{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,17]],"date-time":"2026-08-17T15:25:28Z","timestamp":1786980328634,"version":"build-2736575974"},"reference-count":59,"publisher":"American Chemical Society (ACS)","issue":"7","license":[{"start":{"date-parts":[[2022,2,8]],"date-time":"2022-02-08T00:00:00Z","timestamp":1644278400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001602","name":"Science Foundation Ireland","doi-asserted-by":"publisher","award":["US-Ireland joint R&D program"],"award-info":[{"award-number":["US-Ireland joint R&D program"]}],"id":[{"id":"10.13039\/501100001602","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000148","name":"Division of Electrical, Communications and Cyber Systems","doi-asserted-by":"publisher","award":["ECCS-1507950"],"award-info":[{"award-number":["ECCS-1507950"]}],"id":[{"id":"10.13039\/100000148","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000148","name":"Division of Electrical, Communications and Cyber Systems","doi-asserted-by":"publisher","award":["ECCS-2042079"],"award-info":[{"award-number":["ECCS-2042079"]}],"id":[{"id":"10.13039\/100000148","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,2,22]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>The indirect nature of silicon (Si) emission currently limits the monolithic integration of photonic circuitry with Si electronics. Approaches to circumvent the optical shortcomings of Si include band structure engineering via alloying (e.g., SixGe1\u2013x\u2013ySny) and\/or strain engineering of group IV materials (e.g., Ge). Although these methods enhance emission, many are incapable of realizing practical lasing structures because of poor optical and electrical confinement. Here, we report on strong optoelectronic confinement in a highly tensile-strained (\u03b5) Ge\/In0.26Al0.74As heterostructure as determined by X-ray photoemission spectroscopy (XPS). To this end, an ultrathin (\u223c10 nm) \u03b5-Ge epilayer was directly integrated onto the In0.26Al0.74As stressor using an in situ, dual-chamber molecular beam epitaxy approach. Combining high-resolution X-ray diffraction and Raman spectroscopy, a strain state as high as \u03b5 \u223c 1.75% was demonstrated. Moreover, high-resolution transmission electron microscopy confirmed the highly ordered, pseudomorphic nature of the as-grown \u03b5-Ge\/In0.26Al0.74As heterostructure. The heterointerfacial electronic structure was likewise probed via XPS, revealing conduction- and valence band offsets (\u0394EC and \u0394EV) of 1.25 \u00b1 0.1 and 0.56 \u00b1 0.1 eV, respectively. Finally, we compare our empirical results with previously published first-principles calculations investigating the impact of heterointerfacial stoichiometry on the \u03b5-Ge\/InxAl1\u2013xAs energy band offset, demonstrating excellent agreement between experimental and theoretical results under an As0.5Ge0.5 interface stoichiometry exhibiting up to two monolayers of heterointerfacial As\u2013Ge diffusion. Taken together, these findings reveal a new route toward the realization of on-Si photonics.<\/jats:p>","DOI":"10.1021\/acsomega.1c06203","type":"journal-article","created":{"date-parts":[[2022,2,8]],"date-time":"2022-02-08T13:13:32Z","timestamp":1644326012000},"page":"5946-5953","source":"Crossref","is-referenced-by-count":8,"title":["Mapping the Interfacial Electronic\nStructure of Strain-Engineered Epitaxial Germanium Grown on In\n                    <i>x<\/i>\n                    Al1\u2013\n                    <i>x<\/i>\n                    As\nStressors"],"prefix":"10.1021","volume":"7","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2925-6099","authenticated-orcid":true,"given":"Michael B.","family":"Clavel","sequence":"first","affiliation":[{"name":"Virginia