{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T19:46:47Z","timestamp":1792784807788,"version":"4.5.0"},"reference-count":54,"publisher":"American Chemical Society (ACS)","issue":"36","license":[{"start":{"date-parts":[[2026,8,30]],"date-time":"2026-08-30T00:00:00Z","timestamp":1788048000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"name":"Electric Power Research Institute of Seoul National University","id":[{"id":"https:\/\/ror.org\/04h9pn542","id-type":"ROR","asserted-by":"crossref"}]},{"name":"BK21 FOUR program of the Education and Research Program for Future ICT Pioneers"},{"name":"National Research Foundation of Korea","award":["RS-2023-00258309"],"award-info":[{"award-number":["RS-2023-00258309"]}],"id":[{"id":"https:\/\/ror.org\/013aysd81","id-type":"ROR","asserted-by":"crossref"}]},{"name":"National Research Foundation of Korea","award":["RS-2023-NR077272"],"award-info":[{"award-number":["RS-2023-NR077272"]}],"id":[{"id":"https:\/\/ror.org\/013aysd81","id-type":"ROR","asserted-by":"crossref"}]},{"name":"Seoul National University","id":[{"id":"https:\/\/ror.org\/04h9pn542","id-type":"ROR","asserted-by":"crossref"}]},{"name":"Samsung Electronics","award":["IO230413-05924-01"],"award-info":[{"award-number":["IO230413-05924-01"]}],"id":[{"id":"https:\/\/ror.org\/020m7t761","id-type":"ROR","asserted-by":"crossref"}]},{"name":"Samsung Electronics","award":["SRFC-MA2402-02"],"award-info":[{"award-number":["SRFC-MA2402-02"]}],"id":[{"id":"https:\/\/ror.org\/020m7t761","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,15]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional (2D) semiconductors, with their atomically thin geometry and excellent electrostatic control, are promising channel materials for ferroelectric field-effect transistors (FeFETs). However, integrating high-quality ferroelectric gate stacks onto these ultrathin channels in a manner compatible with modern semiconductor manufacturing, particularly under back-end-of-line (BEOL) constraints, remains a major challenge primarily due to interfacial instability. Here, we demonstrate interface-engineered top-gated 2D FeFETs based on monolayer molybdenum disulfide (MoS2) integrated with ferroelectric hafnium\u2013zirconium oxide (HZO) via atomic layer deposition. An ultrathin high-\u03ba yttrium oxide (Y2O3) interfacial layer serves as both a nucleation and protection layer, enabling conformal HZO growth while preserving a sharp van der Waals interface. All fabrication steps were conducted below 300 \u00b0C, fully satisfying BEOL thermal budgets. The resulting devices exhibit intrinsic polarization-driven switching rather than trap-dominant behavior. Notably, they achieve a nearly ideal memory window of 3.6 V, corresponding to \u223c90% of the theoretical maximum, under a low operating voltage of \u00b13.5 V, along with distinguishable nonvolatile switching characteristics. These results establish a CMOS and BEOL-compatible interface engineering strategy for integrating high-performance 2D FeFETs, providing a scalable pathway toward monolithic 3D systems for future embedded memory and logic-in-memory applications.<\/jats:p>","DOI":"10.1021\/acsnano.6c08339","type":"journal-article","created":{"date-parts":[[2026,9,2]],"date-time":"2026-09-02T19:07:12Z","timestamp":1788376032000},"page":"24857-24866","source":"Crossref","is-referenced-by-count":0,"title":["Interface-Engineered\nHafnia\u2013MoS2 Ferroelectric Field-Effect Transistors\nEnabling a Nearly Ideal Memory\nWindow with Back-End-of-Line Compatibility"],"prefix":"10.1021","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0009-0003-9476-2478","authenticated-orcid":true,"given":"Jaeho","family":"Lee","sequence":"first","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jihoon","family":"Jeon","sequence":"additional","affiliation":[{"name":"Korea University , , ,","place":["Seoul, Republic of Korea, 02841"]},{"name":"Korea Institute of Science and Technology , , ,","place":["Seoul, Republic of Korea, 