{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,27]],"date-time":"2026-10-27T14:33:10Z","timestamp":1793111590121,"version":"4.5.0"},"reference-count":40,"publisher":"American Chemical Society (ACS)","issue":"42","license":[{"start":{"date-parts":[[2026,10,11]],"date-time":"2026-10-11T00:00:00Z","timestamp":1791676800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,11]],"date-time":"2026-10-11T00:00:00Z","timestamp":1791676800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,11]],"date-time":"2026-10-11T00:00:00Z","timestamp":1791676800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100003704","name":"Korea Research Institute of Chemical Technology","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003704","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Sungkyunkwan University","id":[{"id":"https:\/\/ror.org\/04q78tk20","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,27]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Ferroelectric field-effect transistors (FeFETs) utilizing either a ferroelectric dielectric (FeD) or a ferroelectric semiconductor (FeS) are highly promising for neuromorphic computing. While integrating FeD with emerging FeS could provide new degrees of freedom for synaptic plasticity, direct integration inevitably suffers from unintended electrostatic coupling and a lack of independent polarization control. Here, we demonstrate a structurally decoupled dual-ferroelectric field-effect transistor (Dual-FeFET) based on an \u03b1-In2Se3\/ZrO2\/HZO heterostructure, in which a ferroelectric dielectric and a ferroelectric semiconductor are integrated into a single transistor while retaining independent functional roles. The inserted ZrO2 interfacial layer mitigates unintended polarization coupling between HZO and \u03b1-In2Se3, enabling two orthogonal memory operations: gate-bias-induced HZO polarization switching globally modulates the carrier density of the \u03b1-In2Se3 channel, whereas drain-bias-induced \u03b1-In2Se3 polarization switching predominantly modulates the drain-side Schottky barrier near the contact region. Dual-mode PFM, Hall-bar analysis, temperature-dependent transport measurements, and ZrO2-thickness-dependent control experiments support the largely decoupled modulation of channel transport and contact injection. By sequentially exploiting these two modulation modes, the Dual-FeFET extends the conductance dynamic range and improves the linearity of synaptic potentiation compared with conventional single-mode FeFET operation. The device exhibits robust nonvolatile memory characteristics with stable endurance over 105 cycles and retention up to 105 s. When implemented in convolutional neural network simulations for CIFAR-10 image recognition, the Dual-FeFET-based synapses achieve an accuracy of 89.2%, approaching the ideal software accuracy of 96.5% and outperforming conventional single-FeFET-based synapses (74.1%). These results demonstrate that structural ferroelectric decoupling enables independently programmable channel and contact modulation in multifunctional 2D ferroelectric transistors.<\/jats:p>","DOI":"10.1021\/acsnano.6c13869","type":"journal-article","created":{"date-parts":[[2026,10,11]],"date-time":"2026-10-11T21:01:29Z","timestamp":1791752489000},"page":"28678-28692","source":"Crossref","is-referenced-by-count":0,"title":["Decoupled Channel\nand Contact Modulation in \u03b1-In2Se3\/ZrO2\/Hf0.5Zr0.5O2 Dual-Ferroelectric\nField-Effect Transistor"],"prefix":"10.1021","volume":"20","author":[{"given":"Jee Hwan","family":"Lee","sequence":"first","affiliation":[{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]},{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]},{"name":"Samsung Electronics , , ,","place":["Hwaseong, Republic of Korea, 18448"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jung Um","family":"Park","sequence":"additional","affiliation":[{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]},{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]},{"name":"Samsung