Tech , , , ,","place":["Blacksburg, Virginia, United States, 24061"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jheng-Sin","family":"Liu","sequence":"additional","affiliation":[{"name":"Virginia Tech , , , ,","place":["Blacksburg, Virginia, United States, 24061"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Robert J.","family":"Bodnar","sequence":"additional","affiliation":[{"name":"Virginia Tech , , , ,","place":["Blacksburg, Virginia, United States, 24061"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9789-3081","authenticated-orcid":true,"given":"Mantu K.","family":"Hudait","sequence":"additional","affiliation":[{"name":"Virginia Tech , , , ,","place":["Blacksburg, Virginia, United States, 24061"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2022,2,8]]},"reference":[{"key":"2026081710210419200_cit1","first-page":"155","article-title":"Physical\nReasons for Optical Interconnection","volume":"11","author":"Miller","year":"1997","journal-title":"Int. J.\nOptoelectronics"},{"key":"2026081710210419200_cit2","doi-asserted-by":"publisher","first-page":"1166","DOI":"10.1109\/JPROC.2009.2014298","article-title":"Device\nRequirements for Optical Interconnects to Silicon Chips","volume":"97","author":"Miller","year":"2009","journal-title":"Proc. IEEE"},{"key":"2026081710210419200_cit3","first-page":"73","article-title":"Optical Technologies\nfor Enterprise Networks","volume":"8","author":"Herve","year":"2004","journal-title":"Intel Technol. J."},{"key":"2026081710210419200_cit4","doi-asserted-by":"publisher","first-page":"1678","DOI":"10.1109\/JSTQE.2006.883151","article-title":"The Past, Present, and Future of\nSilicon Photonics","volume":"12","author":"Soref","year":"2006","journal-title":"IEEE J. Sel. Top. Quantum\nElectron."},{"key":"2026081710210419200_cit5","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1007\/s12633-010-9034-y","article-title":"Silicon Photonics: A Review of Recent Literature","volume":"2","author":"Soref","year":"2010","journal-title":"Silicon"},{"key":"2026081710210419200_cit6","doi-asserted-by":"publisher","first-page":"511","DOI":"10.1038\/nphoton.2010.167","article-title":"Recent Progress\nin Lasers on Silicon","volume":"4","author":"Liang","year":"2010","journal-title":"Nat. Photonics"},{"key":"2026081710210419200_cit7","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1038\/lsa.2015.131","article-title":"On-Chip Light Sources for Silicon Photonics","volume":"4","author":"Zhou","year":"2015","journal-title":"Light: Sci. Appl."},{"key":"2026081710210419200_cit8","doi-asserted-by":"publisher","first-page":"338","DOI":"10.1038\/384338a0","article-title":"Silicon-based Visible\nLight Emitting Devices Integrated into Microelectronic Circuits","volume":"384","author":"Hirschman","year":"1996","journal-title":"Nature"},{"key":"2026081710210419200_cit9","doi-asserted-by":"publisher","first-page":"1","DOI":"10.3389\/fmats.2015.00052","article-title":"Group IV Direct Band\nGap Photonics: Methods, Challenges, and Opportunities","volume":"2","author":"Geiger","year":"2015","journal-title":"Front. Mater."},{"key":"2026081710210419200_cit10","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1364\/PRJ.1.000069","article-title":"Germanium Tin: Silicon Photonics Toward the Mid-Infrared","volume":"1","author":"Kasper","year":"2013","journal-title":"Photonics Res."},{"key":"2026081710210419200_cit11","doi-asserted-by":"publisher","first-page":"162","DOI":"10.3390\/photonics1030162","article-title":"Monolithically Integrated Ge-on-Si\nActive Photonics","volume":"1","author":"Liu","year":"2014","journal-title":"Photonics"},{"key":"2026081710210419200_cit12","doi-asserted-by":"publisher","first-page":"2002","DOI":"10.1109\/JPHOT.2012.2221692","article-title":"Roadmap to an Efficient\nGermanium-on-Silicon Laser: Strain versus N-type Doping","volume":"4","author":"Dutt","year":"2012","journal-title":"IEEE Photonics J."