{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T08:59:26Z","timestamp":1790758766972,"version":"4.1.0"},"reference-count":50,"publisher":"American Chemical Society (ACS)","issue":"38","license":[{"start":{"date-parts":[[2026,9,18]],"date-time":"2026-09-18T00:00:00Z","timestamp":1789689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,18]],"date-time":"2026-09-18T00:00:00Z","timestamp":1789689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,18]],"date-time":"2026-09-18T00:00:00Z","timestamp":1789689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2021YFA1601003"],"award-info":[{"award-number":["2021YFA1601003"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,30]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>As integrated circuit technology scales toward the Angstrom era, the limitations of traditional spin-coated wet photoresists\u2014specifically regarding stochastic defects and pattern collapse\u2014have become critical bottlenecks for high-numerical-aperture extreme ultraviolet (high-NA EUV) lithography. Consequently, dry photoresists deposited via molecular layer deposition (MLD) have emerged as a transformative solution, offering atomic-level thickness control and superior uniformity. Here, we report a tin-based hybrid dry photoresist synthesized via MLD using tetrakis(dimethylamino)tin and 2-butene-1,4-diol. A distinctive feature of this material is its tunable polarity, governed by the development modality: wet development in an ammonia solution yields a positive-tone resist, while dry development using fluorine-based inductively coupled plasma (ICP) etching results in a negative-tone profile. Under 50 keV electron beam exposure (wet development) conditions, we achieved an outstanding resolution limit of 7 nm for a single line, whilst under EUV exposure conditions, we achieved a resolution limit of 18 nm for a single line. To decode the underlying physics of this dual-tone behavior, we employed a rigorous multiscale approach combining in-situ characterization (XPS, TEM, EDS, and EUV-irradiated mass spectrometry) with density functional theory (DFT) calculations. These theoretical and experimental insights elucidate the specific bond-breaking and reorganization mechanisms driving the polarity switch. This work not only presents a high-performance candidate for next-generation lithography but also establishes a fundamental framework for the mechanistic design of advanced dry photoresists.<\/jats:p>","DOI":"10.1021\/acsami.6c17078","type":"journal-article","created":{"date-parts":[[2026,9,18]],"date-time":"2026-09-18T07:01:18Z","timestamp":1789714878000},"page":"53000-53009","source":"Crossref","is-referenced-by-count":0,"title":["Tunable Positive\/Negative Tone Switching in Sn-Based Extreme Ultraviolet Lithography Dry Resists: Mechanism and Sub-7 nm Patterning"],"prefix":"10.1021","volume":"18","author":[{"given":"Xingkun","family":"Wang","sequence":"first","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chen","family":"Zhu","sequence":"additional","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yutao","family":"Xu","sequence":"additional","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jianan","family":"Xie","sequence":"additional","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Miao","family":"Meng","sequence":"additional","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hong","family":"Dong","sequence":"additional","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7215-8307","authenticated-orcid":true,"given":"Jincheng","family":"Liu","sequence":"additional","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6327-1527","authenticated-orcid":true,"given":"Xiaolei","family":"Sun","sequence":"additional","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3442-3987","authenticated-orcid":true,"given":"Feng","family":"Luo","sequence":"additional","affiliation":[{"name":"Nankai University , , ,","place":["Tianjin, China, 300350"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,18]]},"reference":[{"key":"2026093002085158400_cit1","doi-asserted-by":"publisher","DOI":"10.1016\/j.polymer.2023.126020","article-title":"Recent developments in photoresists for extreme-ultraviolet lithography","volume":"280","author":"Ober","year":"2023","journal-title":"Polymer"},{"issue":"4","key":"2026093002085158400_cit2","doi-asserted-by":"publisher","DOI":"10.1117\/1.Jmm.21.4.041402","article-title":"Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning","volume":"21","author":"Saifullah","year":"2022","journal-title":"J. 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