Electronics , , ,","place":["Hwaseong, Republic of Korea, 18448"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Won Woo","family":"Lee","sequence":"additional","affiliation":[{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]},{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]},{"name":"Samsung Electronics , , ,","place":["Hwaseong, Republic of Korea, 18448"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Whan Kyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics , , ,","place":["Hwaseong, Republic of Korea, 18448"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Do Kyeong","family":"Yun","sequence":"additional","affiliation":[{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-6991-3591","authenticated-orcid":true,"given":"Minh Chien","family":"Nguyen","sequence":"additional","affiliation":[{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-5542-6206","authenticated-orcid":true,"given":"Yoon Seon","family":"An","sequence":"additional","affiliation":[{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7093-4835","authenticated-orcid":true,"given":"Huamin","family":"Li","sequence":"additional","affiliation":[{"name":"University at Buffalo, the State University of New York , , , ,","place":["Buffalo, New York, United States of America, 14260"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7399-307X","authenticated-orcid":true,"given":"Woo Jong","family":"Yu","sequence":"additional","affiliation":[{"name":"Sungkyunkwan University , , ,","place":["Suwon, Republic of Korea, 16419"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,11]]},"reference":[{"issue":"3","key":"2026102709130104400_cit1","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1038\/nnano.2010.279","article-title":"Single-layer MoS2 transistors","volume":"6","author":"Radisavljevic","year":"2011","journal-title":"Nat. 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Funct. Mater."},{"issue":"2","key":"2026102709130104400_cit5","doi-asserted-by":"publisher","first-page":"3362","DOI":"10.1021\/acsnano.2c00079","article-title":"Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors\nfor Multifunctional In-Memory Computing","volume":"16","author":"Luo","year":"2022","journal-title":"ACS\nNano"},{"issue":"46","key":"2026102709130104400_cit6","doi-asserted-by":"publisher","first-page":"14892","DOI":"10.1021\/acs.nanolett.4c05071","article-title":"Multimodal 2D ferroelectric transistor with integrated perception-and-computing-in-memory\nfunctions for reservoir computing","volume":"24","author":"Zhou","year":"2024","journal-title":"Nano Lett."},{"issue":"1","key":"2026102709130104400_cit7","doi-asserted-by":"publisher","first-page":"25","DOI":"10.1038\/s41578-022-00484-3","article-title":"Ferroelectric order\nin van der Waals layered materials","volume":"8","author":"Zhang","year":"2023","journal-title":"Nat. Rev.\nMater."},{"issue":"11","key":"2026102709130104400_cit8","doi-asserted-by":"publisher","first-page":"490","DOI":"10.1038\/s41928-019-0335-x","article-title":"Taking a RISC\non new materials with old concepts","volume":"2","author":"Lee","year":"2019","journal-title":"Nat. Electron."},{"issue":"21","key":"2026102709130104400_cit9","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202200566","article-title":"Ferroelectric\nField-Effect-Transistor Integrated with\nFerroelectrics Heterostructure","volume":"9","author":"Baek","year":"2022","journal-title":"Adv. Sci."},{"issue":"6","key":"2026102709130104400_cit10","doi-asserted-by":"publisher","first-page":"2000057","DOI":"10.1002\/aelm.202000057","article-title":"A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2\nand 2D Tungsten Disulfide","volume":"6","author":"Chen","year":"2020","journal-title":"Adv. Electron. Mater."},{"issue":"10","key":"2026102709130104400_cit11","doi-asserted-by":"publisher","first-page":"102903","DOI":"10.1063\/1.3634052","article-title":"Ferroelectricity\nin hafnium oxide thin films","volume":"99","author":"Bo\u0308scke","year":"2011","journal-title":"Appl. Phys. Lett."