{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,7]],"date-time":"2026-09-07T20:12:49Z","timestamp":1788811969437,"version":"build-2803163510"},"reference-count":171,"publisher":"American Chemical Society (ACS)","issue":"28","license":[{"start":{"date-parts":[[2026,7,10]],"date-time":"2026-07-10T00:00:00Z","timestamp":1783641600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,7,10]],"date-time":"2026-07-10T00:00:00Z","timestamp":1783641600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,7,10]],"date-time":"2026-07-10T00:00:00Z","timestamp":1783641600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100011152","name":"Suzhou Institute of Nanotechnology, Chinese Academy of Sciences","doi-asserted-by":"publisher","award":["F2208"],"award-info":[{"award-number":["F2208"]}],"id":[{"id":"10.13039\/501100011152","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2023M742559"],"award-info":[{"award-number":["2023M742559"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2025M780549"],"award-info":[{"award-number":["2025M780549"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100005145","name":"Basic Research Program of Jiangsu Province","doi-asserted-by":"publisher","award":["BK20232009"],"award-info":[{"award-number":["BK20232009"]}],"id":[{"id":"10.13039\/501100005145","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62274174"],"award-info":[{"award-number":["62274174"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Jiangsu Funding Program for Excellent Postdoctoral Talent","award":["2024ZB327"],"award-info":[{"award-number":["2024ZB327"]}]},{"name":"Suzhou Key Core Technology Project: Leading the Charge with Open Competition","award":["SYG2024104"],"award-info":[{"award-number":["SYG2024104"]}]},{"name":"Frontier Technology Research and Development Program of Jiangsu Province","award":["BF2025032"],"award-info":[{"award-number":["BF2025032"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,7,21]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>The development of electronic technologies capable of withstanding high-energy cosmic radiation is urgently needed to enable scientific exploration in increasingly extreme application scenarios, such as nuclear facilities, deep-space missions, and orbiting space stations. Conventional silicon-based integrated circuits (ICs) typically require additional radiation-hardening processes after design, resulting in structures that are more complex than standard devices. Moreover, many standard silicon-based ICs remain susceptible to total ionizing dose (TID)-induced degradation without dedicated hardening, leading to limited radiation tolerance. Consequently, the development of new materials, devices, and ICs with intrinsic radiation tolerance has emerged as a critical research frontier in recent years. Single-walled carbon nanotubes (SWCNTs) offer significant inherent advantages over conventional silicon-based technologies owing to their strong sp2 carbon\u2013carbon bonds, one-dimensional quantum confinement, and minimal charge-trapping interfaces. This Review highlights the progress made at the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), in the development of semiconducting SWCNTs (sc-SWCNTs) as well as radiation-hardened SWCNT field-effect transistor (FET) devices and ICs. In this field, researchers at SINANO have also authored several books on carbon-based electronic materials, devices, and circuits, alongside publishing more than 200 papers and being granted more than 50 patents. Specifically, this Review covers the purification of sc-SWCNTs and single-chirality sc-SWCNTs by both commercial and self-designed conjugated organic compounds; the deposition of high-quality networked and aligned sc-SWCNT thin films on flexible and rigid substrates; and the design and fabrication of record-performance radiation-hardened SWCNT FET devices and ICs. Finally, the remaining challenges in sc-SWCNT materials, FET devices, and ICs for reliable radiation-hardened applications are discussed, followed by perspectives on future practical deployment in space and other nuclear extreme environments.<\/jats:p>","DOI":"10.1021\/acsnano.6c08137","type":"journal-article","created":{"date-parts":[[2026,7,10]],"date-time":"2026-07-10T16:25:09Z","timestamp":1783700709000},"page":"19873-19905","source":"Crossref","is-referenced-by-count":0,"title":["Trajectory\nof Radiation-Hardened Electronics: From\nCarbon Nanotubes to Integrated Circuits at the Suzhou Institute of\nNano-Tech and Nano-Bionics"],"prefix":"10.1021","volume":"20","author":[{"given":"Nianzi","family":"Sui","sequence":"first","affiliation":[{"name":"University of Science and Technology of China , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kaixiang","family":"Kang","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yaqing","family":"Hou","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Harbin Institute of Technology , , , ,","place":["Harbin, Heilongjiang, P.R. China, 150001"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Siyi","family":"Zhu","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Suyun","family":"Wang","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chengyong","family":"Xu","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shuangshuang","family":"Shao","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5548-5469","authenticated-orcid":true,"given":"Jianwen","family":"Zhao","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , , No. 398 Ruoshui Road, Suzhou Industrial Park , , ,","place":["Suzhou, Jiangsu, P.R. China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,7,10]]},"reference":[{"key":"2026090715152827900_cit1","doi-asserted-by":"publisher","first-page":"168463","DOI":"10.1016\/j.nima.2023.168463","article-title":"Total Ionizing Dose Effects on CMOS Image Sensor for\nthe Ultrasat Space Mission","volume":"1054","author":"Berlea","year":"2023","journal-title":"Nucl. Instrum. Methods\nA"},{"key":"2026090715152827900_cit2","first-page":"475","article-title":"Applications\nof Nuclear Electronics in Field of Space\nScience Exploration","volume":"58","author":"Liu","year":"2024","journal-title":"At. Energy Sci. Technol."},{"issue":"1","key":"2026090715152827900_cit3","doi-asserted-by":"publisher","first-page":"3616902","DOI":"10.1155\/2024\/3616902","article-title":"Overview on Radiation\nDamage Effects and Protection Techniques in\nMicroelectronic Devices","volume":"2024","author":"Ren","year":"2024","journal-title":"Sci. Technol. Nucl.\nInstall."},{"issue":"1","key":"2026090715152827900_cit4","doi-asserted-by":"publisher","first-page":"460","DOI":"10.1038\/s41467-023-36076-0","article-title":"Sub-10\nfJ\/bit Radiation-Hard Nanoelectromechanical\nNon-Volatile Memory","volume":"14","author":"Lee","year":"2023","journal-title":"Nat. Commun."},{"issue":"2","key":"2026090715152827900_cit5","doi-asserted-by":"publisher","first-page":"2200539","DOI":"10.1002\/admt.202200539","article-title":"Radiation-Tolerant\nElectronic Devices Using Wide Bandgap Semiconductors","volume":"8","author":"Muhammad","year":"2023","journal-title":"Adv. Mater. Technol."