},{"key":"2026081710210419200_cit13","doi-asserted-by":"publisher","first-page":"065015-1","DOI":"10.1088\/0268-1242\/31\/6\/065015","article-title":"Design Considerations of Biaxially\nTensile Strained Germanium-on-Silicon Lasers","volume":"31","author":"Li","year":"2016","journal-title":"Semicond. Sci. Technol."},{"key":"2026081710210419200_cit14","doi-asserted-by":"publisher","first-page":"11272","DOI":"10.1364\/OE.15.011272","article-title":"Tensile-Strained,\nN-type Ge as a Gain Medium for Monolithic Laser Integration on Si","volume":"15","author":"Liu","year":"2007","journal-title":"Opt. Express"},{"key":"2026081710210419200_cit15","doi-asserted-by":"publisher","first-page":"28","DOI":"10.1364\/OPN.21.5.000028","article-title":"Hybrid Silicon Lasers:\nThe Final Frontier to Integrated Computing","volume":"21","author":"Bowers","year":"2010","journal-title":"Opt. Photonics News"},{"key":"2026081710210419200_cit16","doi-asserted-by":"publisher","first-page":"79420O","DOI":"10.1117\/12.878607","article-title":"InP on SOI Devices for Optical Communication and Optical\nNetwork on Chip","volume":"7942","author":"Fedeli","year":"2011","journal-title":"Proc. SPIE"},{"key":"2026081710210419200_cit17","doi-asserted-by":"crossref","first-page":"90020X","DOI":"10.1117\/12.2044258","article-title":"Hybrid III-V on\nSilicon Lasers for Photonic Integrated Circuits on Silicon","volume":"9002","author":"Duan","year":"2014","journal-title":"Proc. SPIE"},{"key":"2026081710210419200_cit18","doi-asserted-by":"publisher","first-page":"1901009","DOI":"10.1109\/JSTQE.2013.2247573","article-title":"Analysis of\nThreshold Current Behavior for Bulk and Quantum Well Germanium Laser\nStructures","volume":"19","author":"Cai","year":"2013","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"2026081710210419200_cit19","doi-asserted-by":"publisher","first-page":"18893","DOI":"10.1073\/pnas.1107968108","article-title":"Direct-Bandgap Light-Emitting Germanium in Tensilely\nStrained Nanomembranes","volume":"108","author":"Sanchez-Perez","year":"2011","journal-title":"Proc. Natl. Acad. Sci.\nU. S. A."},{"key":"2026081710210419200_cit20","doi-asserted-by":"publisher","first-page":"398","DOI":"10.1038\/nphoton.2012.111","article-title":"A Micromachining-based\nTechnology for Enhancing Germanium Light Emission via Tensile Strain","volume":"6","author":"Jain","year":"2012","journal-title":"Nat. Photonics"},{"key":"2026081710210419200_cit21","doi-asserted-by":"publisher","first-page":"091103-1","DOI":"10.1063\/1.4942891","article-title":"Tensile-Strained Germanium\nMicrodisks with Circular Bragg Reflectors","volume":"108","author":"El Kurdi","year":"2016","journal-title":"Appl.\nPhys. Lett."},{"key":"2026081710210419200_cit22","doi-asserted-by":"publisher","first-page":"679","DOI":"10.1364\/OL.35.000679","article-title":"Ge-on-Si Laser Operating at Room Temperature","volume":"35","author":"Liu","year":"2010","journal-title":"Opt. Lett."},{"key":"2026081710210419200_cit23","doi-asserted-by":"publisher","first-page":"11316","DOI":"10.1364\/OE.20.011316","article-title":"An Electrically Pumped Germanium Laser","volume":"20","author":"Camacho-Aguilera","year":"2012","journal-title":"Opt. Express"},{"key":"2026081710210419200_cit24","doi-asserted-by":"publisher","first-page":"88","DOI":"10.1038\/nphoton.2014.321","article-title":"Lasing in\nDirect-Bandgap GeSn Alloy Grown on Si","volume":"9","author":"Wirths","year":"2015","journal-title":"Nat.