{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T12:13:00Z","timestamp":1788437580351,"version":"build-2803163510"},"reference-count":36,"publisher":"American Chemical Society (ACS)","issue":"34","license":[{"start":{"date-parts":[[2026,8,20]],"date-time":"2026-08-20T00:00:00Z","timestamp":1787184000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62304251"],"award-info":[{"award-number":["62304251"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["92573105"],"award-info":[{"award-number":["92573105"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004739","name":"Youth Innovation Promotion Association of the Chinese Academy of Sciences","doi-asserted-by":"publisher","award":["2022114"],"award-info":[{"award-number":["2022114"]}],"id":[{"id":"10.13039\/501100004739","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Silicon-based photonic integrated circuits (PICs) are the core hardware for advanced optoelectronic integration, yet silicon\u2019s indirect band gap limits the realization of high-performance on-chip light sources. Heterogeneous integration of direct band gap indium phosphide (InP) on Si thus provides a critical pathway to high-performance PIC with monolithically integrated light sources. However, the interfacial chemical mechanisms governing the strength and reliability of plasma-activated InP\/silicon-on-insulator (SOI) direct bonding remain poorly understood. In this work, we demonstrate that high-strength and high-reliability InP\/SOI bonding is dominated by two key interfacial factors: preservation of surface reactive hydroxyl groups and suppression of oxide-driven interfacial diffusion on InP. We elucidate how these processes determine bonding interface formation and failure via Water Contact Angle (WCA) measurements, molecular dynamics (MD) simulations, in situ X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). We find that Al2O3 outperforms SiO2 as the interlayer: stable Al\u2013OH formed after activation inhibits hydroxyl self-condensation and retains higher reactive hydroxyl density for interfacial bonding, while Si\u2013OH self-condensation on activated SiO2 depletes reactive hydroxyls and weakens heterogeneous bonding. We further show that N2 plasma activation forms a passivation layer on InP to suppress surface oxidation and interfacial interdiffusion, enabling smooth, high-quality bonding interfaces. In contrast, O2 plasma activation causes pronounced interfacial diffusion and brittle In2O3 formation, triggering interfacial embrittlement and reduced bonding strength. Guided by these mechanistic insights, we achieved a maximum bonding strength of 12.5 MPa. This work identifies the key interfacial chemical mechanisms of plasma-activated InP\/SOI bonding, providing a solid mechanistic foundation and a practical route for high-reliability heterogeneous integration in high-speed, low-power optical interconnects.<\/jats:p>","DOI":"10.1021\/acsomega.6c05801","type":"journal-article","created":{"date-parts":[[2026,8,20]],"date-time":"2026-08-20T18:01:34Z","timestamp":1787248894000},"page":"51635-51645","source":"Crossref","is-referenced-by-count":0,"title":["Mechanistic Study\nof Low-Temperature Plasma-Activated\nInP\/Al2O3\/SOI Direct Wafer Bonding for High\nBonding Energy"],"prefix":"10.1021","volume":"11","author":[{"given":"Cheng","family":"Peng","sequence":"first","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]},{"name":"School of Integrated Circuits, the University of Chinese Academy of Science , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yihao","family":"Meng","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]},{"name":"School of Integrated Circuits, the University of Chinese Academy of Science , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Siwei","family":"Sun","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Erni","family":"Shao","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150001"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiushi","family":"Kang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Renxi","family":"Jin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenxuan","family":"Ma","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]},{"name":"School of Integrated Circuits, the University of Chinese Academy of Science , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yetong","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]},{"name":"School of Integrated Circuits, the University of Chinese Academy of Science , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5007-3089","authenticated-orcid":true,"given":"Haiyun","family":"Xue","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Liqiang","family":"Cao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]},{"name":"School of Integrated Circuits, the University of Chinese Academy of Science , ,","place":["Beijing, China, 100049"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0576-1055","authenticated-orcid":true,"given":"Chenxi","family":"Wang","sequence":"additional","affiliation":[{"name":"Harbin Institute of Technology , , ,","place":["Harbin, China, 150001"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qidong","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuit , ,","place":["Beijing, China, 100020"]},{"name":"Institute of Microelectronics of Chinese Academy of Science , ,","place":["Beijing, China, 100020"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,20]]},"reference":[{"key":"2026090307170849200_cit1","unstructured":"Roozeboom, F.