},{"key":"2026090715152827900_cit6","doi-asserted-by":"publisher","first-page":"117096","DOI":"10.1016\/j.mseb.2023.117096","article-title":"Radiation-Induced\nDegradation of Silicon Carbide MOSFETs - a Review","volume":"300","author":"Baba","year":"2024","journal-title":"Mater. Sci. Eng. B"},{"key":"2026090715152827900_cit7","doi-asserted-by":"publisher","first-page":"2181","DOI":"10.1109\/TNS.2007.910873","article-title":"Enhanced Degradation in Power MOSFET Devices Due to\nHeavy Ion Irradiation","volume":"54","author":"Felix","year":"2007","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"1","key":"2026090715152827900_cit8","doi-asserted-by":"publisher","first-page":"362","DOI":"10.1038\/s42005-024-01856-7","article-title":"Measuring\nthe Radiation Hardness\nof Terahertz Devices for Space Applications","volume":"7","author":"He","year":"2024","journal-title":"Commun. Phys."},{"key":"2026090715152827900_cit9","doi-asserted-by":"publisher","first-page":"1753","DOI":"10.1109\/TNS.2024.3406511","article-title":"Effects of\nX-Ray and \u03b3-Ray\nIrradiations on 2-D-Planar and 3-D-Stacked CMOS SPADs","volume":"71","author":"Jouni","year":"2024","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit10","doi-asserted-by":"publisher","first-page":"1009","DOI":"10.3390\/cryst12071009","article-title":"Review of\nRadiation-Induced\nEffects on \u0392-Ga2O3 Materials and Devices","volume":"12","author":"Manikanthababu","year":"2022","journal-title":"Crystals"},{"key":"2026090715152827900_cit11","doi-asserted-by":"publisher","first-page":"243","DOI":"10.1038\/s41928-021-00562-4","article-title":"Low-Power\nElectronic Technologies for Harsh Radiation Environments","volume":"4","author":"Prinzie","year":"2021","journal-title":"Nat. Electron."},{"key":"2026090715152827900_cit12","doi-asserted-by":"publisher","first-page":"3096","DOI":"10.1109\/TNS.2008.2007124","article-title":"Enhanced\nProton and Neutron Induced Degradation and Its Impact on Hardness\nAssurance Testing","volume":"55","author":"Shaneyfelt","year":"2008","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit13","doi-asserted-by":"publisher","first-page":"1531","DOI":"10.1109\/TNS.2014.2315852","article-title":"Microdose\nInduced Drain Leakage Effects in Power Trench MOSFETs: Experiment\nand Modeling","volume":"61","author":"Zebrev","year":"2014","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit14","doi-asserted-by":"publisher","first-page":"346","DOI":"10.1038\/s41586-025-10027-9","article-title":"Radiation-Tolerant\nAtomic-Layer-Scale RF System for Spaceborne Communication","volume":"650","author":"Zhu","year":"2026","journal-title":"Nature"},{"key":"2026090715152827900_cit15","doi-asserted-by":"publisher","first-page":"318","DOI":"10.1109\/EDR.2025.3649435","article-title":"Review of Radiation Effects in Semiconductors: Displacement\nDefect,\nTotal Ionizing Dose, and Single Event Effects","volume":"2","author":"Ha","year":"2025","journal-title":"IEEE Electron Dev. Rev."},{"issue":"1","key":"2026090715152827900_cit16","doi-asserted-by":"publisher","first-page":"3882","DOI":"10.1038\/s41467-025-59225-z","article-title":"Radiation-Hardened\nDendritic-Like Nanocomposite Films\nwith Ultrahigh Capacitive Energy Density","volume":"16","author":"Liu","year":"2025","journal-title":"Nat.\nCommun."},{"issue":"4","key":"2026090715152827900_cit17","doi-asserted-by":"publisher","first-page":"S04S01","DOI":"10.1029\/2004SW000065","article-title":"Radiation\nBelt Representation of the Energetic Electron Environment: Model and\nData Synthesis Using the Salammbo\u0302 Radiation Belt Transport\nCode and Los Alamos Geosynchronous and GPS Energetic Particle Data","volume":"3","author":"Bourdarie","year":"2005","journal-title":"Space Weather"},{"key":"2026090715152827900_cit18","doi-asserted-by":"publisher","first-page":"1354","DOI":"10.1016\/j.actaastro.2025.07.055","article-title":"Systematic Review of\nEngineering and Testing Approaches for Radiation Hardness Assurance\nin Commercial Space Avionics","volume":"238","author":"Dijks","year":"2026","journal-title":"Acta Astronaut."},{"issue":"1","key":"2026090715152827900_cit19","doi-asserted-by":"publisher","first-page":"59","DOI":"10.1007\/s43939-025-00185-y","article-title":"Radiation-Induced\nDegradation in Optoelectronic Devices for Satellite Applications:\nA Review","volume":"5","author":"Sulaiman","year":"2025","journal-title":"Discover Mater."},{"key":"2026090715152827900_cit20","doi-asserted-by":"publisher","first-page":"5759","DOI":"10.1021\/acsaelm.4c00782","article-title":"Displacement\nDamage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-around\nField Effect Transistors","volume":"6","author":"Titze","year":"2024","journal-title":"ACS Appl. Electron.\nMater."},{"key":"2026090715152827900_cit21","doi-asserted-by":"publisher","first-page":"104722","DOI":"10.1016\/j.mejo.2020.104722","article-title":"TID Effects on I-V\nCharacteristics of Bulk CMOS STD and ELT-Based Devices in 600 nm","volume":"97","author":"Vaz","year":"2020","journal-title":"Microelectron. J."},{"key":"2026090715152827900_cit22","doi-asserted-by":"publisher","first-page":"677","DOI":"10.1109\/TNS.2021.3059594","article-title":"Total Ionizing\nDose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors","volume":"68","author":"Brewer","year":"2021","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit23","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/REDW.2015.7336740","article-title":"Total\nIonizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies","volume-title":"2015 IEEE Radiation Effects Data Workshop (REDW), Boston,\nMA, USA","author":"Hughes","year":"2015"},{"key":"2026090715152827900_cit24","doi-asserted-by":"publisher","first-page":"104210","DOI":"10.1016\/j.net.2026.104210","article-title":"Investigation of \u0391 Particle Induced Damage and Annealing Behavior\nin CMOS Active Pixel Sensors for Radiation Detection Applications","volume":"58","author":"Li","year":"2026","journal-title":"Nucl. Eng. Technol."},{"key":"2026090715152827900_cit25","doi-asserted-by":"publisher","first-page":"282","DOI":"10.1109\/TNS.2021.3119536","article-title":"Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation","volume":"69","author":"Teng","year":"2022","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit26","doi-asserted-by":"publisher","first-page":"115296","DOI":"10.1016\/j.microrel.2023.115296","article-title":"Total Ionizing Dose and Single Event\nEffect Response of 22 nm Ultra-Thin\nBody and Buried Oxide Fully Depleted Silicon-on-Insulator Technology","volume":"152","author":"Yin","year":"2024","journal-title":"Microelectron. Reliab."},{"issue":"1","key":"2026090715152827900_cit27","doi-asserted-by":"publisher","first-page":"1896","DOI":"10.1038\/s41467-026-68673-0","article-title":"Boosting Carbon Nanotube Transistors\nthrough \u03b3-Ray Irradiation","volume":"17","author":"Zhang","year":"2026","journal-title":"Nat. Commun."},{"issue":"1","key":"2026090715152827900_cit28","doi-asserted-by":"publisher","first-page":"2204537","DOI":"10.1002\/smll.202204537","article-title":"Ultra-Strong\nComprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics","volume":"19","author":"Zhu","year":"2023","journal-title":"Small"},{"key":"2026090715152827900_cit29","doi-asserted-by":"publisher","first-page":"9685685","DOI":"10.1155\/2017\/9685685","article-title":"Total Ionizing\nDose Effects of Si\nVertical Diffused MOSFET with SiO2 and Si3N4\/SiO2 Gate Dielectrics","volume":"2017","author":"Mo","year":"2017","journal-title":"Act.\nPassive Electron. Compon."