{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,28]],"date-time":"2026-10-28T09:39:20Z","timestamp":1793180360842,"version":"4.5.0"},"reference-count":59,"publisher":"American Chemical Society (ACS)","issue":"42","license":[{"start":{"date-parts":[[2026,10,19]],"date-time":"2026-10-19T00:00:00Z","timestamp":1792368000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,19]],"date-time":"2026-10-19T00:00:00Z","timestamp":1792368000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,19]],"date-time":"2026-10-19T00:00:00Z","timestamp":1792368000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2025M774305"],"award-info":[{"award-number":["2025M774305"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2026M790028"],"award-info":[{"award-number":["2026M790028"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100005046","name":"Natural Science Foundation of Heilongjiang Province","doi-asserted-by":"publisher","award":["YQ2025E008"],"award-info":[{"award-number":["YQ2025E008"]}],"id":[{"id":"10.13039\/501100005046","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Key Research and Development Program of Henan Province","award":["261111521800"],"award-info":[{"award-number":["261111521800"]}]},{"name":"Key Project of Ministries and Commissions","award":["JZKGJ20240034"],"award-info":[{"award-number":["JZKGJ20240034"]}]},{"name":"National Basic Research Program of China (973 Program)","award":["2022YFF0503600"],"award-info":[{"award-number":["2022YFF0503600"]}]},{"name":"Science and Technology Major Project of Henan Province","award":["231100230300"],"award-info":[{"award-number":["231100230300"]}]},{"name":"Guangdong Provincial Quantum Science Strategic Initiative","award":["GDZX2505002"],"award-info":[{"award-number":["GDZX2505002"]}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["52372043"],"award-info":[{"award-number":["52372043"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["52502039"],"award-info":[{"award-number":["52502039"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,28]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Diamond is promising for solar-blind ultraviolet (SBUV) photodetection in high-temperature extreme environments. However, stable self-powered operation and high-gain response are difficult to reconcile in diamond photodetectors. Photovoltaic diamond photodiodes offer stable zero-bias operation at the expense of limited responsivity, whereas photoconductive-type devices provide gain but often compromise thermal robustness. Here, we introduce transport-pathway engineering in a three-terminal diamond Schottky photodiode to realize dual-mode high-temperature SBUV detection. The device consists of a common Pt\/O-terminated diamond Schottky terminal on a single-crystal boron-doped diamond epitaxial platform, together with a backside ohmic terminal and a coplanar ohmic terminal that share the same diamond drift layer. By selecting the carrier-collection terminal, this three-terminal architecture defines either one-dimensional vertical transport (VT) or mixed vertical\u2013lateral transport (VLT) within a unified diamond Schottky photodiode. From 300 to 580 K, the VT pathway supports low dark current, stable self-powered photovoltaic operation with a root-mean-square current fluctuation of 0.81 fA, whereas the VLT pathway enables high-gain biased detection at elevated temperature. Under 215 nm illumination at 580 K, the high-gain detection mode achieves a responsivity of 919.2 A\u00b7W\u20131 at 10 V and a specific detectivity of 7.72 \u00d7 1013 Jones under the shot-noise-limited approximation. These results demonstrate that transport-pathway engineering provides a route to complementary self-powered photovoltaic and high-gain biased operating modes in thermally robust diamond Schottky photodiodes for high-temperature optoelectronics.