\n          \n          Moore\u2019s Law Sustained\nby Non-Lithographic Technologies, More than Moore; ECS Meeting; ECS, 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R.; Jeffrey, M. C.\n          Disintegrating\nManycores: Which Applications Lose and Why?; Proceedings\nof the 16th International Workshop on Network on Chip Architectures; ACM: Toronto ON Canada, 2023; pp 3\u2013810.1145\/3610396.3618090.","DOI":"10.1145\/3610396.3618090"},{"issue":"1","key":"2026090307170849200_cit3","doi-asserted-by":"publisher","first-page":"14","DOI":"10.1038\/s41928-017-0005-9","article-title":"Science and Research Policy at the\nEnd of Moore\u2019s Law","volume":"1","author":"Khan","year":"2018","journal-title":"Nat. Electron."},{"key":"2026090307170849200_cit4","doi-asserted-by":"publisher","DOI":"10.1016\/j.osn.2023.100730","article-title":"Flat Ball: Dynamic Topology for Energy Management of Optical Interconnection\nNetworks in Data Centers","volume":"48","author":"Rezaei","year":"2023","journal-title":"Opt. Switching and\nNetworking"},{"issue":"4","key":"2026090307170849200_cit5","doi-asserted-by":"publisher","first-page":"1027","DOI":"10.1021\/acsphotonics.2c01543","article-title":"Integrated Photonic\nComputing beyond the von Neumann\nArchitecture","volume":"10","author":"Xu","year":"2023","journal-title":"ACS Photonics"},{"key":"2026090307170849200_cit6","doi-asserted-by":"publisher","DOI":"10.3390\/photonics10030300","article-title":"Large-Scale Reconfigurable\nIntegrated Circuits for Wideband Analog Photonic Computing","volume":"10","author":"Yao","year":"2023","journal-title":"Photonics"},{"key":"2026090307170849200_cit7","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-022-35506-9","article-title":"Microcomb-Based Integrated\nPhotonic Processing Unit","volume":"14","author":"Bai","year":"2023","journal-title":"Nat. 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Quantum\nElectron."},{"key":"2026090307170849200_cit9","doi-asserted-by":"publisher","first-page":"167","DOI":"10.1515\/nanoph-2022-0575","article-title":"Ultra-wideband Integrated\nPhotonic Devices on Silicon Platform: From Visible to mid-IR","volume":"12","author":"Guo","year":"2023","journal-title":"Nanophotonics"},{"key":"2026090307170849200_cit10","doi-asserted-by":"publisher","first-page":"78","DOI":"10.1038\/s41586-023-06251-w","article-title":"3D Integration Enables Ultralow-Noise Isolator-Free\nLasers in Silicon Photonics","volume":"620","author":"Xiang","year":"2023","journal-title":"Nature"},{"key":"2026090307170849200_cit11","unstructured":"Noskov, A. I.; Kotlyar, A. B.; Katrivas, L.; Reveguk, Z.; Garcia, E. P.; Apkarian, A.; Galland, C.; Potma, E. O.; Fishman, D. A.\n          Overcoming\nthe Indirect Bandgap: Efficient Silicon Emission via Momentum- Expanded\nPhotonic States. arXiv:2507.19001. arXiv.org e-Printarchive. https:\/\/doi.org\/10.48550\/arXiv.2507.19001."},{"key":"2026090307170849200_cit12","doi-asserted-by":"publisher","DOI":"10.1002\/lpor.202300100","article-title":"Ultra-Low\nLoss SiN Edge Coupler for III-V\/SiN Hybrid\nIntegration","volume":"17","author":"He","year":"2023","journal-title":"Laser Photonics Rev."},{"issue":"1","key":"2026090307170849200_cit13","doi-asserted-by":"publisher","DOI":"10.1038\/s41377-023-01128-z","article-title":"Monolithic Integration of Embedded III-V Lasers on SOI","volume":"12","author":"Wei","year":"2023","journal-title":"Light Sci. 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Quantum Electron."},{"key":"2026090307170849200_cit16","doi-asserted-by":"publisher","DOI":"10.1063\/5.0219507","article-title":"Effective InAsP Dislocation Filtering Layers for InP\nHeteroepitaxy\non CMOS-Standard (001) Silicon","volume":"125","author":"Liu","year":"2024","journal-title":"Appl. Phys.\nLett."},{"key":"2026090307170849200_cit17","doi-asserted-by":"publisher","first-page":"1697","DOI":"10.1364\/OPTICA.569454","article-title":"Embedded Growth of Visible InP Quantum Dot Lasers in\nSilicon Nitride Photonic Integrated Circuits","volume":"12","author":"Wang","year":"2025","journal-title":"Optica"},{"key":"2026090307170849200_cit18","doi-asserted-by":"crossref","unstructured":"Jia, H.; Park, J.