{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T18:22:51Z","timestamp":1792002171051,"version":"4.4.0"},"reference-count":54,"publisher":"American Chemical Society (ACS)","issue":"32","license":[{"start":{"date-parts":[[2026,8,7]],"date-time":"2026-08-07T00:00:00Z","timestamp":1786060800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004731","name":"Natural Science Foundation of Zhejiang Province","doi-asserted-by":"publisher","award":["LD24E020004"],"award-info":[{"award-number":["LD24E020004"]}],"id":[{"id":"10.13039\/501100004731","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,8,18]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>To develop a new generation of high-performance silicon-based electro-optic modulators, it is necessary to find an electro-optic crystal with a simple fabrication process, stable chemical properties, and large Pockels coefficients, such as strontium barium niobate (SrxBa1\u2013xNb2O6, SBN). In this work, potassium-doped Sr0.75Ba0.25Nb2O6 and sodium-doped Sr0.75Ba0.25Nb2O6 buffers were fabricated on SiO2 via the sol\u2013gel method, followed by the deposition of Sr0.75Ba0.25Nb2O6 (SBN75) films using radio frequency magnetron sputtering (RFMS). This sequential processing enabled the realization of SBN75 films exhibiting a c-axis preferential orientation. Lattice mismatch is not a limiting factor in this approach. Furthermore, the extracted Pockels coefficient r33 of highly c-axis-oriented SBN75 films reached a maximum value of 431.3 pm\/V, which is 10 times larger than that in lithium niobate (LN). The aforementioned findings make SBN75 a promising candidate for compact and high-speed electro-optic modulators.<\/jats:p>","DOI":"10.1021\/acsomega.6c04548","type":"journal-article","created":{"date-parts":[[2026,8,7]],"date-time":"2026-08-07T07:01:34Z","timestamp":1786086094000},"page":"48173-48182","source":"Crossref","is-referenced-by-count":2,"title":["Silicon-Based Highly\n                    <i>c<\/i>\n                    -Axis-Oriented\nStrontium Barium Niobate Films with Large Pockels Coefficients"],"prefix":"10.1021","volume":"11","author":[{"given":"Jiangfeng","family":"Yuan","sequence":"first","affiliation":[{"name":"Zhejiang University , , ,","place":["Hangzhou, China, 310058"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jun","family":"Zheng","sequence":"additional","affiliation":[{"name":"Zhejiang University , , ,","place":["Hangzhou, China, 310058"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sen","family":"Liang","sequence":"additional","affiliation":[{"name":"Zhejiang University , , ,","place":["Hangzhou, China, 310058"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Peng","family":"Rui","sequence":"additional","affiliation":[{"name":"Zhejiang University , , ,","place":["Hangzhou, China, 310058"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hui","family":"Yu","sequence":"additional","affiliation":[{"name":"Zhejiang Lab , ,","place":["Hangzhou, China, 311121"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1084-5376","authenticated-orcid":true,"given":"Hui","family":"Ye","sequence":"additional","affiliation":[{"name":"Zhejiang University , , ,","place":["Hangzhou, China, 310058"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,7]]},"reference":[{"key":"2026081811074033600_cit1","doi-asserted-by":"publisher","first-page":"107","DOI":"10.1109\/CLEO.2005.201692","article-title":"Electro-Optic Modulator on\nSilicon-on-Insulator Substrates Using Ring Resonators","volume-title":"CLEO Conference on Lasers and Electro-Optics, 2005","author":"Pradhan","year":"2005"},{"issue":"7040","key":"2026081811074033600_cit2","doi-asserted-by":"publisher","first-page":"325","DOI":"10.1038\/nature03569","article-title":"Micrometre-Scale Silicon\nElectro-Optic Modulator","volume":"435","author":"Xu","year":"2005","journal-title":"Nature"},{"issue":"1","key":"2026081811074033600_cit3","doi-asserted-by":"publisher","first-page":"123","DOI":"10.1109\/JQE.1987.1073206","article-title":"Electrooptical Effects\nin Silicon","volume":"23","author":"Soref","year":"1987","journal-title":"IEEE J. Quantum Electron."