},{"issue":"10","key":"2026102709130104400_cit12","doi-asserted-by":"publisher","first-page":"588","DOI":"10.1038\/s41928-020-00492-7","article-title":"The future of ferroelectric field-effect\ntransistor technology","volume":"3","author":"Khan","year":"2020","journal-title":"Nat. Electron."},{"issue":"1","key":"2026102709130104400_cit13","doi-asserted-by":"publisher","first-page":"157","DOI":"10.1186\/s11671-020-03384-z","article-title":"Low Voltage\nOperating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2)\nGate Structure","volume":"15","author":"Zhang","year":"2020","journal-title":"Nanoscale Res. Lett."},{"key":"2026102709130104400_cit14","doi-asserted-by":"publisher","first-page":"14956","DOI":"10.1038\/ncomms14956","article-title":"Prediction\nof intrinsic two-dimensional\nferroelectrics in In(2)Se(3) and other III(2)-VI(3) van der Waals\nmaterials","volume":"8","author":"Ding","year":"2017","journal-title":"Nat. Commun."},{"issue":"9","key":"2026102709130104400_cit15","doi-asserted-by":"publisher","first-page":"5508","DOI":"10.1021\/acs.nanolett.7b02198","article-title":"Out-of-Plane Piezoelectricity and Ferroelectricity in Layered alpha-In(2)Se(3)\nNanoflakes","volume":"17","author":"Zhou","year":"2017","journal-title":"Nano Lett."},{"issue":"46","key":"2026102709130104400_cit16","doi-asserted-by":"publisher","first-page":"23488","DOI":"10.1039\/D0NR06872A","article-title":"Optical control of\nferroelectric switching and multifunctional devices\nbased on van der Waals ferroelectric semiconductors","volume":"12","author":"Xu","year":"2020","journal-title":"Nanoscale"},{"issue":"7","key":"2026102709130104400_cit17","doi-asserted-by":"publisher","first-page":"2000061","DOI":"10.1002\/aelm.202000061","article-title":"Orthogonal Electric Control of the Out-Of-Plane Field-Effect\nin 2D\nFerroelectric \u03b1-In2Se3","volume":"6","author":"Li","year":"2020","journal-title":"Adv. Electron.\nMater."},{"issue":"2","key":"2026102709130104400_cit18","doi-asserted-by":"publisher","first-page":"1253","DOI":"10.1021\/acs.nanolett.7b04852","article-title":"Intercorrelated In-Plane\nand Out-of-Plane Ferroelectricity\nin Ultrathin Two-Dimensional Layered Semiconductor In(2)Se(3)","volume":"18","author":"Cui","year":"2018","journal-title":"Nano Lett."},{"issue":"29","key":"2026102709130104400_cit19","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202303032","article-title":"Bottom Contact 100\nnm Channel-Length alpha-In(2) Se(3) In-Plane Ferroelectric Memory","volume":"10","author":"Miao","year":"2023","journal-title":"Adv. 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Mater."},{"issue":"7750","key":"2026102709130104400_cit24","doi-asserted-by":"publisher","first-page":"70","DOI":"10.1038\/s41586-019-1052-3","article-title":"Van der Waals\ncontacts between three-dimensional metals\nand two-dimensional semiconductors","volume":"568","author":"Wang","year":"2019","journal-title":"Nature"},{"issue":"9","key":"2026102709130104400_cit25","doi-asserted-by":"publisher","first-page":"3037","DOI":"10.1039\/C7CS00828G","article-title":"Contact engineering for 2D materials\nand devices","volume":"47","author":"Schulman","year":"2018","journal-title":"Chem. Soc. Rev."},{"issue":"18","key":"2026102709130104400_cit26","doi-asserted-by":"publisher","first-page":"183504","DOI":"10.1063\/5.0021395","article-title":"\u03b1-In2Se3 based ferroelectric-semiconductor\nmetal junction for non-volatile memories","volume":"117","author":"Saha","year":"2020","journal-title":"Appl.\nPhys. Lett."},{"key":"2026102709130104400_cit27","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202504842","article-title":"First Implementation\nof Edge-Contacted alpha-In(2)Se(3) Ferroelectric\nSemiconductor Field-Effect Transistors and their Application to Artificial\nHeterosynapse","author":"Kim","year":"2025","journal-title":"Small"},{"issue":"8","key":"2026102709130104400_cit28","doi-asserted-by":"publisher","first-page":"4781","DOI":"10.1021\/acs.nanolett.7b01536","article-title":"Low-Temperature Ohmic Contact to Monolayer MoS(2) by van der Waals\nBonded Co\/h-BN Electrodes","volume":"17","author":"Cui","year":"2017","journal-title":"Nano Lett."