\nPhotonics"},{"key":"2026081710210419200_cit25","doi-asserted-by":"publisher","first-page":"162","DOI":"10.1038\/nphoton.2013.12","article-title":"Light Emission from Strained Germanium","volume":"7","author":"Boucaud","year":"2013","journal-title":"Nat. Photonics"},{"key":"2026081710210419200_cit26","doi-asserted-by":"publisher","first-page":"383","DOI":"10.4028\/www.scientific.net\/SSP.205-206.383","article-title":"Luminescence\nfrom Germanium and Germanium on Silicon","volume":"205\u2013206","author":"Arguirov","year":"2014","journal-title":"Solid\nState Phenom."},{"key":"2026081710210419200_cit27","doi-asserted-by":"publisher","first-page":"084518-1","DOI":"10.1063\/1.3005886","article-title":"Growth of Highly Tensile-Strained\nGe on Relaxed InxGa1\u2011xAs by Metal-Organic Chemical\nVapor Deposition","volume":"104","author":"Bai","year":"2008","journal-title":"J. Appl. Phys."},{"key":"2026081710210419200_cit28","doi-asserted-by":"publisher","first-page":"091901-1","DOI":"10.1063\/1.3559231","article-title":"High Quality\nTensile-Strained N-doped Germanium Thin Films Grown on InGaAs Buffer\nLayers by Metal-Organic Chemical Vapor Deposition","volume":"98","author":"Jakomin","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"2026081710210419200_cit29","doi-asserted-by":"publisher","first-page":"184","DOI":"10.1109\/JEDS.2015.2394743","article-title":"Strain-Engineered Biaxial Tensile Epitaxial Germanium\nfor High-Performance Ge\/InGaAs Tunnel Field-Effect Transistors","volume":"3","author":"Clavel","year":"2015","journal-title":"IEEE J. Electron Dev. Soc."},{"key":"2026081710210419200_cit30","doi-asserted-by":"publisher","first-page":"97550Y-1","DOI":"10.1117\/12.2218364","article-title":"Heterogeneously\nGrown Tunable Group-IV Laser on Silicon","volume":"9755","author":"Hudait","year":"2016","journal-title":"Proc.\nSPIE"},{"key":"2026081710210419200_cit31","doi-asserted-by":"publisher","first-page":"177404-1","DOI":"10.1103\/PhysRevLett.110.177404","article-title":"Optical Emission of a Strained Direct-Band-Gap\nGe Quantum Well Embedded Inside InGaAs Alloy Layers","volume":"110","author":"Pavarelli","year":"2013","journal-title":"Phys. Rev. Lett."},{"key":"2026081710210419200_cit32","doi-asserted-by":"publisher","first-page":"053518-1","DOI":"10.1063\/1.4864466","article-title":"Optical Properties\nof Tensile-Strained and Relaxed Ge Films Grown on InGaAs Buffer","volume":"115","author":"Volodin","year":"2014","journal-title":"J. Appl. Phys."},{"key":"2026081710210419200_cit33","doi-asserted-by":"publisher","first-page":"45","DOI":"10.1016\/j.apsusc.2013.10.012","article-title":"Mobility Enhancement\nin Tensile-Strained Ge Grown on InAlP Metamorphic Templates","volume":"291","author":"Wang","year":"2014","journal-title":"Appl. Surf. Sci."},{"key":"2026081710210419200_cit34","doi-asserted-by":"publisher","first-page":"4535","DOI":"10.1021\/acsaelm.1c00660","article-title":"Design, Theoretical and Experimental\nInvestigation of Tensile-Strained Germanium Quantum-Well Laser Structure","volume":"3","author":"Hudait","year":"2021","journal-title":"ACS App. Electron. Mater."},{"key":"2026081710210419200_cit35","doi-asserted-by":"publisher","first-page":"044052-1","DOI":"10.1103\/PhysRevApplied.10.044052","article-title":"First-Principles\nCalculations of Band Offsets at Heterovalent \u03b5-Ge\/InxAl1\u2011xAs Interfaces","volume":"10","author":"Greene-Diniz","year":"2018","journal-title":"Phys. Rev. Appl."},{"key":"2026081710210419200_cit36","doi-asserted-by":"publisher","first-page":"013710-1","DOI":"10.1063\/1.3437655","article-title":"Electronic\nBand Structure Calculations for Biaxially Strained Si, Ge, and III\u2013V\nSemiconductors","volume":"108","author":"Kim","year":"2010","journal-title":"J. Appl. Phys."