{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T12:49:55Z","timestamp":1792500595808,"version":"4.5.0"},"reference-count":40,"publisher":"American Chemical Society (ACS)","issue":"41","license":[{"start":{"date-parts":[[2026,10,5]],"date-time":"2026-10-05T00:00:00Z","timestamp":1791158400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,20]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>In conventional field-effect transistors (FETs), the gate dielectric primarily provides electrostatic control of the channel and is engineered to remain chemically and electronically inert to ensure stable operation. Emerging studies, however, suggest that functional dielectrics integrated with two-dimensional (2D) semiconductors can introduce additional physical mechanisms that influence device behavior. Here, we investigate AgInP2S6 (AIPS), a high-\u03ba van der Waals thiophosphate, as a functional top-gate dielectric in MoS2 field-effect transistors. The AIPS\/MoS2 heterointerface exhibits coupled opto-ionic-electronic interactions, where defect-mediated sub-bandgap photoactivity and photon-assisted Ag+ ion migration independently occur within the dielectric yet collectively modulate the channel conductance. Optical excitation redistributes charge within the dielectric, gradually reconfiguring the ionic landscape and altering the interfacial electrostatic potential. The resulting conductance exhibits strong temperature dependence. At low temperatures (\u223c0 \u00b0C), reduced phonon activity suppresses Ag+ mobility, leading to persistent photoconductivity. At elevated temperatures (\u223c80 \u00b0C), thermally activated ion hopping accelerates relaxation of the stored state. This temperature-dependent retention behavior enables a thermally tunable fading memory response, where the persistence of the optically induced conductance state can be controlled through ionic dynamics. These results highlight how opto-ionic coupling at 2D\/dielectric interfaces can introduce stimulus-responsive functionality in transistor architectures, providing a platform for devices that combine sensing and memory behavior within the gate stack.<\/jats:p>","DOI":"10.1021\/acsnano.5c21149","type":"journal-article","created":{"date-parts":[[2026,10,5]],"date-time":"2026-10-05T17:02:36Z","timestamp":1791219756000},"page":"27665-27677","source":"Crossref","is-referenced-by-count":0,"title":["Thermally Tunable\nFading Memory Enabled by Opto-Ionic-Electronic\nCoupling in AgInP2S6-Gated Two-Dimensional\nField-Effect Transistors"],"prefix":"10.1021","volume":"20","author":[{"given":"Dipanjan","family":"Sen","sequence":"first","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Anirban","family":"Chowdhury","sequence":"additional","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7294-4420","authenticated-orcid":true,"given":"Anshul","family":"Rasyotra","sequence":"additional","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7842-5277","authenticated-orcid":true,"given":"Lei","family":"Ding","sequence":"additional","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6358-7601","authenticated-orcid":true,"given":"Rui","family":"Gusmao","sequence":"additional","affiliation":[{"name":"University of Chemistry and Technology Prague , , ,","place":["Prague, Czech Republic, 16000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Subir","family":"Ghosh","sequence":"additional","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Arpan","family":"Ghosh","sequence":"additional","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7906-452X","authenticated-orcid":true,"given":"Joan M.","family":"Redwing","sequence":"additional","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]},{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0661-8747","authenticated-orcid":true,"given":"Divya","family":"Somvanshi","sequence":"additional","affiliation":[{"name":"Harcourt Butler Technical University , , , ,","place":["Kanpur, Uttar Pradesh, India, 208002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0025-5914","authenticated-orcid":true,"given":"Yang","family":"Yang","sequence":"additional","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1391-4448","authenticated-orcid":true,"given":"Zdenek","family":"Sofer","sequence":"additional","affiliation":[{"name":"University