurance (&gt;1010) via Decoupled Memory and Selector Functions","author":"Lee","year":"2025"},{"key":"2026093002073320200_cit36","doi-asserted-by":"publisher","DOI":"10.1016\/j.scriptamat.2022.114834","article-title":"How Arsenic Makes Amorphous GeSe a Robust Chalcogenide Glass for Advanced Memory Integration","volume":"218","author":"Gu","year":"2022","journal-title":"Scr. Mater."},{"issue":"1","key":"2026093002073320200_cit37","doi-asserted-by":"publisher","first-page":"44","DOI":"10.1109\/LED.2023.3336227","article-title":"Boron Doping: Unlocking Arsenic-Mimicking Performance in GeSe-Based OTS Selectors","volume":"45","author":"Chen","year":"2024","journal-title":"IEEE Electron Device Lett."},{"issue":"1","key":"2026093002073320200_cit38","doi-asserted-by":"publisher","DOI":"10.1038\/srep07099","article-title":"The Effect of Doping Sb on the Electronic Structure and the Device Characteristics of Ovonic Threshold Switches Based on Ge-Se","volume":"4","author":"Shin","year":"2014","journal-title":"Sci. Rep."},{"key":"2026093002073320200_cit39","doi-asserted-by":"publisher","DOI":"10.1155\/2018\/7158079","article-title":"Investigation of the Atomic Structure of Ge-Sb-Se Chalcogenide Glasses","volume":"2018","author":"Fabian","year":"2018","journal-title":"Adv. Condens. Matter Phys."},{"key":"2026093002073320200_cit40","doi-asserted-by":"publisher","DOI":"10.1016\/j.jphotochem.2023.115266","article-title":"Dense\/Nanoporous Bilayer BiVO4 Photoanode with Outstanding Light-Absorption Efficiency for High-Performance Photoelectrochemical Water Splitting","volume":"449","author":"Sung","year":"2024","journal-title":"J. Photochem. Photobiol., A"},{"issue":"2","key":"2026093002073320200_cit41","doi-asserted-by":"publisher","first-page":"627","DOI":"10.1002\/pssb.19660150224","article-title":"Optical Properties and Electronic Structure of Amorphous Germanium","volume":"15","author":"Tauc","year":"1966","journal-title":"Phys. Status Solidi B"},{"issue":"1","key":"2026093002073320200_cit42","doi-asserted-by":"publisher","first-page":"11634","DOI":"10.1038\/s41598-021-91138-x","article-title":"Structural and Optical Properties of Amorphous Si\u2013Ge\u2013Te Thin Films Prepared by Combinatorial Sputtering","volume":"11","author":"Mihai","year":"2021","journal-title":"Sci. Rep."},{"issue":"5","key":"2026093002073320200_cit43","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201900548","article-title":"Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb-Based Ovonic Threshold Switching Thin Films","volume":"14","author":"Verdy","year":"2020","journal-title":"Phys. Status Solidi RRL"},{"issue":"8","key":"2026093002073320200_cit44","doi-asserted-by":"publisher","DOI":"10.1063\/1.4761997","article-title":"Hot-Carrier Trap-Limited Transport in Switching Chalcogenides","volume":"112","author":"Piccinini","year":"2012","journal-title":"J. Appl. Phys."},{"issue":"13","key":"2026093002073320200_cit45","doi-asserted-by":"publisher","DOI":"10.1063\/5.0279599","article-title":"Study of the Temperature Dependent Trap-Dominated Conduction in GeSe and GeSe2 Ovonic Threshold Switching Selectors","volume":"138","author":"Keukelier","year":"2025","journal-title":"J. Appl. Phys."},{"issue":"22","key":"2026093002073320200_cit46","doi-asserted-by":"publisher","first-page":"1504","DOI":"10.1103\/PhysRevLett.37.1504","article-title":"Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors","volume":"37","author":"Kastner","year":"1976","journal-title":"Phys. Rev. Lett."},{"issue":"3","key":"2026093002073320200_cit47","doi-asserted-by":"publisher","first-page":"657","DOI":"10.1103\/PhysRev.155.657","article-title":"Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal Systems","volume":"155","author":"Simmons","year":"1967","journal-title":"Phys. Rev."},{"key":"2026093002073320200_cit48","doi-asserted-by":"publisher","first-page":"510","DOI":"10.1016\/j.jallcom.2019.04.041","article-title":"The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory","volume":"792","author":"Liu","year":"2019","journal-title":"J. Alloys Compd."}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c13623","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/38\/52600\/68579724\/am-2026-13623s.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/38\/52600\/68579724\/am-2026-13623s.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T08:14:04Z","timestamp":1790756044000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/38\/52600\/5434198\/Reliable-Low-Energy-Selector-Only-Memory-Operation"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,21]]},"references-count":48,"journal-issue":{"issue":"38","published-online":{"date-parts":[[2026,9,21]]},"published-print":{"date-parts":[[2026,9,30]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c13623","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,21]]}}}