<\/jats:p>","DOI":"10.1021\/acsami.6c14102","type":"journal-article","created":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T00:01:39Z","timestamp":1792454499000},"page":"57902-57916","source":"Crossref","is-referenced-by-count":0,"title":["Transport Pathway Engineering in a Three-Terminal Diamond Schottky Photodiode for High-Temperature Dual-Mode Solar-Blind Ultraviolet Detection"],"prefix":"10.1021","volume":"18","author":[{"given":"Yitong","family":"Zheng","sequence":"first","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Saifei","family":"Fan","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bo","family":"Liang","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kang","family":"Zheng","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongda","family":"Zhu","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chenxi","family":"Sun","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chongze","family":"Yue","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Derui","family":"Kong","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sen","family":"Zhang","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Benjian","family":"Liu","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kang","family":"Liu","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2142-7260","authenticated-orcid":true,"given":"Jiaqi","family":"Zhu","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150080"]},{"name":"Harbin Institute of Technology , , ,","place":["Zhengzhou, China, 450046"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,19]]},"reference":[{"issue":"4","key":"2026102805063885200_cit1","doi-asserted-by":"publisher","first-page":"233","DOI":"10.1038\/s41566-019-0359-9","article-title":"The emergence and prospects of deep-ultraviolet light-emitting diode technologies","volume":"13","author":"Kneissl","year":"2019","journal-title":"Nat. Photonics"},{"issue":"5","key":"2026102805063885200_cit2","doi-asserted-by":"publisher","first-page":"67","DOI":"10.1109\/MCOM.2008.4511651","article-title":"Ultraviolet Communications: Potential and State-Of-The-Art","volume":"46","author":"Xu","year":"2008","journal-title":"IEEE Commun. Mag."},{"issue":"46","key":"2026102805063885200_cit3","doi-asserted-by":"publisher","first-page":"64146","DOI":"10.1021\/acsami.4c12680","article-title":"Excellent Wavelength Selectivity of p-AlGaN\/n-Ga2O3 Solar-Blind UVC PD","volume":"16","author":"He","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026102805063885200_cit4","doi-asserted-by":"publisher","DOI":"10.1016\/j.carbon.2025.121082","article-title":"Mechanism analysis of large-scale heteroepitaxial diamond solar-blind ultraviolet photodetectors with ultralow dark current","volume":"248","author":"Zhu","year":"2026","journal-title":"Carbon"},{"issue":"20","key":"2026102805063885200_cit5","doi-asserted-by":"publisher","DOI":"10.1002\/adom.201800359","article-title":"Optoelectronic Diamond: Growth, Properties, and Photodetection Applications","volume":"6","author":"Lu","year":"2018","journal-title":"Adv. Opt. Mater."},{"issue":"6","key":"2026102805063885200_cit6","doi-asserted-by":"publisher","first-page":"479","DOI":"10.1016\/S1567-1739(01)00061-X","article-title":"CVD diamond films: from growth to applications","volume":"1","author":"Gicquel","year":"2001","journal-title":"Curr. Appl. Phys."},{"issue":"42","key":"2026102805063885200_cit7","doi-asserted-by":"publisher","first-page":"58983","DOI":"10.1021\/acsami.5c17069","article-title":"Narrowband Deep UV Sensor on CVD-Grown Diamond Epilayers","volume":"17","author":"Rautela","year":"2025","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"2","key":"2026102805063885200_cit8","doi-asserted-by":"publisher","first-page":"303","DOI":"10.1016\/j.asr.2005.10.041","article-title":"LYRA, a solar UV radiometer on Proba2","volume":"37","author":"Hochedez","year":"2006","journal-title":"Adv. Space Res."},{"issue":"2","key":"2026102805063885200_cit9","doi-asserted-by":"publisher","DOI":"10.1063\/1.1992660","article-title":"Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact","volume":"87","author":"Liao","year":"2005","journal-title":"Appl. Phys. Lett."