{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T10:51:09Z","timestamp":1791975069295,"version":"4.4.0"},"reference-count":57,"publisher":"American Chemical Society (ACS)","issue":"40","license":[{"start":{"date-parts":[[2026,10,2]],"date-time":"2026-10-02T00:00:00Z","timestamp":1790899200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,2]],"date-time":"2026-10-02T00:00:00Z","timestamp":1790899200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,2]],"date-time":"2026-10-02T00:00:00Z","timestamp":1790899200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12174444"],"award-info":[{"award-number":["12174444"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52373231"],"award-info":[{"award-number":["52373231"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,14]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Contact resistance remains a primary bottleneck in two-dimensional (2D) semiconductor field-effect transistors (FETs), yet the concurrent influence of metal work function, adhesion, and deposition temperature obscures the underlying mechanisms. Here, using bilayer MoS2 as a model system, we systematically benchmark four metals (In, Bi, Ti, Pd) and discover that the metal melting point, which sets the deposition thermal budget, is strongly correlated with interface integrity. Low-melting-point metals (Bi, In) preserve an intact van der Waals gap (\u22480.3 nm), whereas high-melting-point metals (Ti, Pd) damage the interface and collapse the gap to \u22480.19 nm (Pd) or destroy it entirely (Ti), as revealed by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Despite Fermi-level pinning rendering all devices n-type, Pd outperforms Ti in contact resistance, underscoring the primacy of interface quality over work function alignment. Remarkably, Bi, despite its higher melting point and work function than In, delivers the lowest contact resistance (\u22480.14 k\u03a9\u00b7\u03bcm) and highest on-state current (\u2248525 \u03bcA\u00b7\u03bcm\u20131 at Lch = 100 nm), which we attribute to its semi-metallic band structure that suppresses metal-induced gap states. This work establishes a design rule of contact metals for n-type MoS2 FETs: low work function, low deposition temperature, and low density of states, which is expected to extend to other 2D semiconductor nanoelectronics and integrated circuits.<\/jats:p>","DOI":"10.1021\/acsami.6c15768","type":"journal-article","created":{"date-parts":[[2026,10,2]],"date-time":"2026-10-02T09:01:33Z","timestamp":1790931693000},"page":"55170-55179","source":"Crossref","is-referenced-by-count":0,"title":["Decoupling Thermal and Electronic Effects of Metal Contacts in Bilayer MoS2 Transistors"],"prefix":"10.1021","volume":"18","author":[{"given":"Ziming","family":"Xu","sequence":"first","affiliation":[{"name":"National University of Defense Technology , , ,","place":["Changsha, China, 410073"]},{"name":"National University of Defense Technology , , ,","place":["Changsha, China, 410073"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenqin","family":"Zhao","sequence":"additional","affiliation":[{"name":"National University of Defense Technology , , ,","place":["Changsha, China, 410073"]},{"name":"National University of Defense Technology , , ,","place":["Changsha, China, 410073"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5580-0043","authenticated-orcid":true,"given":"Roger","family":"Guzman","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 101408"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jin-An","family":"Shi","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 101408"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Miaomiao","family":"Li","sequence":"additional","affiliation":[{"name":"National University of Defense Technology , , ,","place":["Changsha, China, 410073"]},{"name":"National University of Defense Technology , , ,","place":["Changsha, China, 410073"]},{"name":"Ningxia University , , ,","place":["Yinchuan, China, 750021"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wu","family":"Zhou","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 101408"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7863-2660","authenticated-orcid":true,"given":"Mengjian","family":"Zhu","sequence":"additional","affiliation":[{"name":"National University of Defense Technology , , ,","place":["Changsha, China, 