},{"issue":"4","key":"2026081811074033600_cit4","doi-asserted-by":"publisher","first-page":"363","DOI":"10.1109\/68.376803","article-title":"Silicon Thermooptical\nMicromodulator with 700-kHz \u22123-dB Bandwidth","volume":"7","author":"Cocorullo","year":"1995","journal-title":"IEEE Photon. Technol. Lett."},{"issue":"10","key":"2026081811074033600_cit5","doi-asserted-by":"publisher","first-page":"1366","DOI":"10.1109\/LPT.2003.818246","article-title":"Fast and Low-Power\nThermooptic Switch on Thin Silicon-on-Insulator","volume":"15","author":"Espinola","year":"2003","journal-title":"IEEE Photon. Technol. Lett."},{"issue":"8","key":"2026081811074033600_cit6","doi-asserted-by":"publisher","first-page":"518","DOI":"10.1038\/nphoton.2010.179","article-title":"Silicon Optical\nModulators","volume":"4","author":"Reed","year":"2010","journal-title":"Nat. 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Appl. Phys."},{"issue":"7","key":"2026081811074033600_cit22","doi-asserted-by":"publisher","first-page":"070905","DOI":"10.35848\/1347-4065\/ac087d","article-title":"Linear Electro-Optic\nEffect in Ferroelectric HfO2 -Based Epitaxial Thin Films","volume":"60","author":"Kondo","year":"2021","journal-title":"Jpn. J. Appl. Phys."},{"issue":"11","key":"2026081811074033600_cit23","doi-asserted-by":"publisher","first-page":"9221180","DOI":"10.26599\/JAC.2025.9221180","article-title":"Unlocking the Electro\u2013Optic\nPotential of Ferroelectrics: Advanced\nDomain and Phase Manipulation","volume":"14","author":"Chen","year":"2025","journal-title":"J. Adv. 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Lightwave\nTechnol."},{"issue":"4","key":"2026081811074033600_cit28","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/JQE.2017.2718222","article-title":"$\\chi ^{(2)}$\nModulator With 40-GHz Modulation Utilizing\nBaTiO3 Photonic Crystal Waveguides","volume":"53","author":"Girouard","year":"2017","journal-title":"IEEE J.\nQuantum Electron."},{"issue":"12","key":"2026081811074033600_cit29","doi-asserted-by":"publisher","first-page":"4367","DOI":"10.1021\/acsphotonics.3c01144","article-title":"Monolithic Barium Titanate Modulators\non Silicon-on-Insulator\nSubstrates","volume":"10","author":"Dong","year":"2023","journal-title":"ACS Photonics"},{"issue":"6","key":"2026081811074033600_cit30","doi-asserted-by":"publisher","first-page":"868","DOI":"10.1038\/s41563-025-02158-1","article-title":"Barium Titanate\nand Lithium Niobate Permittivity and\nPockels Coefficients from Megahertz to Sub-Terahertz Frequencies","volume":"24","author":"Chelladurai","year":"2025","journal-title":"Nat. Mater."},{"issue":"19","key":"2026081811074033600_cit31","doi-asserted-by":"publisher","first-page":"1101","DOI":"10.1109\/LPT.2025.3582846","article-title":"Fabrication and Optical Characterization\nof Low-Loss Barium Titanate Waveguides","volume":"37","author":"Isti","year":"2025","journal-title":"IEEE\nPhoton. Technol. Lett."},{"key":"2026081811074033600_cit32","doi-asserted-by":"crossref","DOI":"10.23919\/OFC49934.2023.10116528","article-title":"Thin-Film BTO-Based Modulators\nEnabling 200 Gb\/s\nData Rates with Sub 1 Vpp Drive Signal","volume-title":"2023 Optical Fiber Communications Conference and Exhibition (OFC)\nProceedings","author":"Eltes","year":"2023"},{"issue":"1","key":"2026081811074033600_cit33","doi-asserted-by":"publisher","first-page":"399","DOI":"10.1038\/s41377-025-02116-1","article-title":"The Plasmonic\nBTO-on-SiN Platform \u2013 beyond 200 GBd Modulation for Optical\nCommunications","volume":"14","author":"Kohli","year":"2025","journal-title":"Light: Sci. Appl."