{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T09:52:35Z","timestamp":1791366755128,"version":"4.3.1"},"reference-count":37,"publisher":"American Chemical Society (ACS)","issue":"39","license":[{"start":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T00:00:00Z","timestamp":1790380800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T00:00:00Z","timestamp":1790380800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T00:00:00Z","timestamp":1790380800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2024-00405016"],"award-info":[{"award-number":["RS-2024-00405016"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2024-00421181"],"award-info":[{"award-number":["RS-2024-00421181"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,7]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Amorphous In\u2013Ga\u2013Zn\u2013O (IGZO) thin-film transistors (TFTs) are promising channel candidates for future DRAM cell transistors because of their ultralow off-state leakage, moderate mobility, low-temperature processability, and compatibility with conformal atomic layer deposition (ALD). However, the n-type nature of IGZO commonly leads to negative threshold voltage (Vth), which is unfavorable for DRAM cells that must maintain a low-leakage off state for long retention. In addition, mobility enhancement by increasing the In contribution or reducing Ga content generally pushes Vth further negative and degrades bias-stress reliability. Here, we report a co-designed Ga2O3\/IGZO buried-channel stack that mitigates the trade-off among field-effect mobility (\u00b5FE), Vth, and bias-stress reliability. Across Devices 1\u20134, the designed gate-side Ga2O3 thickness, lower-IGZO thickness, and lower-IGZO composition were co-varied to maintain an approximately constant total semiconductor thickness and a positive Vth near 0.8\u20131.0 V. The optimized Device 3 with a designed 1.5 nm Ga2O3 region exhibited a median \u00b5FE of 14.6 \u00b1 0.43 cm2 V\u20131 s\u20131, compared with 7.7 \u00b1 0.39 cm2 V\u20131 s\u20131 for Device 1, while retaining a median Vth of 0.852 \u00b1 0.020 V (n = 10 TFTs per stack). Separate reliability measurements showed a representative increase in constant-voltage-stress time-to-breakdown from 153 to 7890 s and a 27% lower mean PBTS-induced \u0394Vth for Device 3 than Device 1 at 104 s and 403 K (0.572 versus 0.786 V; n = 3 each). Structural, chemical, capacitance, and temperature-dependent transport analyses show that the 300 \u00b0C O2 anneal and 450 \u00b0C Al2O3 gate-dielectric ALD step convert the initially inserted Ga2O3\/IGZO bilayer into a partially intermixed gate-side channel. A STEM-EDS-constrained, self-consistent one-dimensional Poisson analysis further shows that In redistribution shifts the calculated charge centroid and carrier-density maximum away from the Al2O3 interface at equal mobile sheet density. Together, these results support a displaced, depth-distributed buried channel that reduces exposure to the trap-sensitive dielectric interface while preserving effective gate control and high-temperature off-state margin.<\/jats:p>","DOI":"10.1021\/acsami.6c14070","type":"journal-article","created":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T20:01:26Z","timestamp":1790452886000},"page":"53644-53655","source":"Crossref","is-referenced-by-count":0,"title":["Ga2O3-Engineered Buried-Channel Transport in Amorphous IGZO Thin-Film Transistors with Improved Mobility and Reliability for DRAM Cell Applications"],"prefix":"10.1021","volume":"18","author":[{"given":"Taeyoon","family":"Lee","sequence":"first","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kwanwoo","family":"Song","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jeewon","family":"Bu","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Youngmin","family":"Kim","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jun Hoe","family":"Heo","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1727-5786","authenticated-orcid":true,"given":"Jiwan","family":"Kim","sequence":"additional","affiliation":[{"name":"University of Seoul , , ,","place":["Seoul, Republic of Korea, 02504"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6952-7359","authenticated-orcid":true,"given":"Ho Won","family":"Jang","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Seoul National University , , ,","place":["Suwon, Republic of Korea, 16229"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,26]]},"reference":[{"key":"2026100705070742200_cit1","doi-asserted-by":"publisher","first-page":"33","DOI":"10.1109\/MM.2024.3373763","article-title":"AI and Memory Wall","volume":"44","author":"Gholami","year":"2024","journal-title":"IEEE Micro"},{"key":"2026100705070742200_cit2","volume-title":"Memory Market Surges beyond Expectations: Almost $200 Billion in 2025, Driven by HBM and AI","author":"Yole Group","year":"2025"},{"key":"2026100705070742200_cit3","doi-asserted-by":"publisher","first-page":"334","DOI":"10.1557\/mrs.2018.95","article-title":"Future of Dynamic Random-Access Memory as Main Memory","volume":"43","author":"Kim","year":"2018","journal-title":"MRS Bull."},{"key":"2026100705070742200_cit4","article-title":"High-Performance Gate-All-Around Junctionless Vertical-Channel Transistors with the Ultra-Low Subthreshold Swing for Next-Generation 4F2 DRAM","volume-title":"2023 IEEE International Electron Devices Meeting (IEDM)","author":"Yoo","year":"2023"},{"key":"2026100705070742200_cit5","doi-asserted-by":"publisher","first-page":"934","DOI":"10.1039\/D4NH00057A","article-title":"Oxide and 2D TMD Semiconductors for 3D DRAM Cell Transistors","volume":"9","author":"Hur","year":"2024","journal-title":"Nanoscale Horiz."},{"key":"2026100705070742200_cit6","doi-asserted-by":"crossref","DOI":"10.1109\/IEDM50854.2024.10873368","article-title":"Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture","volume-title":"2024 IEEE International Electron Devices Meeting (IEDM)","author":"Fujii","year":"2024"},{"key":"2026100705070742200_cit7","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1038\/s41467-025-65925-3","article-title":"High-Density Three-Dimensional Integration of Dynamic Random-Access Memory Using Vertical Dual-Gate In-Ga-Zn-O Thin-Film Transistors","volume":"16","author":"Liao","year":"2025","journal-title":"Nat. Commun."},{"key":"2026100705070742200_cit8","doi-asserted-by":"publisher","first-page":"2196","DOI":"10.1109\/TED.2022.3154693","article-title":"Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM with High Density beyond 4F2 by Monolithic Stacking","volume":"69","author":"Duan","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"2026100705070742200_cit9","doi-asserted-by":"crossref","first-page":"28.2.1","DOI":"10.1109\/IEDM13553.2020.9371900","article-title":"Capacitor-Less, Long-Retention (&gt;400 s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM","volume-title":"2020 IEEE International Electron Devices Meeting (IEDM)","author":"Belmonte","year":"2020"},{"key":"2026100705070742200_cit10","doi-asserted-by":"crossref","first-page":"10.6.1","DOI":"10.1109\/IEDM19574.2021.9720596","article-title":"Tailoring IGZO-TFT Architecture for Capacitorless DRAM, Demonstrating &gt;103 s Retention, &gt;1011 Cycles Endurance and Lg Scalability down to 14 nm","volume-title":"2021 IEEE International Electron Devices Meeting (IEDM)","author":"Belmonte","year":"2021"},{"key":"2026100705070742200_cit11","doi-asserted-by":"publisher","first-page":"488","DOI":"10.1038\/nature03090","article-title":"Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors","volume":"432","author":"Nomura","year":"2004","journal-title":"Nature"},{"key":"2026100705070742200_cit12","doi-asserted-by":"publisher","first-page":"15","DOI":"10.1038\/asiamat.2010.5","article-title":"Material Characteristics and Applications of Transparent Amorphous Oxide Semiconductors","volume":"2","author":"Kamiya","year":"2010","journal-title":"NPG Asia Mater."},{"key":"2026100705070742200_cit13","doi-asserted-by":"publisher","first-page":"1275","DOI":"10.1109\/TED.2023.3312357","article-title":"Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition","volume":"44","author":"Zhang","year":"2023","journal-title":"IEEE Electron Device Lett."