410073"]},{"name":"National University of Defense Technology , , ,","place":["Changsha, China, 410073"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,2]]},"reference":[{"issue":"7974","key":"2026101406073869600_cit1","doi-asserted-by":"publisher","first-page":"501","DOI":"10.1038\/s41586-023-06145-x","article-title":"The future transistors","volume":"620","author":"Cao","year":"2023","journal-title":"Nature"},{"issue":"7","key":"2026101406073869600_cit2","doi-asserted-by":"publisher","first-page":"895","DOI":"10.1038\/s41565-024-01695-1","article-title":"The future of two-dimensional semiconductors beyond Moore\u2019s law","volume":"19","author":"Kim","year":"2024","journal-title":"Nat. Nanotechnol."},{"issue":"7848","key":"2026101406073869600_cit3","doi-asserted-by":"publisher","first-page":"43","DOI":"10.1038\/s41586-021-03339-z","article-title":"Promises and prospects of two-dimensional transistors","volume":"591","author":"Liu","year":"2021","journal-title":"Nature"},{"issue":"3","key":"2026101406073869600_cit4","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1038\/nnano.2010.279","article-title":"Single-layer MoS2 transistors","volume":"6","author":"Radisavljevic","year":"2011","journal-title":"Nat. Nanotechnol."},{"issue":"9","key":"2026101406073869600_cit5","doi-asserted-by":"publisher","first-page":"3768","DOI":"10.1021\/nl2018178","article-title":"How Good Can Monolayer MoS2 Transistors Be?","volume":"11","author":"Yoon","year":"2011","journal-title":"Nano Lett."},{"issue":"6308","key":"2026101406073869600_cit6","doi-asserted-by":"publisher","first-page":"99","DOI":"10.1126\/science.aah4698","article-title":"MoS2 transistors with 1-nanometer gate lengths","volume":"354","author":"Desai","year":"2016","journal-title":"Science"},{"issue":"7900","key":"2026101406073869600_cit7","doi-asserted-by":"publisher","first-page":"259","DOI":"10.1038\/s41586-021-04323-3","article-title":"Vertical MoS2 transistors with sub-1-nm gate lengths","volume":"603","author":"Wu","year":"2022","journal-title":"Nature"},{"issue":"9","key":"2026101406073869600_cit8","doi-asserted-by":"publisher","first-page":"4674","DOI":"10.1021\/nl302015v","article-title":"Integrated Circuits Based on Bilayer MoS2 Transistors","volume":"12","author":"Wang","year":"2012","journal-title":"Nano Lett."},{"issue":"12","key":"2026101406073869600_cit9","doi-asserted-by":"publisher","first-page":"8000","DOI":"10.1021\/acs.nanolett.5b03218","article-title":"Electrically Tunable Bandgaps in Bilayer MoS2","volume":"15","author":"Chu","year":"2015","journal-title":"Nano Lett."},{"issue":"7908","key":"2026101406073869600_cit10","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1038\/s41586-022-04523-5","article-title":"Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire","volume":"605","author":"Liu","year":"2022","journal-title":"Nature"},{"issue":"1","key":"2026101406073869600_cit11","doi-asserted-by":"publisher","first-page":"598","DOI":"10.1038\/s41467-019-08468-8","article-title":"Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy","volume":"10","author":"Zhang","year":"2019","journal-title":"Nat. Commun."},{"issue":"12","key":"2026101406073869600_cit12","doi-asserted-by":"publisher","first-page":"1128","DOI":"10.1038\/nmat4080","article-title":"Phase-engineered low-resistance contacts for ultrathin MoS2 transistors","volume":"13","author":"Kappera","year":"2014","journal-title":"Nat. Mater."},{"issue":"7858","key":"2026101406073869600_cit13","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1038\/s41586-021-03472-9","article-title":"Ultralow contact resistance between semimetal and monolayer semiconductors","volume":"593","author":"Shen","year":"2021","journal-title":"Nature"},{"key":"2026101406073869600_cit14","doi-asserted-by":"publisher","first-page":"545","DOI":"10.1038\/s41928-024-01176-2","article-title":"Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors","volume":"7","author":"Jiang","year":"2024","journal-title":"Nat. Electron."},{"issue":"7943","key":"2026101406073869600_cit15","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1038\/s41586-022-05431-4","article-title":"Approaching the quantum limit in two-dimensional semiconductor contacts","volume":"613","author":"Li","year":"2023","journal-title":"Nature"},{"issue":"1","key":"2026101406073869600_cit16","doi-asserted-by":"publisher","first-page":"55","DOI":"10.1038\/s41699-024-00489-2","article-title":"All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts","volume":"8","author":"Hoque","year":"2024","journal-title":"npj 2D Mater. Appl."