},{"key":"2026081811074033600_cit34","doi-asserted-by":"crossref","DOI":"10.1364\/OFC.2023.Tu3C.2","article-title":"200 Gbit\/s Transmitter Based\non a Spin-on Ferroelectric\nWaveguide Modulator","volume-title":"Optical Fiber Communication\nConference (OFC) 2023 Technical Digest","author":"Yokoyama","year":"2023"},{"issue":"1","key":"2026081811074033600_cit35","doi-asserted-by":"publisher","first-page":"3444","DOI":"10.1038\/s41467-018-05846-6","article-title":"Nanophotonic Pockels Modulators on\na Silicon Nitride Platform","volume":"9","author":"Alexander","year":"2018","journal-title":"Nat. Commun."},{"issue":"24","key":"2026081811074033600_cit36","doi-asserted-by":"publisher","first-page":"13350","DOI":"10.1021\/acsami.5b01781","article-title":"Lanthanide-Assisted\nDeposition of Strongly Electro-Optic PZT Thin Films on Silicon: Toward\nIntegrated Active Nanophotonic Devices","volume":"7","author":"George","year":"2015","journal-title":"ACS\nAppl. Mater. 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Commun."},{"issue":"17","key":"2026081811074033600_cit39","doi-asserted-by":"publisher","first-page":"3855","DOI":"10.1515\/nanoph-2022-0141","article-title":"Polymer Modulators\nin Silicon Photonics: Review and Projections","volume":"11","author":"Taghavi","year":"2022","journal-title":"Nanophotonics"},{"issue":"10","key":"2026081811074033600_cit40","doi-asserted-by":"publisher","first-page":"107404","DOI":"10.1103\/PhysRevLett.117.107404","article-title":"Real and Imaginary\nProperties of Epsilon-Near-Zero\nMaterials","volume":"117","author":"Javani","year":"2016","journal-title":"Phys. Rev. Lett."},{"issue":"8","key":"2026081811074033600_cit41","doi-asserted-by":"publisher","first-page":"1023","DOI":"10.1063\/1.116919","article-title":"Pulsed Laser\nDeposition of SBN: 75\nThin Films with Electro-Optic Coefficient of 844 Pm\/V","volume":"69","author":"Tayebati","year":"1996","journal-title":"Appl. Phys. Lett."},{"key":"2026081811074033600_cit42","doi-asserted-by":"publisher","first-page":"397","DOI":"10.18494\/SAM.2017.1521","article-title":"Electrical\nProperties of Nanocrystalline\nStrontium Barium Niobate Thin Films Deposited at Room Temperature","volume":"29","author":"Hung","year":"2017","journal-title":"Sens. Mater."},{"issue":"1","key":"2026081811074033600_cit43","doi-asserted-by":"publisher","first-page":"230","DOI":"10.1080\/00150193.2012.671748","article-title":"The Pyroelectric\nProperties of SBN Crystals with Different Composition","volume":"426","author":"Malyshkina","year":"2012","journal-title":"Ferroelectrics"},{"key":"2026081811074033600_cit44","doi-asserted-by":"publisher","first-page":"247","DOI":"10.1016\/B978-0-444-88354-4.50011-5","article-title":"Ferroelectric\nTungsten-Bronze-Type Niobate Crystals","volume-title":"Ferroelectric Materials and their Applications","author":"Xu","year":"1991"},{"issue":"18","key":"2026081811074033600_cit45","doi-asserted-by":"publisher","first-page":"2990","DOI":"10.1063\/1.1572464","article-title":"Influence of MgO\nSubstrate Miscut\non Domain Structure of Pulsed Laser Deposited SrxBa1\u2013xNb2O6\nas Characterized by X-Ray Diffraction and Spectroscopic Ellipsometry","volume":"82","author":"Rouleau","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"2026081811074033600_cit46","doi-asserted-by":"publisher","first-page":"124300","DOI":"10.1016\/j.matchemphys.2021.124300","article-title":"Demonstration\nof Efficient SBN Thin\nFilm Based Miniaturized Mach Zehnder EO Modulator","volume":"262","author":"Gupta","year":"2021","journal-title":"Mater. Chem. Phys."