of Chemistry and Technology Prague , , ,","place":["Prague, Czech Republic, 16000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0188-945X","authenticated-orcid":true,"given":"Saptarshi","family":"Das","sequence":"additional","affiliation":[{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]},{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]},{"name":"Penn State University , , , ,","place":["University Park, Pennsylvania, United States, 16802"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,5]]},"reference":[{"issue":"5469","key":"2026102008162828900_cit1","doi-asserted-by":"publisher","first-page":"1189","DOI":"10.1126\/science.288.5469.1189","article-title":"Neuromorphic vision 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Mater."},{"issue":"11","key":"2026102008162828900_cit6","doi-asserted-by":"publisher","first-page":"850","DOI":"10.1038\/s41578-022-00427-y","article-title":"Soft wearable devices for deep-tissue\nsensing","volume":"7","author":"Lin","year":"2022","journal-title":"Nat. Rev. Mater."},{"issue":"1","key":"2026102008162828900_cit7","doi-asserted-by":"publisher","first-page":"10","DOI":"10.1038\/s41928-022-00898-5","article-title":"Wirelessly powered large-area\nelectronics for the Internet of Things","volume":"6","author":"Portilla","year":"2023","journal-title":"Nat.\nElectron."},{"issue":"6","key":"2026102008162828900_cit8","doi-asserted-by":"publisher","first-page":"1129","DOI":"10.1109\/TBCAS.2016.2522402","article-title":"System-on-chip\nconsiderations for\nheterogeneous integration of CMOS and fluidic bio-interfaces","volume":"10","author":"Datta-Chaudhuri","year":"2016","journal-title":"IEEE Trans. Biomed. 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Lett."},{"issue":"3","key":"2026102008162828900_cit11","doi-asserted-by":"publisher","first-page":"2305679","DOI":"10.1002\/advs.202305679","article-title":"integrated in-memory\nsensor and computing of artificial vision based on full-vdW optoelectronic\nferroelectric field-effect transistor","volume":"11","author":"Wang","year":"2024","journal-title":"Adv.\nSci."},{"issue":"4","key":"2026102008162828900_cit12","doi-asserted-by":"publisher","first-page":"5418","DOI":"10.1021\/acsnano.1c09136","article-title":"Two-dimensional CIPS-InSe van der\nWaal heterostructure ferroelectric\nfield effect transistor for nonvolatile memory applications","volume":"16","author":"Singh","year":"2022","journal-title":"ACS Nano"},{"issue":"11","key":"2026102008162828900_cit13","doi-asserted-by":"publisher","first-page":"826","DOI":"10.1038\/nnano.2013.206","article-title":"Graphene\u2013MoS2 hybrid structures\nfor multifunctional photoresponsive memory devices","volume":"8","author":"Roy","year":"2013","journal-title":"Nat. Nanotechnol."},{"issue":"1","key":"2026102008162828900_cit14","doi-asserted-by":"publisher","first-page":"672","DOI":"10.1021\/acsnano.5c14746","article-title":"Complementary Photoresponse in van der Waals\nHeterostructures for Insect-Inspired Neuromorphic Vision","volume":"20","author":"Sen","year":"2026","journal-title":"ACS Nano"},{"issue":"15","key":"2026102008162828900_cit15","doi-asserted-by":"publisher","first-page":"4951","DOI":"10.1021\/acs.nanolett.5c05227","article-title":"Exploiting the Photoresponse in LiInP2Se6 for Image Processing","volume":"26","author":"Rasyotra","year":"2026","journal-title":"Nano Lett."},{"key":"2026102008162828900_cit16","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.microrel.2016.09.004","article-title":"Dielectric charging\ninduced drift in micro device reliability-a review","volume":"66","author":"Zhou","year":"2016","journal-title":"Microelectron. Reliability"},{"issue":"5","key":"2026102008162828900_cit17","doi-asserted-by":"publisher","first-page":"3039","DOI":"10.1021\/acsaelm.3c01394","article-title":"Ion migration\nin metal halide perovskite field-effect transistors","volume":"6","author":"Cheng","year":"2024","journal-title":"ACS Appl. Electron. Mater."},{"issue":"9","key":"2026102008162828900_cit18","doi-asserted-by":"publisher","first-page":"094508","DOI":"10.1063\/1.4977453","article-title":"Ion migration\nin crystalline and amorphous HfOx","volume":"146","author":"Schie","year":"2017","journal-title":"J. Chem.