},{"key":"2026090715152827900_cit30","doi-asserted-by":"publisher","first-page":"2694","DOI":"10.1109\/TNS.2014.2342872","article-title":"Characterization\nof Heavy-Ion-Induced\nSingle-Event Effects in 65 nm Bulk CMOS ASIC Test Chips","volume":"61","author":"Chen","year":"2014","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit31","doi-asserted-by":"publisher","first-page":"1571","DOI":"10.1109\/TNS.2021.3076977","article-title":"TID Degradation Mechanisms in 16-nm\nBulk FinFETs Irradiated to Ultrahigh Doses","volume":"68","author":"Ma","year":"2021","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit32","doi-asserted-by":"publisher","first-page":"1176","DOI":"10.1109\/TNS.2021.3127567","article-title":"Characterization\nof Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk\nFinFET SRAMs","volume":"69","author":"Chi","year":"2022","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit33","doi-asserted-by":"publisher","first-page":"2042","DOI":"10.1109\/TNS.2023.3237179","article-title":"Total-Ionizing-Dose\nEffects at Ultrahigh Doses in AlGaN\/GaN HEMTs","volume":"70","author":"Bonaldo","year":"2023","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit34","doi-asserted-by":"publisher","first-page":"064001","DOI":"10.35848\/1347-4065\/acddb4","article-title":"Degradation of Vertical\nGaN Diodes During Proton and Xenon-Ion Irradiation","volume":"62","author":"Okumura","year":"2023","journal-title":"Jpn. J. Appl. Phys."},{"key":"2026090715152827900_cit35","article-title":"Radiation Performance\nof New Semiconductor Power Devices for the LHC Experiment Upgrades","volume-title":"Proceedings, 11th International Conference on Large\nScale Applications and Radiation Hardness of Semiconductor Detectors\n(RD 13) : Florence, Florence, ITALY, July 3-5, 2013, 007; Proceedings\nof Science","author":"Abbate","year":"2013"},{"key":"2026090715152827900_cit36","doi-asserted-by":"publisher","first-page":"122701","DOI":"10.1088\/1674-4926\/24090027","article-title":"Displacement Damage\nEffects in MoS2-Based Electronics","volume":"45","author":"He","year":"2024","journal-title":"J. Semicond."},{"issue":"1","key":"2026090715152827900_cit37","doi-asserted-by":"publisher","first-page":"4855","DOI":"10.1038\/s41467-023-40588-0","article-title":"Universal\nRadiation Tolerant Semiconductor","volume":"14","author":"Azarov","year":"2023","journal-title":"Nat. Commun."},{"key":"2026090715152827900_cit38","doi-asserted-by":"publisher","first-page":"070503","DOI":"10.1063\/5.0105173","article-title":"Perspective\non Radiation Effects in Nanoscale Metal-Oxide-Semiconductor Devices","volume":"121","author":"Fleetwood","year":"2022","journal-title":"Appl. Phys. Lett."},{"issue":"42","key":"2026090715152827900_cit39","doi-asserted-by":"publisher","first-page":"2405885","DOI":"10.1002\/adfm.202405885","article-title":"Tailoring the Electronic Structures\nand Spectral Properties of ZnO with Irradiation Defects Generated\nunder Intense Electronic Excitation: A Combined Experimental and DFT\nApproach","volume":"34","author":"Han","year":"2024","journal-title":"Adv. Funct. Mater."},{"issue":"31","key":"2026090715152827900_cit40","doi-asserted-by":"publisher","first-page":"71190","DOI":"10.1002\/advs.71190","article-title":"Unraveling the Atomic Mechanism of the Crystalline\nPhase-Dependent Structural Features and Special Spectral Design of\n\u03b1-, \u03b2-, and \u03b5-Ga2O3","volume":"12","author":"Han","year":"2025","journal-title":"Adv. Sci."},{"key":"2026090715152827900_cit41","doi-asserted-by":"publisher","first-page":"10131","DOI":"10.1021\/acs.nanolett.5c02067","article-title":"Unveiling Radiation-Tolerant\nThickness in a-IGZO Thin-Film Transistors with Sub-10 nm Film and\nRestoring Abnormalities Via Energy-Efficient Electrothermal Annealing","volume":"25","author":"Jung","year":"2025","journal-title":"Nano Lett."},{"key":"2026090715152827900_cit42","doi-asserted-by":"publisher","DOI":"10.1002\/admt.202500569","article-title":"Radiation Response\nof Ga2O3 Mosfets Probed Via Focused Particle\nBeams","author":"Titze","year":"2025","journal-title":"Adv. Mater. Technol."},{"issue":"8","key":"2026090715152827900_cit43","doi-asserted-by":"publisher","first-page":"2300906","DOI":"10.1002\/aelm.202300906","article-title":"Direct Observation\nfor Distinct Behaviors of Gamma-Ray Irradiation-Induced Subgap Density-of-States\nin Amorphous Ingazno TFTs by Multiple-Wavelength Light Source","volume":"10","author":"Yoo","year":"2024","journal-title":"Adv. Electron. Mater."},{"key":"2026090715152827900_cit44","doi-asserted-by":"publisher","first-page":"4325","DOI":"10.1109\/TNS.1981.4335723","article-title":"The Effects of Nitride\nPassivation on the Total Dose Radiation Resistance of a Precision\nOperational Amplifier","volume":"28","author":"Condito","year":"1981","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit45","doi-asserted-by":"publisher","first-page":"115327","DOI":"10.1063\/1.5051813","article-title":"Electron-Beam Radiation\nInduced Degradation\nof Silicon Nitride and Its Impact to Semiconductor Failure Analysis\nby TEM","volume":"8","author":"Liu","year":"2018","journal-title":"AIP Adv."},{"key":"2026090715152827900_cit46","doi-asserted-by":"publisher","first-page":"2203","DOI":"10.1109\/TNS.1975.4328106","article-title":"Thin Film Silicon on Silicon Nitride\nfor Radiation Hardened Dielectrically Isolated Misfet\u2019s","volume":"22","author":"Neamen","year":"1975","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit47","doi-asserted-by":"publisher","first-page":"1798","DOI":"10.1109\/TNS.2024.3415502","article-title":"A Comparison of\nTotal-Ionizing-Dose Effects in Silicon and Silicon-Nitride Waveguides","volume":"71","author":"Ringel","year":"2024","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit48","doi-asserted-by":"publisher","first-page":"17","DOI":"10.1016\/j.nimb.2020.03.010","article-title":"Radiation\nResistance of Nanolayered\nSilicon Nitride Capacitors","volume":"471","author":"Romanova","year":"2020","journal-title":"Nucl. Instrum. Meth.\nB"},{"key":"2026090715152827900_cit49","doi-asserted-by":"publisher","first-page":"1542","DOI":"10.1109\/TNS.2025.3550647","article-title":"Total Ionizing Dose\nEffects on Silicon\nNitride Photonic Integrated Microring Resonators and Mach-Zehnder\nInterferometers","volume":"72","author":"Terrasanta","year":"2025","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit50","doi-asserted-by":"publisher","first-page":"2126","DOI":"10.3390\/nano12132126","article-title":"Research on\nthe Synergistic Effect of Total Ionization and Displacement Dose in\nGaN HEMT Using Neutron and Gamma-Ray Irradiation","volume":"12","author":"Chen","year":"2022","journal-title":"Nanomaterials"},{"key":"2026090715152827900_cit51","doi-asserted-by":"publisher","first-page":"110351","DOI":"10.1016\/j.mssp.2025.110351","article-title":"Radiation Effects and\nHardening Strategies of GaN HEMT Power Devices","volume":"205","author":"Duan","year":"2026","journal-title":"Mater. Sci. Semicond. Process."},{"key":"2026090715152827900_cit52","doi-asserted-by":"publisher","first-page":"1105","DOI":"10.1109\/TNS.2022.3147143","article-title":"Radiation\nEffects in AlGaN\/GaN HEMTs","volume":"69","author":"Fleetwood","year":"2022","journal-title":"IEEE Trans. Nucl.\nSci."},{"key":"2026090715152827900_cit53","doi-asserted-by":"publisher","first-page":"115445","DOI":"10.1016\/j.microrel.2024.115445","article-title":"Ionizing Radiation Defects and Reliability\nof Gallium Nitride-Based III-V Semiconductor Devices: A Comprehensive\nReview","volume":"159","author":"Sandeep","year":"2024","journal-title":"Microelectron. Reliab."},{"key":"2026090715152827900_cit54","doi-asserted-by":"publisher","first-page":"103902","DOI":"10.1016\/j.net.2025.103902","article-title":"Degradation and Failure\nMechanisms of P-GaN HEMTs in Single and Complex\nRadiation Environments","volume":"58","author":"Sun","year":"2026","journal-title":"Nucl. Eng. Technol."