{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,5]],"date-time":"2026-10-05T00:56:29Z","timestamp":1791161789707,"version":"4.1.0"},"reference-count":31,"publisher":"American Chemical Society (ACS)","issue":"34","license":[{"start":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T00:00:00Z","timestamp":1787011200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T00:00:00Z","timestamp":1787011200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T00:00:00Z","timestamp":1787011200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100005089","name":"Natural Science Foundation of Beijing Municipality","doi-asserted-by":"publisher","award":["F251001"],"award-info":[{"award-number":["F251001"]}],"id":[{"id":"10.13039\/501100005089","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2024YFE0202200"],"award-info":[{"award-number":["2024YFE0202200"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52372038"],"award-info":[{"award-number":["52372038"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["T2188101"],"award-info":[{"award-number":["T2188101"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional (2D) crystalline dielectrics are essential for high-performance van der Waals electronics in 2D electronics; however, their scalable synthesis with sufficient dielectric performance remains challenging. Here, we report the scalable chemical vapor deposition (CVD) growth of ultrathin single-crystalline CoO nanoplates with orientationally aligned arrays over millimeter-scale regions on mica substrates. Lattice matching enables aligned nucleation and epitaxial growth, yielding atomically flat flakes with excellent thermal stability. The crystalline CoO dielectric exhibits a dielectric constant of \u223c13.0, a breakdown field of 7.6 MV cm\u20131, and enables low-hysteresis graphene transistors. The presented method can be extended to the preparation of 2D Co3O4 flakes through thermal oxidation, as well as 2D Mn3O4 and Fe2O3 flakes via CVD-based chloride oxidation. This chloride-oxidation strategy is further extendable to other ultrathin transition-metal oxides and highlights 2D CoO as a promising crystalline dielectric platform for van der Waals electronics.<\/jats:p>","DOI":"10.1021\/acsnano.6c09588","type":"journal-article","created":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T19:02:01Z","timestamp":1787079721000},"page":"24029-24039","source":"Crossref","is-referenced-by-count":1,"title":["Controlled Chemical\nVapor Deposition Growth of Single-Crystalline\nCoO Ultrathin Flakes as Dielectrics for High-Performance Two-Dimensional\nElectronics"],"prefix":"10.1021","volume":"20","author":[{"given":"Muhammad","family":"Imran","sequence":"first","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yongxia","family":"Li","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Taiyuan University of Technology , , ,","place":["Taiyuan, P. R. China, 030002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Anchang","family":"Hu","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhuofeng","family":"Shi","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lingmiao","family":"Ma","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaohui","family":"Chen","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-6439-4886","authenticated-orcid":true,"given":"Zhenxin","family":"Zhao","sequence":"additional","affiliation":[{"name":"Taiyuan University of Technology , , ,","place":["Taiyuan, P. R. China, 030002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0065-7988","authenticated-orcid":true,"given":"Zhongfan","family":"Liu","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Beijing Graphene Institute , , ,","place":["Beijing, P. R. China, 100095"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junhao","family":"Liao","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Beijing Graphene Institute , , ,","place":["Beijing, P. R. China, 100095"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9746-3575","authenticated-orcid":true,"given":"Xiaomin","family":"Wang","sequence":"additional","affiliation":[{"name":"Taiyuan University of Technology , , ,","place":["Taiyuan, P. R. China, 030002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3626-0643","authenticated-orcid":true,"given":"Li","family":"Lin","sequence":"additional","affiliation":[{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Peking University , , ,","place":["Beijing, P. R. China, 100871"]},{"name":"Beijing Graphene Institute , , ,","place":["Beijing, P. R. China, 100095"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,18]]},"reference":[{"key":"2026090306591672000_cit1","doi-asserted-by":"publisher","first-page":"318","DOI":"10.1021\/acs.chemrev.3c00302","article-title":"2D Materials in Flexible Electronics: Recent Advances\nand Future Prospectives","volume":"124","author":"Katiyar","year":"2024","journal-title":"Chem. Rev."