},{"issue":"1","key":"2026101406073869600_cit17","doi-asserted-by":"publisher","first-page":"4018","DOI":"10.1038\/s41467-025-59174-7","article-title":"2D Cd metal contacts via low-temperature van der Waals epitaxy towards high-performance 2D transistors","volume":"16","author":"Yue","year":"2025","journal-title":"Nat. Commun."},{"issue":"4","key":"2026101406073869600_cit18","doi-asserted-by":"publisher","first-page":"2285","DOI":"10.1021\/acsanm.2c05051","article-title":"Improving Contacts and Electrical Performances of Nanofilms of MoS2 Transistors through Ultrastrong vdW Integration with Dirac Semimetal PtTe2","volume":"6","author":"Hao","year":"2023","journal-title":"ACS Appl. Nano Mater."},{"issue":"12","key":"2026101406073869600_cit19","doi-asserted-by":"publisher","first-page":"1195","DOI":"10.1038\/nmat4452","article-title":"Electrical contacts to two-dimensional semiconductors","volume":"14","author":"Allain","year":"2015","journal-title":"Nat. Mater."},{"issue":"7750","key":"2026101406073869600_cit20","doi-asserted-by":"publisher","first-page":"70","DOI":"10.1038\/s41586-019-1052-3","article-title":"Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors","volume":"568","author":"Wang","year":"2019","journal-title":"Nature"},{"issue":"6","key":"2026101406073869600_cit21","doi-asserted-by":"publisher","first-page":"3824","DOI":"10.1021\/acs.nanolett.6b01309","article-title":"Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition","volume":"16","author":"English","year":"2016","journal-title":"Nano Lett."},{"issue":"1","key":"2026101406073869600_cit22","doi-asserted-by":"publisher","DOI":"10.1038\/s41699-020-00191-z","article-title":"Origins of genuine Ohmic van der Waals contact between indium and MoS2","volume":"5","author":"Kim","year":"2021","journal-title":"Npj 2D Mater. Appl."},{"issue":"9","key":"2026101406073869600_cit23","doi-asserted-by":"publisher","DOI":"10.1063\/1.4866340","article-title":"High-performance MoS2 transistors with low-resistance molybdenum contacts","volume":"104","author":"Kang","year":"2014","journal-title":"Appl. Phys. Lett."},{"issue":"3","key":"2026101406073869600_cit24","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevX.4.031005","article-title":"Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors","volume":"4","author":"Kang","year":"2014","journal-title":"Phys. Rev. X"},{"issue":"5","key":"2026101406073869600_cit25","doi-asserted-by":"publisher","first-page":"1983","DOI":"10.1021\/nl304777e","article-title":"Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors","volume":"13","author":"Liu","year":"2013","journal-title":"Nano Lett."},{"issue":"1","key":"2026101406073869600_cit26","doi-asserted-by":"publisher","first-page":"22","DOI":"10.1038\/s41377-024-01691-z","article-title":"Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact","volume":"14","author":"Qiao","year":"2025","journal-title":"Light Sci. Appl."},{"issue":"40","key":"2026101406073869600_cit27","doi-asserted-by":"publisher","first-page":"54790","DOI":"10.1021\/acsami.4c10082","article-title":"Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2","volume":"16","author":"Kim","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"6","key":"2026101406073869600_cit28","doi-asserted-by":"publisher","first-page":"160402","DOI":"10.1007\/s11432-023-3942-2","article-title":"Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors","volume":"67","author":"Liu","year":"2024","journal-title":"Sci. China Inf. Sci."},{"issue":"5","key":"2026101406073869600_cit29","doi-asserted-by":"publisher","first-page":"456","DOI":"10.1038\/s41565-023-01375-6","article-title":"Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform","volume":"18","author":"Zhu","year":"2023","journal-title":"Nat. Nanotechnol."},{"issue":"1","key":"2026101406073869600_cit30","doi-asserted-by":"publisher","first-page":"222","DOI":"10.1021\/acs.nanolett.5c04961","article-title":"Synthesis of Two-Dimensional MoS2 and WS2 Films by Enclosed Chemical Vapor Transport Method below the Back-End-of-Line Temperature","volume":"26","author":"Chen","year":"2026","journal-title":"Nano Lett."