{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,11]],"date-time":"2026-08-11T16:23:36Z","timestamp":1786465416048,"version":"build-2736575974"},"reference-count":39,"publisher":"American Chemical Society (ACS)","issue":"31","license":[{"start":{"date-parts":[[2026,7,30]],"date-time":"2026-07-30T00:00:00Z","timestamp":1785369600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,8,11]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>In this work, we have experimentally fabricated a MoSe2\/Bi2Se3-based type-II van der Waals (vdW) heterojunction photodetector (PD) suitable for detecting optical signals between 400 and 1000 nm. This PD shows excellent performance metrics such as a peak responsivity of 13.35 A\/W and a detectivity of 5.7 \u00d7 1013 Jones at 400 nm. Also, the fabricated PD exhibited an ultrahigh external quantum efficiency of 4038% at 400 nm with rise and fall times of 105 and 166 ms, respectively. The built-in potential at the heterojunction facilitated excellent separation and transport of the photogenerated electron\u2013hole pairs through suitable energy band diagrams. Also, various Schottky diode parameters of the device have been extracted from the measured I\u2013V characteristics. Using the modeled parameters, I\u2013V characteristics were redrawn and compared with the measured values. Between 0 and 5 V, the modeled I\u2013V characteristics showed minimum and maximum errors of 0.57% and 6.21%, respectively.<\/jats:p>","DOI":"10.1021\/acsomega.6c00742","type":"journal-article","created":{"date-parts":[[2026,8,4]],"date-time":"2026-08-04T13:22:45Z","timestamp":1785849765000},"page":"45766-45775","source":"Crossref","is-referenced-by-count":0,"title":["Two-Dimensional\nBi2Se3\/MoSe2 Heterostructure for\nPhotodetection Applications"],"prefix":"10.1021","volume":"11","author":[{"given":"Sanjana","family":"Mathew","sequence":"first","affiliation":[{"name":"BITS-Pilani Hyderabad Campus , , Jawhar Nagar, Shameerpet , , ,","place":["Hyderabad, Telangana, India, 500078"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Harish R.","family":"Ramachandran","sequence":"additional","affiliation":[{"name":"BITS-Pilani Hyderabad Campus , , Jawhar Nagar, Shameerpet , , ,","place":["Hyderabad, Telangana, India, 500078"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nikhilamol","family":"Simon","sequence":"additional","affiliation":[{"name":"BITS-Pilani Hyderabad Campus , , Jawhar Nagar, Shameerpet , , ,","place":["Hyderabad, Telangana, India, 500078"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4829-1367","authenticated-orcid":true,"given":"Chanchal","family":"Chakraborty","sequence":"additional","affiliation":[{"name":"BITS-Pilani Hyderabad Campus , , Jawhar Nagar, Shameerpet , , ,","place":["Hyderabad, Telangana, India, 500078"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6021-4391","authenticated-orcid":true,"given":"Subhradeep","family":"Pal","sequence":"additional","affiliation":[{"name":"BITS-Pilani Hyderabad Campus , , Jawhar Nagar, Shameerpet , , ,","place":["Hyderabad, Telangana, India, 500078"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,7,30]]},"reference":[{"key":"2026081110141238600_cit1","doi-asserted-by":"publisher","first-page":"41298","DOI":"10.1021\/acsnano.5c15681","article-title":"Low-Noise Electrically Modulated Dual-Mode Photodetectors with Perovskite\/Organic\nDual Absorption Layers","volume":"19","author":"Zhou","year":"2025","journal-title":"ACS Nano"},{"key":"2026081110141238600_cit2","doi-asserted-by":"publisher","first-page":"2402192","DOI":"10.1002\/lpor.202402192","article-title":"Dual-mode\nphotodetectors mimicking retinal rod and cone cells for high dynamic\nrange image sensor","volume":"19","author":"Zhou","year":"2025","journal-title":"Laser Photonics Rev."