02792"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jeonglyul","family":"Kim","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Beomjun","family":"Kim","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sihun","family":"Kim","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Donghui","family":"Kang","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junghoon","family":"Kang","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5260-5947","authenticated-orcid":true,"given":"Yeon Ho","family":"Kim","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jaehyung","family":"Shim","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tae Hyun","family":"Yoon","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sungmin","family":"Park","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jin Yong","family":"An","sequence":"additional","affiliation":[{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Korea University , , ,","place":["Seoul, Republic of Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyojun","family":"Choi","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bong Gi","family":"Lim","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8039-9482","authenticated-orcid":true,"given":"Hyobin","family":"Yoo","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8712-7167","authenticated-orcid":true,"given":"Seong Keun","family":"Kim","sequence":"additional","affiliation":[{"name":"Korea University , , ,","place":["Seoul, Republic of Korea, 02841"]},{"name":"Korea Institute of Science and Technology , , ,","place":["Seoul, Republic of Korea, 02792"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1570-8688","authenticated-orcid":true,"given":"Chul-Ho","family":"Lee","sequence":"additional","affiliation":[{"name":"Seoul National University , , ,","place":["Seoul, Republic of Korea, 08826"]},{"name":"Inter-University Semiconductor Research Center (ISRC), Seoul National University , ,","place":["Seoul, Republic of Korea, 08826"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,30]]},"reference":[{"key":"2026091510111730800_cit1","doi-asserted-by":"publisher","first-page":"501","DOI":"10.1038\/s41586-023-06145-x","article-title":"The Future Transistors","volume":"620","author":"Cao","year":"2023","journal-title":"Nature"},{"key":"2026091510111730800_cit2","doi-asserted-by":"publisher","first-page":"11994","DOI":"10.1021\/acsnano.3c03505","article-title":"Recent Advances and Future Prospects for Memristive\nMaterials, Devices and Systems","volume":"17","author":"Song","year":"2023","journal-title":"ACS Nano"},{"key":"2026091510111730800_cit3","doi-asserted-by":"publisher","first-page":"895","DOI":"10.1038\/s41565-024-01695-1","article-title":"The Future of Two-Dimensional Semiconductors\nbeyond Moore\u2019s Law","volume":"19","author":"Kim","year":"2024","journal-title":"Nat. Nanotechnol."},{"key":"2026091510111730800_cit4","doi-asserted-by":"publisher","first-page":"43","DOI":"10.1038\/s41586-021-03339-z","article-title":"Promises and Prospects\nof Two-Dimensional Transistors","volume":"591","author":"Liu","year":"2021","journal-title":"Nature"},{"key":"2026091510111730800_cit5","doi-asserted-by":"publisher","first-page":"1470","DOI":"10.1038\/s41563-023-01704-z","article-title":"Monolithic 3D Integration\nof 2D Materials-Based Electronics towards Ultimate Edge Computing\nSolutions","volume":"22","author":"Kang","year":"2023","journal-title":"Nat. Mater."},{"key":"2026091510111730800_cit6","doi-asserted-by":"publisher","first-page":"588","DOI":"10.1038\/s41928-020-00492-7","article-title":"The Future of Ferroelectric Field-Effect\nTransistor Technology","volume":"3","author":"Khan","year":"2020","journal-title":"Nat. Electron."},{"key":"2026091510111730800_cit7","doi-asserted-by":"publisher","first-page":"422","DOI":"10.1038\/s41565-023-01361-y","article-title":"Wurtzite and\nFluorite Ferroelectric Materials for Electronic Memory","volume":"18","author":"Kim","year":"2023","journal-title":"Nat. Nanotechnol."