{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T12:13:32Z","timestamp":1788437612970,"version":"build-2803163510"},"reference-count":111,"publisher":"American Chemical Society (ACS)","issue":"34","license":[{"start":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T00:00:00Z","timestamp":1787097600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003093","name":"Ministry of Higher Education, Malaysia","doi-asserted-by":"publisher","award":["FRGS\/1\/2024\/STG05\/USM\/02\/2"],"award-info":[{"award-number":["FRGS\/1\/2024\/STG05\/USM\/02\/2"]}],"id":[{"id":"10.13039\/501100003093","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Indium gallium nitride (InGaN) has attracted considerable attention for ultraviolet (UV) optoelectronic applications due to its tunable bandgap and compatibility with GaN-based device platforms. However, the optoelectronic performance of InGaN is strongly influenced by lattice strain, indium distribution, surface morphology, and carrier transport properties. In this work, the UV photoresponse of an Mg-doped InGaN\/GaN heterostructure subjected to postgrowth annealing at 600 \u00b0C is systematically investigated. Structural properties, including lattice parameters, strain state, degree of relaxation, and indium composition, are examined using high-resolution X-ray diffraction reciprocal-space mapping (HRXRD RSM). The results indicate that the Mg-doped InGaN epilayer is partially relaxed on the GaN layer and exhibits phase separation. The indium composition determined from HRXRD RSM ranges from 4.12% to 8.77%. Atomic force microscopy analysis reveals a step-terrace surface morphology. Optical absorption measurements obtained from ultraviolet\u2013visible spectroscopy show a sharp absorption edge at \u223c380\u2013382 nm, corresponding to a bandgap of \u223c3.25 eV, indicating suitability for UV photodetection. Hall effect measurements reveal a carrier concentration of \u223c1018 cm\u20133 and a mobility of \u223c188 cm2 V\u20131 s\u20131. The fabricated photodetector exhibits a responsivity of 0.024 A W\u20131 and a rise\/fall response time of 0.70 s at a bias of 6 V, demonstrating the potential of Mg-doped InGaN for UV photodetector applications.<\/jats:p>","DOI":"10.1021\/acsomega.6c04339","type":"journal-article","created":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T11:01:33Z","timestamp":1787137293000},"page":"51296-51311","source":"Crossref","is-referenced-by-count":0,"title":["Reciprocal Space\nMapping Analysis of Mg-Doped InGaN\/GaN\nHeterostructure for Bias-Dependent UV Photodetection Behavior"],"prefix":"10.1021","volume":"11","author":[{"given":"Nor Athirah","family":"Mohd Sukri","sequence":"first","affiliation":[{"name":"Universiti Sains Malaysia , , , ,","place":["Georgetown, Pulau Pinang, Malaysia, 11800 USM"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Momin Shawqi Mohammed","family":"Abutawahina","sequence":"additional","affiliation":[{"name":"Universiti Sains Malaysia , , , ,","place":["Georgetown, Pulau Pinang, Malaysia, 11800 USM"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2023-6419","authenticated-orcid":true,"given":"Sha Shiong","family":"Ng","sequence":"additional","affiliation":[{"name":"Universiti Sains Malaysia , , , ,","place":["Georgetown, Pulau Pinang, Malaysia, 11800 USM"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wen-Jih","family":"Lin","sequence":"additional","affiliation":[{"name":"Bruker AXS , ,","place":["New Taipei City, Taiwan, Republic of China, 22175"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Victor","family":"Colas","sequence":"additional","affiliation":[{"name":"Universite\u0301 de Lorraine , , ,","place":["Metz, France, F-57000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sidi Ould Saad","family":"Hamady","sequence":"additional","affiliation":[{"name":"Universite\u0301 de Lorraine , , ,","place":["Metz, France, F-57000"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,19]]},"reference":[{"issue":"39","key":"2026090307195008400_cit1","doi-asserted-by":"publisher","first-page":"12121","DOI":"10.1039\/C9TC03866C","article-title":"Synthesis of large-area\n2D WS2 films and fabrication of a heterostructure for self-powered\nultraviolet photodetection and imaging applications","volume":"7","author":"Zhao","year":"2019","journal-title":"J. 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