},{"key":"2026090715152827900_cit55","doi-asserted-by":"publisher","first-page":"1447","DOI":"10.1039\/D0NH00465K","article-title":"Are Two-Dimensional\nMaterials Radiation Tolerant?","volume":"5","author":"Krasheninnikov","year":"2020","journal-title":"Nanoscale Horiz."},{"issue":"6","key":"2026090715152827900_cit56","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.202500759","article-title":"Irradiation-Resistant Heterostructures\nBased on Monolayer MoS2","volume":"223","author":"Sangiorgi","year":"2026","journal-title":"Phys. Status\nSolidi"},{"key":"2026090715152827900_cit57","doi-asserted-by":"publisher","first-page":"0403","DOI":"10.34133\/space.0403","article-title":"Multiscale Modeling Techniques in\nthe Study of 2-Dimensional Materials under Ionizing Radiation","volume":"6","author":"Tang","year":"2026","journal-title":"Space-Sci. Technol. China"},{"issue":"45","key":"2026090715152827900_cit58","doi-asserted-by":"publisher","first-page":"2404615","DOI":"10.1002\/adfm.202404615","article-title":"Roadmap toward\nControlled Ion Beam-Induced Defects\nin 2d Materials","volume":"34","author":"Telkhozhayeva","year":"2024","journal-title":"Adv. Funct. Mater."},{"issue":"1","key":"2026090715152827900_cit59","doi-asserted-by":"publisher","first-page":"44321","DOI":"10.1038\/s41598-025-28311-z","article-title":"Low Power and High-Speed Quadrate\nNode Upset Tolerant\nLatch Design Using CNT FET","volume":"15","author":"Asiya","year":"2025","journal-title":"Sci. Rep."},{"issue":"9","key":"2026090715152827900_cit60","doi-asserted-by":"publisher","first-page":"700","DOI":"10.1149\/MA2017-01\/9\/700","article-title":"(Invited)\nRadiation-Hard Semiconducting Carbon Nanotube Thin-Film Complementary\nCircuits","volume":"MA2017-01","author":"Hersam","year":"2017","journal-title":"Meet. Abstr."},{"key":"2026090715152827900_cit61","doi-asserted-by":"publisher","first-page":"641","DOI":"10.1007\/s42341-025-00659-z","article-title":"Radiations Effects\non Advanced Multi-Gate 3D Devices and Materials","volume":"26","author":"Kumar","year":"2025","journal-title":"Trans. Electr. Electron. Mater."},{"key":"2026090715152827900_cit62","doi-asserted-by":"publisher","first-page":"20240573","DOI":"10.1587\/elex.21.20240573","article-title":"Analyzing the Synergistic Effect of Ionization and\nDisplacement Damage in Carbon Nanotube Field-Effect Transistors Using\nProtons Irradiation","volume":"22","author":"Li","year":"2025","journal-title":"IEICE Electron. Expr."},{"key":"2026090715152827900_cit63","doi-asserted-by":"publisher","first-page":"93941","DOI":"10.1109\/ACCESS.2025.3572530","article-title":"Investigating\nthe Electric Field Influence on Total\nIonization Dose Effects in Space Radiation for Carbon Nanotube Field\nEffect Transistors","volume":"13","author":"Liang","year":"2025","journal-title":"IEEE Access"},{"key":"2026090715152827900_cit64","doi-asserted-by":"publisher","first-page":"94907540","DOI":"10.26599\/NR.2025.94907540","article-title":"Single Event Effects\nin Carbon Nanotube Electronics","volume":"18","author":"Liu","year":"2025","journal-title":"Nano Res."},{"key":"2026090715152827900_cit65","doi-asserted-by":"publisher","first-page":"10936","DOI":"10.1021\/acsami.2c20005","article-title":"Heavy Ion Displacement Damage Effect\nin Carbon Nanotube Field Effect\nTransistors","volume":"15","author":"Lu","year":"2023","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026090715152827900_cit66","doi-asserted-by":"publisher","first-page":"1350","DOI":"10.1109\/TNS.2025.3543678","article-title":"Quantification\nand Mechanism Analysis of Total-Ionizing-Dose Effect in Top-Gate CNT\nFETs","volume":"72","author":"Yang","year":"2025","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"5","key":"2026090715152827900_cit67","doi-asserted-by":"publisher","first-page":"058501-1","DOI":"10.7498\/aps.74.20241670","article-title":"X-ray Irradiation\nEffects of Carbon\nNanotube Field-Effect Transistors","volume":"74","author":"Zeng","year":"2025","journal-title":"Acta Phys.\nSin."},{"issue":"34","key":"2026090715152827900_cit68","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adw0024","article-title":"Large-Scale Complementary Carbon\nNanotube Integrated Circuits for Harsh Radiation Environments","volume":"11","author":"Zhang","year":"2025","journal-title":"Sci. Adv."},{"key":"2026090715152827900_cit69","doi-asserted-by":"publisher","first-page":"112002","DOI":"10.1088\/1674-4926\/42\/11\/112002","article-title":"Radiation-Hardened\nProperty of Single-Walled Carbon Nanotube Film-Based Field-Effect\nTransistors under Low-Energy Proton Irradiation","volume":"42","author":"Zhang","year":"2021","journal-title":"J. Semicond."},{"issue":"10","key":"2026090715152827900_cit70","doi-asserted-by":"publisher","first-page":"105121","DOI":"10.1063\/1.5111436","article-title":"Radiation Effects in\nPrinted Flexible Single-Walled Carbon Nanotube Thin-Film Transistors","volume":"9","author":"Zhao","year":"2019","journal-title":"AIP Adv."},{"key":"2026090715152827900_cit71","doi-asserted-by":"publisher","first-page":"473001","DOI":"10.1088\/1361-648X\/ae19b8","article-title":"Emerging Transistors\nand Magnetic Memories for Harsh Radiation Environments","volume":"37","author":"Zhou","year":"2025","journal-title":"J. Phys.: Condens. Matter"},{"issue":"8","key":"2026090715152827900_cit72","doi-asserted-by":"publisher","first-page":"1181","DOI":"10.1088\/0034-4885\/62\/8\/201","article-title":"Irradiation\nEffects in Carbon Nanostructures","volume":"62","author":"Banhart","year":"1999","journal-title":"Rep. Prog.\nPhys."},{"key":"2026090715152827900_cit73","doi-asserted-by":"publisher","first-page":"5675","DOI":"10.1088\/0957-4484\/17\/22\/023","article-title":"Radiation\nHardness of the Electrical Properties of Carbon Nanotube Network Field\nEffect Transistors under High-Energy Proton Irradiation","volume":"17","author":"Hong","year":"2006","journal-title":"Nanotechnology"},{"key":"2026090715152827900_cit74","doi-asserted-by":"publisher","first-page":"355","DOI":"10.1016\/j.nimb.2003.11.061","article-title":"Irradiation Effects in Carbon Nanotubes","volume":"216","author":"Krasheninnikov","year":"2004","journal-title":"Nucl. Instrum. Methods Phys. Res., Sect. B"},{"issue":"7","key":"2026090715152827900_cit75","doi-asserted-by":"publisher","first-page":"071301","DOI":"10.1063\/1.3318261","article-title":"Ion and Electron Irradiation-Induced\nEffects in Nanostructured\nMaterials","volume":"107","author":"Krasheninnikov","year":"2010","journal-title":"J. Appl. Phys."},{"issue":"4","key":"2026090715152827900_cit76","doi-asserted-by":"publisher","first-page":"043501","DOI":"10.1063\/1.3194784","article-title":"Effects of Tube Diameter and Chirality on the Stability of Single-Walled\nCarbon Nanotubes under Ion Irradiation","volume":"106","author":"Xu","year":"2009","journal-title":"J. Appl.\nPhys."