\nPhys."},{"issue":"12","key":"2026102008162828900_cit19","doi-asserted-by":"publisher","first-page":"122105","DOI":"10.1063\/1.4870047","article-title":"Improved bias-temperature\ninstability characteristics\nin SiC metal-oxide-semiconductor devices with aluminum oxynitride\ndielectrics","volume":"104","author":"Chanthaphan","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"2026102008162828900_cit20","doi-asserted-by":"publisher","first-page":"12","DOI":"10.1016\/j.microrel.2017.01.011","article-title":"Mechanism of gate dielectric degradation\nby hydrogen migration from the cathode interface","volume":"70","author":"Higashi","year":"2017","journal-title":"Microelectron. Reliability"},{"key":"2026102008162828900_cit21","doi-asserted-by":"crossref","unstructured":"Grella, K.; Vogt, Dreiner H.; Paschen, U. In Reliability\nof CMOS on Silicon-on-Insulator for Use at 250 \u00b0C.  IEEE Transactions on Device and Materials Reliability, 2014; Vol. 14(1), pp 21\u221229.10.1109\/TDMR.2013.2284665.","DOI":"10.1109\/TDMR.2013.2284665"},{"issue":"1","key":"2026102008162828900_cit22","doi-asserted-by":"publisher","first-page":"7096","DOI":"10.1038\/s41467-025-62563-7","article-title":"Ionic-electronic photodetector for vision assistance with in-sensor\nimage processing","volume":"16","author":"Zhong","year":"2025","journal-title":"Nat. Commun."},{"issue":"13","key":"2026102008162828900_cit23","doi-asserted-by":"publisher","first-page":"12563","DOI":"10.1021\/acsnano.3c02406","article-title":"Robust\nThreshold-Switching Behavior Assisted by Cu Migration in a\nFerroionic CuInP2S6 Heterostructure","volume":"17","author":"Zhong","year":"2023","journal-title":"ACS Nano"},{"issue":"15","key":"2026102008162828900_cit24","doi-asserted-by":"publisher","first-page":"6837","DOI":"10.1021\/acs.jpcc.2c00983","article-title":"Ultrafast photocarrier\ndynamics and nonlinear optical absorption of a layered quaternary\nAgInP2S6 crystal","volume":"126","author":"Zhao","year":"2022","journal-title":"J. Phys. Chem. C"},{"issue":"2","key":"2026102008162828900_cit25","doi-asserted-by":"publisher","first-page":"2201358","DOI":"10.1002\/smtd.202201358","article-title":"2D layered\nbimetallic phosphorous trisulfides MIMIIIP2S6 (MI= Cu, Ag; MIII= Sc,\nV, Cr, In). for electrochemical energy conversion","volume":"7","author":"Oliveira","year":"2023","journal-title":"Small Methods"},{"issue":"2","key":"2026102008162828900_cit26","doi-asserted-by":"publisher","first-page":"696","DOI":"10.1039\/D1TC04984D","article-title":"Temperature-tunable\noptical properties and carrier\nrelaxation of CuInP 2 S 6 crystals under ferroelectric-paraelectric\nphase transition","volume":"10","author":"Yan","year":"2022","journal-title":"J. Mater. Chem. C"},{"issue":"35","key":"2026102008162828900_cit27","doi-asserted-by":"publisher","first-page":"2470116","DOI":"10.1002\/adom.202400481","article-title":"Synergistic\nEffects of Defects and Strain on Photoluminescence in Van der Waals\nLayered Crystal AgScP2S6 (Advanced Optical Materials 35\/2024)","volume":"12","author":"Mukherjee","year":"2024","journal-title":"Adv. Opt. Mater."},{"issue":"21","key":"2026102008162828900_cit28","doi-asserted-by":"publisher","first-page":"19646","DOI":"10.1021\/acsnano.4c18634","article-title":"Nanosheets\nDerived from Titanium Diboride as Gate Insulators for Atomically Thin\nTransistors","volume":"19","author":"Rasyotra","year":"2025","journal-title":"ACS Nano"},{"issue":"1","key":"2026102008162828900_cit29","doi-asserted-by":"publisher","first-page":"9469","DOI":"10.1038\/s41467-024-53907-w","article-title":"Single-crystalline\nHigh-\u03ba GdOCl dielectric for two-dimensional\nfield-effect transistors","volume":"15","author":"Xu","year":"2024","journal-title":"Nat. Commun."},{"issue":"7909","key":"2026102008162828900_cit30","doi-asserted-by":"publisher","first-page":"262","DOI":"10.1038\/s41586-022-04588-2","article-title":"High-\u03ba\nperovskite membranes as insulators for two-dimensional transistors","volume":"605","author":"Huang","year":"2022","journal-title":"Nature"},{"key":"2026102008162828900_cit31","doi-asserted-by":"publisher","first-page":"932","DOI":"10.1038\/s41565-024-01675-5","article-title":"Superionic\nfluoride gate dielectrics with low diffusion barrier for two-dimensional\nelectronics","volume":"19","author":"Meng","year":"2024","journal-title":"Nat. Nanotechnol."