{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,21]],"date-time":"2026-10-21T21:39:48Z","timestamp":1792618788603,"version":"4.5.0"},"reference-count":102,"publisher":"American Chemical Society (ACS)","license":[{"start":{"date-parts":[[2026,10,22]],"date-time":"2026-10-22T00:00:00Z","timestamp":1792627200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,22]],"date-time":"2026-10-22T00:00:00Z","timestamp":1792627200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,22]],"date-time":"2026-10-22T00:00:00Z","timestamp":1792627200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100010574","name":"China Academy of Space Technology","doi-asserted-by":"publisher","award":["KJZYY-NCL-0405"],"award-info":[{"award-number":["KJZYY-NCL-0405"]}],"id":[{"id":"10.13039\/501100010574","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional (2D) indium selenide (InSe) has emerged as a compelling semiconductor platform for next-generation photodetection because of its thickness-tunable bandgap, high carrier mobility, and strong light\u2013matter interaction. Moreover, its nonlinear, ferroelectric, piezoelectric, and polarization\u2011related functionalities can be modulated by phase, layer number, stacking configuration, and device architecture. This Review summarizes the recent advances in InSe-based photodetectors through a structure\u2013property\u2013performance framework. We first discuss the crystal structures, thickness-dependent band evolution, and preparation strategies of InSe and then compare representative device architectures including single-InSe channels, van der Waals heterostructures, ferroelectric-gated devices, asymmetric Schottky contacts, optical microcavities, and plasmonic\/metasurface contact designs. Particular attention is paid to contact engineering, interface regulation, dark-current suppression, carrier-extraction acceleration, and polarization-selective detection, which have become central routes for improving sensitivity, speed, stability, and multifunctionality. Recent applications in optical sensing, broadband and polarization-resolved imaging, flexible and wearable electronics, neuromorphic vision, and secure optical communication are further reviewed. Finally, the remaining challenges associated with wafer-scale growth, defect control, environmental stability, standardized benchmarking, complementary metal\u2013oxide\u2013semiconductor (CMOS)-compatible integration, and system-level deployment are critically discussed. By emphasizing both recent progress and unresolved bottlenecks, this Review aims to provide a clearer roadmap for developing practical, high-performance InSe-based optoelectronic technologies.<\/jats:p>","DOI":"10.1021\/acsami.6c14015","type":"journal-article","created":{"date-parts":[[2026,10,21]],"date-time":"2026-10-21T21:01:40Z","timestamp":1792616500000},"source":"Crossref","is-referenced-by-count":0,"title":["Two-Dimensional Indium Selenide for Next-Generation Photodetection: Interface Engineering, Device Architectures, and Emerging Applications"],"prefix":"10.1021","author":[{"given":"Chao","family":"Du","sequence":"first","affiliation":[{"name":"Shanghai Institute of Technology , , 100 Haiquan Road , ,","place":["Shanghai, China, 201418"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Enshu","family":"Nan","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Technology , , 100 Haiquan Road , ,","place":["Shanghai, China, 201418"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junyi","family":"Qian","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Technology , , 100 Haiquan Road , ,","place":["Shanghai, China, 201418"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5132-0456","authenticated-orcid":true,"given":"Zhijie","family":"Zhang","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Technology , , 100 Haiquan Road , ,","place":["Shanghai, China, 201418"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Min","family":"Jin","sequence":"additional","affiliation":[{"name":"Shanghai Dianji University , , ,","place":["Shanghai, China, 201306"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,22]]},"reference":[{"key":"2026102117013088300_cit1","doi-asserted-by":"publisher","DOI":"10.3390\/cryst7050149","article-title":"Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors","volume":"7","author":"Cui","year":"2017","journal-title":"Crystals"},{"key":"2026102117013088300_cit2","doi-asserted-by":"publisher","DOI":"10.3390\/mi16030286","article-title":"Status