},{"key":"2026081110141238600_cit3","doi-asserted-by":"publisher","first-page":"343","DOI":"10.1016\/j.mattod.2025.10.009","article-title":"Bias-switchable dual-mode organic photodetectors for spectrally adaptive\nvision and secure encoding","volume":"90","author":"Tan","year":"2025","journal-title":"Mater. Today"},{"key":"2026081110141238600_cit4","doi-asserted-by":"publisher","first-page":"14978","DOI":"10.1021\/acsnano.4c00839","article-title":"Demonstration of a 3D-assembled\ndual-mode photodetector\nbased on tubular graphene\/III\u2013V semiconductors heterostructure\nand coplanar three electrodes","volume":"18","author":"Xu","year":"2024","journal-title":"ACS Nano"},{"key":"2026081110141238600_cit5","doi-asserted-by":"publisher","first-page":"2500491","DOI":"10.1002\/adma.202500491","article-title":"Bias-Switchable Photomultiplication and Photovoltaic\nDual-Mode Near-Infrared Organic Photodetector","volume":"37","author":"Huang","year":"2025","journal-title":"Adv. Mater."},{"key":"2026081110141238600_cit6","doi-asserted-by":"publisher","first-page":"041107","DOI":"10.1063\/5.0237800","article-title":"High-performance\ndual-mode extended SWIR photodetector based on p-WSe2\/graphene\/n-Ge\np-g-n heterostructure","volume":"13","author":"Ding","year":"2025","journal-title":"APL Mater."},{"key":"2026081110141238600_cit7","doi-asserted-by":"publisher","first-page":"335106","DOI":"10.1088\/1361-6463\/ad4660","article-title":"A voltage-driven\ndual-mode MoSe2 photodetector with graphene as van der\nWaals contact","volume":"57","author":"Xia","year":"2024","journal-title":"J. Phys. D: Appl. Phys."},{"key":"2026081110141238600_cit8","doi-asserted-by":"publisher","first-page":"362","DOI":"10.1038\/s41377-025-01995-8","article-title":"2D materials-based next-generation multidimensional photodetectors","volume":"14","author":"Han","year":"2025","journal-title":"Light:Sci. Appl."},{"key":"2026081110141238600_cit9","doi-asserted-by":"publisher","first-page":"2302339","DOI":"10.1002\/adom.202302339","article-title":"High-Performance\nPhotodetector Based on Bi2Se3\/GeSe Heterojunction\nwith Band Alignment Evolution","volume":"12","author":"Li","year":"2024","journal-title":"Adv. Opt. Mater."},{"key":"2026081110141238600_cit10","doi-asserted-by":"publisher","first-page":"2400199","DOI":"10.1002\/apxr.202400199","article-title":"Advances in 2D materials for infrared\nphotodetection: Synthesis, heterostructures, and device innovations","volume":"4","author":"Jiang","year":"2025","journal-title":"Adv. Phys. Res."},{"key":"2026081110141238600_cit11","doi-asserted-by":"publisher","first-page":"2403412","DOI":"10.1002\/adom.202403412","article-title":"Recent\nProgress in 2D Heterostructures\nfor High-Performance Photodetectors and Their Applications","volume":"13","author":"Ahn","year":"2025","journal-title":"Adv. Opt. Mater."},{"key":"2026081110141238600_cit12","doi-asserted-by":"publisher","first-page":"1803807","DOI":"10.1002\/adfm.201803807","article-title":"Progress, challenges,\nand opportunities for 2D material based photodetectors","volume":"29","author":"Long","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"2026081110141238600_cit13","doi-asserted-by":"publisher","first-page":"17881","DOI":"10.1039\/D5NR01920F","article-title":"2D material-based\ninfrared photodetectors: recent progress, challenges, and perspectives","volume":"17","author":"Zulfiqar","year":"2025","journal-title":"Nanoscale"},{"key":"2026081110141238600_cit14","doi-asserted-by":"publisher","first-page":"6122","DOI":"10.1039\/d1tc00949d","article-title":"Recent developments\nin the photodetector\napplications of Schottky diodes based on 2D materials","volume":"9","author":"Ezhilmaran","year":"2021","journal-title":"J. Mater. Chem. C"},{"key":"2026081110141238600_cit15","doi-asserted-by":"publisher","first-page":"245107","DOI":"10.1103\/physrevb.82.245107","article-title":"Topological\ninsulators for high-performance\nterahertz to infrared applications","volume":"82","author":"Zhang","year":"2010","journal-title":"Phys. Rev.\nB:Condens. Matter Mater. Phys."