{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T22:20:21Z","timestamp":1788474021042,"version":"build-2803163510"},"reference-count":30,"publisher":"American Chemical Society (ACS)","issue":"25","license":[{"start":{"date-parts":[[2020,6,15]],"date-time":"2020-06-15T00:00:00Z","timestamp":1592179200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/pubs.acs.org\/page\/policy\/authorchoice_termsofuse.html"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["21A20130000018"],"award-info":[{"award-number":["21A20130000018"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,6,30]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Far ultraviolet C (UVC) light sources have the potential for numerous applications ranging from sterilization, purification, sensing, deodorization, surface modification, and so on. In particular, a short wavelength of far UVC is effective at sterilizing viruses and bacteria by minimizing damage to mammalian skin. Recently, many researchers are devoting materials and alternative light sources to overcome low efficiency, small light-emitting area, UV absorption, and complicated manufacturing processes of far UVC generation. Here, the sapphire wafer is evaluated for far UVC light generation using electron beam irradiation with carbon nanotube (CNT) emitters. A CNT-based cold cathode electron beam (C-beam) that emits electrons and accelerated onto \u03ba-Al2O3 of the sapphire wafer was used as an excitation source to demonstrate high-power far UVC light generation. High-efficiency 226 nm far UVC is made with a power conversion efficiency of 0.87% and a light-emitting area of 960 mm2. Far UVC generation depends on the input power and the crystallinity of sapphire wafers.<\/jats:p>","DOI":"10.1021\/acsomega.0c01824","type":"journal-article","created":{"date-parts":[[2020,6,15]],"date-time":"2020-06-15T17:21:28Z","timestamp":1592241688000},"page":"15601-15605","source":"Crossref","is-referenced-by-count":15,"title":["Sapphire Wafer for 226 nm Far UVC Generation with\nCarbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation"],"prefix":"10.1021","volume":"5","author":[{"given":"Sung Tae","family":"Yoo","sequence":"first","affiliation":[{"name":"Kyung Hee University , , Dongdaemun-gu, ,","place":["Seoul, Korea, 02447"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5426-3250","authenticated-orcid":true,"given":"Kyu Chang","family":"Park","sequence":"additional","affiliation":[{"name":"Kyung Hee University , , Dongdaemun-gu, ,","place":["Seoul, Korea, 02447"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2020,6,15]]},"reference":[{"key":"2026090317464636500_cit1","doi-asserted-by":"publisher","first-page":"2752","DOI":"10.1038\/s41598-018-21058-w","article-title":"Far-UVC\nLight: A New Tool to Control the Spread of Airborne-Mediated Microbial\nDiseases","volume":"8","author":"Welch","year":"2018","journal-title":"Sci. Rep."},{"key":"2026090317464636500_cit2","doi-asserted-by":"publisher","first-page":"493","DOI":"10.1667\/rr0010cc.1","article-title":"Germicidal Efficacy and Mammalian Skin Safety of 222-nm\nUV Light","volume":"187","author":"Buonanno","year":"2017","journal-title":"Radiat. Res."},{"key":"2026090317464636500_cit3","doi-asserted-by":"publisher","first-page":"233","DOI":"10.1038\/s41566-019-0359-9","article-title":"The Emergence and Prospects\nof Deep-Ultraviolet Light-Emitting Diode Technologies","volume":"13","author":"Kneissl","year":"2019","journal-title":"Nat. Photonics"},{"key":"2026090317464636500_cit4","doi-asserted-by":"publisher","first-page":"43","DOI":"10.1364\/aop.10.000043","article-title":"AlGaN Photonics: Recent\nAdvances in Materials and Ultraviolet Devices","volume":"10","author":"Li","year":"2018","journal-title":"Adv. Opt. Photonics"},{"key":"2026090317464636500_cit5","doi-asserted-by":"publisher","first-page":"1176","DOI":"10.1002\/pssa.200880961","article-title":"222-282 nm\nAlGaN and\nInAlGaN-Based Deep-UV LEDs Fabricated on High-Quality AlN on Sapphire","volume":"206","author":"Hirayama","year":"2009","journal-title":"Phys. Status Solidi A"},{"key":"2026090317464636500_cit6","doi-asserted-by":"publisher","first-page":"082101","DOI":"10.1143\/apex.5.082101","article-title":"AlGaN Deep-Ultraviolet Light-Emitting Diodes with External\nQuantum Efficiency above 10%","volume":"5","author":"Shatalov","year":"2012","journal-title":"Appl. Phys. Express"},{"key":"2026090317464636500_cit7","doi-asserted-by":"publisher","first-page":"031002","DOI":"10.7567\/apex.10.031002","article-title":"Deep-Ultraviolet Light-Emitting Diodes with External\nQuantum Efficiency Higher than 20% at 275 nm Achieved by Improving\nLight-Extraction Efficiency","volume":"10","author":"Takano","year":"2017","journal-title":"Appl. Phys. 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Lett."},{"key":"2026090317464636500_cit10","doi-asserted-by":"publisher","first-page":"031002","DOI":"10.1143\/apex.3.031002","article-title":"Marked Enhancement\nin the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes\nby Using a Multiquantum-Barrier Electron Blocking Layer","volume":"3","author":"Hirayama","year":"2010","journal-title":"Appl. Phys. Express"},{"key":"2026090317464636500_cit11","doi-asserted-by":"publisher","first-page":"014036","DOI":"10.1088\/0268-1242\/26\/1\/014036","article-title":"Advances in Group III-Nitride-Based\nDeep UV Light-Emitting Diode Technology","volume":"26","author":"Kneissl","year":"2010","journal-title":"Semicond.\nSci. Technol."},{"key":"2026090317464636500_cit12","doi-asserted-by":"publisher","first-page":"141106","DOI":"10.1063\/1.4978855","article-title":"150 mW deep-ultraviolet\nlight-emitting\ndiodes with large-area AlN nanophotonic light-extraction structure\nemitting at 265 nm","volume":"110","author":"Inoue","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"2026090317464636500_cit13","doi-asserted-by":"publisher","first-page":"011111","DOI":"10.1063\/1.5038044","article-title":"226 nm AlGaN\/AlN UV LEDs using p-type Si for\nhole injection and UV reflection","volume":"113","author":"Liu","year":"2018","journal-title":"Appl. Phys.\nLett."},{"key":"2026090317464636500_cit14","doi-asserted-by":"publisher","first-page":"092103","DOI":"10.7567\/apex.6.092103","article-title":"Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes\nFabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy","volume":"6","author":"Kinoshita","year":"2013","journal-title":"Appl. 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Microelectron.: Mater.,\nProcess., Meas., Phenom."}],"container-title":["ACS Omega"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsomega.0c01824","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/5\/25\/15601\/68306273\/acsomega.0c01824.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/5\/25\/15601\/68306273\/acsomega.0c01824.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T21:46:51Z","timestamp":1788472011000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/acsodf\/article\/5\/25\/15601\/975264\/Sapphire-Wafer-for-226-nm-Far-UVC-Generation-with"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,6,15]]},"references-count":30,"journal-issue":{"issue":"25","published-online":{"date-parts":[[2020,6,15]]},"published-print":{"date-parts":[[2020,6,30]]}},"URL":"https:\/\/doi.org\/10.1021\/acsomega.0c01824","relation":{},"ISSN":["2470-1343"],"issn-type":[{"value":"2470-1343","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,6,15]]}}}