{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,28]],"date-time":"2026-10-28T09:40:08Z","timestamp":1793180408219,"version":"4.5.0"},"reference-count":43,"publisher":"American Chemical Society (ACS)","issue":"42","license":[{"start":{"date-parts":[[2026,10,17]],"date-time":"2026-10-17T00:00:00Z","timestamp":1792195200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,17]],"date-time":"2026-10-17T00:00:00Z","timestamp":1792195200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,17]],"date-time":"2026-10-17T00:00:00Z","timestamp":1792195200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"name":"Anhui Department of Education","award":["2024AH030004"],"award-info":[{"award-number":["2024AH030004"]}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["12204003"],"award-info":[{"award-number":["12204003"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["12574182"],"award-info":[{"award-number":["12574182"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["52203289"],"award-info":[{"award-number":["52203289"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,28]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>The ongoing miniaturization and function diversification of the Internet of Things (IoT) devices necessitate a paradigm shift beyond the inherent constraints of conventional complementary metal-oxide-semiconductor (CMOS) technology. Although reconfigurable devices represent a compelling alternative, their widespread implementation remains obstructed by the architectural complexity and stringent nanofabrication processes. Herein, we report a coplanar dual-side-gate (SG) reconfigurable logic gate constructed from typical one-dimensional (1D) van der Waals materials (vdWM), including n-type Ta2Pd3Se8 and Nb2Pd1\u2013xSe5, and p-type Ta2Pt3Se8. Leveraging its outstanding electrostatic tunability and superior gate control efficiency, we achieve precise carrier-density modulation within a single 1D vdWM device. Remarkably, this single device is capable of performing six fundamental Boolean logic operations: AND, NAND, OR, NOR, XNOR, and INHIBIT. In contrast to traditional CMOS implementations, this strategy could reduce the required transistor count and enhance integration density. Furthermore, we extend the functionality of this platform to reconfigurable multi-valued logic (RMVL) and cryptographic applications, demonstrating robust ASCII code translation as well as secure QR code encryption and decryption via XNOR-based logic. These findings highlight the potential of coplanar dual-SG devices based on 1D vdWM as a viable routine toward next-generation multifunctional and reconfigurable integrated circuits.<\/jats:p>","DOI":"10.1021\/acsami.6c15155","type":"journal-article","created":{"date-parts":[[2026,10,17]],"date-time":"2026-10-17T15:06:10Z","timestamp":1792249570000},"page":"57937-57945","source":"Crossref","is-referenced-by-count":0,"title":["Coplanar Dual-Side-Gated One-Dimensional Van der Waals Materials for Reconfigurable Logic Circuits"],"prefix":"10.1021","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1901-7892","authenticated-orcid":true,"given":"Wei","family":"Gan","sequence":"first","affiliation":[{"name":"Anhui University , , ,","place":["Hefei, China, 230601"]},{"name":"University of Science and Technology of China , , ,","place":["Hefei, China, 230026"]},{"name":"China-Europe Electronic Materials International Innovation Center (Hefei) Co., Ltd. , ,","place":["Hefei, China, 230088"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiaoqiao","family":"Ye","sequence":"additional","affiliation":[{"name":"Anhui University , , ,","place":["Hefei, China, 230601"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingyao","family":"Zhang","sequence":"additional","affiliation":[{"name":"Anhui University , , ,","place":["Hefei, China, 230601"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7072-9003","authenticated-orcid":true,"given":"Zhen","family":"Wang","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Technical Physics, Chinese Academy of Sciences , , ,","place":["Shanghai, China, 200083"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0585-8519","authenticated-orcid":true,"given":"Li","family":"Song","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, China, 230029"]},{"name":"Zhejiang Institute of Photonelectronics , , ,","place":["Jinhua, Zhejiang, China, 321004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaolong","family":"Zhao","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhiheng","family":"Liu","sequence":"additional","affiliation":[{"name":"Anhui University , , ,","place":["Hefei, China, 230039"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3721-2678","authenticated-orcid":true,"given":"Yi","family":"Gong","sequence":"additional","affiliation":[{"name":"China-Europe Electronic Materials International Innovation Center (Hefei) Co., Ltd. , ,","place":["Hefei, China, 230088"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hui","family":"Li","sequence":"additional","affiliation":[{"name":"Anhui University , , ,","place":["Hefei, China, 230601"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8549-9685","authenticated-orcid":true,"given":"Chuanqiang","family":"Wu","sequence":"additional","affiliation":[{"name":"Anhui University , , ,","place":["Hefei, China, 230601"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9588-5491","authenticated-orcid":true,"given":"Xue","family":"Liu","sequence":"additional","affiliation":[{"name":"Anhui University , , ,","place":["Hefei, China, 230601"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,17]]},"reference":[{"key":"2026102805064848100_cit1","doi-asserted-by":"publisher","first-page":"522","DOI":"10.1021\/acsnano.5c13793","article-title":"Current Rectification in a Sub-2 nm CNT\/V-Doped WS2\/MoS2\/CNT Vertical Monolayer P-N Diode","volume":"20","author":"Do","year":"2026","journal-title":"ACS Nano"},{"key":"2026102805064848100_cit2","doi-asserted-by":"publisher","first-page":"5781","DOI":"10.1021\/acsnano.5c17678","article-title":"Reconfigurable Dual-Terminal WSe2\/h-BN P-N Photodetectors for in-Sensor Red-Green-Blue Convolution and Motion Detection","volume":"20","author":"Dou","year":"2026","journal-title":"ACS Nano"},{"key":"2026102805064848100_cit3","doi-asserted-by":"publisher","first-page":"987","DOI":"10.1021\/acsnano.5c16443","article-title":"Bandgap Gradient Nanowire Photodetectors for Logic Gates and Encrypted Optical 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