},{"issue":"22","key":"2026081811074033600_cit47","doi-asserted-by":"publisher","first-page":"7283","DOI":"10.1007\/s10853-006-0951-5","article-title":"Growth of Highly\nOrientated Strontium Barium Niobate Thin Films on Si Substrates through\nthe Sol\u2013Gel Process Using a K: SBN Template Layer","volume":"41","author":"Ye","year":"2006","journal-title":"J. Mater. Sci."},{"issue":"16","key":"2026081811074033600_cit48","doi-asserted-by":"publisher","first-page":"2018","DOI":"10.1063\/1.112780","article-title":"Growth of\nEpitaxial Strontium Barium Niobate Thin Films by Pulsed Laser Deposition","volume":"65","author":"Schwyn Tho\u0308ny","year":"1994","journal-title":"Appl. Phys. Lett."},{"issue":"3","key":"2026081811074033600_cit49","doi-asserted-by":"publisher","first-page":"034103","DOI":"10.1063\/1.3463453","article-title":"Effect\nof Mobile Ions on Ultrathin\nSilicon-on-Insulator-Based Sensors","volume":"97","author":"Fernandes","year":"2010","journal-title":"Appl. Phys.\nLett."},{"issue":"12\u201313","key":"2026081811074033600_cit50","doi-asserted-by":"publisher","first-page":"2089","DOI":"10.1016\/j.surfcoat.2009.09.002","article-title":"Atomic-Scale Mechanisms for Diffusion\nof Impurities in Transition-Metal Nitrides","volume":"204","author":"Tsetseris","year":"2010","journal-title":"Surf. Coat. Technol."},{"key":"2026081811074033600_cit51","doi-asserted-by":"publisher","first-page":"114931","DOI":"10.1016\/j.optmat.2024.114931","article-title":"Design and\nFabrication of Indium Tin Oxide for High\nPerformance Electro-Optic Modulators at the Communication Wavelength","volume":"148","author":"Zheng","year":"2024","journal-title":"Opt. Mater."},{"issue":"8","key":"2026081811074033600_cit52","doi-asserted-by":"publisher","first-page":"1174","DOI":"10.1080\/01932691.2013.833480","article-title":"Extended Cauchy Model for Tunable Refractive Index\nof Titania Nanoparticles at Visible Region","volume":"35","author":"Nasirian","year":"2014","journal-title":"J. Dispersion Sci. Technol."},{"issue":"8","key":"2026081811074033600_cit53","doi-asserted-by":"publisher","first-page":"084504","DOI":"10.1063\/1.3245328","article-title":"Anisotropic\nOptical Constants of\nIn-Plane Oriented Polyfluorene Thin Films on Rubbed Substrate","volume":"106","author":"Zhu","year":"2009","journal-title":"J. Appl. Phys."},{"issue":"7","key":"2026081811074033600_cit54","doi-asserted-by":"publisher","first-page":"074103","DOI":"10.1063\/1.3232225","article-title":"Determination of Refractive\nIndices and Thicknesses of Ba0.7Sr0.3TiO3 Films with and without MgO\n(001) Buffer Layer on Silicon Substrate","volume":"106","author":"Yin","year":"2009","journal-title":"J.\nAppl. Phys."}],"container-title":["ACS Omega"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsomega.6c04548","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/11\/32\/48173\/66453708\/acsomega.6c04548.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/11\/32\/48173\/66453708\/acsomega.6c04548.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T17:51:24Z","timestamp":1787075484000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/acsodf\/article\/11\/32\/48173\/5249920\/Silicon-Based-Highly-c-Axis-Oriented-Strontium"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,7]]},"references-count":54,"journal-issue":{"issue":"32","published-online":{"date-parts":[[2026,8,7]]},"published-print":{"date-parts":[[2026,8,18]]}},"URL":"https:\/\/doi.org\/10.1021\/acsomega.6c04548","relation":{},"ISSN":["2470-1343"],"issn-type":[{"value":"2470-1343","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,7]]}}}