{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,26]],"date-time":"2026-10-26T19:26:49Z","timestamp":1793042809316,"version":"4.5.0"},"reference-count":58,"publisher":"American Chemical Society (ACS)","issue":"32","license":[{"start":{"date-parts":[[2026,8,5]],"date-time":"2026-08-05T00:00:00Z","timestamp":1785888000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/na","name":"Department of the Navy, Office of Naval Research","doi-asserted-by":"publisher","award":["NA"],"award-info":[{"award-number":["NA"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"National Laboratory of the Rockies for the U.S. Department of Energy","doi-asserted-by":"publisher","award":["NA"],"award-info":[{"award-number":["NA"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"U.S. Department of Energy Office of Critical Minerals and Energy Innovation Solar Energy Technologies Office","doi-asserted-by":"publisher","award":["NA"],"award-info":[{"award-number":["NA"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,8,18]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)\/methylammonium lead triiodide (MAPbI3)\/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping\/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.<\/jats:p>","DOI":"10.1021\/acsnano.6c04620","type":"journal-article","created":{"date-parts":[[2026,8,6]],"date-time":"2026-08-06T00:02:14Z","timestamp":1785974534000},"page":"22562-22573","source":"Crossref","is-referenced-by-count":2,"title":["From\nFilamentary Failure to Durable Halide Perovskite\nMemristors"],"prefix":"10.1021","volume":"20","author":[{"given":"Tuo","family":"Hu","sequence":"first","affiliation":[{"name":"Princeton University , , , ,","place":["Princeton, New Jersey, United States, 08544"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nathalie","family":"Tuazon","sequence":"additional","affiliation":[{"name":"California State University Northridge , , , ,","place":["Northridge, California, United States, 91330"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhaojian","family":"Xu","sequence":"additional","affiliation":[{"name":"Princeton University , , , ,","place":["Princeton, New Jersey, United States, 08544"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sunney","family":"Gao","sequence":"additional","affiliation":[{"name":"Princeton University , , , ,","place":["Princeton, New Jersey, United States, 08544"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jisu","family":"Hong","sequence":"additional","affiliation":[{"name":"Princeton University , , , ,","place":["Princeton, New Jersey, United States, 08544"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hussein","family":"Badran","sequence":"additional","affiliation":[{"name":"Princeton University , , , ,","place":["Princeton, New Jersey, United States, 08544"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3692-6820","authenticated-orcid":true,"given":"Ross A.","family":"Kerner","sequence":"additional","affiliation":[{"name":"National Laboratory of the Rockies , , , ,","place":["Golden, Colorado, United States, 80401"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiangfei","family":"Xia","sequence":"additional","affiliation":[{"name":"University of Massachusetts , , , ,","place":["Amherst, Massachusetts, United States, 01003"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4409-8751","authenticated-orcid":true,"given":"Barry P.","family":"Rand","sequence":"additional","affiliation":[{"name":"Princeton University , , , ,","place":["Princeton, New Jersey, United States, 08544"]},{"name":"Princeton University , , , ,","place":["Princeton, New Jersey, United States, 08544"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,5]]},"reference":[{"issue":"3","key":"2026081810285530800_cit1","doi-asserted-by":"publisher","first-page":"173","DOI":"10.1038\/s41578-019-0159-3","article-title":"Resistive\nSwitching Materials for Information Processing","volume":"5","author":"Wang","year":"2020","journal-title":"Nat. Rev. Mater."