{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T23:36:53Z","timestamp":1740181013840,"version":"3.37.3"},"reference-count":47,"publisher":"American Chemical Society (ACS)","issue":"3","license":[{"start":{"date-parts":[[2024,2,21]],"date-time":"2024-02-21T00:00:00Z","timestamp":1708473600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,2,21]],"date-time":"2024-02-21T00:00:00Z","timestamp":1708473600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2024,2,21]],"date-time":"2024-02-21T00:00:00Z","timestamp":1708473600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100001871","name":"Funda??o para a Ci?ncia e a Tecnologia","doi-asserted-by":"publisher","award":["2022.05329.PTDC","PD\/BD\/143015\/2018","PTDC\/CTM-CTM\/28011\/2017","PTDC\/CTM-CTM\/3553\/2020","UID\/05367\/2020"],"award-info":[{"award-number":["2022.05329.PTDC","PD\/BD\/143015\/2018","PTDC\/CTM-CTM\/28011\/2017","PTDC\/CTM-CTM\/3553\/2020","UID\/05367\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100010662","name":"H2020 Excellent Science","doi-asserted-by":"publisher","award":["824096"],"award-info":[{"award-number":["824096"]}],"id":[{"id":"10.13039\/100010662","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["ACS Appl. Electron. Mater."],"published-print":{"date-parts":[[2024,3,26]]},"DOI":"10.1021\/acsaelm.3c01584","type":"journal-article","created":{"date-parts":[[2024,2,21]],"date-time":"2024-02-21T11:47:53Z","timestamp":1708516073000},"page":"1682-1692","source":"Crossref","is-referenced-by-count":1,"title":["Charge Collection Efficiency of Single GaN Core\u2013Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements"],"prefix":"10.1021","volume":"6","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7693-063X","authenticated-orcid":true,"given":"Dirkjan","family":"Verheij","sequence":"first","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores - Microssistemas e Nanotecnologia, Rua Alves Redol 9, 1000-029 Lisboa, Portugal"},{"name":"IPFN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"}]},{"given":"Milan","family":"Vi\u0107entijevi\u0107","sequence":"additional","affiliation":[{"name":"Laboratory for Ion Beam Interactions, Ruder Bo\u0161kovi\u0107 Institute, Bijeni\u010dka Cesta 54, 10000 Zagreb, Croatia"}]},{"given":"Milko","family":"Jak\u0161i\u0107","sequence":"additional","affiliation":[{"name":"Laboratory for Ion Beam Interactions, Ruder Bo\u0161kovi\u0107 Institute, Bijeni\u010dka Cesta 54, 10000 Zagreb, Croatia"}]},{"given":"Marco","family":"Peres","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores - Microssistemas e Nanotecnologia, Rua Alves Redol 9, 1000-029 Lisboa, Portugal"},{"name":"IPFN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"},{"name":"DECN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5369-5019","authenticated-orcid":true,"given":"Lu\u00eds Cerqueira","family":"Alves","sequence":"additional","affiliation":[{"name":"DECN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"},{"name":"C2TN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6913-6529","authenticated-orcid":true,"given":"Susana","family":"Cardoso","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores - Microssistemas e Nanotecnologia, Rua Alves Redol 9, 1000-029 Lisboa, Portugal"}]},{"given":"Eduardo","family":"Alves","sequence":"additional","affiliation":[{"name":"IPFN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"},{"name":"DECN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5012-8411","authenticated-orcid":true,"given":"Christophe","family":"Durand","sequence":"additional","affiliation":[{"name":"CEA, IRIG, PHELIGS, NPSC, Universit\u00e9 Grenoble Alpes, 17 Avenue des Martyrs, 38000 Grenoble, France"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4216-1166","authenticated-orcid":true,"given":"Jo\u00ebl","family":"Eymery","sequence":"additional","affiliation":[{"name":"CEA, IRIG, MEM, NRS, Universit\u00e9 Grenoble Alpes, 17 Avenue des Martyrs, 38000 Grenoble, France"}]},{"given":"Wolfhard","family":"M\u00f6ller","sequence":"additional","affiliation":[{"name":"Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstra\u00dfe 