},{"key":"2026090715152827900_cit77","doi-asserted-by":"publisher","first-page":"1922","DOI":"10.1126\/science.275.5308.1922","article-title":"Single-Electron\nTransport in Ropes\nof Carbon Nanotubes","volume":"275","author":"Bockrath","year":"1997","journal-title":"Science"},{"key":"2026090715152827900_cit78","doi-asserted-by":"publisher","first-page":"495","DOI":"10.1038\/nature07110","article-title":"Medium-Scale\nCarbon Nanotube Thin-Film Integrated Circuits on Flexible Plastic\nSubstrates","volume":"454","author":"Cao","year":"2008","journal-title":"Nature"},{"issue":"9","key":"2026090715152827900_cit79","doi-asserted-by":"publisher","first-page":"192401","DOI":"10.1007\/s11432-023-3933-7","article-title":"Flexible Printed Three\nDimensional (3D) Integrated Carbon Nanotube Complementary Metal Oxide\nSemiconductor (CMOS) Thin Film Transistors and Circuits","volume":"67","author":"Chen","year":"2024","journal-title":"Sci. China Inf. Sci."},{"key":"2026090715152827900_cit80","first-page":"1","article-title":"Flexible Carbon Nanotube Optoelectronic Neuromorphic Devices and\nIrradiation-Resistance Logic Circuits with Low-Work-Function Gate\nElectrodes","volume-title":"2025 9th IEEE Electron Devices\nTechnology & Manufacturing Conference (EDTM), Hong Kong, Hong\nKong","author":"Deng","year":"2025"},{"key":"2026090715152827900_cit81","doi-asserted-by":"publisher","first-page":"4209","DOI":"10.1021\/nl9024243","article-title":"Y-Contacted High-Performance N-Type\nSingle-Walled Carbon Nanotube Field-Effect Transistors: Scaling and\nComparison with Sc-Contacted Devices","volume":"9","author":"Ding","year":"2009","journal-title":"Nano Lett."},{"key":"2026090715152827900_cit82","doi-asserted-by":"publisher","first-page":"35","DOI":"10.1021\/nl034841q","article-title":"Extraordinary Mobility\nin Semiconducting Carbon Nanotubes","volume":"4","author":"Du\u0308rkop","year":"2004","journal-title":"Nano Lett."},{"key":"2026090715152827900_cit83","doi-asserted-by":"publisher","first-page":"758","DOI":"10.1021\/nl203701g","article-title":"Sub-10 nm Carbon Nanotube\nTransistor","volume":"12","author":"Franklin","year":"2012","journal-title":"Nano Lett."},{"key":"2026090715152827900_cit84","doi-asserted-by":"publisher","first-page":"6852","DOI":"10.1039\/D1TC00357G","article-title":"Printed Solid-State\nElectrolyte Carbon\nNanotube Thin Film Transistors for Sub-1 V Fully Printed Flexible\nCMOS Inverters","volume":"9","author":"Gao","year":"2021","journal-title":"J. Mater. Chem. C"},{"issue":"7","key":"2026090715152827900_cit85","doi-asserted-by":"publisher","first-page":"2415442","DOI":"10.1002\/adma.202415442","article-title":"Performance Enhancement\nof Carbon Nanotube Network Transistors via SbI3 Inner-Doping\nin Selected Regions","volume":"37","author":"Guo","year":"2025","journal-title":"Adv. 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Rev.\nB"},{"issue":"1","key":"2026090715152827900_cit89","doi-asserted-by":"publisher","first-page":"1578","DOI":"10.1038\/s41467-021-21791-3","article-title":"Spin-State-Dependent Electrical Conductivity in Single-Walled\nCarbon Nanotubes Encapsulating Spin-Crossover Molecules","volume":"12","author":"Villalva","year":"2021","journal-title":"Nat. Commun."},{"key":"2026090715152827900_cit90","doi-asserted-by":"publisher","first-page":"2941","DOI":"10.1103\/PhysRevLett.84.2941","article-title":"High-Field\nElectrical Transport in\nSingle-Wall Carbon Nanotubes","volume":"84","author":"Yao","year":"2000","journal-title":"Phys. Rev. Lett."},{"issue":"14","key":"2026090715152827900_cit91","doi-asserted-by":"publisher","first-page":"146805","DOI":"10.1103\/PhysRevLett.95.146805","article-title":"Band Structure,\nPhonon Scattering, and the Performance Limit of Single-Walled Carbon\nNanotube Transistors","volume":"95","author":"Zhou","year":"2005","journal-title":"Phys. Rev. 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Sci."},{"issue":"5","key":"2026090715152827900_cit95","doi-asserted-by":"publisher","first-page":"2400011","DOI":"10.1002\/smsc.202400011","article-title":"Sorting of Carbon\nNanotubes Based on Dispersant Binding Affinities","volume":"4","author":"Hwang","year":"2024","journal-title":"Small Sci."},{"key":"2026090715152827900_cit96","doi-asserted-by":"publisher","first-page":"11316","DOI":"10.1039\/D5NR00365B","article-title":"Key Factor in Enhancing Yield and\nStability in Single-Chirality Carbon Nanotubes Extraction: Solvent\nViscosity","volume":"17","author":"Jin","year":"2025","journal-title":"Nanoscale"},{"key":"2026090715152827900_cit97","doi-asserted-by":"publisher","first-page":"102444","DOI":"10.1016\/j.vlsi.2025.102444","article-title":"Testing and Fault Tolerance\nTechniques for Carbon Nanotube-Based FPGAs","volume":"104","author":"Lu","year":"2025","journal-title":"Integration"},{"issue":"28","key":"2026090715152827900_cit98","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adx3958","article-title":"A Salt-Driven Mechanism\nfor Precise Chirality Sorting of Carbon Nanotubes","volume":"11","author":"Lyu","year":"2025","journal-title":"Sci. Adv."},{"key":"2026090715152827900_cit99","doi-asserted-by":"publisher","first-page":"118622","DOI":"10.1016\/j.mseb.2025.118622","article-title":"Carbon Nanotubes and Nanofibers as\nBuilding Blocks for the Future: Structure, Synthesis, Properties,\nand Functionalization Perspectives","volume":"322","author":"Meftahi","year":"2025","journal-title":"Mater. Sci.\nEng., B"},{"key":"2026090715152827900_cit100","doi-asserted-by":"publisher","first-page":"149","DOI":"10.1038\/s44287-023-00011-8","article-title":"Chirality Engineering\nfor Carbon Nanotube Electronics","volume":"1","author":"Tang","year":"2024","journal-title":"Nat. Rev. Electr.\nEng."},{"key":"2026090715152827900_cit101","doi-asserted-by":"publisher","first-page":"4504","DOI":"10.1039\/D4NA00437J","article-title":"Controlled Synthesis, Properties, and Applications\nof Ultralong Carbon Nanotubes","volume":"6","author":"Wang","year":"2024","journal-title":"Nanoscale Adv."},{"key":"2026090715152827900_cit102","doi-asserted-by":"publisher","first-page":"184015","DOI":"10.1016\/j.jallcom.2025.184015","article-title":"Growth Control\nand Functionalization\nDesign of Vertically Arranged Carbon Nanotubes: From Basic Research\nto Industrial Applications","volume":"1042","author":"Wu","year":"2025","journal-title":"J. Alloys Compd."},{"key":"2026090715152827900_cit103","doi-asserted-by":"publisher","first-page":"554","DOI":"10.3390\/mi16050554","article-title":"High-Performance\nCarbon\nNanotube Electronic Devices: Progress and Challenges","volume":"16","author":"Zhang","year":"2025","journal-title":"Micromachines"},{"issue":"6493","key":"2026090715152827900_cit104","doi-asserted-by":"publisher","first-page":"850","DOI":"10.1126\/science.aba5980","article-title":"Aligned, High-Density\nSemiconducting Carbon Nanotube Arrays for High-Performance Electronics","volume":"368","author":"Liu","year":"2020","journal-title":"Science"},{"key":"2026090715152827900_cit105","doi-asserted-by":"publisher","first-page":"3013","DOI":"10.1021\/nl071349o","article-title":"Toward\nthe Extraction of Single Species of Single-Walled Carbon Nanotubes\nUsing Fluorene-Based Polymers","volume":"7","author":"Chen","year":"2007","journal-title":"Nano Lett."},{"issue":"17","key":"2026090715152827900_cit106","doi-asserted-by":"publisher","first-page":"173101","DOI":"10.1063\/1.2108127","article-title":"Electrical Contacts to Carbon Nanotubes\nDown to 1nm in Diameter","volume":"87","author":"Kim","year":"2005","journal-title":"Appl. Phys. Lett."