},{"key":"2026091510111730800_cit8","doi-asserted-by":"publisher","first-page":"1187","DOI":"10.1002\/nano.202000281","article-title":"Review of Ferroelectric\nField-Effect\nTransistors for Three-Dimensional Storage Applications","volume":"2","author":"Park","year":"2021","journal-title":"Nano Select"},{"key":"2026091510111730800_cit9","doi-asserted-by":"publisher","first-page":"502002","DOI":"10.1088\/1361-6528\/ac189f","article-title":"Ferroelectric Field-Effect Transistors Based on HfO2: A Review","volume":"32","author":"Mulaosmanovic","year":"2021","journal-title":"Nanotechnology"},{"key":"2026091510111730800_cit10","doi-asserted-by":"publisher","first-page":"478","DOI":"10.1038\/s41586-020-2208-x","article-title":"Enhanced Ferroelectricity in Ultrathin Films\nGrown Directly on Silicon","volume":"580","author":"Cheema","year":"2020","journal-title":"Nature"},{"key":"2026091510111730800_cit11","doi-asserted-by":"publisher","first-page":"65","DOI":"10.1038\/s41586-022-04425-6","article-title":"Ultrathin Ferroic HfO2-ZrO2 Superlattice\nGate Stack for Advanced Transistors","volume":"604","author":"Cheema","year":"2022","journal-title":"Nature"},{"key":"2026091510111730800_cit12","doi-asserted-by":"crossref","first-page":"19.7.1","DOI":"10.1109\/IEDM.2017.8268425","article-title":"A FeFET Based\nSuper-Low-Power Ultra-Fast Embedded NVM Technology for 22 nm FDSOI\nand beyond","volume-title":"2017 IEEE International Electron\nDevices Meeting (IEDM)","author":"Du\u0308nkel","year":"2017"},{"key":"2026091510111730800_cit13","doi-asserted-by":"publisher","first-page":"1044","DOI":"10.1038\/s41565-023-01399-y","article-title":"Scalable CMOS Back-End-of-Line-Compatible\nAlScN\/Two-Dimensional\nChannel Ferroelectric Field-Effect Transistors","volume":"18","author":"Kim","year":"2023","journal-title":"Nat. Nanotechnol."},{"key":"2026091510111730800_cit14","doi-asserted-by":"publisher","first-page":"3753","DOI":"10.1021\/acs.nanolett.0c05051","article-title":"Post-CMOS Compatible Aluminum Scandium\nNitride\/2D Channel Ferroelectric Field-Effect-Transistor Memory","volume":"21","author":"Liu","year":"2021","journal-title":"Nano Lett."},{"key":"2026091510111730800_cit15","first-page":"1","article-title":"A\nFully BEOL-Compatible (300 \u00b0C Annealing) IGZO FeFET with Ultra-High\nMemory Window (10 V) and Prominent Endurance (109)","volume-title":"2024 IEEE International Electron Devices Meeting (IEDM)","author":"Xu","year":"2024"},{"key":"2026091510111730800_cit16","doi-asserted-by":"publisher","first-page":"3176","DOI":"10.1109\/TED.2021.3072610","article-title":"Ferroelectric\nHafnium Zirconium Oxide Compatible with Back-End-of-Line Process","volume":"68","author":"Hur","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"key":"2026091510111730800_cit17","first-page":"1","article-title":"First Demonstration of Annealing-Free Top Gate La:HZO-IGZO\nFeFET\nwith Record Memory Window and Endurance","volume-title":"2023 IEEE International Electron Devices Meeting (IEDM)","author":"Zeng","year":"2023"},{"key":"2026091510111730800_cit18","doi-asserted-by":"publisher","first-page":"456","DOI":"10.1038\/s41565-023-01375-6","article-title":"Low-Thermal-Budget\nSynthesis of Monolayer\nMolybdenum Disulfide for Silicon Back-End-of-Line Integration on a\n200 mm Platform","volume":"18","author":"Zhu","year":"2023","journal-title":"Nat. Nanotechnol."},{"key":"2026091510111730800_cit19","doi-asserted-by":"publisher","first-page":"615","DOI":"10.1038\/s41586-024-08236-9","article-title":"Growth-Based Monolithic 3D Integration of Single-Crystal 2D Semiconductors","volume":"636","author":"Kim","year":"2024","journal-title":"Nature"},{"key":"2026091510111730800_cit20","doi-asserted-by":"publisher","first-page":"88","DOI":"10.1038\/s41586-022-05524-0","article-title":"Non-Epitaxial Single-Crystal\n2D Material Growth by\nGeometric Confinement","volume":"614","author":"Kim","year":"2023","journal-title":"Nature"},{"key":"2026091510111730800_cit21","doi-asserted-by":"publisher","first-page":"1439","DOI":"10.1038\/s41565-023-01460-w","article-title":"Low-Temperature\nGrowth of MoS2 on Polymer and Thin Glass Substrates for\nFlexible Electronics","volume":"18","author":"Hoang","year":"2023","journal-title":"Nat. Nanotechnol."},{"key":"2026091510111730800_cit22","doi-asserted-by":"publisher","first-page":"157","DOI":"10.1186\/s11671-020-03384-z","article-title":"Low Voltage\nOperating 2D MoS2 Ferroelectric Memory Transistor with\nHf1-xZrxO2 Gate Structure","volume":"15","author":"Zhang","year":"2020","journal-title":"Nanoscale Res. Lett."