},{"issue":"9","key":"2026102008162828900_cit32","doi-asserted-by":"publisher","first-page":"095202","DOI":"10.1088\/1361-6528\/aaf956","article-title":"Near-ideal subthreshold\nswing MoS2 back-gate transistors with an optimized ultrathin HfO2\ndielectric layer","volume":"30","author":"Pan","year":"2019","journal-title":"Nanotechnology"},{"issue":"4","key":"2026102008162828900_cit33","doi-asserted-by":"publisher","first-page":"233","DOI":"10.1038\/s41928-022-00753-7","article-title":"Van der\nWaals integration of high-\u03ba perovskite oxides and two-dimensional\nsemiconductors","volume":"5","author":"Yang","year":"2022","journal-title":"Nat. Electron."},{"issue":"3","key":"2026102008162828900_cit34","doi-asserted-by":"publisher","first-page":"261","DOI":"10.1038\/s44460-026-00034-2","article-title":"Solid-state thermometry via ionic\u2013electronic\ncoupling in two-dimensional heterostructures","volume":"1","author":"Sen","year":"2026","journal-title":"Nat. Sens."},{"issue":"7","key":"2026102008162828900_cit35","doi-asserted-by":"publisher","first-page":"1908210","DOI":"10.1002\/adfm.201908210","article-title":"Low Voltage\nand Ferroelectric 2D Electron Devices Using Lead-Free BaxSr1-xTiO3\nand MoS2 Channel","volume":"30","author":"Jeong","year":"2020","journal-title":"Adv. Funct. Mater."},{"key":"2026102008162828900_cit36","doi-asserted-by":"publisher","first-page":"1044","DOI":"10.1038\/s41565-023-01399-y","article-title":"Scalable CMOS back-end-of-line-compatible AlScN\/two-dimensional\nchannel ferroelectric field-effect transistors","volume":"18","author":"Kim","year":"2023","journal-title":"Nat. Nanotechnol."},{"issue":"12","key":"2026102008162828900_cit37","doi-asserted-by":"publisher","first-page":"20010","DOI":"10.1021\/acsnano.2c02906","article-title":"Bioinspired\nand low-power 2D machine vision with adaptive machine learning and\nforgetting","volume":"16","author":"Dodda","year":"2022","journal-title":"ACS Nano"},{"issue":"2","key":"2026102008162828900_cit38","doi-asserted-by":"publisher","first-page":"1068","DOI":"10.1021\/acsnano.2c07877","article-title":"Insect-inspired, spike-based,\nin-sensor, and night-time\ncollision detector based on atomically thin and light-sensitive memtransistors","volume":"17","author":"Jayachandran","year":"2023","journal-title":"ACS Nano"},{"issue":"12","key":"2026102008162828900_cit39","doi-asserted-by":"publisher","first-page":"12288","DOI":"10.1021\/acsnano.5c01145","article-title":"Stability and Reliability of van\nder Waals High-\u03ba\nSrTiO3 Field-Effect Transistors with Small Hysteresis","volume":"19","author":"Sattari-Esfahlan","year":"2025","journal-title":"ACS Nano"},{"issue":"1","key":"2026102008162828900_cit40","doi-asserted-by":"publisher","first-page":"3450","DOI":"10.1038\/s41467-019-11381-9","article-title":"A biomimetic\n2D transistor for audiomorphic\ncomputing","volume":"10","author":"Das","year":"2019","journal-title":"Nat. Commun."}],"container-title":["ACS Nano"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsnano.5c21149","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/ancac3\/article-pdf\/20\/41\/27665\/68747061\/acsnano.5c21149.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/ancac3\/article-pdf\/20\/41\/27665\/68747061\/acsnano.5c21149.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T12:29:37Z","timestamp":1792499377000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/ancac3\/article\/20\/41\/27665\/5444653\/Thermally-Tunable-Fading-Memory-Enabled-by-Opto"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,5]]},"references-count":40,"journal-issue":{"issue":"41","published-online":{"date-parts":[[2026,10,5]]},"published-print":{"date-parts":[[2026,10,20]]}},"URL":"https:\/\/doi.org\/10.1021\/acsnano.5c21149","relation":{},"ISSN":["1936-0851","1936-086X"],"issn-type":[{"value":"1936-0851","type":"print"},{"value":"1936-086X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,5]]}}}