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Their significance lies not only in the miniaturization of GaN devices, but also in the way the one-dimensional geometry reshapes strain relaxation, defect propagation, carrier transport, surface interaction, heterostructure design and optical confinement. Major progress in GaN nanowire-based optoelectronics is systematically discussed here, spanning growth strategies to practical applications. Particular attention is given to both top-down and bottom-up fabrication approaches, with emphasis on how growth pathways determine nanowire morphology, crystal quality, interface characteristics and device integration. Recent advances in photodetectors, light-emitting diodes and lasers are summarized. In addition, expanding applications in artificial synapses, image recognition, brain-inspired computing, wearable systems and solar water splitting further demonstrate that GaN nanowires are evolving from single-function device elements into multifunctional material platforms. Finally, forward-looking insights are provided into the challenges and future development of GaN nanowires. For brain-inspired computing, the most meaningful progress will come from array-level demonstrations, circuit-compatible architectures, and task-oriented evaluation under realistic signal conditions. GaN nanowires should be viewed not simply as one-dimensional versions of planar GaN, but as structurally reconfigurable and interface-rich building blocks capable of connecting light detection, emission, memory, computation, mechanical sensing and chemical energy conversion.<\/jats:p>","DOI":"10.1021\/acsnano.6c08302","type":"journal-article","created":{"date-parts":[[2026,8,30]],"date-time":"2026-08-30T23:29:06Z","timestamp":1788132546000},"page":"24233-24270","source":"Crossref","is-referenced-by-count":0,"title":["Advances\nin GaN Nanowire-Based Optoelectronic Devices"],"prefix":"10.1021","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4071-4265","authenticated-orcid":true,"given":"Yukun","family":"Zhao","sequence":"first","affiliation":[{"name":"University of Science and Technology of China (USTC) , , ,","place":["Hefei, China, 230026"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) , , ,","place":["Suzhou, China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiyu","family":"Xu","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China (USTC) , , ,","place":["Hefei, China, 230026"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) , , ,","place":["Suzhou, China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dongliang","family":"Zhang","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China (USTC) , , ,","place":["Hefei, China, 230026"]},{"name":"Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) , , ,","place":["Suzhou, China, 215123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Youpeng","family":"Chen","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China (USTC) , , ,","place":["Hefei, China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8735-3156","authenticated-orcid":true,"given":"Chaoyun","family":"Song","sequence":"additional","affiliation":[{"name":"King\u2019s College London , , ,","place":["London, United Kingdom, WC2R 2LS"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yibin","family":"Wang","sequence":"additional","affiliation":[{"name":"Suzhou University of Science and Technology , , ,","place":["Suzhou, China, 215009"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jianya","family":"Zhang","sequence":"additional","affiliation":[{"name":"Suzhou University of Science and Technology , , ,","place":["Suzhou, China, 215009"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,24]]},"reference":[{"key":"2026090809102582500_cit1","doi-asserted-by":"publisher","DOI":"10.1038\/s41377-025-01751-y","article-title":"Advanced Technologies in InGaN Micro-LED\nFabrication to Mitigate the Sidewall Effect","volume":"14","author":"Liu","year":"2025","journal-title":"Light: Sci. 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