of Extended Threshold Wavelength Split-Off Band IR Detectors and Quantum Material-Based Extension for Room-Temperature Operation","volume":"16","author":"Perera","year":"2025","journal-title":"Micromachines"},{"key":"2026102117013088300_cit3","doi-asserted-by":"publisher","first-page":"454","DOI":"10.1039\/c9nr09070c","article-title":"2D Material Broadband Photodetectors","volume":"12","author":"Yao","year":"2020","journal-title":"Nanoscale"},{"key":"2026102117013088300_cit4","doi-asserted-by":"publisher","first-page":"10972","DOI":"10.1039\/d5tc00364d","article-title":"Recent Progress in GaN-Based Ultraviolet Photodetectors","volume":"13","author":"Zhang","year":"2025","journal-title":"J. Mater. Chem. C"},{"key":"2026102117013088300_cit5","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202406028","article-title":"Recent Advances in Antimony Selenide Photodetectors","volume":"36","author":"Liu","year":"2024","journal-title":"Adv. Mater."},{"key":"2026102117013088300_cit6","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2024.109725","article-title":"Self-Powered Photodetectors Based on Two-Dimensional van der Waals Semiconductors","volume":"127","author":"Kim","year":"2024","journal-title":"Nano Energy"},{"key":"2026102117013088300_cit7","doi-asserted-by":"publisher","first-page":"11548","DOI":"10.1039\/d3ta00950e","article-title":"Recent Progress in Functional Two-Dimensional Photovoltaic Photodetectors and Related Emerging Applications","volume":"11","author":"Li","year":"2023","journal-title":"J. Mater. Chem. A"},{"key":"2026102117013088300_cit8","doi-asserted-by":"publisher","DOI":"10.3390\/mi15101249","article-title":"Recent Progress in Photodetectors: From Materials to Structures and Applications","volume":"15","author":"Ma","year":"2024","journal-title":"Micromachines"},{"key":"2026102117013088300_cit9","doi-asserted-by":"publisher","first-page":"5266","DOI":"10.1038\/s41467-018-07643-7","article-title":"Current Status and Technological Prospect of Photodetectors Based on Two-Dimensional Materials","volume":"9","author":"Konstantatos","year":"2018","journal-title":"Nat. Commun."},{"key":"2026102117013088300_cit10","doi-asserted-by":"publisher","first-page":"2001125","DOI":"10.1002\/aelm.202001125","article-title":"Recent Advances in 2D Materials for Photodetectors","volume":"7","author":"Jiang","year":"2021","journal-title":"Adv. Electron. Mater."},{"key":"2026102117013088300_cit11","doi-asserted-by":"publisher","first-page":"5204","DOI":"10.1039\/c6cs00896h","article-title":"Perovskite-Based Photodetectors: Materials and Devices","volume":"46","author":"Wang","year":"2017","journal-title":"Chem. Soc. Rev."},{"key":"2026102117013088300_cit12","doi-asserted-by":"publisher","first-page":"352001","DOI":"10.1088\/1361-6528\/ad4652","article-title":"2D Materials-Based Photodetectors Combined with Ferroelectrics","volume":"35","author":"Bai","year":"2024","journal-title":"Nanotechnology"},{"key":"2026102117013088300_cit13","article-title":"Two-Dimensional Materials Photodetectors for Optical Communications","volume":"50","author":"Ke","year":"2023","journal-title":"Chin. J. Lasers"},{"key":"2026102117013088300_cit14","doi-asserted-by":"publisher","first-page":"140","DOI":"10.1002\/inf2.12014","article-title":"Low-Dimensional Nanomaterial\/Si Heterostructure-Based Photodetectors","volume":"1","author":"Tian","year":"2019","journal-title":"InfoMat"},{"key":"2026102117013088300_cit15","doi-asserted-by":"publisher","first-page":"1803807","DOI":"10.1002\/adfm.201803807","article-title":"Progress, Challenges, and Opportunities for 2D Material Based Photodetectors","volume":"29","author":"Long","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"2026102117013088300_cit16","doi-asserted-by":"publisher","first-page":"842","DOI":"10.3390\/mi11090842","article-title":"Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs","volume":"11","author":"Dardano","year":"2020","journal-title":"Micromachines"},{"key":"2026102117013088300_cit17","doi-asserted-by":"publisher","first-page":"2200321","DOI":"10.1002\/admt.202200321","article-title":"Properties, Synthesis, and Device Applications of 2D Layered InSe","volume":"7","author":"Dai","year":"2022","journal-title":"Adv. Mater. Technol."