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Here, we propose a cold-source field-effect transistor (CS-FET) based on a van der Waals (vdW) heterostructure, comprising theoretically proposed monolayer boron antimonide (BSb) as the source electrode and indium selenide (InSe) as the channel. Through first-principles density functional theory (DFT) and quantum transport simulations, we demonstrate that the BSb\/InSe FET intrinsically enables cold-source operation without intentional source doping. Specifically, the unique electronic band structure of the BSb electrode acts as a natural energy filter, truncating the high-energy tail of the Fermi\u2013Dirac distribution and effectively suppressing the injection of thermally excited hot electrons into the channel. Driven by this carrier-cooling mechanism, the device achieves an ultralow SS of 38.14 mV\/dec at room temperature, outperforming conventional metal\u2013oxide\u2013semiconductor field-effect transistors (MOSFETs) and state-of-the-art graphene-based CS-FETs (68.74 mV\/dec). Furthermore, it delivers outstanding on-state currents of 1295.33 nA\/nm for high-performance and 907.42 nA\/nm for low-power applications, fully satisfying the International Roadmap for Devices and Systems (IRDS) 2028 targets. This work establishes BSb as a compelling, doping-free alternative to graphene for next-generation cold-source electrodes, providing a theoretical framework for ultralow-power 2D logic electronics.<\/jats:p>","DOI":"10.1021\/acsami.6c13925","type":"journal-article","created":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T13:02:45Z","timestamp":1789995765000},"page":"52951-52960","source":"Crossref","is-referenced-by-count":0,"title":["Doping-Free Cold-Source Contacts for BSb\/InSe van der Waals Transistors with Sub-60 mV\/Decade Subthreshold Swing"],"prefix":"10.1021","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-4915-5295","authenticated-orcid":true,"given":"Shuai","family":"Lang","sequence":"first","affiliation":[{"name":"Inner Mongolia University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010021"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xinru","family":"Xu","sequence":"additional","affiliation":[{"name":"Inner Mongolia University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010021"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kai","family":"Shi","sequence":"additional","affiliation":[{"name":"Inner Mongolia University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010021"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shun","family":"Song","sequence":"additional","affiliation":[{"name":"Inner Mongolia University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010021"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6952-365X","authenticated-orcid":true,"given":"Shaoqiang","family":"Guo","sequence":"additional","affiliation":[{"name":"Inner Mongolia University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010021"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3493-654X","authenticated-orcid":true,"given":"Haishan","family":"Zhang","sequence":"additional","affiliation":[{"name":"Inner Mongolia University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010021"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7676-4854","authenticated-orcid":true,"given":"Juan","family":"Lyu","sequence":"additional","affiliation":[{"name":"Inner Mongolia University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010021"]},{"name":"Inner Mongolia University , , ,","place":["Hohhot, China, 010021"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jian","family":"Gong","sequence":"additional","affiliation":[{"name":"Inner Mongolia University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010021"]},{"name":"Inner Mongolia Normal University , , , ,","place":["Hohhot, Inner Mongolia, P. R. China, 010022"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,21]]},"reference":[{"key":"2026093002081654700_cit1","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.physrep.2023.03.001","article-title":"Cold source field-effect transistors: Breaking the 60-mV\/decade switching limit at room temperature","volume":"1013","author":"Wang","year":"2023","journal-title":"Phys. Rep."},{"issue":"6","key":"2026093002081654700_cit2","doi-asserted-by":"publisher","first-page":"1601","DOI":"10.1039\/d0mh02029j","article-title":"Energy-efficient transistors: suppressing the subthreshold swing below the physical limit","volume":"8","author":"Zhai","year":"2021","journal-title":"Mater. 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