},{"key":"2026081110141238600_cit16","doi-asserted-by":"publisher","first-page":"2402668","DOI":"10.1002\/smll.202402668","article-title":"Recent progress\nof\n2D materials-based photodetectors from UV to THz waves: principles,\nmaterials, and applications","volume":"20","author":"Abdullah","year":"2024","journal-title":"Small"},{"key":"2026081110141238600_cit17","doi-asserted-by":"publisher","first-page":"5113","DOI":"10.1021\/acsnano.6b00272","article-title":"High-responsivity,\nhigh-detectivity, ultrafast topological insulator Bi2Se3\/silicon heterostructure broadband photodetectors","volume":"10","author":"Zhang","year":"2016","journal-title":"ACS Nano"},{"key":"2026081110141238600_cit18","doi-asserted-by":"publisher","first-page":"194","DOI":"10.1038\/nature08916","article-title":"The birth\nof topological insulators","volume":"464","author":"Moore","year":"2010","journal-title":"Nature"},{"key":"2026081110141238600_cit19","doi-asserted-by":"publisher","first-page":"814","DOI":"10.3390\/ma10070814","article-title":"The property,\npreparation and application\nof topological insulators: a review","volume":"10","author":"Tian","year":"2017","journal-title":"Materials"},{"key":"2026081110141238600_cit20","doi-asserted-by":"publisher","first-page":"5018","DOI":"10.1039\/D3MA00452J","article-title":"Research progress\non topological material-based photodetectors","volume":"4","author":"Wu","year":"2023","journal-title":"Mater. Adv."},{"key":"2026081110141238600_cit21","doi-asserted-by":"publisher","first-page":"1801164","DOI":"10.1002\/adma.201801164","article-title":"Recent progress\nand future prospects of 2D-based photodetectors","volume":"30","author":"Huo","year":"2018","journal-title":"Adv. Mater."},{"key":"2026081110141238600_cit22","doi-asserted-by":"publisher","first-page":"102001","DOI":"10.7566\/JPSJ.82.102001","article-title":"Topological\ninsulator materials","volume":"82","author":"Ando","year":"2013","journal-title":"J. Phys. Soc. Jpn."},{"key":"2026081110141238600_cit23","doi-asserted-by":"publisher","first-page":"5482","DOI":"10.1109\/ted.2024.3427610","article-title":"Covalent Polymeric Framework\/Bi2Se3-Based Heterostructure\nfor Highly Efficient Wideband Photodetector","volume":"71","author":"Harish Yuvaraj","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"key":"2026081110141238600_cit24","doi-asserted-by":"publisher","first-page":"1600018","DOI":"10.1002\/advs.201600018","article-title":"Ultrafast, broadband photodetector based on MoSe2\/silicon\nheterojunction with vertically standing layered structure using graphene\nas transparent electrode","volume":"3","author":"Mao","year":"2016","journal-title":"Adv. Sci."},{"key":"2026081110141238600_cit25","doi-asserted-by":"publisher","first-page":"107302","DOI":"10.1016\/j.mssp.2022.107302","article-title":"Band alignment and charge transport\nstudy of Au nanoparticles decorated over MoS2\/MoSe2 hybrid heterostructure for plasmon enhanced photodetection","volume":"156","author":"Mathew","year":"2023","journal-title":"Mater. Sci. Semicond. Process."},{"key":"2026081110141238600_cit26","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202502020","article-title":"High-Performance\nPhotodetection in MoSe2\/Bi2Se3\/MoTe2 Dual Heterostructure Enabled by Topological\nInterlayer Design","volume":"13","author":"Xiao","year":"2025","journal-title":"Adv. Opt. Mater."},{"key":"2026081110141238600_cit27","doi-asserted-by":"publisher","first-page":"025003","DOI":"10.1088\/2632-959X\/ad3cfc","article-title":"Large area MoSe2 and MoSe2\/Bi2Se3 films on\nsapphire (0001) for near-infrared photodetection","volume":"5","author":"Kumar","year":"2024","journal-title":"Nano Express"},{"key":"2026081110141238600_cit28","doi-asserted-by":"publisher","first-page":"3804","DOI":"10.1038\/s41598-019-40394-z","article-title":"Novel synthesis\nof\ntopological insulator based nanostructures (Bi2Te3) demonstrating high performance photodetection","volume":"9","author":"Sharma","year":"2019","journal-title":"Sci. Rep."},{"key":"2026081110141238600_cit29","doi-asserted-by":"publisher","first-page":"407","DOI":"10.1007\/s11082-017-1242-x","article-title":"Analysis of dark current\nconsidering trap-assisted tunneling mechanism for InGaAs PIN photodetectors","volume":"49","author":"Ma","year":"2017","journal-title":"Opt. Quantum Electron."