{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T17:42:28Z","timestamp":1792518148792,"version":"4.5.0"},"reference-count":73,"publisher":"American Chemical Society (ACS)","license":[{"start":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T00:00:00Z","timestamp":1792454400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/100000183","name":"Army Research Office","doi-asserted-by":"publisher","award":["W911NF2220191"],"award-info":[{"award-number":["W911NF2220191"]}],"id":[{"id":"10.13039\/100000183","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2026-25481474"],"award-info":[{"award-number":["RS-2026-25481474"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["RS-2024-00432559"],"award-info":[{"award-number":["RS-2024-00432559"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100010446","name":"Institute for Basic Science","doi-asserted-by":"publisher","award":["IBS-R019-D01"],"award-info":[{"award-number":["IBS-R019-D01"]}],"id":[{"id":"10.13039\/501100010446","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Thin film beryllium oxide (BeO) is an emerging material that can potentially be used as a high thermal conductivity gate dielectric and\/or passivation layer for high power electronic devices. This study presents the measurement of the thermal conductivity and thermal boundary conductance associated with plasma-enhanced atomic layer deposition (PEALD)-grown polycrystalline BeO films on Si substrates with thicknesses ranging from 25 to 250 nm. The measured out-of-plane thermal conductivities of the 250, 113, 53, and 26 nm-thick BeO films are 13.45 \u00b1 1.45, 8.7 \u00b1 1.35, 7.2 \u00b1 2.1, and 5 \u00b1 2.2 W m\u20131 K\u20131, respectively, representing an order-of-magnitude improvement over conventional dielectric materials such as SiN and SiO2. The measured thermal boundary conductance across the BeO\/Si interface is \u223c200 MW m\u20132 K\u20131 at room temperature, which approaches the intrinsic interface limit and suggests that interfacial heat transport is predominantly governed by elastic phonon transmission. The growth of a \u223c200 nm-thick polycrystalline diamond film on an AlGaN\/GaN-on-Si epitaxial wafer using a 5 nm-thick BeO diamond-seeding is demonstrated, where the structural integrity of the underlying AlGaN\/GaN heterostructure is fully preserved. Thermal simulations of AlGaN\/GaN high electron mobility transistors (HEMTs) integrated with a top-side polycrystalline diamond heat spreader predict that replacing the conventional SiO2 passivation and nucleation layers with BeO helps reduce the channel temperature rise by an additional 5.2%.<\/jats:p>","DOI":"10.1021\/acsami.6c16056","type":"journal-article","created":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T17:02:12Z","timestamp":1792515732000},"source":"Crossref","is-referenced-by-count":0,"title":["Thermal Transport in Atomic Layer Deposition-Grown Beryllium Oxide Thin Films and Implications on Device Cooling"],"prefix":"10.1021","author":[{"ORCID":"https:\/\/orcid.org\/0009-0008-1170-6638","authenticated-orcid":true,"given":"Husam","family":"Walwil","sequence":"first","affiliation":[{"name":"The Pennsylvania State University , , , ,","place":["University Park, PA, United States, 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21983"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nipun","family":"Sutradhar","sequence":"additional","affiliation":[{"name":"University of Houston , , , ,","place":["Houston, TX, United States, 77204"]},{"name":"University of Houston , , , ,","place":["Houston, Texas, United States, 77204"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Asad","family":"Ali","sequence":"additional","affiliation":[{"name":"University of Houston , , , ,","place":["Houston, TX, United States, 77204"]},{"name":"University of Houston , , , ,","place":["Houston, Texas, United States, 77204"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sadikul","family":"Alam","sequence":"additional","affiliation":[{"name":"The Ohio State University , , , ,","place":["Columbus, Ohio, United States, 43210"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5483-708X","authenticated-orcid":true,"given":"Robert 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94305"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongkun","family":"Li","sequence":"additional","affiliation":[{"name":"Southwest Jiaotong University , , , ,","place":["Chengdu, Sichuan, China, 610031"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9793-5763","authenticated-orcid":true,"given":"Weidong","family":"Zheng","sequence":"additional","affiliation":[{"name":"Shandong Institute of Advanced Technology , , ,","place":["Jinan, China, 250103"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9862-7589","authenticated-orcid":true,"given":"Prakash R.","family":"Sultane","sequence":"additional","affiliation":[{"name":"Institute for Basic Science (IBS) , , ,","place":["Ulsan, Republic of Korea, 44919"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Christopher W.","family":"Bielawski","sequence":"additional","affiliation":[{"name":"Institute for Basic 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