},{"issue":"13","key":"2026090715152827900_cit107","doi-asserted-by":"publisher","first-page":"133515","DOI":"10.1063\/1.2790805","article-title":"Field-Effect\nModulation of Contact Resistance between Carbon Nanotubes","volume":"91","author":"Kodama","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"2026090715152827900_cit108","doi-asserted-by":"crossref","first-page":"189","DOI":"10.1109\/NANO.2007.4601168","article-title":"Schottky Barrier Engineering in Carbon\nNanotube with Various Metal Electrodes","volume-title":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO), Hong Kong","author":"Perello","year":"2007"},{"issue":"23","key":"2026090715152827900_cit109","doi-asserted-by":"publisher","first-page":"230701","DOI":"10.1063\/5.0172970","article-title":"Advances in Separation\nof Monochiral Semiconducting Carbon Nanotubes\nand the Application in Electronics","volume":"134","author":"Sun","year":"2023","journal-title":"J. Appl.\nPhys."},{"key":"2026090715152827900_cit110","doi-asserted-by":"publisher","first-page":"9988","DOI":"10.1039\/C6NR00876C","article-title":"Metal Contact Effect\non the Performance\nand Scaling Behavior of Carbon Nanotube Thin Film Transistors","volume":"8","author":"Xia","year":"2016","journal-title":"Nanoscale"},{"key":"2026090715152827900_cit111","doi-asserted-by":"publisher","first-page":"4156","DOI":"10.1039\/c3nr34304a","article-title":"High Performance Thin Film Transistors Based on Regioregular Poly(3-dodecylthiophene)-Sorted\nLarge Diameter Semiconducting Single-Walled Carbon Nanotubes","volume":"5","author":"Wang","year":"2013","journal-title":"Nanoscale"},{"key":"2026090715152827900_cit112","doi-asserted-by":"publisher","first-page":"1589","DOI":"10.1039\/C3NR04870E","article-title":"Sorting of Large-Diameter Semiconducting Carbon Nanotube\nand Printed Flexible Driving Circuit for Organic Light Emitting Diode\n(OLED)","volume":"6","author":"Xu","year":"2014","journal-title":"Nanoscale"},{"key":"2026090715152827900_cit113","doi-asserted-by":"publisher","first-page":"18243","DOI":"10.1021\/jp4055022","article-title":"Electrical\nand Photoresponse\nProperties of Printed Thin-Film Transistors Based on Poly(9,9-dioctylfluorene-co-bithiophene)\nSorted Large-Diameter Semiconducting Carbon Nanotubes","volume":"117","author":"Qian","year":"2013","journal-title":"J. Phys. Chem. C"},{"key":"2026090715152827900_cit114","doi-asserted-by":"publisher","first-page":"903","DOI":"10.1016\/j.carbon.2015.07.072","article-title":"Sorting Semiconducting\nSingle Walled Carbon Nanotubes by Poly(9,9-Dioctylfluorene) Derivatives\nand Application for Ammonia Gas Sensing","volume":"94","author":"Zhang","year":"2015","journal-title":"Carbon"},{"issue":"44","key":"2026090715152827900_cit115","doi-asserted-by":"publisher","first-page":"1703938","DOI":"10.1002\/adfm.201703938","article-title":"Selective Dispersion\nof Large-Diameter Semiconducting\nCarbon Nanotubes by Functionalized Conjugated Dendritic Oligothiophenes\nfor Use in Printed Thin Film Transistors","volume":"27","author":"Gao","year":"2017","journal-title":"Adv.\nFunct. Mater."},{"key":"2026090715152827900_cit116","doi-asserted-by":"publisher","first-page":"10492","DOI":"10.1039\/c3cc46150e","article-title":"Designing Large-Plane\nConjugated Copolymers for the\nHigh-Yield Sorting of Semiconducting Single-Walled Carbon Nanotubes","volume":"49","author":"Li","year":"2013","journal-title":"Chem. Commun."},{"key":"2026090715152827900_cit117","doi-asserted-by":"publisher","first-page":"4588","DOI":"10.1039\/C6NR00015K","article-title":"Printed Thin\nFilm Transistors and CMOS Inverters Based on Semiconducting Carbon\nNanotube Ink Purified by a Nonlinear Conjugated Copolymer","volume":"8","author":"Xu","year":"2016","journal-title":"Nanoscale"},{"key":"2026090715152827900_cit118","doi-asserted-by":"publisher","first-page":"372","DOI":"10.1016\/j.carbon.2016.07.035","article-title":"Printed Thin-Film Transistors\nand NO2 Gas Sensors Based\non Sorted Semiconducting Carbon Nanotubes by Isoindigo-Based Copolymer","volume":"108","author":"Zhou","year":"2016","journal-title":"Carbon"},{"key":"2026090715152827900_cit119","unstructured":"Gao, W.\n          \n          Functionalizations\nof\n3D Conjugated Dendritic Oligothiophenes: Synthesis, Characterization\nand Application in Organic Electronics. Ph.D. Dissertation; University of Science and Technology of China: Suzhou, 2017."},{"key":"2026090715152827900_cit120","doi-asserted-by":"publisher","first-page":"120320","DOI":"10.1016\/j.carbon.2025.120320","article-title":"High-Performance\nField-Effect Transistors with Semiconducting-Rich Single-Walled Carbon\nNanotube Bundle","volume":"239","author":"Khan","year":"2025","journal-title":"Carbon"},{"issue":"17","key":"2026090715152827900_cit121","doi-asserted-by":"publisher","first-page":"5898","DOI":"10.3390\/ma15175898","article-title":"Synthesis,\nSorting, and Applications of Single-Chirality Single-Walled Carbon\nNanotubes","volume":"15","author":"Kharlamova","year":"2022","journal-title":"Materials"},{"key":"2026090715152827900_cit122","doi-asserted-by":"publisher","first-page":"14137","DOI":"10.1021\/acsnano.5c00025","article-title":"Precise Partitioning of Metallic\nSingle-Wall Carbon Nanotubes and Enantiomers through Aqueous Two-Phase\nExtraction","volume":"19","author":"Li","year":"2025","journal-title":"ACS Nano"},{"key":"2026090715152827900_cit123","doi-asserted-by":"publisher","first-page":"5571","DOI":"10.1021\/acsami.6b00074","article-title":"Understanding Charge\nTransport in Mixed Networks of\nSemiconducting Carbon Nanotubes","volume":"8","author":"Rother","year":"2016","journal-title":"ACS Appl. Mater.\nInterfaces"},{"issue":"1","key":"2026090715152827900_cit124","doi-asserted-by":"publisher","first-page":"1672","DOI":"10.1038\/s41467-023-37443-7","article-title":"Chirality-Dependent\nElectrical Transport Properties of Carbon Nanotubes Obtained by Experimental\nMeasurement","volume":"14","author":"Su","year":"2023","journal-title":"Nat. Commun."},{"key":"2026090715152827900_cit125","doi-asserted-by":"publisher","first-page":"1310","DOI":"10.1126\/science.adu1756","article-title":"Homochiral Carbon Nanotube Van Der Waals Crystals","volume":"387","author":"Zhang","year":"2025","journal-title":"Science"},{"key":"2026090715152827900_cit126","doi-asserted-by":"publisher","first-page":"5517","DOI":"10.1007\/s12274-022-4246-1","article-title":"Printed Thin Film Transistors\nwith 108 on\/off Ratios and Photoelectrical Synergistic\nCharacteristics Using Isoindigo-Based Polymers-Enriched (9,8) Carbon\nNanotubes","volume":"15","author":"Xu","year":"2022","journal-title":"Nano Res."},{"issue":"1","key":"2026090715152827900_cit127","doi-asserted-by":"publisher","first-page":"2107119","DOI":"10.1002\/adfm.202107119","article-title":"High-Purity\nMonochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance\nField-Effect Transistors","volume":"32","author":"Li","year":"2022","journal-title":"Adv. Funct. Mater."},{"key":"2026090715152827900_cit128","doi-asserted-by":"publisher","first-page":"12922","DOI":"10.1021\/acs.langmuir.5c00294","article-title":"Relationship between\nDensity Changes and Electrical Properties of Chemically Self-Assembled\nMonolayer Single-Walled Carbon Nanotube Networks by Controlling Anchoring\nDensity","volume":"41","author":"Bhalani","year":"2025","journal-title":"Langmuir"},{"issue":"36","key":"2026090715152827900_cit129","doi-asserted-by":"publisher","first-page":"32335","DOI":"10.1021\/acsnano.5c07890","article-title":"Evaluating Uniformity, Contact Geometries,\nand Size Scaling in Carbon Nanotube Thin-Film Transistors","volume":"19","author":"Doherty","year":"2025","journal-title":"ACS Nano"},{"key":"2026090715152827900_cit130","doi-asserted-by":"publisher","first-page":"1195","DOI":"10.1021\/nl062907m","article-title":"Experimental and\nTheoretical Studies of Transport through Large Scale, Partially Aligned\nArrays of Single-Walled Carbon Nanotubes in Thin Film Type Transistors","volume":"7","author":"Kocabas","year":"2007","journal-title":"Nano Lett."