},{"issue":"12","key":"2026102805063885200_cit10","doi-asserted-by":"publisher","DOI":"10.1063\/1.2715440","article-title":"Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamond","volume":"90","author":"Liao","year":"2007","journal-title":"Appl. Phys. Lett."},{"issue":"12","key":"2026102805063885200_cit11","doi-asserted-by":"publisher","first-page":"5996","DOI":"10.1021\/acsaelm.2c01164","article-title":"Self-Powered Solar-Blind UV Detectors Based on O-Terminated Vertical Diamond Schottky Diode with Low Dark Current, High Detectivity, and High Signal-to-Noise Ratio","volume":"4","author":"Liu","year":"2022","journal-title":"ACS Appl. Electron. Mater."},{"issue":"7","key":"2026102805063885200_cit12","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202402601","article-title":"Ultrafast Diamond Photodiodes for Vacuum Ultraviolet Imaging in Space-Based Applications","volume":"13","author":"Jia","year":"2025","journal-title":"Adv. Opt. Mater."},{"key":"2026102805063885200_cit13","doi-asserted-by":"publisher","first-page":"510","DOI":"10.1016\/j.carbon.2022.09.001","article-title":"High performance diamond-based solar-blind photodetectors enabled by Schottky barrier modulation","volume":"200","author":"Lin","year":"2022","journal-title":"Carbon"},{"issue":"14","key":"2026102805063885200_cit14","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202420238","article-title":"Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep-Ultraviolet Photodetector with Low-Voltage Operation","volume":"35","author":"Gu","year":"2025","journal-title":"Adv. Funct. Mater."},{"issue":"18","key":"2026102805063885200_cit15","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.87.186103","article-title":"Copper\/Diamond Adhesion and Hydrogen Termination","volume":"87","author":"Wang","year":"2001","journal-title":"Phys. Rev. Lett."},{"issue":"12","key":"2026102805063885200_cit16","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.69.125338","article-title":"Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum","volume":"69","author":"Riedel","year":"2004","journal-title":"Phys. Rev. B"},{"issue":"22","key":"2026102805063885200_cit17","doi-asserted-by":"publisher","DOI":"10.1063\/5.0274650","article-title":"Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator","volume":"126","author":"Gu","year":"2025","journal-title":"Appl. Phys. Lett."},{"issue":"1","key":"2026102805063885200_cit18","doi-asserted-by":"publisher","first-page":"6935","DOI":"10.1038\/s41467-023-42742-0","article-title":"Organic photodiodes with bias-switchable photomultiplication and photovoltaic modes","volume":"14","author":"Liu","year":"2023","journal-title":"Nat. Commun."},{"issue":"15","key":"2026102805063885200_cit19","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202500491","article-title":"Bias-Switchable Photomultiplication and Photovoltaic Dual-Mode Near-Infrared Organic Photodetector","volume":"37","author":"Huang","year":"2025","journal-title":"Adv. Mater."},{"issue":"50","key":"2026102805063885200_cit20","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202510929","article-title":"Self-Biased Phototransistor with Both Ultralow Dark Current and Fast Response","volume":"35","author":"Luo","year":"2025","journal-title":"Adv. Funct. Mater."},{"issue":"1","key":"2026102805063885200_cit21","doi-asserted-by":"publisher","first-page":"273","DOI":"10.1038\/s41377-025-01991-y","article-title":"A dual-mode transparent device for 360 quasi-omnidirectional self-driven photodetection and efficient ultralow-power neuromorphic computing","volume":"14","author":"Jiang","year":"2025","journal-title":"Light Sci. Appl."},{"issue":"32","key":"2026102805063885200_cit22","doi-asserted-by":"publisher","first-page":"45888","DOI":"10.1021\/acsami.5c10140","article-title":"Outperforming Transparent Ultraviolet Photodetectors Based on the AlGaN\/GaN High Electron Mobility Transistor on SiC","volume":"17","author":"Mondal","year":"2025","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026102805063885200_cit23","doi-asserted-by":"publisher","first-page":"279","DOI":"10.1038\/s41928-024-01142-y","article-title":"A Three-Terminal Light Emitting and Detecting Diode","volume":"7","author":"Memon","year":"2024","journal-title":"Nat. Electron."