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Here, a van der Waals (vdW) step-barrier tunneling selector platform is reported, in which semiconductor\u2013insulator\u2013semiconductor energetics are engineered through transition-metal dichalcogenide\/h-BN heterostructures and contact selection. Across four heterojunction variants, the platform delivers nonlinearity exceeding 107, OFF-state current densities down to \u223c10\u20139 \u03bcA\/\u03bcm2, ON-state current densities approaching 1 \u03bcA\/\u03bcm2, and low operating voltages, together with weakly temperature-dependent ON-state transport from 80 to 300 K. Accelerated testing at 125 \u00b0C verifies endurance of at least 1011 cycles. Monolithic integration with resistive random-access memory yields a uniform 5 \u00d7 7 1S1R array, while circuit-level simulations show that 1S1R crossbars maintain a 94.8% read margin and &amp;gt;90% write margin even at the 256 \u00d7 256 scale, where selector-free arrays nearly fail. These results demonstrate the effectiveness of vdW step barriers as a selector platform for dense and energy-efficient cross-memory arrays.<\/jats:p>","DOI":"10.1021\/acsnano.6c09550","type":"journal-article","created":{"date-parts":[[2026,9,2]],"date-time":"2026-09-02T12:30:44Z","timestamp":1788352244000},"page":"24934-24945","source":"Crossref","is-referenced-by-count":0,"title":["Versatile van der\nWaals Step-Barrier Selectors for\nCross-Memory Arrays"],"prefix":"10.1021","volume":"20","author":[{"given":"Xiao","family":"Li","sequence":"first","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 100049"]},{"name":"Nanjing Tech University (NanjingTech) , , ,","place":["Nanjing, China, 211816"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yanming","family":"Zhang","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zijian","family":"Zhong","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sishuo","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"University of Hong Kong , , ,","place":["Hong Kong SAR, China, 999077"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jing","family":"Xue","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"Zhejiang University of Technology , , ,","place":["Hangzhou, China, 310014"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zilong","family":"Mao","sequence":"additional","affiliation":[{"name":"Nanjing Tech University (NanjingTech) , , ,","place":["Nanjing, China, 211816"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0445-3886","authenticated-orcid":true,"given":"Fanxin","family":"Liu","sequence":"additional","affiliation":[{"name":"Zhejiang University of Technology , , ,","place":["Hangzhou, China, 310014"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yue-Yang","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6237-0993","authenticated-orcid":true,"given":"Zhongming","family":"Wei","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3033-4792","authenticated-orcid":true,"given":"Lin","family":"Wang","sequence":"additional","affiliation":[{"name":"Nanjing Tech University (NanjingTech) , , ,","place":["Nanjing, China, 211816"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6575-1516","authenticated-orcid":true,"given":"Ping-Heng","family":"Tan","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8751-7082","authenticated-orcid":true,"given":"Jiang-Bin","family":"Wu","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences , , ,","place":["Beijing, China, 100083"]},{"name":"University of Chinese Academy of Sciences , , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,29]]},"reference":[{"key":"2026091510112496500_cit1","doi-asserted-by":"publisher","first-page":"1807075","DOI":"10.1002\/adma.201807075","article-title":"Two-Terminal Multibit Optical Memory\nvia van der Waals Heterostructure","volume":"31","author":"Tran","year":"2019","journal-title":"Adv. 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Mater."},{"key":"2026091510112496500_cit18","doi-asserted-by":"publisher","first-page":"642","DOI":"10.1109\/LED.2014.2314704","article-title":"High-Performance\na-IGZO\nThin Film Diode as Selector for Cross-Point Memory Application","volume":"35","author":"Chasin","year":"2014","journal-title":"IEEE Electron Device Lett."},{"key":"2026091510112496500_cit19","doi-asserted-by":"publisher","first-page":"356","DOI":"10.1002\/adma.201503604","article-title":"Trilayer Tunnel Selectors for Memristor\nMemory Cells","volume":"28","author":"Choi","year":"2016","journal-title":"Adv. Mater."},{"key":"2026091510112496500_cit20","doi-asserted-by":"publisher","first-page":"294","DOI":"10.1109\/JEDS.2016.2594190","article-title":"Overview of Selector Devices for 3-D Stackable Cross\nPoint RRAM Arrays","volume":"4","author":"Aluguri","year":"2016","journal-title":"IEEE J. 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Reliab."},{"key":"2026091510112496500_cit40","unstructured":"Wu, C.; Lee, C.; Chen, Y.; Lee, H.; Ambrosi, E.; Hsu, C.; Vaziri, S.; Chen, Y.; Nien, C. H.; Hwang, R.; Liao, P.; Hou, D.; Lee, Y.; Lee, T.; Chen, T.; Chang, M.; Wong, H.-S. P.; Bao, X.\n          Low-Voltage\n(1.3 V), Arsenic Free Threshold Type Selector with Ultra High Endurance\n(1011) for High Density 1S1R Memory Array. In  2021 Symposium on VLSI Technology, 2021; pp 1\u20132."},{"key":"2026091510112496500_cit41","doi-asserted-by":"crossref","unstructured":"Zhang, J.; Ma, X.; Xi, Y.; Lu, Y.; Wang, K.; Ren, H.; Tang, J.; Pan, L.; Chen, L.; Wu, D.; Gao, B.; Qian, H.; Wu, H.\n          A 28nm 4Mb Embedded RRAM IP with Record-High Endurance of 107 Cycles\nand 10 Years@125 \u00b0C Retention through Reliability-Enhanced Design-Technology\nCo-Optimization. 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Mater."},{"key":"2026091510112496500_cit45","doi-asserted-by":"publisher","first-page":"434","DOI":"10.1021\/acs.nanolett.7b04342","article-title":"Atomristor:\nNonvolatile Resistance Switching in Atomic Sheets of Transition Metal\nDichalcogenides","volume":"18","author":"Ge","year":"2018","journal-title":"Nano Lett."},{"key":"2026091510112496500_cit46","doi-asserted-by":"publisher","first-page":"1707","DOI":"10.1021\/nl3002205","article-title":"Electron Tunneling through Ultrathin\nBoron Nitride Crystalline Barriers","volume":"12","author":"Britnell","year":"2012","journal-title":"Nano Lett."},{"key":"2026091510112496500_cit47","doi-asserted-by":"publisher","first-page":"1000","DOI":"10.1038\/s41467-021-21138-y","article-title":"Semiconductor-Less\nVertical Transistor with ION\/IOFF of 106","volume":"12","author":"Lee","year":"2021","journal-title":"Nat. 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Beyond CMOS\nand Emerging Materials Integration; White Paper\/Roadmap, 2023."},{"key":"2026091510112496500_cit50","doi-asserted-by":"publisher","first-page":"2007081","DOI":"10.1002\/adma.202007081","article-title":"Emerging 2D\nMemory Devices for In-Memory Computing","volume":"33","author":"Yin","year":"2021","journal-title":"Adv.\nMater."},{"key":"2026091510112496500_cit51","doi-asserted-by":"publisher","first-page":"2200659","DOI":"10.1002\/adma.202200659","article-title":"Review\nof Semiconductor Flash Memory Devices for Material and Process Issues","volume":"35","author":"Kim","year":"2023","journal-title":"Adv. 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