},{"issue":"4","key":"2026081810285530800_cit2","doi-asserted-by":"publisher","first-page":"309","DOI":"10.1038\/s41563-019-0291-x","article-title":"Memristive Crossbar Arrays for Brain-Inspired Computing","volume":"18","author":"Xia","year":"2019","journal-title":"Nat. Mater."},{"issue":"7792","key":"2026081810285530800_cit3","doi-asserted-by":"publisher","first-page":"641","DOI":"10.1038\/s41586-020-1942-4","article-title":"Fully Hardware-Implemented\nMemristor\nConvolutional Neural Network","volume":"577","author":"Yao","year":"2020","journal-title":"Nature"},{"issue":"7954","key":"2026081810285530800_cit4","doi-asserted-by":"publisher","first-page":"823","DOI":"10.1038\/s41586-023-05759-5","article-title":"Thousands of Conductance\nLevels in Memristors for Analog Neural Networks","volume":"615","author":"Rao","year":"2023","journal-title":"Nature"},{"issue":"7","key":"2026081810285530800_cit5","doi-asserted-by":"publisher","first-page":"429","DOI":"10.1038\/nnano.2008.160","article-title":"Memristive Switching\nMechanism for Metal\/Oxide\/Metal\nNanodevices","volume":"3","author":"Yang","year":"2008","journal-title":"Nat. Nanotechnol."},{"issue":"1","key":"2026081810285530800_cit6","doi-asserted-by":"publisher","first-page":"3453","DOI":"10.1038\/s41467-019-11411-6","article-title":"Understanding Memristive\nSwitching via In Situ Characterization and\nDevice Modeling","volume":"10","author":"Sun","year":"2019","journal-title":"Nat. Commun."},{"issue":"1","key":"2026081810285530800_cit7","doi-asserted-by":"publisher","first-page":"73","DOI":"10.1021\/acsaelm.3c01323","article-title":"Resistive Switching Properties in Memristors for Optoelectronic\nSynaptic Memristors: Deposition Techniques, Key Performance Parameters,\nand Applications","volume":"6","author":"Khan","year":"2024","journal-title":"ACS Appl. Electron. Mater."},{"issue":"50","key":"2026081810285530800_cit8","doi-asserted-by":"publisher","first-page":"503002","DOI":"10.1088\/1361-6463\/aade3f","article-title":"Review\nof Memristor Devices in Neuromorphic Computing","volume":"51","author":"Li","year":"2018","journal-title":"J. Phys. D: Appl. Phys."},{"issue":"40","key":"2026081810285530800_cit9","doi-asserted-by":"publisher","first-page":"6170","DOI":"10.1002\/adma.201502889","article-title":"Resistive\nSwitching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3-xClx Perovskite for Resistive\nRandom Access Memory Devices","volume":"27","author":"Yoo","year":"2015","journal-title":"Adv. Mater."},{"issue":"31","key":"2026081810285530800_cit10","doi-asserted-by":"publisher","first-page":"6562","DOI":"10.1002\/adma.201600859","article-title":"Organolead Halide Perovskites for\nLow Operating Voltage Multilevel Resistive Switching","volume":"28","author":"Choi","year":"2016","journal-title":"Adv. Mater."},{"issue":"5","key":"2026081810285530800_cit11","doi-asserted-by":"publisher","first-page":"5413","DOI":"10.1021\/acsnano.6b01643","article-title":"Flexible Hybrid Organic\u2013Inorganic Perovskite\nMemory","volume":"10","author":"Gu","year":"2016","journal-title":"ACS Nano"},{"issue":"12","key":"2026081810285530800_cit12","doi-asserted-by":"publisher","first-page":"949","DOI":"10.1038\/s41928-023-01082-z","article-title":"Neuromorphic Computing Based on Halide\nPerovskites","volume":"6","author":"Vasilopoulou","year":"2023","journal-title":"Nat. Electron."},{"issue":"1","key":"2026081810285530800_cit13","doi-asserted-by":"publisher","first-page":"7497","DOI":"10.1038\/ncomms8497","article-title":"Ionic Transport\nin Hybrid Lead Iodide\nPerovskite Solar Cells","volume":"6","author":"Eames","year":"2015","journal-title":"Nat. Commun."