},{"key":"2026102805063885200_cit24","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202405874","article-title":"Superior AlGaN\/GaN-Based Phototransistors and Arrays with Reconfigurable Triple-Mode Functionalities Enabled by Voltage-Programmed Two-Dimensional Electron Gas for High-Quality Imaging","volume":"36","author":"Zhang","year":"2024","journal-title":"Adv. Mater."},{"issue":"1","key":"2026102805063885200_cit25","doi-asserted-by":"publisher","first-page":"220","DOI":"10.1007\/s40820-025-01746-9","article-title":"Single-Crystal Diamond Nanowires Embedded with Platinum Nanoparticles for High-Temperature Solar-Blind Photodetector","volume":"17","author":"Lu","year":"2025","journal-title":"Nano-Micro Lett."},{"issue":"11","key":"2026102805063885200_cit26","doi-asserted-by":"publisher","first-page":"2062","DOI":"10.1109\/LED.2024.3458053","article-title":"Record Low Contact Resistivity of 10\u20138 \u03a9 cm2 Ohmic Contacts on Oxygen-Terminated Intrinsic Diamond by Transition Metals Metallization","volume":"45","author":"Fan","year":"2024","journal-title":"IEEE Electron Device Lett."},{"issue":"6","key":"2026102805063885200_cit27","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202415109","article-title":"Microscopic Insights into Metallization of Diamond with Transition Metals","volume":"35","author":"Fan","year":"2025","journal-title":"Adv. Funct. Mater."},{"key":"2026102805063885200_cit28","doi-asserted-by":"publisher","DOI":"10.1016\/j.vacuum.2024.113446","article-title":"Interfacial improvement of diamond through epitaxial lateral overgrowth with periodic Ir\/SiO2\/Ir stripe mask","volume":"227","author":"Zhu","year":"2024","journal-title":"Vacuum"},{"issue":"4","key":"2026102805063885200_cit29","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.79.045206","article-title":"Electronic and optical properties of boron-doped nanocrystalline diamond films","volume":"79","author":"Gajewski","year":"2009","journal-title":"Phys. Rev. B"},{"key":"2026102805063885200_cit30","doi-asserted-by":"publisher","DOI":"10.1016\/j.carbon.2025.120813","article-title":"Comprehensive performance analysis of diamond Schottky diodes with argon-ion-modified oxygen-terminated surfaces","volume":"245","author":"Liang","year":"2025","journal-title":"Carbon"},{"key":"2026102805063885200_cit31","doi-asserted-by":"publisher","first-page":"60","DOI":"10.35848\/1347-4065\/abf2a7","article-title":"Effects of incomplete ionization on forward current\u2013voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation","author":"Seok","year":"2021","journal-title":"Jpn. J. Appl. Phys."},{"key":"2026102805063885200_cit32","doi-asserted-by":"publisher","first-page":"292","DOI":"10.1016\/j.carbon.2022.06.040","article-title":"High temperature operation of logic AND gate based on diamond Schottky diodes fabricated by selective growth method","volume":"197","author":"Liu","year":"2022","journal-title":"Carbon"},{"issue":"2","key":"2026102805063885200_cit33","doi-asserted-by":"publisher","first-page":"85","DOI":"10.1063\/1.97359","article-title":"Extraction of Schottky diode parameters from forward current-voltage characteristics","volume":"49","author":"Cheung","year":"1986","journal-title":"Appl. Phys. Lett."},{"key":"2026102805063885200_cit34","volume-title":"High power diamond Schottky diode","author":"Traor\u00e9","year":"2014"},{"issue":"3","key":"2026102805063885200_cit35","doi-asserted-by":"publisher","first-page":"1522","DOI":"10.1063\/1.347243","article-title":"Barrier inhomogeneities at Schottky contacts","volume":"69","author":"Werner","year":"1991","journal-title":"J. Appl. Phys."