},{"key":"2026090306591672000_cit2","doi-asserted-by":"publisher","DOI":"10.1038\/natrevmats.2016.42","article-title":"Van der Waals Heterostructures\nand Devices","volume":"1","author":"Liu","year":"2016","journal-title":"Nat. Rev. Mater."},{"key":"2026090306591672000_cit3","doi-asserted-by":"publisher","first-page":"768","DOI":"10.1038\/nnano.2014.207","article-title":"Electronics Based on\nTwo-Dimensional Materials","volume":"9","author":"Fiori","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"2026090306591672000_cit4","doi-asserted-by":"publisher","DOI":"10.1038\/s41377-025-01995-8","article-title":"2D Materials-Based Next-Generation\nMultidimensional Photodetectors","volume":"14","author":"Han","year":"2025","journal-title":"Light Sci.\nAppl."},{"key":"2026090306591672000_cit5","doi-asserted-by":"publisher","first-page":"299","DOI":"10.1126\/science.adu3803","article-title":"Two-Dimensional\nIndium Selenide Wafers for Integrated Electronics","volume":"389","author":"Qin","year":"2025","journal-title":"Science"},{"key":"2026090306591672000_cit6","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-026-69089-6","article-title":"Van der Waals Dielectrics for Threshold\nEngineering in Two-Dimensional Field-Effect Transistors","volume":"17","author":"Sen","year":"2026","journal-title":"Nat. Commun."},{"key":"2026090306591672000_cit7","doi-asserted-by":"publisher","first-page":"832","DOI":"10.1038\/s41563-023-01502-7","article-title":"Single-Crystalline van der Waals Layered Dielectric\nwith High Dielectric Constant","volume":"22","author":"Zhang","year":"2023","journal-title":"Nat. Mater."},{"key":"2026090306591672000_cit8","doi-asserted-by":"publisher","first-page":"9733","DOI":"10.1021\/acsnano.5c18614","article-title":"SmOBr Quasi-van\nder Waals Dielectric with High-\u03ba and Ultralow Hysteresis for\nTwo-Dimensional Electronics","volume":"20","author":"Zeng","year":"2026","journal-title":"ACS Nano"},{"key":"2026090306591672000_cit9","doi-asserted-by":"publisher","first-page":"98","DOI":"10.1038\/s41928-020-00529-x","article-title":"The Performance\nLimits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS\nDevices Based on Two-Dimensional Materials","volume":"4","author":"Knobloch","year":"2021","journal-title":"Nat. Electron."},{"key":"2026090306591672000_cit10","doi-asserted-by":"publisher","first-page":"9722","DOI":"10.1021\/acsnano.5c18038","article-title":"A Layered\nWide-Bandgap BiOF Gate Dielectric with a High Dielectric Constant","volume":"20","author":"Chen","year":"2026","journal-title":"ACS Nano"},{"key":"2026090306591672000_cit11","doi-asserted-by":"publisher","first-page":"262","DOI":"10.1038\/s41586-022-04588-2","article-title":"High-\u03ba Perovskite Membranes as Insulators\nfor Two-Dimensional Transistors","volume":"605","author":"Huang","year":"2022","journal-title":"Nature"},{"key":"2026090306591672000_cit12","doi-asserted-by":"publisher","first-page":"3228","DOI":"10.1021\/acsnano.5c18189","article-title":"Contemporary\nChallenges in van der Waals 2D Semiconductors","volume":"20","author":"Kirubasankar","year":"2026","journal-title":"ACS Nano"},{"key":"2026090306591672000_cit13","doi-asserted-by":"publisher","first-page":"35438","DOI":"10.1021\/acsami.9b10940","article-title":"Atomic\nLayer Deposition of High-Quality Al2O3 Thin\nFilms on MoS2 with Water Plasma Treatment","volume":"11","author":"Huang","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026090306591672000_cit14","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/2\/1\/014004","article-title":"HfO2 on\nUV-O3 Exposed Transition-Metal Dichalcogenides: Interfacial\nReactions Study","volume":"2","author":"Azcatl","year":"2015","journal-title":"2D Mater."},{"key":"2026090306591672000_cit15","doi-asserted-by":"publisher","first-page":"788","DOI":"10.1038\/s41586-024-07786-2","article-title":"Single-Crystalline\nMetal-Oxide Dielectrics for Top-Gate 2D Transistors","volume":"632","author":"Zeng","year":"2024","journal-title":"Nature"},{"key":"2026090306591672000_cit16","doi-asserted-by":"publisher","first-page":"20837","DOI":"10.1021\/jacs.4c04984","article-title":"Epitaxial\nIntegration of Transferable High-\u03ba Dielectric and 2D Semiconductor","volume":"146","author":"Cong","year":"2024","journal-title":"J. Am. Chem. Soc."},{"key":"2026090306591672000_cit17","doi-asserted-by":"publisher","first-page":"614","DOI":"10.1126\/science.1244358","article-title":"One-Dimensional Electrical Contact\nto a Two-Dimensional Material","volume":"342","author":"Wang","year":"2013","journal-title":"Science"},{"key":"2026090306591672000_cit18","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-61972-y","article-title":"Controllable\nGrowth of MoO3 Dielectrics\nwith Sub-1 nm Equivalent Oxide Thickness for 2D Electronics","volume":"16","author":"Li","year":"2025","journal-title":"Nat. Commun."