},{"key":"2026081710210419200_cit37","doi-asserted-by":"publisher","first-page":"013710-1","DOI":"10.1063\/1.3279307","article-title":"Band Structure and\nOptical Gain of Tensile-Strained Germanium Based on a 30 Band k\u00b7p Formalism","volume":"107","author":"El Kurdi","year":"2010","journal-title":"J. Appl. Phys."},{"key":"2026081710210419200_cit38","doi-asserted-by":"publisher","first-page":"4219","DOI":"10.1063\/1.1544074","article-title":"Indium Content Measurements\nin Metamorphic High Electron Mobility Transistor Structures by Combination\nof x-ray Reciprocal Space Mapping and Transmission Electron Microscopy","volume":"93","author":"Chauveau","year":"2003","journal-title":"J. Appl. Phys."},{"key":"2026081710210419200_cit39","volume-title":"Semiconductors: Intrinsic Properties of Group IV Elements\nand III-V, II-VI, and I-VII Compounds","author":"Madelung","year":"1985"},{"key":"2026081710210419200_cit40","doi-asserted-by":"publisher","first-page":"344","DOI":"10.1063\/1.115439","article-title":"Correlation\nof Anisotropic Strain Relaxation with Substrate Misorientation Direction\nat InGaAs\/GaAs(001) Interfaces","volume":"67","author":"Goldman","year":"1995","journal-title":"Appl. Phys.\nLett."},{"key":"2026081710210419200_cit41","volume-title":"High Pressure\nin Semiconductor Physics II","author":"Anastassakis","year":"1998"},{"key":"2026081710210419200_cit42","doi-asserted-by":"publisher","first-page":"26470","DOI":"10.1021\/acsami.5b07385","article-title":"Heterogeneously-Grown Tunable Tensile\nStrained Germanium on Silicon for Photonic Devices","volume":"7","author":"Clavel","year":"2015","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026081710210419200_cit43","doi-asserted-by":"publisher","first-page":"1196","DOI":"10.1109\/LED.2017.2734040","article-title":"Band Offset Enhancement\nof a-Al2O3\/Tensile Ge for High Mobility Nanoscale\npMOS Devices","volume":"38","author":"Clavel","year":"2017","journal-title":"IEEE Electron Device Lett."},{"key":"2026081710210419200_cit44","doi-asserted-by":"publisher","first-page":"1620","DOI":"10.1103\/PhysRevLett.44.1620","article-title":"Precise\nDetermination of the Valence-Band Edge in x-ray Photoemission Spectra:\nApplication to Measurement of Semiconductor Interface Potentials","volume":"44","author":"Kraut","year":"1980","journal-title":"Phys. Rev. Lett."},{"key":"2026081710210419200_cit45","volume-title":"Materials Aspects of GaAs and InP Based Structures","author":"Swaminathan","year":"1991"},{"key":"2026081710210419200_cit46","doi-asserted-by":"crossref","DOI":"10.1002\/9783527665709","volume-title":"Surfaces and Interfaces\nof Electronic Materials","author":"Brillson","year":"2010"},{"key":"2026081710210419200_cit47","doi-asserted-by":"publisher","first-page":"1283","DOI":"10.1103\/PhysRevLett.69.1283","article-title":"Microscopic Capacitors and Neutral\nInterfaces in III-V\/IV\/III-V Semiconductor Heterostructures","volume":"69","author":"Biasol","year":"1992","journal-title":"Phys. Rev. Lett."},{"key":"2026081710210419200_cit48","doi-asserted-by":"publisher","first-page":"31","DOI":"10.1016\/0749-6036(89)90090-6","article-title":"Theory of\nBand Offsets at Semiconductor Heterojunctions: An ab-initio Linear Response Approach","volume":"6","author":"Resta","year":"1989","journal-title":"Superlattices Microstruct."},{"key":"2026081710210419200_cit49","doi-asserted-by":"publisher","first-page":"8154","DOI":"10.1103\/PhysRevB.35.8154","article-title":"Theoretical Study of Band Offsets\nat Semiconductor Interfaces","volume":"35","author":"Van de\nWalle","year":"1987","journal-title":"Phys. Rev. B: Condens.\nMatter Mater. Phys."},{"key":"2026081710210419200_cit50","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/0167-5729(95)00008-9","article-title":"Heterojunction\nBand Offset Engineering","volume":"25","author":"Franciosi","year":"1996","journal-title":"Surf. Sci. Rep."