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Epitaxial InGaAs layers were grown on semi-insulating InP wafers and functionalized with both sulfur and silicon using mercaptopropyltriethoxysilane and with tin using allyltributylstannane. The functionalized surfaces were characterized using X-ray photoelectron spectroscopy (XPS). The surfaces were capped and subjected to rapid thermal annealing to cause in-diffusion of dopant atoms. Dopant diffusion was monitored using secondary ion mass spectrometry. Raman scattering was utilized to nondestructively determine the presence of dopant atoms, prior to destructive analysis, by comparison to a blank undoped sample. Additionally, due to the As-dominant surface chemistry, the resistance of the functionalized surfaces to oxidation in ambient conditions over periods of 24 h and 1 week was elucidated using XPS by monitoring the As 3d core level for the presence of oxide components.<\/jats:p>","DOI":"10.1021\/acsomega.7b00204","type":"journal-article","created":{"date-parts":[[2017,5,1]],"date-time":"2017-05-01T12:53:22Z","timestamp":1493643202000},"page":"1750-1759","source":"Crossref","is-referenced-by-count":10,"title":["Liquid-Phase Monolayer Doping of InGaAs with Si-,\nS-, and Sn-Containing Organic Molecular Layers"],"prefix":"10.1021","volume":"2","author":[{"given":"John","family":"O\u2019Connell","sequence":"first","affiliation":[{"name":"University College Cork , , ,","place":["Cork, Ireland"]},{"name":"University College Cork , , ,","place":["Cork, Ireland"]},{"name":"Trinity College Dublin , , ,","place":["Dublin, Ireland, 2"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Enrico","family":"Napolitani","sequence":"additional","affiliation":[{"name":"Universita\u0300 di Padova , , Via Marzolo 8 , ,","place":["Padova, Italy, I-35131"]},{"name":"CNR-IMM , Via S. Sofia 64 , ,","place":["Catania, Italy, 95123"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Giuliana","family":"Impellizzeri","sequence":"additional","affiliation":[{"name":"CNR-IMM , Via S. 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