},{"key":"2026091510111730800_cit23","doi-asserted-by":"publisher","first-page":"72","DOI":"10.1109\/JEDS.2021.3133570","article-title":"Ultrathin MoS2-Channel FeFET Memory with\nEnhanced Ferroelectricity in HfZrO2 and Body-Potential\nControl","volume":"10","author":"Xiang","year":"2022","journal-title":"IEEE J. Electron Devices Soc."},{"key":"2026091510111730800_cit24","first-page":"1","article-title":"High-Endurance\nMoS2 FeFET\nwith Operating Voltage Less Than 1 V for eNVM in Scaled CMOS Technologies","volume-title":"2023 IEEE International Electron Devices Meeting (IEDM)","author":"Lee","year":"2023"},{"key":"2026091510111730800_cit25","doi-asserted-by":"publisher","first-page":"493","DOI":"10.1038\/s41565-023-01343-0","article-title":"An In-Memory Computing Architecture Based on a Duplex Two-Dimensional\nMaterial Structure for In Situ Machine Learning","volume":"18","author":"Ning","year":"2023","journal-title":"Nat. Nanotechnol."},{"key":"2026091510111730800_cit26","doi-asserted-by":"publisher","first-page":"770","DOI":"10.1038\/s41928-025-01448-5","article-title":"Gate Stack\nEngineering\nof Two-Dimensional Transistors","volume":"8","author":"Kim","year":"2025","journal-title":"Nat. Electron."},{"key":"2026091510111730800_cit27","doi-asserted-by":"publisher","first-page":"788","DOI":"10.1038\/s41586-024-07786-2","article-title":"Single-Crystalline Metal-Oxide Dielectrics\nfor Top-Gate 2D Transistors","volume":"632","author":"Zeng","year":"2024","journal-title":"Nature"},{"key":"2026091510111730800_cit28","doi-asserted-by":"publisher","first-page":"9469","DOI":"10.1038\/s41467-024-53907-w","article-title":"Single-Crystalline\nHigh-\u03ba GdOCl Dielectric for Two-Dimensional\nField-Effect Transistors","volume":"15","author":"Xu","year":"2024","journal-title":"Nat. Commun."},{"key":"2026091510111730800_cit29","doi-asserted-by":"publisher","first-page":"1078","DOI":"10.1038\/s41563-023-01626-w","article-title":"Scalable Integration of Hybrid High-\u03ba\nDielectric Materials on Two-Dimensional Semiconductors","volume":"22","author":"Xu","year":"2023","journal-title":"Nat. Mater."},{"key":"2026091510111730800_cit30","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/VLSITechnologyandCir46783.2024.10631360","article-title":"Achieving 1-nm-Scale Equivalent Oxide\nThickness Top-Gate Dielectric on Monolayer Transition Metal Dichalcogenide\nTransistors with CMOS-Friendly Approaches","volume-title":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology\nand Circuits)","author":"Ko","year":"2024"},{"key":"2026091510111730800_cit31","doi-asserted-by":"publisher","first-page":"2587","DOI":"10.1021\/acs.nanolett.4c01775","article-title":"Sub-Nanometer Equivalent Oxide Thickness\nand Threshold Voltage Control Enabled by Silicon Seed Layer on Monolayer\nMoS2 Transistors","volume":"25","author":"Ko","year":"2025","journal-title":"Nano Lett."},{"key":"2026091510111730800_cit32","doi-asserted-by":"publisher","first-page":"6255","DOI":"10.1002\/adma.201402008","article-title":"Interface\nEngineering for High-Performance\nTop-Gated MoS2 Field-Effect Transistors","volume":"26","author":"Zou","year":"2014","journal-title":"Adv. Mater."},{"key":"2026091510111730800_cit33","doi-asserted-by":"publisher","first-page":"2304657","DOI":"10.1002\/adfm.202304657","article-title":"Enhancing Memory\nWindow Efficiency of Ferroelectric Transistor for Neuromorphic Computing\nvia Two-Dimensional Materials Integration","volume":"33","author":"Xiang","year":"2023","journal-title":"Adv.\nFunct. Mater."},{"key":"2026091510111730800_cit34","doi-asserted-by":"publisher","first-page":"29","DOI":"10.1038\/s41699-024-00466-9","article-title":"Logic-in-Memory\nApplication of Ferroelectric-Based WS2-Channel Field-Effect\nTransistors for Improved Area and Energy Efficiency","volume":"8","author":"Kim","year":"2024","journal-title":"npj 2D Mater. Appl."