},{"issue":"3","key":"2026081810285530800_cit14","doi-asserted-by":"publisher","first-page":"573","DOI":"10.1021\/acs.accounts.5b00540","article-title":"Hybrid Organic\u2013Inorganic Perovskites\non the Move","volume":"49","author":"Egger","year":"2016","journal-title":"Acc. Chem. Res."},{"issue":"3","key":"2026081810285530800_cit15","doi-asserted-by":"publisher","first-page":"528","DOI":"10.1021\/acs.accounts.5b00431","article-title":"What Is Moving in Hybrid\nHalide Perovskite Solar Cells?","volume":"49","author":"Frost","year":"2016","journal-title":"Acc. Chem. Res."},{"issue":"9","key":"2026081810285530800_cit16","doi-asserted-by":"publisher","first-page":"4645","DOI":"10.1021\/acsenergylett.4c02033","article-title":"Beyond Ion Migration\nin Metal Halide Perovskites: Toward a Broader Photoelectrochemistry\nPerspective","volume":"9","author":"Xu","year":"2024","journal-title":"ACS Energy Lett."},{"issue":"29","key":"2026081810285530800_cit17","doi-asserted-by":"publisher","first-page":"2302206","DOI":"10.1002\/adma.202302206","article-title":"Electrochemical\nDoping of Halide Perovskites by Noble\nMetal Interstitial Cations","volume":"35","author":"Kerner","year":"2023","journal-title":"Adv. Mater."},{"issue":"24","key":"2026081810285530800_cit18","doi-asserted-by":"publisher","first-page":"10483","DOI":"10.1039\/D5EE04569J","article-title":"Electrolytic\nGold Plating, Stripping, and Ion Transport Dynamics through a Solid-State\nIodide Perovskite","volume":"18","author":"Hu","year":"2025","journal-title":"Energy. Envrion. Sci."},{"issue":"3","key":"2026081810285530800_cit19","doi-asserted-by":"publisher","first-page":"100096","DOI":"10.1016\/j.newton.2025.100096","article-title":"A Balanced\nView of Ion Migration\nin Halide Perovskite Electronics","volume":"1","author":"Li","year":"2025","journal-title":"Newton"},{"issue":"1","key":"2026081810285530800_cit20","doi-asserted-by":"publisher","first-page":"1800238","DOI":"10.1002\/admt.201800238","article-title":"Cycling-Induced Degradation of Organic\u2013Inorganic\nPerovskite-Based Resistive Switching Memory","volume":"4","author":"Ren","year":"2019","journal-title":"Adv. Mater. Technol."},{"issue":"2","key":"2026081810285530800_cit21","doi-asserted-by":"publisher","first-page":"2457","DOI":"10.1021\/acsami.3c01450","article-title":"MAPbBr3 Halide Perovskite-Based Resistive\nRandom-Access Memories Using Electron Transport Layers for Long Endurance\nCycles and Retention Time","volume":"16","author":"Kim","year":"2024","journal-title":"ACS Appl. Mater.\nInterfaces"},{"issue":"14","key":"2026081810285530800_cit22","doi-asserted-by":"publisher","first-page":"2214142","DOI":"10.1002\/adfm.202214142","article-title":"Intact Metal\/Metal\nHalide van Der Waals Junction Enables Reliable Memristive Switching\nwith High Endurance","volume":"33","author":"Lee","year":"2023","journal-title":"Adv. Funct. Mater."},{"issue":"24","key":"2026081810285530800_cit23","doi-asserted-by":"publisher","first-page":"2420547","DOI":"10.1002\/adfm.202420547","article-title":"Stable Halide Perovskite\nMemristor Utilizing Innovative\nSilver\/Bismuth Electrode as an Alternative to Gold","volume":"35","author":"Feng","year":"2025","journal-title":"Adv. Funct. Mater."},{"issue":"6","key":"2026081810285530800_cit24","doi-asserted-by":"publisher","first-page":"1395","DOI":"10.1021\/acs.jpclett.2c03669","article-title":"Mechanistic and Kinetic Analysis of Perovskite Memristors\nwith Buffer Layers: The Case of a Two-Step Set Process","volume":"14","author":"Gonzales","year":"2023","journal-title":"J. Phys. Chem. Lett."},{"issue":"52","key":"2026081810285530800_cit25","doi-asserted-by":"publisher","first-page":"2410810","DOI":"10.1002\/adfm.202410810","article-title":"Synaptic\nBehavior\nof Iodine-Enriched Copper-Based Perovskite Memristors Developed through\na Sustainable Solution Approach","volume":"34","author":"Dutta","year":"2024","journal-title":"Adv. Funct.\nMater."