},{"key":"2026102117013088300_cit18","doi-asserted-by":"publisher","first-page":"1777","DOI":"10.1021\/acsaelm.0c00105","article-title":"Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths","volume":"2","author":"Lu","year":"2020","journal-title":"ACS Appl. Electron. Mater."},{"key":"2026102117013088300_cit19","doi-asserted-by":"publisher","first-page":"16952","DOI":"10.1039\/d4ta01584c","article-title":"Research Progress on Two-Dimensional Indium Selenide Crystals and Optoelectronic Devices","volume":"12","author":"Zheng","year":"2024","journal-title":"J. Mater. Chem. A"},{"key":"2026102117013088300_cit20","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202501332","article-title":"Reversible Band Alignment Transition in WS2\/InSe Heterostructures Enabled by Strain Engineering","volume":"13","author":"Wu","year":"2025","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit21","doi-asserted-by":"publisher","first-page":"14206","DOI":"10.1039\/D5NR00465A","article-title":"An Ultra-High-Speed Vertically Illuminated Self-Driven Lateral Asymmetric InSe Photodetector","volume":"17","author":"Tamalampudi","year":"2025","journal-title":"Nanoscale"},{"key":"2026102117013088300_cit22","doi-asserted-by":"publisher","first-page":"2408826","DOI":"10.1002\/smll.202408826","article-title":"Carrier Recirculation Induced Ultrasensitive Photodetectors of InSe\/CdTe Heterostructure Featuring an Interfacial Holes Layer","volume":"21","author":"Zhao","year":"2025","journal-title":"Small"},{"key":"2026102117013088300_cit23","doi-asserted-by":"publisher","first-page":"517","DOI":"10.56042\/ijpap.v62i6.8788","article-title":"Recent Advances in Indium Selenide (InSe) Based Photodetectors: A Mini Review","volume":"62","author":"Mishra","year":"2024","journal-title":"Indian J. Pure Appl. Phys."},{"key":"2026102117013088300_cit24","doi-asserted-by":"publisher","first-page":"5936","DOI":"10.1021\/acsaelm.5c00587","article-title":"Investigation on the Preparation and Performance of InSe Nanosheets\/Si Heterojunction Photodetectors","volume":"7","author":"Liu","year":"2025","journal-title":"ACS Appl. Electron. Mater."},{"key":"2026102117013088300_cit25","doi-asserted-by":"publisher","first-page":"31","DOI":"10.1038\/s41699-025-00549-1","article-title":"Efficient Energy Transfer and Photoluminescence Enhancement in 2D MoS2\/bulk InSe van der Waals Heterostructures","volume":"9","author":"Altvater","year":"2025","journal-title":"npj 2D Mater. Appl."},{"key":"2026102117013088300_cit26","doi-asserted-by":"publisher","first-page":"18174","DOI":"10.1039\/d2tc03395j","article-title":"Ultrasensitive Photodetectors Based on Graphene Quantum Dot-InSe Mixed-Dimensional van der Waals Heterostructures","volume":"10","author":"Song","year":"2022","journal-title":"J. Mater. Chem. C"},{"key":"2026102117013088300_cit27","doi-asserted-by":"publisher","DOI":"10.1016\/j.jsamd.2022.100484","article-title":"Ultrahigh Responsive Negative Photoconductivity Photodetector Based on Multilayer Graphene\/InSe van der Waals Heterostructure","volume":"7","author":"Cui","year":"2022","journal-title":"J. Sci.: Adv. Mater. Devices"},{"key":"2026102117013088300_cit28","doi-asserted-by":"publisher","first-page":"18545","DOI":"10.1021\/acsnano.5c02102","article-title":"All-van-der-Waals Heterostructure of MoS2 Grating and InSe Flake for Spectrally Selective Polarization-Sensitive Photodetection in NIR Region","volume":"19","author":"Chu","year":"2025","journal-title":"ACS Nano"},{"key":"2026102117013088300_cit29","doi-asserted-by":"publisher","first-page":"2747","DOI":"10.1002\/smll.201400104","article-title":"Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances","volume":"10","author":"Han","year":"2014","journal-title":"Small"},{"key":"2026102117013088300_cit30","doi-asserted-by":"publisher","first-page":"206","DOI":"10.3390\/cryst8050206","article-title":"Layered Indium Selenide under High Pressure: A Review","volume":"8","author":"Segura","year":"2018","journal-title":"Crystals"},{"key":"2026102117013088300_cit31","doi-asserted-by":"publisher","first-page":"133001","DOI":"10.1088\/1361-648x\/acb2a5","article-title":"Carrier and Phonon Transport in 2D InSe and Its Janus Structures","volume":"35","author":"Wan","year":"2023","journal-title":"J. Phys.: Condens. Matter"},{"key":"2026102117013088300_cit32","doi-asserted-by":"publisher","first-page":"372","DOI":"10.3390\/nano7110372","article-title":"The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications","volume":"7","author":"Boukhvalov","year":"2017","journal-title":"Nanomaterials"},{"key":"2026102117013088300_cit33","doi-asserted-by":"publisher","first-page":"542","DOI":"10.1126\/science.aba9778","article-title":"Exceptional Plasticity in the Bulk Single-Crystalline van der Waals Semiconductor InSe","volume":"369","author":"Wei","year":"2020","journal-title":"Science"},{"key":"2026102117013088300_cit34","doi-asserted-by":"publisher","first-page":"36","DOI":"10.1038\/s41467-022-35490-0","article-title":"Sliding Ferroelectricity in van der Waals Layered \u03b3-InSe Semiconductor","volume":"14","author":"Sui","year":"2023","journal-title":"Nat. Commun."},{"key":"2026102117013088300_cit35","doi-asserted-by":"publisher","first-page":"3799","DOI":"10.1038\/s41467-024-48218-z","article-title":"Atomic-Level Polarization Reversal in Sliding Ferroelectric Semiconductors","volume":"15","author":"Sui","year":"2024","journal-title":"Nat. Commun."},{"key":"2026102117013088300_cit36","doi-asserted-by":"publisher","first-page":"2508213","DOI":"10.1002\/adfm.202508213","article-title":"Intrinsic Sliding Ferroelectricity and High-Quality Superlinear Emission in van der Waals \u03b3-InSe Semiconductor","volume":"35","author":"Sui","year":"2025","journal-title":"Adv. Funct. Mater."},{"key":"2026102117013088300_cit37","doi-asserted-by":"publisher","first-page":"39619","DOI":"10.1038\/srep39619","article-title":"The Direct-to-Indirect Band Gap Crossover in Two-Dimensional van der Waals Indium Selenide Crystals","volume":"6","author":"Mudd","year":"2016","journal-title":"Sci. Rep."},{"key":"2026102117013088300_cit38","doi-asserted-by":"publisher","first-page":"5714","DOI":"10.1002\/adma.201302616","article-title":"Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement","volume":"25","author":"Mudd","year":"2013","journal-title":"Adv. Mater."},{"key":"2026102117013088300_cit39","doi-asserted-by":"publisher","first-page":"1263","DOI":"10.1021\/nn405036u","article-title":"Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe","volume":"8","author":"Lei","year":"2014","journal-title":"ACS Nano"},{"key":"2026102117013088300_cit40","doi-asserted-by":"publisher","first-page":"223","DOI":"10.1038\/nnano.2016.242","article-title":"High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe","volume":"12","author":"Bandurin","year":"2017","journal-title":"Nat. Nanotechnol."},{"key":"2026102117013088300_cit41","doi-asserted-by":"publisher","first-page":"497","DOI":"10.1038\/nnano.2013.100","article-title":"Ultrasensitive Photodetectors Based on Monolayer MoS2","volume":"8","author":"Lopez-Sanchez","year":"2013","journal-title":"Nat. Nanotechnol."},{"key":"2026102117013088300_cit42","doi-asserted-by":"publisher","first-page":"42001","DOI":"10.1021\/acsami.7b14853","article-title":"Ultrahigh-Gain and Fast Photodetectors Built on Atomically Thin Bilayer Tungsten Disulfide Grown by Chemical Vapor Deposition","volume":"9","author":"Yang","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026102117013088300_cit43","doi-asserted-by":"publisher","first-page":"2766","DOI":"10.1021\/acs.nanolett.7b04205","article-title":"High-Performance WSe2 Phototransistors with 2D\/2D Ohmic Contacts","volume":"18","author":"Wang","year":"2018","journal-title":"Nano Lett."},{"key":"2026102117013088300_cit44","doi-asserted-by":"publisher","first-page":"3851","DOI":"10.1038\/s41467-026-70520-1","article-title":"Microgravity-Activated High-Performance van der Waals InSe Ferroelectric Semiconductor","volume":"17","author":"Jin","year":"2026","journal-title":"Nat. Commun."},{"key":"2026102117013088300_cit45","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202506506","article-title":"Expanded InSe Crystal Structure with Reduced Intrinsic Defects for High-Performance Field-Effect Transistors","volume":"38","author":"Wang","year":"2026","journal-title":"Adv. Mater."