},{"key":"2026091510111730800_cit35","doi-asserted-by":"publisher","first-page":"1600","DOI":"10.1109\/LED.2020.3019681","article-title":"Hf0.5Zr0.5O2 Ferroelectric\nEmbedded Dual-Gate MoS2 Field Effect Transistors for Memory\nMerged Logic Applications","volume":"41","author":"Huang","year":"2020","journal-title":"IEEE Electron Device\nLett."},{"key":"2026091510111730800_cit36","doi-asserted-by":"publisher","first-page":"4180","DOI":"10.1021\/acsnano.3c09279","article-title":"Tuning Polarity\nin WSe2\/AlScN FeFETs via Contact Engineering","volume":"18","author":"Kim","year":"2024","journal-title":"ACS\nNano"},{"key":"2026091510111730800_cit37","doi-asserted-by":"publisher","first-page":"21865","DOI":"10.1021\/acsnano.3c07952","article-title":"Reconfigurable Multifunctional van der Waals Ferroelectric\nDevices and Logic Circuits","volume":"17","author":"Ram","year":"2023","journal-title":"ACS Nano"},{"key":"2026091510111730800_cit38","doi-asserted-by":"publisher","first-page":"2923","DOI":"10.1002\/adma.201504779","article-title":"Ferroelectrically\nGated Atomically Thin Transition-Metal Dichalcogenides\nas Nonvolatile Memory","volume":"28","author":"Ko","year":"2016","journal-title":"Adv. Mater."},{"key":"2026091510111730800_cit39","doi-asserted-by":"publisher","first-page":"3111","DOI":"10.1002\/smll.201200752","article-title":"MoS2 Nanosheets\nfor Top-Gate Nonvolatile Memory Transistor Channel","volume":"8","author":"Lee","year":"2012","journal-title":"Small"},{"key":"2026091510111730800_cit40","doi-asserted-by":"publisher","first-page":"025036","DOI":"10.1088\/2053-1583\/aa5c17","article-title":"Ferroelectric FET for Nonvolatile Memory Application\nwith Two-Dimensional MoSe2 Channels","volume":"4","author":"Wang","year":"2017","journal-title":"2D Mater."},{"key":"2026091510111730800_cit41","doi-asserted-by":"publisher","first-page":"6700","DOI":"10.1021\/acsnano.8b01810","article-title":"Ferroelectric\nField-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure","volume":"12","author":"Si","year":"2018","journal-title":"ACS Nano"},{"key":"2026091510111730800_cit42","doi-asserted-by":"publisher","first-page":"8985","DOI":"10.1021\/acsnano.4c17301","article-title":"High Current\nand Carrier Densities in 2D MoS2\/AlScN Field-Effect Transistors\nvia Ferroelectric Gating and Ohmic Contacts","volume":"19","author":"Song","year":"2025","journal-title":"ACS Nano"},{"key":"2026091510111730800_cit43","doi-asserted-by":"publisher","first-page":"7655","DOI":"10.1038\/s41467-025-62827-2","article-title":"Reconfigurable\nSingle-Walled Carbon Nanotube Ferroelectric Field-Effect Transistors","volume":"16","author":"Rhee","year":"2025","journal-title":"Nat. Commun."},{"key":"2026091510111730800_cit44","doi-asserted-by":"publisher","first-page":"2686","DOI":"10.1038\/s41467-024-46878-5","article-title":"High-Performance\nFerroelectric Field-Effect\nTransistors with Ultra-Thin Indium Tin Oxide Channels for Flexible\nand Transparent Electronics","volume":"15","author":"Li","year":"2024","journal-title":"Nat. Commun."},{"key":"2026091510111730800_cit45","doi-asserted-by":"publisher","first-page":"4655","DOI":"10.1109\/TED.2024.3418942","article-title":"Understanding the Memory\nWindow of Ferroelectric FET and Demonstration of 4.8-V Memory Window\nwith 20-nm HfO2","volume":"71","author":"Qin","year":"2024","journal-title":"IEEE Trans. Electron\nDevices"},{"key":"2026091510111730800_cit46","doi-asserted-by":"crossref","first-page":"17.4.1","DOI":"10.1109\/IEDM19574.2021.9720652","article-title":"High-Performance BEOL-Compatible\nAtomic-Layer-Deposited In2O3 Fe-FETs Enabled\nby Channel Length Scaling down to 7 nm: Achieving Performance Enhancement\nwith Large Memory Window of 2.2 V, Long Retention &gt;10 Years and\nHigh\nEndurance &gt;10\u03028 Cycles","volume-title":"2021 IEEE\nInternational Electron Devices Meeting (IEDM)","author":"Lin","year":"2021"},{"key":"2026091510111730800_cit47","doi-asserted-by":"publisher","first-page":"3828","DOI":"10.1109\/TED.2019.2930749","article-title":"Ferroelectric\nFETs with 20-nm-Thick HfO2 Layer for Large Memory Window\nand High Performance","volume":"66","author":"Mulaosmanovic","year":"2019","journal-title":"IEEE Trans. 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