},{"key":"2026090715152827900_cit131","doi-asserted-by":"publisher","first-page":"2656","DOI":"10.1002\/adma.201405289","article-title":"Large-Area\nAssembly of Densely Aligned\nSingle-Walled Carbon Nanotubes Using Solution Shearing and Their Application\nto Field-Effect Transistors","volume":"27","author":"Park","year":"2015","journal-title":"Adv. Mater."},{"key":"2026090715152827900_cit132","doi-asserted-by":"publisher","first-page":"109174","DOI":"10.1016\/j.mssp.2024.109174","article-title":"Bundling Effect of Semiconductor-Enriched\nSingle-Walled Carbon Nanotube Networks on Field-Effect Transistor\nPerformance","volume":"187","author":"Seo","year":"2025","journal-title":"Mater. Sci. Semicond. Process."},{"key":"2026090715152827900_cit133","doi-asserted-by":"publisher","first-page":"164895","DOI":"10.1016\/j.apsusc.2025.164895","article-title":"Industrialization-Oriented\nPreparation of Networked Carbon Nanotube Films and Synergistic Optimization\nof \u201cLayer-Intercalated\u201d Transistors","volume":"718","author":"Wei","year":"2026","journal-title":"Appl. Surf. Sci."},{"key":"2026090715152827900_cit134","doi-asserted-by":"publisher","first-page":"9997","DOI":"10.1021\/am502168x","article-title":"Effect of Surface Wettability Properties on the Electrical Properties\nof Printed Carbon Nanotube Thin-Film Transistors on SiO2\/Si Substrates","volume":"6","author":"Liu","year":"2014","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"3","key":"2026090715152827900_cit135","doi-asserted-by":"publisher","first-page":"2001025","DOI":"10.1002\/aelm.202001025","article-title":"A Universal Method for High-Efficiency\nImmobilization of Semiconducting Carbon Nanotubes toward Fully Printed\nPaper-Based Electronics","volume":"7","author":"Li","year":"2021","journal-title":"Adv. Electron. Mater."},{"key":"2026090715152827900_cit136","doi-asserted-by":"publisher","first-page":"51797","DOI":"10.1021\/acsami.0c13824","article-title":"Large-Area Flexible Printed Thin-Film Transistors with Semiconducting\nSingle-Walled Carbon Nanotubes for NO2 Sensors","volume":"12","author":"Wang","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026090715152827900_cit137","doi-asserted-by":"publisher","first-page":"5317","DOI":"10.1039\/D2NR07209B","article-title":"Large Area Roll-to-Roll Printed Semiconducting\nCarbon Nanotube Thin Films for Flexible Carbon-Based Electronics","volume":"15","author":"Li","year":"2023","journal-title":"Nanoscale"},{"key":"2026090715152827900_cit138","doi-asserted-by":"publisher","first-page":"172","DOI":"10.1016\/j.carbon.2019.01.095","article-title":"Assembly of Aligned Semiconducting Carbon Nanotubes in Organic Solvents\nvia Introducing Inter-Tube Electrostatic Repulsion","volume":"146","author":"Gao","year":"2019","journal-title":"Carbon"},{"key":"2026090715152827900_cit139","doi-asserted-by":"publisher","first-page":"1568","DOI":"10.1007\/s12274-022-4782-8","article-title":"Length-Dependent Alignment of Large-Area\nSemiconducting Carbon Nanotubes\nSelf-Assembly on a Liquid-Liquid Interface","volume":"16","author":"Wen","year":"2023","journal-title":"Nano Res."},{"key":"2026090715152827900_cit140","doi-asserted-by":"publisher","first-page":"3179","DOI":"10.1021\/acsanm.3c05503","article-title":"Aligned Arrays\nof Semiconducting HiPCO SWCNTs Prepared\nby Liquid\u2013Liquid Interface Confinement Self-Assembly for Optic\u2013Electronic\nApplications","volume":"7","author":"Nan","year":"2024","journal-title":"ACS Appl. Nano Mater."},{"key":"2026090715152827900_cit141","unstructured":"Wang, X.; Zhao, J.; Li, X.; Shao, S.\n          Aligned Carbon Nanotube Array Structure,\nPreparation Method\nThereof, and Application Thereof. Chinese Patent CN 115,724,421\nB, 2024."},{"key":"2026090715152827900_cit142","unstructured":"Li, X.; Zhao, J.; Wang, X.; Shao, S.\n          High-Density Aligned Carbon Nanotube Film, Preparation Method\nThereof, and Application Thereof. Chinese Patent CN 115,709,986\nB, 2024."},{"key":"2026090715152827900_cit143","doi-asserted-by":"publisher","first-page":"614","DOI":"10.1039\/C7NR07334H","article-title":"Flexible Integrated Diode-Transistor\nLogic (DTL) Driving Circuits Based on Printed Carbon Nanotube Thin\nFilm Transistors with Low Operation Voltage\u2020","volume":"10","author":"Liu","year":"2018","journal-title":"Nanoscale"},{"key":"2026090715152827900_cit144","doi-asserted-by":"publisher","first-page":"14891","DOI":"10.1039\/C4NR05471G","article-title":"Flexible Logic Circuits\nBased on Top-Gate Thin Film Transistors with Printed Semiconductor\nCarbon Nanotubes and Top Electrodes\u2020","volume":"6","author":"Xu","year":"2014","journal-title":"Nanoscale"},{"key":"2026090715152827900_cit145","doi-asserted-by":"publisher","first-page":"5066","DOI":"10.1002\/smll.201600452","article-title":"Flexible CMOS-Like\nCircuits Based\non Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors","volume":"12","author":"Zhang","year":"2016","journal-title":"Small"},{"issue":"19","key":"2026090715152827900_cit146","doi-asserted-by":"publisher","first-page":"193302","DOI":"10.1063\/1.4921078","article-title":"Polymer-Sorted\n(6,5) Single-Walled Carbon Nanotubes for Solution-Processed Low-Voltage\nFlexible Microelectronics","volume":"106","author":"Bottacchi","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"2026090715152827900_cit147","doi-asserted-by":"publisher","first-page":"332","DOI":"10.3390\/electronics2040332","article-title":"Variability and Reliability of Single-Walled Carbon\nNanotube Field Effect Transistors","volume":"2","author":"Islam","year":"2013","journal-title":"Electronics"},{"issue":"19","key":"2026090715152827900_cit148","doi-asserted-by":"publisher","first-page":"2202454","DOI":"10.1002\/admi.202202454","article-title":"Investigating Charge\nTransport in Semiconducting Single-Walled\nCarbon Nanotube Networks by Charge Modulation Microscopy","volume":"10","author":"Jiang","year":"2023","journal-title":"Adv. Mater. Interfaces"},{"key":"2026090715152827900_cit149","doi-asserted-by":"publisher","first-page":"10020","DOI":"10.1021\/acs.jpcc.5b11346","article-title":"Competitive\nImpact of Nanotube Assembly and Contact Electrodes on the Performance\nof CNT-Based FETs","volume":"120","author":"Toader","year":"2016","journal-title":"J. Phys. Chem. C"},{"key":"2026090715152827900_cit150","doi-asserted-by":"publisher","first-page":"107209","DOI":"10.1016\/j.orgel.2025.107209","article-title":"Effect of Various\nParameters on Sorting Semiconducting\nCarbon Nanotubes Using Polyfluorene for High-Performance Field-Effect\nTransistors","volume":"139","author":"Yu","year":"2025","journal-title":"Org. Electron."