},{"key":"2026102117013088300_cit46","doi-asserted-by":"publisher","first-page":"666","DOI":"10.1126\/science.1102896","article-title":"Electric Field Effect in Atomically Thin Carbon Films","volume":"306","author":"Novoselov","year":"2004","journal-title":"Science"},{"key":"2026102117013088300_cit47","doi-asserted-by":"publisher","first-page":"7291","DOI":"10.1021\/acsnano.9b03278","article-title":"Robust Piezo-Phototronic Effect in Multilayer \u03b3-InSe for High-Performance Self-Powered Flexible Photodetectors","volume":"13","author":"Dai","year":"2019","journal-title":"ACS Nano"},{"key":"2026102117013088300_cit48","doi-asserted-by":"publisher","first-page":"568","DOI":"10.1126\/science.1194975","article-title":"Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials","volume":"331","author":"Coleman","year":"2011","journal-title":"Science"},{"key":"2026102117013088300_cit49","doi-asserted-by":"publisher","first-page":"2201685","DOI":"10.1002\/adom.202201685","article-title":"Decorating InSe Surface by Gold Species for Improved Carrier Transport and Efficient Sunlight Harvesting toward High-Performance Flexible Photodetectors","volume":"11","author":"Li","year":"2023","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit50","doi-asserted-by":"publisher","first-page":"244","DOI":"10.1038\/s41928-025-01338-w","article-title":"Solution-Processed Wafer-Scale Indium Selenide Semiconductor Thin Films with High Mobilities","volume":"8","author":"He","year":"2025","journal-title":"Nat. Electron."},{"key":"2026102117013088300_cit51","doi-asserted-by":"publisher","first-page":"132","DOI":"10.1016\/j.mattod.2020.06.012","article-title":"Towards Controlled Synthesis of 2D Crystals by Chemical Vapor Deposition (CVD)","volume":"40","author":"Zhang","year":"2020","journal-title":"Mater. Today"},{"key":"2026102117013088300_cit52","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201802351","article-title":"Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition","volume":"14","author":"Chang","year":"2018","journal-title":"Small"},{"key":"2026102117013088300_cit53","doi-asserted-by":"publisher","first-page":"114","DOI":"10.1557\/s43578-021-00384-2","article-title":"Computational Synthesis of 2D Materials Grown by Chemical Vapor Deposition","volume":"37","author":"Momeni","year":"2022","journal-title":"J. Mater. Res."},{"key":"2026102117013088300_cit54","doi-asserted-by":"publisher","first-page":"15678","DOI":"10.1002\/chem.201803634","article-title":"Phase-Engineered Growth of Ultrathin InSe Flakes by Chemical Vapor Deposition for High-Efficiency Second Harmonic Generation","volume":"24","author":"Huang","year":"2018","journal-title":"Chem. Eur. J."},{"key":"2026102117013088300_cit55","doi-asserted-by":"publisher","first-page":"2668","DOI":"10.1021\/acs.jpclett.2c00518","article-title":"Spectral Engineering of InSe Nanobelts for Full-Color Imaging by Tailoring the Thickness","volume":"13","author":"Wu","year":"2022","journal-title":"J. Phys. Chem. Lett."},{"key":"2026102117013088300_cit56","doi-asserted-by":"publisher","first-page":"3483","DOI":"10.1016\/j.matt.2023.07.012","article-title":"Wafer-Scale Growth of Two-Dimensional, Phase-Pure InSe","volume":"6","author":"Song","year":"2023","journal-title":"Matter"},{"key":"2026102117013088300_cit57","doi-asserted-by":"publisher","DOI":"10.1002\/adom.201901862","article-title":"Liquid-Exfoliated Few-Layer InSe Nanosheets for Broadband Nonlinear All-Optical Applications","volume":"8","author":"Liao","year":"2020","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit58","doi-asserted-by":"publisher","first-page":"30318","DOI":"10.1109\/jsen.2023.3327382","article-title":"Controllable Growth of \u03b3-In2Se3 and \u03b2-InSe Thin Films for High-Performance Broadband Photodetectors","volume":"23","author":"Li","year":"2023","journal-title":"IEEE Sens. J."},{"key":"2026102117013088300_cit59","doi-asserted-by":"publisher","DOI":"10.1063\/5.0221773","article-title":"Selectable Growth and Electronic Structures of Two-Dimensional Layered InSe and In2Se3 Films","volume":"125","author":"Xu","year":"2024","journal-title":"Appl. Phys. Lett."},{"key":"2026102117013088300_cit60","doi-asserted-by":"publisher","first-page":"4225","DOI":"10.1021\/acsnano.7b01168","article-title":"Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse","volume":"11","author":"Yang","year":"2017","journal-title":"ACS Nano"},{"key":"2026102117013088300_cit61","doi-asserted-by":"publisher","first-page":"2800","DOI":"10.1021\/nl500817g","article-title":"High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response","volume":"14","author":"Tamalampudi","year":"2014","journal-title":"Nano Lett."