},{"issue":"7","key":"2026081810285530800_cit26","doi-asserted-by":"publisher","first-page":"072105","DOI":"10.1063\/1.2535528","article-title":"Current Transport\nand Maximum Dielectric Strength of Atomic-Layer-Deposited Ultrathin\nAl2O3 on GaAs","volume":"90","author":"Wu","year":"2007","journal-title":"Appl. Phys.\nLett."},{"issue":"2","key":"2026081810285530800_cit27","doi-asserted-by":"publisher","first-page":"155","DOI":"10.1080\/00018732.2022.2084006","article-title":"Nanoionic\nMemristive Phenomena in\nMetal Oxides: The Valence Change Mechanism","volume":"70","author":"Dittmann","year":"2021","journal-title":"Adv. Phys."},{"issue":"1\u20133","key":"2026081810285530800_cit28","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/S0927-796X(01)00037-7","article-title":"Recent\nAdvances in Schottky Barrier Concepts","volume":"35","author":"Tung","year":"2001","journal-title":"Mater.\nSci. Eng. R Rep."},{"issue":"6","key":"2026081810285530800_cit29","doi-asserted-by":"publisher","first-page":"063002","DOI":"10.1088\/0268-1242\/31\/6\/063002","article-title":"Resistive\nSwitching Memories Based on Metal Oxides: Mechanisms, Reliability\nand Scaling","volume":"31","author":"Ielmini","year":"2016","journal-title":"Semicond. Sci. Technol."},{"issue":"17","key":"2026081810285530800_cit30","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202520665","article-title":"Mixed-dimensional\nCu-based Perovskites for Stable and\nEnergy-efficient Neuromorphic Memristors","volume":"36","author":"Panchanan","year":"2026","journal-title":"Adv.\nFunct. Mater."},{"issue":"2","key":"2026081810285530800_cit31","doi-asserted-by":"publisher","first-page":"2409291","DOI":"10.1002\/advs.202409291","article-title":"Advances in Metal Halide Perovskite\nMemristors: A Review from a Co-design Perspective","volume":"12","author":"Jiang","year":"2025","journal-title":"Adv. Sci."},{"issue":"41","key":"2026081810285530800_cit32","doi-asserted-by":"publisher","first-page":"10793","DOI":"10.1039\/C5TC02270C","article-title":"An Organic\u2013Inorganic\nHybrid Perovskite Logic Gate for Better Computing","volume":"3","author":"Lin","year":"2015","journal-title":"J. Mater. Chem. C"},{"issue":"29","key":"2026081810285530800_cit33","doi-asserted-by":"publisher","first-page":"1700527","DOI":"10.1002\/adma.201700527","article-title":"Iodine Vacancy Redistribution in Organic\u2013Inorganic\nHalide Perovskite Films and Resistive Switching Effects","volume":"29","author":"Zhu","year":"2017","journal-title":"Adv. Mater."},{"issue":"36","key":"2026081810285530800_cit34","doi-asserted-by":"publisher","first-page":"30764","DOI":"10.1021\/acsami.7b08197","article-title":"Enhanced Endurance\nOrganolead Halide Perovskite Resistive\nSwitching Memories Operable under an Extremely Low Bending Radius","volume":"9","author":"Choi","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"1","key":"2026081810285530800_cit35","doi-asserted-by":"publisher","first-page":"16586","DOI":"10.1038\/s41598-017-16805-4","article-title":"Memory\nEffect Behavior\nwith Respect to the Crystal Grain Size in the Organic-Inorganic Hybrid\nPerovskite Nonvolatile Resistive Random Access Memory","volume":"7","author":"Heo","year":"2017","journal-title":"Sci. Rep."},{"issue":"3","key":"2026081810285530800_cit36","doi-asserted-by":"publisher","first-page":"1704665","DOI":"10.1002\/adfm.201704665","article-title":"Light-Responsive Ion-Redistribution-Induced\nResistive Switching in\nHybrid Perovskite Schottky Junctions","volume":"28","author":"Guan","year":"2018","journal-title":"Adv. Funct.\nMater."},{"issue":"15","key":"2026081810285530800_cit37","doi-asserted-by":"publisher","first-page":"1800080","DOI":"10.1002\/adfm.201800080","article-title":"Low-Voltage,\nOptoelectronic CH3NH3PbI3-xClx Memory with Integrated Sensing and Logic Operations","volume":"28","author":"Zhou","year":"2018","journal-title":"Adv. Funct. Mater."