},{"issue":"1","key":"2026101406073869600_cit31","doi-asserted-by":"publisher","DOI":"10.1038\/srep21786","article-title":"Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations","volume":"6","author":"Zhong","year":"2016","journal-title":"Sci. Rep."},{"key":"2026101406073869600_cit32","doi-asserted-by":"publisher","first-page":"33","DOI":"10.1016\/j.ultramic.2014.05.004","article-title":"Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging","volume":"146","author":"Garcia","year":"2014","journal-title":"Ultramicroscopy"},{"issue":"2","key":"2026101406073869600_cit33","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202307625","article-title":"Probing Functional Structures, Defects, and Interfaces of 2D Transition Metal Dichalcogenides by Electron Microscopy","volume":"34","author":"Luo","year":"2024","journal-title":"Adv. Funct. Mater."},{"issue":"6814","key":"2026101406073869600_cit34","doi-asserted-by":"publisher","first-page":"938","DOI":"10.1126\/science.aee3132","article-title":"Direct evaporation of single-crystal metal contacts for 2D semiconductors","volume":"393","author":"Zhang","year":"2026","journal-title":"Science"},{"issue":"12","key":"2026101406073869600_cit35","doi-asserted-by":"publisher","first-page":"11350","DOI":"10.1021\/nn4052138","article-title":"Metal Contacts on Physical Vapor Deposited Monolayer MoS2","volume":"7","author":"Gong","year":"2013","journal-title":"ACS Nano"},{"issue":"11","key":"2026101406073869600_cit36","doi-asserted-by":"publisher","first-page":"14798","DOI":"10.1021\/acsnano.0c03515","article-title":"Uncovering the Effects of Metal Contacts on Monolayer MoS2","volume":"14","author":"Schauble","year":"2020","journal-title":"ACS Nano"},{"issue":"21","key":"2026101406073869600_cit37","doi-asserted-by":"publisher","first-page":"215701","DOI":"10.1088\/1361-6528\/abe438","article-title":"High-performance ambipolar MoS2 transistor enabled by indium edge contacts","volume":"32","author":"Le Thi","year":"2021","journal-title":"Nanotechnology"},{"issue":"12","key":"2026101406073869600_cit38","doi-asserted-by":"publisher","first-page":"8289","DOI":"10.1021\/acsami.6b00275","article-title":"MoS2\u2013Titanium Contact Interface Reactions","volume":"8","author":"McDonnell","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"27","key":"2026101406073869600_cit39","doi-asserted-by":"publisher","first-page":"14719","DOI":"10.1021\/acs.jpcc.6b04473","article-title":"Contact Metal\u2013MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance","volume":"120","author":"Smyth","year":"2016","journal-title":"J. Phys. Chem. C"},{"issue":"38","key":"2026101406073869600_cit40","doi-asserted-by":"publisher","first-page":"35389","DOI":"10.1021\/acsami.9b08829","article-title":"Thermal Stability of Titanium Contacts to MoS2","volume":"11","author":"Freedy","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"33","key":"2026101406073869600_cit41","doi-asserted-by":"publisher","first-page":"15003","DOI":"10.1021\/acs.jpcc.5c02908","article-title":"Commensurate Palladium Adlayer Formation on 2H-MoS2(0001)","volume":"129","author":"Chin","year":"2025","journal-title":"J. Phys. Chem. C"},{"issue":"2","key":"2026101406073869600_cit42","doi-asserted-by":"publisher","first-page":"1277","DOI":"10.1021\/acs.langmuir.3c02740","article-title":"Investigation of Interface Interactions Between Monolayer MoS2 and Metals: Implications on Strain and Surface Roughness","volume":"40","author":"Juo","year":"2024","journal-title":"Langmuir"},{"issue":"8","key":"2026101406073869600_cit43","doi-asserted-by":"publisher","first-page":"497","DOI":"10.1038\/s44287-024-00068-z","article-title":"The rise of semi-metal electronics","volume":"1","author":"Zhai","year":"2024","journal-title":"Nat. Rev. Electr. Eng."},{"issue":"2","key":"2026101406073869600_cit44","doi-asserted-by":"publisher","first-page":"1588","DOI":"10.1021\/acsnano.6b07159","article-title":"Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides","volume":"11","author":"Kim","year":"2017","journal-title":"ACS Nano"},{"issue":"14","key":"2026101406073869600_cit45","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201808231","article-title":"A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS2-Metal Junction","volume":"31","author":"Yang","year":"2019","journal-title":"Adv. Mater."