{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,29]],"date-time":"2026-10-29T19:34:54Z","timestamp":1793302494262,"version":"4.5.0"},"reference-count":36,"publisher":"American Chemical Society (ACS)","issue":"42","license":[{"start":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T00:00:00Z","timestamp":1792022400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T00:00:00Z","timestamp":1792022400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T00:00:00Z","timestamp":1792022400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100003836","name":"IC Design Education Center","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003836","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2024-00405200"],"award-info":[{"award-number":["RS-2024-00405200"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2024-00450836"],"award-info":[{"award-number":["RS-2024-00450836"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,28]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>HfO2-derived ferroelectric field-effect transistors (FeFETs) are promising for nonvolatile memory and logic-in-memory applications owing to CMOS compatibility and low-voltage polarization switching. Amorphous InGaZnO (a-IGZO) is attractive for back-end-of-line compatible FeFETs, but inverted bottom-gate devices suffer from incomplete switching under negative gate bias, especially in the nonoverlap metal\/ferroelectric\/semiconductor (MFS) region where depleted a-IGZO becomes effectively floating and weakens voltage coupling across HfZrOx (HZO). Here, we demonstrate oxygen vacancy (VO)-mediated activation of negative-bias switching in a-IGZO FeFETs. The oxygen-deficient state of the bottom a-IGZO layer was controlled by sputtering oxygen flow ratio and rapid thermal annealing oxygen partial pressure. Depth-profile X-ray photoelectron spectroscopy confirms VO modulation near the a-IGZO\/HZO interface. Positive-up-negative-down measurements and area-engineered capacitor test element groups show that VO-rich a-IGZO enhances reversible MFS switching by supplying compensating positive charge under depletion, thereby enlarging the memory window and improving switching behavior. This approach directly mitigates geometry-induced switching loss in practical oxide-semiconductor FeFET architecture.<\/jats:p>","DOI":"10.1021\/acsami.6c15029","type":"journal-article","created":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T21:01:32Z","timestamp":1792098092000},"page":"58600-58608","source":"Crossref","is-referenced-by-count":0,"title":["Oxygen Vacancy Engineering for Enhanced Remanent Polarization and Memory Window in a-IGZO\/HZO Ferroelectric Field-Effect Transistors"],"prefix":"10.1021","volume":"18","author":[{"given":"Hyojin","family":"Yang","sequence":"first","affiliation":[{"name":"Yonsei University , , ,","place":["Seoul, Republic of Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hwan Jin","family":"Kim","sequence":"additional","affiliation":[{"name":"Kookmin University , , ,","place":["Seoul, Republic of Korea, 02707"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haneul","family":"Lee","sequence":"additional","affiliation":[{"name":"Yonsei University , , ,","place":["Seoul, Republic of Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2567-4012","authenticated-orcid":true,"given":"Dae Hwan","family":"Kim","sequence":"additional","affiliation":[{"name":"Kookmin University , , ,","place":["Seoul, Republic of Korea, 02707"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1301-2847","authenticated-orcid":true,"given":"Sung-Jin","family":"Choi","sequence":"additional","affiliation":[{"name":"Kookmin University , , ,","place":["Seoul, Republic of Korea, 02707"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dong Myong","family":"Kim","sequence":"additional","affiliation":[{"name":"Kookmin University , , ,","place":["Seoul, Republic of Korea, 02707"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-8781-6631","authenticated-orcid":true,"given":"Yoon Jung","family":"Lee","sequence":"additional","affiliation":[{"name":"Kookmin University , , ,","place":["Seoul, Republic of Korea, 02707"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Min-Kyu","family":"Park","sequence":"additional","affiliation":[{"name":"Gachon University , , , ,","place":["Seongnam City, Gyeonggi, Republic of Korea, 13120"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sung Yun","family":"Woo","sequence":"additional","affiliation":[{"name":"Kyungpook National University , , ,","place":["Daegu, Republic of Korea, 41566"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3392-9444","authenticated-orcid":true,"given":"Haesung","family":"Kim","sequence":"additional","affiliation":[{"name":"Purdue University , , ,","place":["West Lafayette, IN, United States, 47907"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1786-7132","authenticated-orcid":true,"given":"Jong-Ho","family":"Bae","sequence":"additional","affiliation":[{"name":"Yonsei University , , ,","place":["Seoul, Republic of Korea, 03722"]},{"name":"Yonsei University , , ,","place":["Seoul, Republic of Korea, 03722"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,15]]},"reference":[{"key":"2026102915065416100_cit1","doi-asserted-by":"publisher","first-page":"588","DOI":"10.1038\/s41928-020-00492-7","article-title":"The Future of Ferroelectric Field-Effect Transistor Technology","volume":"3","author":"Khan","year":"2020","journal-title":"Nat. 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Mater."},{"key":"2026102915065416100_cit25","doi-asserted-by":"publisher","first-page":"717","DOI":"10.1109\/JEDS.2020.3008789","article-title":"Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application","volume":"8","author":"Mo","year":"2020","journal-title":"IEEE J. Electron Devices Soc."},{"key":"2026102915065416100_cit26","doi-asserted-by":"publisher","first-page":"2034","DOI":"10.1021\/acsnano.5c14197","article-title":"Metal-Induced Oxygen Vacancy Control in InGaZnO\/Hf0.5Zr05O2 Ferroelectric Field-Effect Transistor Arrays for Simultaneous Improvement of Memory Window and Electrical Stability","volume":"20","author":"Han","year":"2026","journal-title":"ACS Nano"},{"key":"2026102915065416100_cit27","doi-asserted-by":"publisher","DOI":"10.1002\/advs.201801189","article-title":"Analysis of Ultrahigh Apparent Mobility in Oxide Field-Effect Transistors","volume":"6","author":"Chen","year":"2019","journal-title":"Adv. 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Soc."},{"key":"2026102915065416100_cit31","doi-asserted-by":"publisher","first-page":"8393","DOI":"10.1021\/acsaelm.5c01023","article-title":"Identifying the Chemical Structure of Indium\u2013Gallium\u2013Zinc Oxide Thin Films with Oxygen Vacancy Variation","volume":"7","author":"Lee","year":"2025","journal-title":"ACS Appl. Electron. Mater."},{"key":"2026102915065416100_cit32","doi-asserted-by":"publisher","first-page":"5468","DOI":"10.1021\/acs.chemmater.3c00801","article-title":"Interpretation of Oxygen 1s X-Ray Photoelectron Spectroscopy of ZnO","volume":"35","author":"Frankcombe","year":"2023","journal-title":"Chem. 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Status Solidi A"}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c15029","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/42\/58600\/68877958\/am-2026-15029u.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/18\/42\/58600\/68877958\/am-2026-15029u.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,29]],"date-time":"2026-10-29T19:29:49Z","timestamp":1793302189000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/42\/58600\/5452240\/Oxygen-Vacancy-Engineering-for-Enhanced-Remanent"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,15]]},"references-count":36,"journal-issue":{"issue":"42","published-online":{"date-parts":[[2026,10,15]]},"published-print":{"date-parts":[[2026,10,28]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c15029","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,15]]}}}