},{"key":"2026081810285530800_cit38","doi-asserted-by":"publisher","first-page":"106","DOI":"10.1016\/j.orgel.2019.03.019","article-title":"Probe-Induced Resistive\nSwitching Memory Based on Organic-Inorganic Lead Halide Perovskite\nMaterials","volume":"69","author":"Shaban","year":"2019","journal-title":"Org. Electron."},{"issue":"21","key":"2026081810285530800_cit39","doi-asserted-by":"publisher","first-page":"1804841","DOI":"10.1002\/adma.201804841","article-title":"High-Performance Solution-Processed\nOrgano-Metal Halide\nPerovskite Unipolar Resistive Memory Devices in a Cross-Bar Array\nStructure","volume":"31","author":"Kang","year":"2019","journal-title":"Adv. Mater."},{"issue":"11","key":"2026081810285530800_cit40","doi-asserted-by":"publisher","first-page":"3695","DOI":"10.1021\/acsaelm.0c00674","article-title":"Triple-Cation\nPerovskite Resistive Switching Memory with Enhanced Endurance and\nRetention","volume":"2","author":"Huang","year":"2020","journal-title":"ACS Appl. Electron. Mater."},{"issue":"38","key":"2026081810285530800_cit41","doi-asserted-by":"publisher","first-page":"21757","DOI":"10.1039\/D1CP02878B","article-title":"Enhanced Resistive\nSwitching Performance\nin Yttrium-Doped CH3NH3PbI3 Perovskite\nDevices","volume":"23","author":"Luo","year":"2021","journal-title":"Phys. Chem. Chem. Phys."},{"issue":"12","key":"2026081810285530800_cit42","doi-asserted-by":"publisher","first-page":"6908","DOI":"10.1021\/acsaelm.3c01324","article-title":"Three-Dimensional\/Two-Dimensional\nPerovskite-Resistive Random-Access Memory with Low SET Voltage and\nHigh Stability","volume":"5","author":"Pan","year":"2023","journal-title":"ACS Appl. Electron. Mater."},{"issue":"9","key":"2026081810285530800_cit43","doi-asserted-by":"publisher","first-page":"2453","DOI":"10.1021\/acs.jpclett.3c03558","article-title":"In Situ Unveiling\nof the Resistive Switching Mechanism of Halide Perovskite-Based Memristors","volume":"15","author":"Luo","year":"2024","journal-title":"J. Phys. Chem. Lett."},{"issue":"5","key":"2026081810285530800_cit44","doi-asserted-by":"publisher","first-page":"2300475","DOI":"10.1002\/aelm.202300475","article-title":"Perovskite\nThin Single Crystal for a High Performance and Long Endurance Memristor","volume":"10","author":"Fernandez-Guillen","year":"2024","journal-title":"Adv. Electron. Mater."},{"issue":"4","key":"2026081810285530800_cit45","doi-asserted-by":"publisher","first-page":"1358","DOI":"10.1021\/acs.nanolett.4c04783","article-title":"Nonlocalized Conductive Paths Construction\nand In-Depth Mechanism Analysis for the Robust Resistive Switching\nin Halide Perovskites","volume":"25","author":"Yan","year":"2025","journal-title":"Nano Lett."},{"issue":"2","key":"2026081810285530800_cit46","doi-asserted-by":"publisher","first-page":"1700662","DOI":"10.1002\/advs.201700662","article-title":"Formation\nand Diffusion of Metal Impurities in Perovskite Solar Cell material\nCH3NH3PbI3: Implications on Solar\nCell Degradation and Choice of Electrode","volume":"5","author":"Ming","year":"2018","journal-title":"Adv.\nSci."},{"issue":"12","key":"2026081810285530800_cit47","doi-asserted-by":"publisher","first-page":"40","DOI":"10.1021\/ie50660a008","article-title":"Attractive\nForces at Interfaces","volume":"56","author":"Fowkes","year":"1964","journal-title":"Ind. Eng. Chem."},{"issue":"52","key":"2026081810285530800_cit48","doi-asserted-by":"publisher","first-page":"9343","DOI":"10.1039\/D5CC01566A","article-title":"Tip-effect-driven\nField Enhancement and Faster Mass Transport and Their Advanced Applications","volume":"61","author":"Zhou","year":"2025","journal-title":"Chem. Commun."},{"issue":"22","key":"2026081810285530800_cit49","doi-asserted-by":"publisher","first-page":"10750","DOI":"10.1021\/acsaem.4c02567","article-title":"Reducing\nThermal Degradation of Perovskite Solar Cells during Vacuum Lamination\nby Internal Diffusion Barriers","volume":"7","author":"Witteck","year":"2024","journal-title":"ACS Appl. Energy\nMater."