},{"key":"2026090306591672000_cit19","doi-asserted-by":"publisher","first-page":"560","DOI":"10.1038\/s41928-025-01398-y","article-title":"Integration\nof Freestanding Hafnium Zirconium Oxide Membranes into Two-Dimensional\nTransistors as a High-\u03ba Ferroelectric Dielectric","volume":"8","author":"Lin","year":"2025","journal-title":"Nat. Electron."},{"key":"2026090306591672000_cit20","doi-asserted-by":"publisher","first-page":"21989","DOI":"10.1021\/jp106818p","article-title":"Room Temperature Ferromagnetism\nin Vacuum-Annealed CoO Nanospheres","volume":"114","author":"Yang","year":"2010","journal-title":"J. Phys.\nChem. C"},{"key":"2026090306591672000_cit21","doi-asserted-by":"publisher","first-page":"2348","DOI":"10.1021\/cm0478475","article-title":"Synthesis and Magnetic Properties\nof CoO Nanoparticles","volume":"17","author":"Ghosh","year":"2005","journal-title":"Chem. Mater."},{"key":"2026090306591672000_cit22","doi-asserted-by":"publisher","first-page":"1509","DOI":"10.1021\/acsnano.4c14453","article-title":"Mineral-Mediated Epitaxial\nGrowth of CoO Nanoparticles for Efficient Electrochemical H2O2 Activation","volume":"19","author":"Zhao","year":"2025","journal-title":"ACS Nano"},{"key":"2026090306591672000_cit23","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-021-24557-z","article-title":"X-Ray Studies\nBridge the Molecular\nand Macro Length Scales During the Emergence of CoO Assemblies","volume":"12","author":"Grote","year":"2021","journal-title":"Nat. Commun."},{"key":"2026090306591672000_cit24","doi-asserted-by":"publisher","first-page":"42883","DOI":"10.1021\/acsomega.4c05308","article-title":"Synthesis\nand Local Characterization of CoO Nanoparticles in Distinct Phases:\nUnveiling Polymorphic Structures","volume":"9","author":"Santos","year":"2024","journal-title":"ACS Omega"},{"key":"2026090306591672000_cit25","doi-asserted-by":"publisher","first-page":"837","DOI":"10.1002\/jrs.5129","article-title":"Thermodynamic\nCoO\u2013Co3O4 Crossover Using Raman Spectroscopy\nin Magnetic Octahedron-Shaped\nNanocrystals","volume":"48","author":"Rivas-Murias","year":"2017","journal-title":"J. Raman Spectrosc."},{"key":"2026090306591672000_cit26","doi-asserted-by":"publisher","DOI":"10.3390\/coatings13111878","article-title":"Epitaxial\nGrowth of Cobalt Oxide Thin Films on Sapphire Substrates Using Atmospheric\nPressure Mist Chemical Vapor Deposition","volume":"13","author":"Chen","year":"2023","journal-title":"Coatings"},{"key":"2026090306591672000_cit27","doi-asserted-by":"publisher","first-page":"2995","DOI":"10.1021\/acs.jpcc.2c06353","article-title":"Thickness-Dependent\nRaman Scattering from Thin-Film Systems","volume":"127","author":"Van Velson","year":"2023","journal-title":"J.\nPhys. Chem. C"},{"key":"2026090306591672000_cit28","doi-asserted-by":"publisher","first-page":"10821","DOI":"10.1021\/acs.analchem.3c00272","article-title":"Analyzing\nFundamental Properties of Two-Dimensional Materials by Raman Spectroscopy\nfrom Microscale to Nanoscale","volume":"95","author":"Wu","year":"2023","journal-title":"Anal. Chem."},{"key":"2026090306591672000_cit29","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201604468","article-title":"Layer-Number Dependent\nOptical Properties of 2D Materials\nand Their Application for Thickness Determination","volume":"27","author":"Li","year":"2017","journal-title":"Adv. Funct. Mater."},{"key":"2026090306591672000_cit30","doi-asserted-by":"publisher","first-page":"873","DOI":"10.1002\/(SICI)1097-4555(199711)28:11&lt;873::AID-JRS177&gt;3.0.CO;2-B","article-title":"Raman Microspectroscopy\nof Some Iron Oxides and Oxyhydroxides","volume":"28","author":"de Faria","year":"1997","journal-title":"J. Raman\nSpectrosc."},{"key":"2026090306591672000_cit31","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-023-36619-5","article-title":"A General\nThermodynamics-Triggered\nCompetitive Growth Model to Guide the Synthesis of Two-Dimensional\nNonlayered Materials","volume":"14","author":"Zhao","year":"2023","journal-title":"Nat. Commun."}],"container-title":["ACS Nano"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsnano.6c09588","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/ancac3\/article-pdf\/20\/34\/24029\/66853960\/acsnano.6c09588.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/ancac3\/article-pdf\/20\/34\/24029\/66853960\/acsnano.6c09588.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T10:59:25Z","timestamp":1788433165000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/ancac3\/article\/20\/34\/24029\/5275723\/Controlled-Chemical-Vapor-Deposition-Growth-of"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,18]]},"references-count":31,"journal-issue":{"issue":"34","published-online":{"date-parts":[[2026,8,18]]},"published-print":{"date-parts":[[2026,9,1]]}},"URL":"https:\/\/doi.org\/10.1021\/acsnano.6c09588","relation":{},"ISSN":["1936-0851","1936-086X"],"issn-type":[{"value":"1936-0851","type":"print"},{"value":"1936-086X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,18]]}}}