},{"key":"2026081110141238600_cit30","doi-asserted-by":"publisher","first-page":"245427","DOI":"10.1103\/physrevb.73.245427","article-title":"Effect of carrier trapping\non the hysteretic current-voltage characteristics\nin Ag\/La0.7Ca0.3MnO3\/ Pt heterostructures","volume":"73","author":"Shang","year":"2006","journal-title":"Phys. Rev. B:Condens. Matter Mater. Phys."},{"key":"2026081110141238600_cit31","doi-asserted-by":"publisher","first-page":"074102","DOI":"10.1063\/1.4818947","article-title":"Correlation between I (current)-V\n(voltage) characteristics and thermally stimulated depolarization\ncurrent of Mn-doped BaTiO3 multilayer ceramic capacitor","volume":"114","author":"Yoon","year":"2013","journal-title":"J. Appl. Phys."},{"key":"2026081110141238600_cit32","doi-asserted-by":"publisher","first-page":"1207","DOI":"10.1109\/LPT.2023.3311869","article-title":"Engineering oxygen\nvacancies in CeO2 for high-performance\nUV-vis photodetector","volume":"35","author":"Saha","year":"2023","journal-title":"IEEE Photonics Technol.\nLett."},{"key":"2026081110141238600_cit33","doi-asserted-by":"publisher","first-page":"100550","DOI":"10.1016\/j.mtener.2020.100550","article-title":"Self-powered photodetector\nbased on SnSe2\/MoSe2 heterostructure","volume":"18","author":"Zankat","year":"2020","journal-title":"Mater. Today Energy"},{"key":"2026081110141238600_cit34","doi-asserted-by":"publisher","first-page":"1289","DOI":"10.1039\/D1TC04192D","article-title":"Organic rubrene\/topological\ninsulator Bi2Se3\/SiO2 hybrid heterojunction\nphotodetectors for broadband\nand ultrafast photodetection application","volume":"10","author":"Wali","year":"2022","journal-title":"J.\nMater. Chem. C"},{"key":"2026081110141238600_cit35","doi-asserted-by":"publisher","first-page":"2302339","DOI":"10.1002\/adom.202302339","article-title":"High-Performance\nPhotodetector Based on Bi2Se3\/GeSe Heterojunction\nwith Band Alignment Evolution","volume":"12","author":"Li","year":"2024","journal-title":"Adv. Opt. Mater."},{"key":"2026081110141238600_cit36","doi-asserted-by":"publisher","first-page":"111980","DOI":"10.1016\/j.mee.2023.111980","article-title":"Ultrasensitive WSe2\/MoSe2 heterojunction photodetector enhanced by\nphotogating effect","volume":"274","author":"Tang","year":"2023","journal-title":"Microelectron. Eng."},{"key":"2026081110141238600_cit37","doi-asserted-by":"publisher","first-page":"9039","DOI":"10.1021\/acsami.3c17477","article-title":"Printed MoSe2\/GaAs Photodetector\nEnabling Ultrafast and Broadband Photodetection up to 1.5 \u03bcm","volume":"16","author":"Debnath","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026081110141238600_cit38","doi-asserted-by":"publisher","first-page":"2450","DOI":"10.1021\/acsphotonics.4c00347","article-title":"Topological insulator Bi2Se3 heterojunction\nwith a low dark current for midwave infrared photodetection","volume":"11","author":"Zhao","year":"2024","journal-title":"ACS Photonics"},{"key":"2026081110141238600_cit39","doi-asserted-by":"publisher","first-page":"85","DOI":"10.1063\/1.97359","article-title":"Extraction of Schottky diode parameters from forward\ncurrent-voltage characteristics","volume":"49","author":"Cheung","year":"1986","journal-title":"Appl. Phys.\nLett."}],"container-title":["ACS Omega"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsomega.6c00742","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/11\/31\/45766\/66341080\/acsomega.6c00742.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/11\/31\/45766\/66341080\/acsomega.6c00742.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,8,11]],"date-time":"2026-08-11T14:59:31Z","timestamp":1786460371000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/acsodf\/article\/11\/31\/45766\/5237368\/Two-Dimensional-Bi2Se3-MoSe2-Heterostructure-for"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7,30]]},"references-count":39,"journal-issue":{"issue":"31","published-online":{"date-parts":[[2026,7,30]]},"published-print":{"date-parts":[[2026,8,11]]}},"URL":"https:\/\/doi.org\/10.1021\/acsomega.6c00742","relation":{},"ISSN":["2470-1343"],"issn-type":[{"value":"2470-1343","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7,30]]}}}