},{"issue":"3","key":"2026081810285530800_cit50","doi-asserted-by":"publisher","first-page":"345","DOI":"10.1039\/D5EL00051C","article-title":"Barrier Layer Design Reduces Top Electrode Ion Migration\nin Perovskite Solar Cells","volume":"1","author":"Penukula","year":"2025","journal-title":"EES Sol."},{"issue":"3","key":"2026081810285530800_cit51","doi-asserted-by":"publisher","first-page":"101801","DOI":"10.1016\/j.joule.2024.12.002","article-title":"Carboxyl-functionalized\nPerovskite Enables ALD Growth of a Compact and Uniform Ion Migration\nBarrier","volume":"9","author":"Choi","year":"2025","journal-title":"Joule"},{"issue":"15","key":"2026081810285530800_cit52","doi-asserted-by":"publisher","first-page":"10403","DOI":"10.1021\/acs.chemrev.7b00115","article-title":"Toward Safe\nLithium\nMetal Anode in Rechargeable Batteries: a Review","volume":"117","author":"Cheng","year":"2017","journal-title":"Chem. Rev."},{"issue":"2","key":"2026081810285530800_cit53","doi-asserted-by":"publisher","first-page":"317","DOI":"10.1016\/j.matt.2019.05.016","article-title":"Artificial Interphases\nfor Highly Stable Lithium Metal Anode","volume":"1","author":"Xu","year":"2019","journal-title":"Matter"},{"issue":"9","key":"2026081810285530800_cit54","doi-asserted-by":"publisher","first-page":"2701","DOI":"10.1039\/C9CS00883G","article-title":"Regulating Electrodeposition\nMorphology\nof Lithium: Towards Commercially Relevant Secondary Li Metal Batteries","volume":"49","author":"Zheng","year":"2020","journal-title":"Chem. Soc. Rev."},{"issue":"8","key":"2026081810285530800_cit55","doi-asserted-by":"publisher","first-page":"618","DOI":"10.1038\/nnano.2014.152","article-title":"Interconnected\nHollow Carbon Nanospheres for Stable Lithium Metal Anodes","volume":"9","author":"Zheng","year":"2014","journal-title":"Nat. Nanotechnol."},{"issue":"24","key":"2026081810285530800_cit56","doi-asserted-by":"publisher","first-page":"12297","DOI":"10.1039\/C7TA03116E","article-title":"Lithium\nMetal Protected by Atomic Layer Deposition Metal Oxide for High Performance\nAnodes","volume":"5","author":"Chen","year":"2017","journal-title":"J. Mater. Chem. A"},{"issue":"7","key":"2026081810285530800_cit57","doi-asserted-by":"publisher","first-page":"811","DOI":"10.1038\/s41560-025-01767-z","article-title":"Stabilizing Lithium-Metal\nElectrodes with Polymer Coatings","volume":"10","author":"Huang","year":"2025","journal-title":"Nat. Energy"},{"issue":"1","key":"2026081810285530800_cit58","doi-asserted-by":"publisher","first-page":"6152","DOI":"10.1038\/ncomms7152","article-title":"A Dendrite-Suppressing\nComposite Ion Conductor from Aramid Nanofibres","volume":"6","author":"Tung","year":"2015","journal-title":"Nat. Commun."}],"container-title":["ACS Nano"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsnano.6c04620","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/ancac3\/article-pdf\/20\/32\/22562\/66422330\/acsnano.6c04620.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/ancac3\/article-pdf\/20\/32\/22562\/66422330\/acsnano.6c04620.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T16:11:00Z","timestamp":1787069460000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/ancac3\/article\/20\/32\/22562\/5246578\/From-Filamentary-Failure-to-Durable-Halide"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,5]]},"references-count":58,"journal-issue":{"issue":"32","published-online":{"date-parts":[[2026,8,5]]},"published-print":{"date-parts":[[2026,8,18]]}},"URL":"https:\/\/doi.org\/10.1021\/acsnano.6c04620","relation":{},"ISSN":["1936-0851","1936-086X"],"issn-type":[{"value":"1936-0851","type":"print"},{"value":"1936-086X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,5]]}}}