},{"key":"2026102805063885200_cit36","volume-title":"Physics of Semiconductor Devices","author":"Sze","year":"2021","edition":"4"},{"issue":"24","key":"2026102805063885200_cit37","doi-asserted-by":"publisher","first-page":"4367","DOI":"10.1063\/1.1583868","article-title":"Temperature dependence on current\u2013voltage characteristics of nickel\/diamond Schottky diodes on high quality boron-doped homoepitaxial diamond film","volume":"82","author":"Chen","year":"2003","journal-title":"Appl. Phys. Lett."},{"issue":"3","key":"2026102805063885200_cit38","doi-asserted-by":"publisher","first-page":"657","DOI":"10.1103\/PhysRev.155.657","article-title":"Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal Systems","volume":"155","author":"Simmons","year":"1967","journal-title":"Phys. Rev."},{"issue":"8","key":"2026102805063885200_cit39","doi-asserted-by":"publisher","first-page":"647","DOI":"10.1103\/PhysRev.54.647","article-title":"On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors","volume":"54","author":"Frenkel","year":"1938","journal-title":"Phys. Rev."},{"issue":"6","key":"2026102805063885200_cit40","doi-asserted-by":"publisher","first-page":"1648","DOI":"10.1103\/PhysRev.103.1648","article-title":"Simplified Theory of Space-Charge-Limited Currents in an Insulator with Traps","volume":"103","author":"Lampert","year":"1956","journal-title":"Phys. Rev."},{"issue":"2","key":"2026102805063885200_cit41","doi-asserted-by":"publisher","first-page":"331","DOI":"10.1109\/16.121690","article-title":"A new recombination model for device simulation including tunneling","volume":"39","author":"Hurkx","year":"1992","journal-title":"IEEE Trans. Electron Devices"},{"issue":"25","key":"2026102805063885200_cit42","doi-asserted-by":"publisher","first-page":"8848","DOI":"10.1039\/C7NR03437G","article-title":"Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film\/SiO2\/p-Si heterojunction","volume":"9","author":"Ling","year":"2017","journal-title":"Nanoscale"},{"issue":"7","key":"2026102805063885200_cit43","doi-asserted-by":"publisher","first-page":"443","DOI":"10.1038\/s41928-022-00779-x","article-title":"A near-infrared colloidal quantum dot imager with monolithically integrated readout circuitry","volume":"5","author":"Liu","year":"2022","journal-title":"Nat. Electron."},{"issue":"4","key":"2026102805063885200_cit44","doi-asserted-by":"publisher","first-page":"1698","DOI":"10.1364\/PRJ.587213","article-title":"High-performance tellurium films with engineered ordered texture: synergistic enhancement of carrier mobility and stability","volume":"14","author":"Li","year":"2026","journal-title":"Photonics Res."},{"issue":"5","key":"2026102805063885200_cit45","doi-asserted-by":"publisher","DOI":"10.1002\/cey2.70001","article-title":"Tailoring a Back-Contact Barrier for a Self-Powered Broadband Kesterite Photodetector With Ultralow Dark Current Enabling Ultra-Weak-Light Detection","volume":"7","author":"Wu","year":"2025","journal-title":"Carbon Energy"},{"key":"2026102805063885200_cit46","doi-asserted-by":"publisher","DOI":"10.1063\/5.0083171","article-title":"Temperature-Dependent Photodetection Behavior of AlGaN\/GaN-Based Ultraviolet Phototransistors","volume":"120","author":"Yang","year":"2022","journal-title":"Appl. Phys. Lett."},{"key":"2026102805063885200_cit47","doi-asserted-by":"publisher","DOI":"10.1016\/j.photonics.2020.100887","article-title":"Study of temperature dependent behavior of h-BN nanoflakes based deep UV photodetector","volume":"43","author":"Kaushik","year":"2021","journal-title":"Photonics Nanostructures: Fundam. Appl."},{"key":"2026102805063885200_cit48","doi-asserted-by":"publisher","DOI":"10.1016\/j.carbon.2025.120130","article-title":"Enhancement of high-temperature solar-blind UV photodetector performance on 4H\u2013SiC substrates by deposition of ultrawide bandgap diamond films","volume":"237","author":"Huang","year":"2025","journal-title":"Carbon"},{"issue":"4","key":"2026102805063885200_cit49","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/abe42c","article-title":"Amorphous gallium oxide (a-Ga2O3)-based high-temperature bendable solar-blind ultraviolet photodetector","volume":"36","author":"Xiong","year":"2021","journal-title":"Semicond. Sci. Technol."