},{"key":"2026100705070742200_cit14","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202201208","article-title":"Exploration of Chemical Composition of In-Ga-Zn-O System via Plasma-Enhanced Atomic Layer Deposition Technique for Optimal Physical and Electrical Properties","volume":"9","author":"Hong","year":"2023","journal-title":"Adv. Electron. Mater."},{"key":"2026100705070742200_cit15","doi-asserted-by":"publisher","first-page":"800","DOI":"10.1038\/s41928-021-00671-0","article-title":"Mobility-Stability Trade-Off in Oxide Thin-Film Transistors","volume":"4","author":"Shiah","year":"2021","journal-title":"Nat. Electron."},{"key":"2026100705070742200_cit16","doi-asserted-by":"publisher","first-page":"62182","DOI":"10.1021\/acsomega.5c09705","article-title":"Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization","volume":"10","author":"Kim","year":"2025","journal-title":"ACS Omega"},{"key":"2026100705070742200_cit17","article-title":"F-Doped InGaO Channel for High-Performance Oxide Semiconductor Transistors and Process Integration Toward DRAM Applications","volume-title":"2023 IEEE International Electron Devices Meeting (IEDM)","author":"Huang","year":"2023"},{"key":"2026100705070742200_cit18","doi-asserted-by":"crossref","first-page":"31.1.1","DOI":"10.1109\/IEDM19574.2021.9720666","article-title":"Understanding and Modelling the PBTI Reliability of Thin-Film IGZO Transistors","volume-title":"2021 IEEE International Electron Devices Meeting (IEDM)","author":"Chasin","year":"2021"},{"key":"2026100705070742200_cit19","doi-asserted-by":"publisher","DOI":"10.3390\/mi10110779","article-title":"Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers","volume":"10","author":"Zhang","year":"2019","journal-title":"Micromachines"},{"key":"2026100705070742200_cit20","doi-asserted-by":"publisher","DOI":"10.1116\/6.0004575","article-title":"Gallium Oxide\/Indium Gallium Zinc Oxide Heterojunction Schottky Barrier Thin-Film Transistors with Ultrahigh 2D Electron Density over 6 \u00d7 1013 cm\u20132","volume":"43","author":"Zhao","year":"2025","journal-title":"J. Vac. Sci. Technol., A"},{"key":"2026100705070742200_cit21","doi-asserted-by":"publisher","DOI":"10.1063\/5.0274282","article-title":"Study of the Interfacial Reaction of High-k Al2O3 Gate Oxides with IGZO","volume":"138","author":"Alshanbari","year":"2025","journal-title":"J. Appl. Phys."},{"key":"2026100705070742200_cit22","doi-asserted-by":"publisher","first-page":"3152","DOI":"10.1109\/TED.2020.3004115","article-title":"Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs with an Etch Stopper","volume":"67","author":"Mativenga","year":"2020","journal-title":"IEEE Trans. Electron Devices"},{"key":"2026100705070742200_cit23","doi-asserted-by":"publisher","DOI":"10.3390\/coatings11101192","article-title":"Quantitative Analysis of PBTS-Induced Electron Trapping in Gate Insulator of Amorphous InGaZnO Thin Film Transistors","volume":"11","author":"Kim","year":"2021","journal-title":"Coatings"},{"key":"2026100705070742200_cit24","doi-asserted-by":"publisher","first-page":"3002","DOI":"10.1109\/ted.2024.3374247","article-title":"The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization","volume":"71","author":"Lin","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"key":"2026100705070742200_cit25","doi-asserted-by":"publisher","DOI":"10.1063\/5.0258105","article-title":"Understanding Negative-Bias-Stress-Induced Instability and Hump Phenomenon in Amorphous In-Ga-Zn-O Thin-Film Transistors: Impact of Source\/Drain Contacts and Carrier Diffusion","volume":"137","author":"Zhang","year":"2025","journal-title":"J. Appl. Phys."},{"key":"2026100705070742200_cit26","doi-asserted-by":"publisher","first-page":"2","DOI":"10.1002\/sia.740010103","article-title":"Quantitative Electron Spectroscopy of Surfaces: A Standard Data Base for Electron Inelastic Mean Free Paths in Solids","volume":"1","author":"Seah","year":"1979","journal-title":"Surf. Interface Anal."