},{"key":"2026081710210419200_cit51","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/S0081-1947(08)60397-5","article-title":"Band Offsets in Semiconductor Heterojunctions","volume":"46","author":"Yu","year":"1992","journal-title":"Solid State Phys."},{"key":"2026081710210419200_cit52","doi-asserted-by":"publisher","first-page":"555","DOI":"10.1103\/PhysRevLett.64.555","article-title":"Role of Interface Strain in a Lattice-Matched\nHeterostructure","volume":"64","author":"Hybertsen","year":"1990","journal-title":"Phys. Rev. Lett."},{"key":"2026081710210419200_cit53","doi-asserted-by":"publisher","first-page":"4947","DOI":"10.1021\/am405988f","article-title":"Tensile-Strained Nanoscale Ge\/In0.16Ga0.84As Heterostructure for Tunnel Field-Effect\nTransistor","volume":"6","author":"Zhu","year":"2014","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026081710210419200_cit54","doi-asserted-by":"publisher","first-page":"2646","DOI":"10.1021\/acsaelm.9b00615","article-title":"Engineering the Interfacial Electronic\nStructure of Epitaxial Ge\/AlAs(001) Heterointerfaces via Substitutional\nBoron Incorporation: The Roles of Doping and Interface Stoichiometry","volume":"1","author":"Clavel","year":"2019","journal-title":"ACS Appl. Electron. Mater."},{"key":"2026081710210419200_cit55","doi-asserted-by":"publisher","first-page":"909","DOI":"10.1016\/S0025-5408(00)00278-6","article-title":"Atomic\nForce Microscopic Study of Surface Morphology in Si-doped epi-GaAs\non Ge Substrates: Effect of Off-Orientation","volume":"35","author":"Hudait","year":"2000","journal-title":"Mater. Res. Bull."},{"key":"2026081710210419200_cit56","doi-asserted-by":"publisher","first-page":"5972","DOI":"10.1063\/1.1368870","article-title":"Self-Annihilation\nof Antiphase Boundaries in GaAs Epilayers on Ge Substrates Grown by\nMetal-Organic Vapor-Phase Epitaxy","volume":"89","author":"Hudait","year":"2001","journal-title":"J. Appl.\nPhys."},{"key":"2026081710210419200_cit57","doi-asserted-by":"publisher","first-page":"31","DOI":"10.1016\/S0022-0248(01)02131-5","article-title":"Epitaxial Growth of InGaAs on Misoriented GaAs(100)\nSubstrate by Metal-Organic Vapor Phase Epitaxy","volume":"236","author":"Takano","year":"2002","journal-title":"J. Cryst. Growth"},{"key":"2026081710210419200_cit58","doi-asserted-by":"publisher","first-page":"2618","DOI":"10.1063\/1.372227","article-title":"Metal-Organic\nChemical Vapor Deposition of Single Domain GaAs on Ge\/GexSi1\u2011x\/Si and Ge Substrates","volume":"87","author":"Ting","year":"2000","journal-title":"J. Appl.\nPhys."},{"key":"2026081710210419200_cit59","doi-asserted-by":"publisher","first-page":"5361","DOI":"10.1016\/j.tsf.2012.04.027","article-title":"Epitaxy of In0.01Ga0.99As on\nGe\/Offcut Si (001) Virtual Substrate","volume":"520","author":"Hu","year":"2012","journal-title":"Thin Solid\nFilms"}],"container-title":["ACS Omega"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsomega.1c06203","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/7\/7\/5946\/3663254\/ao1c06203.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/7\/7\/5946\/3663254\/ao1c06203.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,8,17]],"date-time":"2026-08-17T14:33:35Z","timestamp":1786977215000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/acsodf\/article\/7\/7\/5946\/380793\/Mapping-the-Interfacial-Electronic-Structure-of"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,2,8]]},"references-count":59,"journal-issue":{"issue":"7","published-online":{"date-parts":[[2022,2,8]]},"published-print":{"date-parts":[[2022,2,22]]}},"URL":"https:\/\/doi.org\/10.1021\/acsomega.1c06203","relation":{},"ISSN":["2470-1343"],"issn-type":[{"value":"2470-1343","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,2,8]]}}}