},{"key":"2026102805063885200_cit50","doi-asserted-by":"publisher","DOI":"10.1016\/j.mattod.2026.103220","article-title":"Solar-blind deep UV photodetector based on \u03b2-Ga2O3\/AlN\/p-Si nBp tunneling photodiode for extreme temperature applications","volume":"93","author":"Gao","year":"2026","journal-title":"Mater. Today"},{"issue":"12","key":"2026102805063885200_cit51","doi-asserted-by":"publisher","first-page":"2121","DOI":"10.1109\/LED.2022.3214981","article-title":"High-temperature deep ultraviolet photodetector based on a crystalline Ga2O3-diamond heterostructure","volume":"43","author":"Wang","year":"2022","journal-title":"IEEE Electron Device Lett."},{"issue":"14","key":"2026102805063885200_cit52","doi-asserted-by":"publisher","DOI":"10.1063\/1.5088532","article-title":"High-temperature photocurrent mechanism of \u03b2-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors","volume":"125","author":"Tak","year":"2019","journal-title":"J. Appl. Phys."},{"key":"2026102805063885200_cit53","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202106923","article-title":"High-Performance Harsh-Environment-Resistant GaOx Solar-Blind Photodetectors via Defect and Doping Engineering","volume":"34","author":"Hou","year":"2022","journal-title":"Adv. Mater."},{"issue":"11","key":"2026102805063885200_cit54","doi-asserted-by":"publisher","first-page":"5662","DOI":"10.1109\/TED.2021.3113296","article-title":"Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 \u00b0C and High Responsivity","volume":"68","author":"Du","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"issue":"17","key":"2026102805063885200_cit55","doi-asserted-by":"publisher","first-page":"911","DOI":"10.1109\/LPT.2022.3193501","article-title":"Fabrication High-Temperature 4H-SiC Schottky UV Photodiodes by O2 Plasma Pre-Treatment Technology","volume":"34","author":"Du","year":"2022","journal-title":"IEEE Photonics Technol. Lett."},{"issue":"18","key":"2026102805063885200_cit56","doi-asserted-by":"publisher","first-page":"8348","DOI":"10.1021\/acsaelm.5c00774","article-title":"Robust Self-Powered UV Detector Based on a h-ZnTiO3:Ta\/p-GaN Epitaxial Heterojunction for High-Temperature Application","volume":"7","author":"Zhang","year":"2025","journal-title":"ACS Appl. Electron. Mater."},{"issue":"5","key":"2026102805063885200_cit57","doi-asserted-by":"publisher","first-page":"737","DOI":"10.1109\/LED.2023.3262755","article-title":"Self-Powered p-GaN\/i-ZnGa2O4\/n-ITO Heterojunction Broadband Ultraviolet Photodetector With High Working Temperature","volume":"44","author":"Zhu","year":"2023","journal-title":"IEEE Electron Device Lett."},{"issue":"1","key":"2026102805063885200_cit58","doi-asserted-by":"publisher","DOI":"10.1063\/5.0054612","article-title":"Temperature enhanced responsivity and speed in an AlGaN\/GaN metal-heterostructure-metal photodetector","volume":"119","author":"Tang","year":"2021","journal-title":"Appl. Phys. Lett."},{"issue":"1","key":"2026102805063885200_cit59","doi-asserted-by":"publisher","first-page":"4372","DOI":"10.1038\/s41467-022-32062-0","article-title":"High-temperature flexible WSe2 photodetectors with ultrahigh photoresponsivity","volume":"13","author":"Zou","year":"2022","journal-title":"Nat. Commun."}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c14102","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/42\/57902\/68908184\/am-2026-14102y.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/42\/57902\/68908184\/am-2026-14102y.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,28]],"date-time":"2026-10-28T09:23:54Z","timestamp":1793179434000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/42\/57902\/5454020\/Transport-Pathway-Engineering-in-a-Three-Terminal"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,19]]},"references-count":59,"journal-issue":{"issue":"42","published-online":{"date-parts":[[2026,10,19]]},"published-print":{"date-parts":[[2026,10,28]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c14102","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,19]]}}}