},{"key":"2026100705070742200_cit27","doi-asserted-by":"publisher","first-page":"2807","DOI":"10.1021\/acsami.0c16021","article-title":"Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors","volume":"13","author":"Swallow","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026100705070742200_cit28","doi-asserted-by":"publisher","DOI":"10.1116\/1.5141079","article-title":"Practical Guide for Inelastic Mean Free Paths, Effective Attenuation Lengths, Mean Escape Depths, and Information Depths in X-ray Photoelectron Spectroscopy","volume":"38","author":"Powell","year":"2020","journal-title":"J. Vac. Sci. Technol., A"},{"key":"2026100705070742200_cit29","doi-asserted-by":"publisher","first-page":"1585","DOI":"10.1557\/jmr.2014.187","article-title":"Role of Dopants as a Carrier Suppressor and Strong Oxygen Binder in Amorphous Indium-Oxide-Based Field Effect Transistor","volume":"29","author":"Parthiban","year":"2014","journal-title":"J. Mater. Res."},{"key":"2026100705070742200_cit30","doi-asserted-by":"publisher","first-page":"14618","DOI":"10.1038\/s41598-021-94078-8","article-title":"Origin of Light Instability in Amorphous IGZO Thin-Film Transistors and Its Suppression","volume":"11","author":"Mativenga","year":"2021","journal-title":"Sci. Rep."},{"key":"2026100705070742200_cit31","doi-asserted-by":"publisher","DOI":"10.1063\/5.0038416","article-title":"Rational Design of Hydrogen and Nitrogen Co-Doped ZnO for High Performance Thin-Film Transistors","volume":"118","author":"Abliz","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"2026100705070742200_cit32","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.98.245308","article-title":"Electric Field Modified Arrhenius Description of Charge Transport in Amorphous Oxide Semiconductor Thin Film Transistors","volume":"98","author":"Wang","year":"2018","journal-title":"Phys. Rev. B"},{"key":"2026100705070742200_cit33","doi-asserted-by":"publisher","DOI":"10.1063\/5.0231796","article-title":"Investigation of the Electrical Performance and Carrier Transport Mechanism for Heterostructured Bilayer In2O3\/InGaSnO Thin-Film Transistors","volume":"125","author":"Han","year":"2024","journal-title":"Appl. Phys. Lett."},{"key":"2026100705070742200_cit34","doi-asserted-by":"publisher","DOI":"10.1063\/5.0264102","article-title":"Effects of Different Contents Yttrium Doping on the Electrical Performance and Stability of Bilayer IZO\/IYZO Thin-Film Transistors","volume":"126","author":"Ma","year":"2025","journal-title":"Appl. Phys. Lett."},{"key":"2026100705070742200_cit35","doi-asserted-by":"publisher","DOI":"10.1063\/5.0293617","article-title":"Effects of Al Contents on the Electrical Performance and Low-Frequency Noise Properties of InAlZnO Thin-Film Transistors","volume":"127","author":"Zhao","year":"2025","journal-title":"Appl. Phys. Lett."},{"key":"2026100705070742200_cit36","doi-asserted-by":"publisher","first-page":"8393","DOI":"10.1021\/acsaelm.5c01023","article-title":"Identifying the Chemical Structure of Indium\u2013Gallium\u2013Zinc Oxide Thin Films with Oxygen Vacancy Variation","volume":"7","author":"Lee","year":"2025","journal-title":"ACS Appl. Electron. Mater."},{"key":"2026100705070742200_cit37","doi-asserted-by":"publisher","first-page":"5468","DOI":"10.1021\/acs.chemmater.3c00801","article-title":"Interpretation of Oxygen 1s X-ray Photoelectron Spectroscopy of ZnO","volume":"35","author":"Frankcombe","year":"2023","journal-title":"Chem. Mater."}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c14070","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/39\/53644\/68667998\/am-2026-14070h.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/39\/53644\/68667998\/am-2026-14070h.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T09:13:12Z","timestamp":1791364392000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/39\/53644\/5439429\/Ga2O3-Engineered-Buried-Channel-Transport-in"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,26]]},"references-count":37,"journal-issue":{"issue":"39","published-online":{"date-parts":[[2026,9,26]]},"published-print":{"date-parts":[[2026,10,7]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c14070","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,26]]}}}