},{"issue":"11","key":"2026101406073869600_cit46","doi-asserted-by":"publisher","DOI":"10.1063\/1.4895767","article-title":"Schottky barrier heights for Au and Pd contacts to MoS2","volume":"105","author":"Kaushik","year":"2014","journal-title":"Appl. Phys. Lett."},{"issue":"1","key":"2026101406073869600_cit47","doi-asserted-by":"publisher","first-page":"100","DOI":"10.1021\/nl303583v","article-title":"High Performance Multilayer MoS2 Transistors with Scandium Contacts","volume":"13","author":"Das","year":"2013","journal-title":"Nano Lett."},{"issue":"5","key":"2026101406073869600_cit48","doi-asserted-by":"publisher","first-page":"3030","DOI":"10.1021\/nl504957p","article-title":"Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes","volume":"15","author":"Liu","year":"2015","journal-title":"Nano Lett."},{"issue":"1","key":"2026101406073869600_cit49","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/4\/1\/011009","article-title":"Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices","volume":"4","author":"Smithe","year":"2017","journal-title":"2D Mater."},{"key":"2026101406073869600_cit50","doi-asserted-by":"publisher","first-page":"356","DOI":"10.1038\/s41928-024-01158-4","article-title":"200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors","volume":"7","author":"Kwon","year":"2024","journal-title":"Nat. Electron."},{"issue":"6","key":"2026101406073869600_cit51","doi-asserted-by":"publisher","first-page":"2640","DOI":"10.1021\/nl400778q","article-title":"Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films","volume":"13","author":"Liu","year":"2013","journal-title":"Nano Lett."},{"issue":"8","key":"2026101406073869600_cit52","doi-asserted-by":"publisher","first-page":"8456","DOI":"10.1021\/acsnano.7b04100","article-title":"Low Variability in Synthetic Monolayer MoS2 Devices","volume":"11","author":"Smithe","year":"2017","journal-title":"ACS Nano"},{"issue":"12","key":"2026101406073869600_cit53","doi-asserted-by":"publisher","DOI":"10.1002\/inf2.12605","article-title":"Ultra-low power consumption flexible sensing electronics by dendritic bilayer MoS2","volume":"6","author":"Luo","year":"2024","journal-title":"InfoMat"},{"issue":"2","key":"2026101406073869600_cit54","doi-asserted-by":"publisher","first-page":"101","DOI":"10.1038\/s42254-021-00389-0","article-title":"Making clean electrical contacts on 2D transition metal dichalcogenides","volume":"4","author":"Wang","year":"2021","journal-title":"Nat. Rev. Phys."},{"key":"2026101406073869600_cit55","doi-asserted-by":"publisher","first-page":"241","DOI":"10.1038\/s41928-022-00746-6","article-title":"Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors","volume":"5","author":"Kwon","year":"2022","journal-title":"Nat. Electron."},{"issue":"5","key":"2026101406073869600_cit56","doi-asserted-by":"publisher","first-page":"342","DOI":"10.1038\/s41928-021-00566-0","article-title":"Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors","volume":"4","author":"Liu","year":"2021","journal-title":"Nat. Electron."},{"issue":"11","key":"2026101406073869600_cit57","doi-asserted-by":"publisher","first-page":"10162","DOI":"10.1007\/s12274-024-6942-5","article-title":"Unipolar p-type monolayer WSe2 field-effect transistors with high current density and low contact resistance enabled by van der Waals contacts","volume":"17","author":"Li","year":"2024","journal-title":"Nano Res."}],"container-title":["ACS Applied Materials &amp; Interfaces"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsami.6c15768","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/doi\/10.1021\/acsami.6c15768\/68733993\/am-2026-157688.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/aamick\/article-pdf\/doi\/10.1021\/acsami.6c15768\/68733993\/am-2026-157688.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T10:19:12Z","timestamp":1791973152000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/aamick\/article\/18\/40\/55170\/5443803\/Decoupling-Thermal-and-Electronic-Effects-of-Metal"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,2]]},"references-count":57,"journal-issue":{"issue":"40","published-online":{"date-parts":[[2026,10,2]]},"published-print":{"date-parts":[[2026,10,14]]}},"URL":"https:\/\/doi.org\/10.1021\/acsami.6c15768","relation":{},"ISSN":["1944-8244","1944-8252"],"issn-type":[{"value":"1944-8244","type":"print"},{"value":"1944-8252","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,2]]}}}