{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T12:13:20Z","timestamp":1788437600570,"version":"build-2803163510"},"reference-count":33,"publisher":"American Chemical Society (ACS)","issue":"34","license":[{"start":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T00:00:00Z","timestamp":1787011200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/100031839","name":"Korea Research Institute for Defense Technology Planning and Advancement","doi-asserted-by":"publisher","award":["C250017"],"award-info":[{"award-number":["C250017"]}],"id":[{"id":"10.13039\/100031839","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2023-00237827"],"award-info":[{"award-number":["RS-2023-00237827"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-202400437570"],"award-info":[{"award-number":["RS-202400437570"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Sb-based III\u2013V semiconductor materials are crucial for various applications in the short-wave and midwave infrared spectral ranges. However, epitaxial growth involving multiple group-V elements remains challenging because of their strong dependence on growth temperatures. In this work, we investigate the epitaxial growth of GaAsSb\/AlAsSb layers on GaAs substrates under varying Sb fluxes and growth temperatures. We first identify an optimal growth window for AlAsSb to be between 580 and 620 \u00b0C, where smooth morphology and well-defined X-ray diffraction peaks are obtained. A systematic growth temperature study from 535 to 635 \u00b0C shows that the maximum Sb incorporation occurs at 585 \u00b0C. We additionally examine the different Sb incorporation rates and find that Al-containing layers incorporate significantly less Sb than their Ga-containing counterparts. This systematic study clarifies the temperature- and flux-dependent incorporation mechanisms in the GaAsSb\/AlAsSb system and provides important details for the growth of high-quality GaAsSb and AlAsSb layers on GaAs for infrared photonic and optoelectronic applications.<\/jats:p>","DOI":"10.1021\/acsomega.6c03647","type":"journal-article","created":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T17:02:17Z","timestamp":1787072537000},"page":"51141-51147","source":"Crossref","is-referenced-by-count":0,"title":["Effects of Growth\nTemperature on the Compositions\nof GaAsSb\/AlAsSb Epitaxial Layers Grown on GaAs Substrates"],"prefix":"10.1021","volume":"11","author":[{"given":"Tsimafei","family":"Laryn","sequence":"first","affiliation":[{"name":"Korea Institute of Science and Technology , , ,","place":["Seoul, South Korea, 02792"]},{"name":"KIST School, University of Science and Technology , , ,","place":["Seoul, Republic of Korea, 02792"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yeonhwa","family":"Kim","sequence":"additional","affiliation":[{"name":"Korea Institute of Science and Technology , , ,","place":["Seoul, South Korea, 02792"]},{"name":"Korea University , , ,","place":["Seoul, South Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1551-201X","authenticated-orcid":true,"given":"Rafael Jumar","family":"Chu","sequence":"additional","affiliation":[{"name":"Korea Institute of Science and Technology , , ,","place":["Seoul, South Korea, 02792"]},{"name":"KIST School, University of Science and Technology , , ,","place":["Seoul, Republic of Korea, 02792"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Won Jun","family":"Choi","sequence":"additional","affiliation":[{"name":"Korea Institute of Science and Technology , , ,","place":["Seoul, South Korea, 02792"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1018-6414","authenticated-orcid":true,"given":"Daehwan","family":"Jung","sequence":"additional","affiliation":[{"name":"Korea Institute of Science and Technology , , ,","place":["Seoul, South Korea, 02792"]},{"name":"KIST School, University of Science and Technology , , ,","place":["Seoul, Republic of Korea, 02792"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,18]]},"reference":[{"issue":"4","key":"2026090307184770200_cit1","doi-asserted-by":"publisher","first-page":"441","DOI":"10.1366\/000370206776593780","article-title":"New methodology to\nobtain a calibration model for noninvasive near-infrared blood glucose\nmonitoring","volume":"60","author":"Maruo","year":"2006","journal-title":"Appl. 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Sci."},{"issue":"4","key":"2026090307184770200_cit28","doi-asserted-by":"publisher","first-page":"141","DOI":"10.1007\/s10832-021-00263-6","article-title":"Back-to-Basics tutorial: X-ray diffraction of thin\nfilms","volume":"47","author":"Harrington","year":"2021","journal-title":"J. Electroceram"},{"key":"2026090307184770200_cit29","doi-asserted-by":"publisher","first-page":"112401","DOI":"10.1016\/j.optlastec.2024.112401","article-title":"Emission-state transition\nin InGaAsSb\/AlGaAsSb multiple\nquantum wells induced by rapid thermal annealing","volume":"183","author":"Kang","year":"2025","journal-title":"Opt. Laser Technol."},{"key":"2026090307184770200_cit30","doi-asserted-by":"publisher","first-page":"984","DOI":"10.1016\/j.jallcom.2024.173910","article-title":"Effect of InAs insertion\nlayer on the structural and optical property improvement of InGaAs\/InAlAs\nmultiple quantum wells","volume":"984","author":"Hou","year":"2024","journal-title":"J. Alloys Compd."},{"key":"2026090307184770200_cit31","doi-asserted-by":"publisher","first-page":"249","DOI":"10.1016\/j.jlumin.2022.119056","article-title":"Influence\nof atom segregation on the structure and luminescence of InGaAsSb\/AlGaAsSb\nmultiple quantum wells","volume":"249","author":"Kang","year":"2022","journal-title":"J. Lumin."},{"issue":"5","key":"2026090307184770200_cit32","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.10.054067","article-title":"Misfit-Dislocation Distributions in Heteroepitaxy:\nFrom Mesoscale\nMeasurements to Individual Defects and Back","volume":"10","author":"Rovaris","year":"2018","journal-title":"Phys. Rev. Appl."},{"issue":"4","key":"2026090307184770200_cit33","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.98.045305","article-title":"Evidence of\nnanoscale\nAnderson localization induced by intrinsic compositional disorder\nin InGaN\/GaN quantum wells by scanning tunneling luminescence spectroscopy","volume":"98","author":"Hahn","year":"2018","journal-title":"Phys. Rev. B"}],"container-title":["ACS Omega"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsomega.6c03647","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/11\/34\/51141\/66847319\/acsomega.6c03647.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/11\/34\/51141\/66847319\/acsomega.6c03647.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T11:18:55Z","timestamp":1788434335000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/acsodf\/article\/11\/34\/51141\/5275321\/Effects-of-Growth-Temperature-on-the-Compositions"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,18]]},"references-count":33,"journal-issue":{"issue":"34","published-online":{"date-parts":[[2026,8,18]]},"published-print":{"date-parts":[[2026,9,1]]}},"URL":"https:\/\/doi.org\/10.1021\/acsomega.6c03647","relation":{},"ISSN":["2470-1343"],"issn-type":[{"value":"2470-1343","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,18]]}}}