},{"key":"2026102117013088300_cit62","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2024.161237","article-title":"\u03b5-InSe-Based Heterojunction Photodetector and Its Performance Modulation by Growth Pressure","volume":"679","author":"Wen","year":"2025","journal-title":"Appl. Surf. Sci."},{"key":"2026102117013088300_cit63","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202402957","article-title":"Nonlinear Photodetector Based on InSe p\u2013n Homojunction for Improving Spatial Imaging Resolution","volume":"34","author":"Zhang","year":"2024","journal-title":"Adv. Funct. Mater."},{"key":"2026102117013088300_cit64","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202411761","article-title":"Polarization-Sensitive Enhancement of Photoluminescence and Interlayer Absorption in WSe2\/InSe Heterostructure via Plasmonic Metastructure","volume":"21","author":"Zhang","year":"2025","journal-title":"Small"},{"key":"2026102117013088300_cit65","doi-asserted-by":"publisher","DOI":"10.1002\/lpor.202400480","article-title":"Self-Powered and Vis-Infrared Broadband Gr\/InSe\/MoTe2 Heterostructure Photodetectors with Ultra-Fast Response and Low Dark Current","volume":"19","author":"He","year":"2025","journal-title":"Laser Photonics Rev."},{"key":"2026102117013088300_cit66","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2024.176356","article-title":"Graphene Electrode-Enhanced InSe\/WSe2 van der Waals Heterostructure for High-Performance Broadband Photodetector with Imaging Capabilities","volume":"1006","author":"Aleithan","year":"2024","journal-title":"J. Alloys Compd."},{"key":"2026102117013088300_cit67","doi-asserted-by":"publisher","first-page":"35039","DOI":"10.1039\/c9ra06667e","article-title":"p-MoS2\/n-InSe van der Waals Heterojunctions and Their Applications in All-2D Optoelectronic Devices","volume":"9","author":"Li","year":"2019","journal-title":"RSC Adv."},{"key":"2026102117013088300_cit68","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201802011","article-title":"Highly Polarized and Fast Photoresponse of Black Phosphorus-InSe Vertical p\u2013n Heterojunctions","volume":"28","author":"Zhao","year":"2018","journal-title":"Adv. Funct. Mater."},{"key":"2026102117013088300_cit69","doi-asserted-by":"publisher","first-page":"7851","DOI":"10.1007\/s12274-022-5323-1","article-title":"High-Performance Self-Powered Ultraviolet to Near-Infrared Photodetector Based on WS2\/InSe van der Waals Heterostructure","volume":"16","author":"Chen","year":"2023","journal-title":"Nano Res."},{"key":"2026102117013088300_cit70","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202401379","article-title":"Self-Powered Broadband UV-NIR Photodetectors Based on InSe\/PtS2 van der Waals Heterostructure","volume":"12","author":"Xu","year":"2024","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit71","doi-asserted-by":"publisher","first-page":"12407","DOI":"10.1039\/C8TC04378G","article-title":"A High Performance Self-Driven Photodetector Based on a Graphene\/InSe\/MoS2 Vertical Heterostructure","volume":"6","author":"Chen","year":"2018","journal-title":"J. Mater. Chem. C"},{"key":"2026102117013088300_cit72","doi-asserted-by":"publisher","first-page":"6666","DOI":"10.1021\/acs.nanolett.0c02448","article-title":"Ferroelectric-Gated InSe Photodetectors with High On\/Off Ratios and Photoresponsivity","volume":"20","author":"Liu","year":"2020","journal-title":"Nano Lett."},{"key":"2026102117013088300_cit73","doi-asserted-by":"publisher","DOI":"10.1002\/admi.202200075","article-title":"2D InSe Self-Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts","volume":"9","author":"Chen","year":"2022","journal-title":"Adv. Mater. Interfaces"},{"key":"2026102117013088300_cit74","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202402729","article-title":"Highly Sensitive InSe Nanosheet Ultraviolet Photodetector Realized via an Asymmetric Fabry\u2013P\u00e9rot Structure","volume":"13","author":"Chen","year":"2025","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit75","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202101772","article-title":"Ultrasensitive and Broad-Spectrum Photodetectors Based on InSe\/ReS2 Heterostructure","volume":"10","author":"Ma","year":"2022","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit76","doi-asserted-by":"publisher","first-page":"5740","DOI":"10.1021\/acsami.7b15106","article-title":"Ultraefficient Ultraviolet and Visible Light