-S.; Zeng, H.; Yuan, J.; Li, J.; Wang, Y.; Liu, S.; Chen, C.; Dear, C.; Deng, H.; Martin, M.; Li, Q.; Baron, T.; Tang, M.; Seeds, A.; Liu, H.\n          Low Threshold InAs\/InP\nQuantum Dot Lasers on Si; IEEE Silicon Photonics Conference\n(SiPhotonics);IEEE, 2025.","DOI":"10.1109\/SiPhotonics64386.2025.10984482"},{"key":"2026090307170849200_cit19","doi-asserted-by":"publisher","DOI":"10.1016\/j.commatsci.2024.113061","article-title":"Si\/InP Direct Wafer\nBonding: A First-Principles Study","volume":"241","author":"Duan","year":"2024","journal-title":"Comput. 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Lightwave Technol."},{"key":"2026090307170849200_cit22","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2024.140399","article-title":"Adhesive-Free Bonding\nfor Hetero-Integration of InP Based Coupons Micro-Transfer Printed\non SiO2 into Complementary Metal-Oxide-Semiconductor Backend for Si\nPhotonics Application on 8\u2033 Wafer Platform","volume":"799","author":"Anand","year":"2024","journal-title":"Thin Solid Films"},{"key":"2026090307170849200_cit23","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfin.2025.108020","article-title":"Investigation\non the High Temperature Stability and Potential Barrier of Si\/Al2O3\/Si\nBonded by Surface Activated Bonding Technology","volume":"77","author":"Xing","year":"2025","journal-title":"Surf. Interfaces"},{"key":"2026090307170849200_cit24","doi-asserted-by":"publisher","first-page":"9417","DOI":"10.1021\/acs.jpcc.7b12552","article-title":"Insight into the Bonding\nof Silanols to Oxidized Aluminum Surfaces","volume":"122","author":"Poberz\u030cnik","year":"2018","journal-title":"J.\nPhys. Chem. C"},{"key":"2026090307170849200_cit25","doi-asserted-by":"publisher","first-page":"2545","DOI":"10.1021\/acsaelm.6c00018","article-title":"Room-Temperature High-Performance\nInP\/Si Surface-Activated Wafer\nBonding for Electronic-Photonic System Integration Applications","volume":"8","author":"Wu","year":"2026","journal-title":"ACS Appl. Electron. Mater."},{"issue":"1","key":"2026090307170849200_cit26","doi-asserted-by":"publisher","DOI":"10.1116\/6.0000661","article-title":"Practical\nGuide to the Use of Backgrounds in Quantitative XPS","volume":"39","author":"Tougaard","year":"2021","journal-title":"J. Vacuum Sci. Technol. 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Sci."},{"key":"2026090307170849200_cit32","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2025.109450","article-title":"Thermocompression Wafer-Level 3-Inch\nInP\/SiO2\/Si Heterobonding for Optoelectronic Integrations","volume":"192","author":"Kang","year":"2025","journal-title":"Mater. Sci. Semicond. Process."},{"key":"2026090307170849200_cit33","doi-asserted-by":"publisher","first-page":"166","DOI":"10.1016\/j.ijhydene.2024.03.225","article-title":"Construction of Z-Type\nIn2O3@InP Heterostructure with\nEnhanced Photo-Assisted Electrocatalytic Water Splitting for Hydrogen\nProduction","volume":"64","author":"Wang","year":"2024","journal-title":"Int. J. Hydrogen Energy"},{"issue":"18","key":"2026090307170849200_cit34","doi-asserted-by":"publisher","DOI":"10.1063\/1.4982904","article-title":"Modification\nof Al2O3\/InP Interfaces Using Sulfur and\nNitrogen Passivations","volume":"121","author":"Wang","year":"2017","journal-title":"J. Appl. Phys."},{"key":"2026090307170849200_cit35","doi-asserted-by":"publisher","DOI":"10.1063\/1.4982904","article-title":"Modification\nof Al2O3\/InP Interfaces Using Sulfur and\nNitrogen Passivations","volume":"121","author":"Wang","year":"2026","journal-title":"J. Appl. Phys."},{"key":"2026090307170849200_cit36","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2024.160614","article-title":"Wafer-Level\nInP-Si Covalent Bonding and Defect-Free Heterointerface for Photonic\nQuantum Systems","volume":"670","author":"Kang","year":"2024","journal-title":"Appl. Surf. Sci."}],"container-title":["ACS Omega"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsomega.6c05801","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/11\/34\/51635\/66913347\/acsomega.6c05801.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/acsodf\/article-pdf\/11\/34\/51635\/66913347\/acsomega.6c05801.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T11:17:14Z","timestamp":1788434234000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/acsodf\/article\/11\/34\/51635\/5278515\/Mechanistic-Study-of-Low-Temperature-Plasma"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,20]]},"references-count":36,"journal-issue":{"issue":"34","published-online":{"date-parts":[[2026,8,20]]},"published-print":{"date-parts":[[2026,9,1]]}},"URL":"https:\/\/doi.org\/10.1021\/acsomega.6c05801","relation":{},"ISSN":["2470-1343"],"issn-type":[{"value":"2470-1343","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,20]]}}}