},{"key":"2026090715152827900_cit151","doi-asserted-by":"publisher","first-page":"566","DOI":"10.1016\/j.carbon.2019.03.003","article-title":"Polarity Tuning\nof Carbon Nanotube Transistors by Chemical Doping for Printed Flexible\nComplementary Metal-Oxide Semiconductor (CMOS)-Like Inverters","volume":"147","author":"Xiao","year":"2019","journal-title":"Carbon"},{"key":"2026090715152827900_cit152","doi-asserted-by":"publisher","first-page":"025001","DOI":"10.1088\/2399-1984\/abf6b1","article-title":"Ambipolar Carbon Nanotube Transistors with Hybrid Nanodielectric\nfor Low-Voltage CMOS-Like Electronics","volume":"5","author":"Portilla","year":"2021","journal-title":"Nano\nFutures"},{"key":"2026090715152827900_cit153","doi-asserted-by":"publisher","first-page":"41531","DOI":"10.1021\/acsami.9b14916","article-title":"Overcoming\nElectrochemical Instabilities of Printed Silver Electrodes in All-Printed\nIon Gel Gated Carbon Nanotube Thin-Film Transistors","volume":"11","author":"Robin","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026090715152827900_cit154","doi-asserted-by":"publisher","first-page":"14036","DOI":"10.1021\/acsnano.0c06619","article-title":"Ambipolar Deep-Subthreshold\nPrinted-Carbon-Nanotube\nTransistors for Ultralow-Voltage and Ultralow-Power Electronics","volume":"14","author":"Portilla","year":"2020","journal-title":"ACS Nano"},{"key":"2026090715152827900_cit155","doi-asserted-by":"publisher","first-page":"12750","DOI":"10.1021\/acsami.7b01666","article-title":"Selective Conversion from P-Type to N-Type of Printed Bottom-Gate\nCarbon Nanotube Thin-Film Transistors and Application in Complementary\nMetal\u2013Oxide\u2013Semiconductor Inverters","volume":"9","author":"Xu","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026090715152827900_cit156","doi-asserted-by":"publisher","first-page":"145","DOI":"10.1016\/j.carbon.2020.03.012","article-title":"Air-Stable\nN-Type Printed Carbon Nanotube Thin Film Transistors for CMOS Logic\nCircuits","volume":"163","author":"Wei","year":"2020","journal-title":"Carbon"},{"key":"2026090715152827900_cit157","doi-asserted-by":"publisher","first-page":"118453","DOI":"10.1016\/j.carbon.2023.118453","article-title":"Matched Printed\nCarbon Nanotube Complementary Metal-Oxide-Semiconductor\n(CMOS) Devices for Flexible Circuits","volume":"215","author":"Guo","year":"2023","journal-title":"Carbon"},{"issue":"20","key":"2026090715152827900_cit158","doi-asserted-by":"publisher","first-page":"2207311","DOI":"10.1002\/smll.202207311","article-title":"Fully-Solution-Processed\nEnhancement-Mode Complementary Metal-Oxide-Semiconductor\nCarbon Nanotube Thin Film Transistors Based on BiI3-Doped\nCrosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible\nElectronics","volume":"19","author":"Li","year":"2023","journal-title":"Small"},{"key":"2026090715152827900_cit159","doi-asserted-by":"crossref","first-page":"19.2.1","DOI":"10.1109\/IEDM19573.2019.8993593","article-title":"Monolithic Heterogeneous Integration of BEOL\nPower Gating Transistors of Carbon Nanotube Networks with FEOL Si\nRing Oscillator Circuits","volume-title":"2019 IEEE International\nElectron Devices Meeting (IEDM), San Francisco, CA, USA","author":"Cheng","year":"2019"},{"key":"2026090715152827900_cit160","doi-asserted-by":"publisher","first-page":"622","DOI":"10.1038\/s41928-020-0465-1","article-title":"Radiation-Hardened\nand Repairable Integrated Circuits Based on Carbon Nanotube Transistors\nwith Ion Gel Gates","volume":"3","author":"Zhu","year":"2020","journal-title":"Nat. Electron."},{"key":"2026090715152827900_cit161","doi-asserted-by":"publisher","first-page":"449","DOI":"10.1109\/TNS.2023.3242644","article-title":"Total-Ionizing-Dose Effects and Low-Frequency\nNoise\nin N-Type Carbon Nanotube Field-Effect Transistors with HfO2 Gate Dielectrics","volume":"70","author":"Darmawi-Iskandar","year":"2023","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit162","doi-asserted-by":"publisher","first-page":"49963","DOI":"10.1021\/acsami.0c12539","article-title":"Radiation-Hard and\nRepairable Complementary Metal\u2013Oxide\u2013Semiconductor Circuits\nIntegrating N-Type Indium Oxide and P-Type Carbon Nanotube Field-Effect\nTransistors","volume":"12","author":"Luo","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"40","key":"2026090715152827900_cit163","doi-asserted-by":"publisher","first-page":"2204066","DOI":"10.1002\/adma.202204066","article-title":"Ultralow-Power and\nRadiation-Tolerant\nComplementary Metal-Oxide-Semiconductor Electronics Utilizing Enhancement-Mode\nCarbon Nanotube Transistors on Paper Substrates","volume":"34","author":"Wang","year":"2022","journal-title":"Adv. Mater."},{"key":"2026090715152827900_cit164","doi-asserted-by":"publisher","first-page":"7688","DOI":"10.1021\/acs.nanolett.4c01691","article-title":"Flexible Solid-Electrolyte-Gated-Dielectric\nCarbon\nNanotube Thin Film Transistors and Integrated Circuits with the Recorded\nRadiation Tolerance and Reparability","volume":"24","author":"Zhang","year":"2024","journal-title":"Nano Lett."},{"key":"2026090715152827900_cit165","doi-asserted-by":"publisher","first-page":"7797","DOI":"10.1021\/acs.nanolett.6c01953","article-title":"Flexible Carbon Nanotube\nComplementary\nMetal-Oxide-Semiconductor Integrated Circuits with Ultrastrong Radiation\nResistance","volume":"26","author":"Kang","year":"2026","journal-title":"Nano Lett."},{"key":"2026090715152827900_cit166","unstructured":"Li, J.\n          ,  Research on Carbon Nanotube\nThin-Film Transistors and Integration for Electronic Paper and Micro-LED\nDisplays. Ph.D. Dissertation; University\nof Science and Technology of China, Suzhou, 2026."},{"key":"2026090715152827900_cit167","doi-asserted-by":"publisher","first-page":"1186","DOI":"10.1109\/TNS.2024.3384767","article-title":"Bias and Temperature\nDependence of Radiation-Induced\nDegradation for SiC MOSFETs","volume":"71","author":"Peng","year":"2024","journal-title":"IEEE Trans. Nucl.\nSci."},{"key":"2026090715152827900_cit168","doi-asserted-by":"publisher","first-page":"3287","DOI":"10.1109\/TNS.2025.3603426","article-title":"Total Ionizing\nDose Effect of CNTFETs and SRAM Cells with Different Bias Conditions","volume":"72","author":"Ren","year":"2025","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"2026090715152827900_cit169","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-026-01632-1","article-title":"Flexible Radio-Frequency Carbon Nanotube Transistors\nOperating at\nFrequencies above 100 GHz","volume-title":"Nat. Electron.","author":"Xia","year":"2026"},{"key":"2026090715152827900_cit170","doi-asserted-by":"publisher","first-page":"949","DOI":"10.1038\/s41928-025-01463-6","article-title":"Terahertz\nMetal\u2013Oxide\u2013Semiconductor Transistors Based on Aligned\nCarbon Nanotube Arrays","volume":"8","author":"Zhou","year":"2025","journal-title":"Nat. Electron."},{"issue":"37","key":"2026090715152827900_cit171","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.abh0640","article-title":"Aligned\n2D Carbon Nanotube Liquid Crystals for Wafer-Scale Electronics","volume":"7","author":"Jinkins","year":"2021","journal-title":"Sci. Adv."}],"container-title":["ACS Nano"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsnano.6c08137","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/ancac3\/article-pdf\/20\/28\/19873\/65877444\/acsnano.6c08137.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/ancac3\/article-pdf\/20\/28\/19873\/65877444\/acsnano.6c08137.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,7]],"date-time":"2026-09-07T19:50:09Z","timestamp":1788810609000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/ancac3\/article\/20\/28\/19873\/5206664\/Trajectory-of-Radiation-Hardened-Electronics-From"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7,10]]},"references-count":171,"journal-issue":{"issue":"28","published-online":{"date-parts":[[2026,7,10]]},"published-print":{"date-parts":[[2026,7,21]]}},"URL":"https:\/\/doi.org\/10.1021\/acsnano.6c08137","relation":{},"ISSN":["1936-0851","1936-086X"],"issn-type":[{"value":"1936-0851","type":"print"},{"value":"1936-086X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7,10]]}}}