Sensing and Ohmic Contacts in High-Mobility InSe Nanoflake Photodetectors Fabricated by the Focused Ion Beam Technique","volume":"10","author":"Yang","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026102117013088300_cit77","doi-asserted-by":"publisher","first-page":"12509","DOI":"10.1039\/c8tc04459g","article-title":"Out-of-Plane Stacking of InSe-Based Heterostructures towards High Performance Electronic and Optoelectronic Devices Using a Graphene Electrode","volume":"6","author":"Gao","year":"2018","journal-title":"J. Mater. Chem. C"},{"key":"2026102117013088300_cit78","doi-asserted-by":"publisher","first-page":"4094","DOI":"10.1039\/c9nr08791e","article-title":"Au-InSe van der Waals Schottky Junctions with Ultralow Reverse Current and High Photosensitivity","volume":"12","author":"Hu","year":"2020","journal-title":"Nanoscale"},{"key":"2026102117013088300_cit79","doi-asserted-by":"publisher","DOI":"10.3390\/nano13010147","article-title":"Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene\/InSe Heterostructure","volume":"13","author":"Li","year":"2022","journal-title":"Nanomaterials"},{"key":"2026102117013088300_cit80","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202410696","article-title":"Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in \u03b5-InSe Layers","volume":"36","author":"Wang","year":"2024","journal-title":"Adv. Mater."},{"key":"2026102117013088300_cit81","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2025.163670","article-title":"Ultrafast Self-Powered Photodetector Based on Plasmon-Assisted InSe\/WSe2 van der Waals Heterostructures","volume":"707","author":"Li","year":"2025","journal-title":"Appl. Surf. Sci."},{"key":"2026102117013088300_cit82","doi-asserted-by":"publisher","first-page":"7876","DOI":"10.1021\/acs.nanolett.8b03689","article-title":"Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation","volume":"18","author":"Wells","year":"2018","journal-title":"Nano Lett."},{"key":"2026102117013088300_cit83","doi-asserted-by":"publisher","first-page":"43480","DOI":"10.1021\/acsami.9b13442","article-title":"Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties","volume":"11","author":"Arora","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026102117013088300_cit84","doi-asserted-by":"publisher","first-page":"12571","DOI":"10.1021\/acsnano.8b07159","article-title":"Near-Field Coupled Integrable Two-Dimensional InSe Photosensor on Optical Fiber","volume":"12","author":"Jin","year":"2018","journal-title":"ACS Nano"},{"key":"2026102117013088300_cit85","doi-asserted-by":"publisher","first-page":"3004","DOI":"10.1039\/d1nr07884d","article-title":"Zero Power Infrared Sensing in 2D\/3D-Assembled Heterogeneous Graphene\/In\/InSe\/Au","volume":"14","author":"Jang","year":"2022","journal-title":"Nanoscale"},{"key":"2026102117013088300_cit86","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202300854","article-title":"High-Sensitivity Adjustable Operating Modes Multifunctional Detector Based on InSe\/VO2 Heterojunction for Light and Electric Field Perception","volume":"11","author":"Wang","year":"2023","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit87","doi-asserted-by":"publisher","first-page":"19214","DOI":"10.1021\/acsami.4c01396","article-title":"Ultrasensitive Near-Infrared Polarization Photodetectors with Violet Phosphorus\/InSe van der Waals Heterostructures","volume":"16","author":"Ahmad","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026102117013088300_cit88","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202418405","article-title":"Gradient-Metasurface-Contact Photodetector for Visible-to-Near-Infrared Spin Light","volume":"37","author":"He","year":"2025","journal-title":"Adv. Mater."},{"key":"2026102117013088300_cit89","doi-asserted-by":"publisher","first-page":"5794","DOI":"10.1021\/acs.nanolett.5c00461","article-title":"Rotation-Symmetry Grating Contact Photodetector for Visible Full Linear Polarimetry Detection","volume":"25","author":"Wang","year":"2025","journal-title":"Nano Lett."},{"key":"2026102117013088300_cit90","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adn6028","article-title":"Nonlinear Self-Calibrated Spectrometer with Single GeSe-InSe Heterojunction Device","volume":"10","author":"Darweesh","year":"2024","journal-title":"Sci. Adv."