},{"issue":"7954","key":"2026102709130104400_cit29","doi-asserted-by":"publisher","first-page":"823","DOI":"10.1038\/s41586-023-05759-5","article-title":"Thousands\nof conductance levels in memristors integrated on CMOS","volume":"615","author":"Rao","year":"2023","journal-title":"Nature"},{"issue":"1","key":"2026102709130104400_cit30","doi-asserted-by":"publisher","first-page":"2649","DOI":"10.1038\/s41467-025-58005-z","article-title":"8-bit states in 2D floating-gate\nmemories using gate-injection mode\nfor large-scale convolutional neural networks","volume":"16","author":"Cai","year":"2025","journal-title":"Nat. Commun."},{"issue":"24","key":"2026102709130104400_cit31","doi-asserted-by":"publisher","first-page":"15466","DOI":"10.1021\/acsami.6b03586","article-title":"Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2\nFilms","volume":"8","author":"Park","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"24","key":"2026102709130104400_cit32","doi-asserted-by":"publisher","first-page":"242905","DOI":"10.1063\/1.4811483","article-title":"Evolution of phases and ferroelectric properties of\nthin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature","volume":"102","author":"Park","year":"2013","journal-title":"Appl. Phys. Lett."},{"issue":"3","key":"2026102709130104400_cit33","doi-asserted-by":"publisher","first-page":"3562","DOI":"10.1021\/acsnano.4c13595","article-title":"Atomic-Level Stoichiometry\nControl of Ferroelectric Hf(x)Zr(y)O(z) Thin Films by Understanding\nMolecular-Level Chemical Physical Reactions","volume":"19","author":"Trinh","year":"2025","journal-title":"ACS Nano"},{"issue":"1","key":"2026102709130104400_cit34","doi-asserted-by":"publisher","first-page":"11","DOI":"10.1021\/acsaelm.2c01513","article-title":"Phases in HfO2-Based Ferroelectric Thin Films and Their\nIntegration in Low-Power Devices","volume":"5","author":"Pujar","year":"2023","journal-title":"ACS Appl.\nElectron. Mater."},{"issue":"24","key":"2026102709130104400_cit35","doi-asserted-by":"publisher","first-page":"2314396","DOI":"10.1002\/adfm.202314396","article-title":"Atomic Layer Deposition of Epitaxial Ferroelectric\nHf0.5Zr0.5O2 Thin Films","volume":"34","author":"Cho","year":"2024","journal-title":"Adv. Funct. Mater."},{"issue":"1","key":"2026102709130104400_cit36","doi-asserted-by":"publisher","first-page":"1780","DOI":"10.1038\/s41467-023-37560-3","article-title":"Interface-engineered\nferroelectricity of epitaxial Hf(0.5)Zr(0.5)O(2) thin films","volume":"14","author":"Shi","year":"2023","journal-title":"Nat. Commun."},{"issue":"1","key":"2026102709130104400_cit37","doi-asserted-by":"publisher","first-page":"4789","DOI":"10.1038\/s41467-024-49055-w","article-title":"Ferroelectric\nfreestanding hafnia membranes with metastable rhombohedral structure\ndown to 1-nm-thick","volume":"15","author":"Shen","year":"2024","journal-title":"Nat. Commun."},{"key":"2026102709130104400_cit38","doi-asserted-by":"publisher","first-page":"342","DOI":"10.1109\/IEDM19573.2019.8993509","article-title":"First Direct\nMeasurement of Sub-Nanosecond\nPolarization Switching in Ferroelectric Hafnium Zirconium Oxide","volume-title":"2019 IEEE International Electron Devices Meeting (IEDM)","author":"Lyu","year":"2019"},{"issue":"12","key":"2026102709130104400_cit39","doi-asserted-by":"publisher","first-page":"580","DOI":"10.1038\/s41928-019-0338-7","article-title":"A ferroelectric semiconductor\nfield-effect transistor","volume":"2","author":"Si","year":"2019","journal-title":"Nat. Electron."},{"issue":"1","key":"2026102709130104400_cit40","doi-asserted-by":"publisher","first-page":"3070","DOI":"10.1038\/s41467-023-38667-3","article-title":"Multi-neuron\nconnection using multi-terminal floating\u2013gate memristor for\nunsupervised learning","volume":"14","author":"Won","year":"2023","journal-title":"Nat. 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