},{"key":"2026102117013088300_cit91","doi-asserted-by":"publisher","first-page":"3520","DOI":"10.1039\/d2nr06642d","article-title":"Visible and Infrared Photodiode Based on \u03b3-InSe\/Ge van der Waals Heterojunction for Polarized Detection and Imaging","volume":"15","author":"Yang","year":"2023","journal-title":"Nanoscale"},{"key":"2026102117013088300_cit92","doi-asserted-by":"publisher","DOI":"10.1063\/1.5123401","article-title":"Self-Assembly of a Lateral Quasi-Ohmic CuInSe2\/InSe Isotype Heterojunction for Flexible Devices by Pulsed Laser Deposition","volume":"115","author":"Ji","year":"2019","journal-title":"Appl. Phys. Lett."},{"key":"2026102117013088300_cit93","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/ab73e9","article-title":"Enhancement of Electronic and Optoelectronic Performance of Multilayer InSe via Strain Engineering","volume":"35","author":"Gao","year":"2020","journal-title":"Semicond. Sci. Technol."},{"key":"2026102117013088300_cit94","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202108261","article-title":"Flexible Photodetectors Based on All-Solution-Processed Cu Electrodes and InSe Nanoflakes with High Stabilities","volume":"32","author":"Li","year":"2022","journal-title":"Adv. Funct. Mater."},{"key":"2026102117013088300_cit95","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202400358","article-title":"Robust Self-Powered Optoelectronic Synapses Based on Epitaxial InSe\/GaN Heterojunction with Interfacial Charge-Trapping Layer","volume":"12","author":"Miao","year":"2024","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit96","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2024.110511","article-title":"Ultra-Sensitive Broadband Photoresponse Realized in Epitaxial SnSe\/InSe\/GaN Heterojunction for Light Adaptive Artificial Optoelectronic Synapses","volume":"133","author":"Zhang","year":"2025","journal-title":"Nano Energy"},{"key":"2026102117013088300_cit97","doi-asserted-by":"publisher","first-page":"13909","DOI":"10.1021\/acs.nanolett.5c03781","article-title":"InSe Dynamic Memristor-Based Reservoir Computing for Temporal and Spatial Signal Recognition","volume":"25","author":"Chen","year":"2025","journal-title":"Nano Lett."},{"key":"2026102117013088300_cit98","doi-asserted-by":"publisher","first-page":"40198","DOI":"10.1021\/acsnano.5c16269","article-title":"InSe Ferroelectric Field-Effect Transistor for Simultaneous Perception\u2013Memory\u2013Computation All-in-One Broadband Motion Detection","volume":"19","author":"Chen","year":"2025","journal-title":"ACS Nano"},{"key":"2026102117013088300_cit99","doi-asserted-by":"publisher","first-page":"A97","DOI":"10.48550\/arXiv.2108.11803","article-title":"Self-Driven Highly Responsive p\u2013n Junction InSe Heterostructure Near-Infrared Light Detector","volume":"10","author":"Patil","year":"2022","journal-title":"Photonics Res."},{"key":"2026102117013088300_cit100","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202302149","article-title":"Mosaic Se\/InSe Heterojunction for Self-Powered Bipolar Photodetection","volume":"12","author":"Wang","year":"2024","journal-title":"Adv. Opt. Mater."},{"key":"2026102117013088300_cit101","doi-asserted-by":"publisher","DOI":"10.3390\/nano15010003","article-title":"Photoelectrochemical-Type Photodetectors Based on Ball Milling InSe for Underwater Optoelectronic Devices","volume":"15","author":"Xu","year":"2025","journal-title":"Nanomaterials"},{"key":"2026102117013088300_cit102","doi-asserted-by":"publisher","first-page":"299","DOI":"10.1126\/science.adu3803","article-title":"Two-Dimensional Indium Selenide Wafers for Integrated Electronics","volume":"389","author":"Qin","year":"2025","journal-title":"Science"}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c14015","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/doi\/10.1021\/acsami.6c14015\/68936609\/am-2026-14015m.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/doi\/10.1021\/acsami.6c14015\/68936609\/am-2026-14015m.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,21]],"date-time":"2026-10-21T21:10:16Z","timestamp":1792617016000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/doi\/10.1021\/acsami.6c14015\/5455773\/Two-Dimensional-Indium-Selenide-for-Next"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,22]]},"references-count":102,"URL":"https:\/\/doi.org\/10.1021\/acsami.6c14015","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,22]]}}}