400, 01328 Dresden, Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5546-6922","authenticated-orcid":true,"given":"Katharina","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores - Microssistemas e Nanotecnologia, Rua Alves Redol 9, 1000-029 Lisboa, Portugal"},{"name":"IPFN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"},{"name":"DECN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal"}]}],"member":"316","published-online":{"date-parts":[[2024,2,21]]},"reference":[{"key":"ref1\/cit1","doi-asserted-by":"publisher","DOI":"10.1063\/1.111832"},{"key":"ref2\/cit2","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202102235"},{"key":"ref3\/cit3","doi-asserted-by":"publisher","DOI":"10.1016\/S0168-583X(02)01839-6"},{"key":"ref4\/cit4","doi-asserted-by":"crossref","unstructured":"Lorenz, K.; Peres, M.; Franco, N.; Marques, J. G.; Miranda, S. M. C.; Magalh\u00e3es, S.; Monteiro, T.; Wesch, W.; Alves, E.; Wendler, E. In  Radiation Damage Formation and Annealing in GaN and ZnO, Oxide-based Materials and Devices II, Vol. 7940, SPIE, 2011.","DOI":"10.1117\/12.879402"},{"key":"ref5\/cit5","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2037"},{"key":"ref6\/cit6","doi-asserted-by":"publisher","DOI":"10.1016\/j.physb.2021.413481"},{"key":"ref7\/cit7","doi-asserted-by":"publisher","DOI":"10.1016\/S0168-9002(03)01550-X"},{"key":"ref8\/cit8","doi-asserted-by":"publisher","DOI":"10.1016\/j.nima.2007.01.121"},{"key":"ref9\/cit9","doi-asserted-by":"publisher","DOI":"10.1063\/1.3261806"},{"key":"ref10\/cit10","doi-asserted-by":"publisher","DOI":"10.1116\/1.3690644"},{"key":"ref11\/cit11","doi-asserted-by":"publisher","DOI":"10.1016\/j.nima.2016.12.061"},{"key":"ref12\/cit12","doi-asserted-by":"publisher","DOI":"10.3390\/mi11050519"},{"key":"ref13\/cit13","doi-asserted-by":"publisher","DOI":"10.1063\/1.4929913"},{"key":"ref14\/cit14","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.55.05FJ02"},{"key":"ref15\/cit15","doi-asserted-by":"publisher","DOI":"10.1016\/j.nima.2011.09.003"},{"key":"ref16\/cit16","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2021.3097085"},{"key":"ref17\/cit17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3124919"},{"key":"ref18\/cit18","doi-asserted-by":"publisher","DOI":"10.1557\/jmr.2011.112"},{"key":"ref19\/cit19","doi-asserted-by":"publisher","DOI":"10.1063\/1.4870950"},{"key":"ref20\/cit20","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/26\/22\/225602"},{"key":"ref21\/cit21","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.5b06473"},{"key":"ref22\/cit22","doi-asserted-by":"publisher","DOI":"10.1021\/acsphotonics.8b00520"},{"key":"ref23\/cit23","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.9b19314"},{"key":"ref24\/cit24","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5b03857"},{"key":"ref25\/cit25","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.0c03775"},{"key":"ref26\/cit26","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.0c08765"},{"key":"ref27\/cit27","doi-asserted-by":"publisher","DOI":"10.1063\/1.5135960"},{"key":"ref28\/cit28","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-020-73977-2"},{"key":"ref29\/cit29","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/aab636"},{"key":"ref30\/cit30","doi-asserted-by":"publisher","DOI":"10.1063\/5.0045050"},{"key":"ref31\/cit31","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/21\/1\/015602"},{"key":"ref32\/cit32","doi-asserted-by":"publisher","DOI":"10.1063\/1.4799167"},{"key":"ref33\/cit33","unstructured":"Eymery, J.; Salomon, D.; Chen, X.; Durand, C. Process for Catalyst-Free Selective Growth on a Semiconductor Structure. US Patent, WO1366652012."},{"key":"ref34\/cit34","doi-asserted-by":"publisher","DOI":"10.1021\/cg500054w"},{"key":"ref35\/cit35","doi-asserted-by":"publisher","DOI":"10.1021\/nl5010493"},{"key":"ref36\/cit36","doi-asserted-by":"publisher","DOI":"10.1016\/j.nimb.2010.02.091"},{"key":"ref37\/cit37","doi-asserted-by":"publisher","DOI":"10.1016\/j.nimb.2019.05.047"},{"key":"ref38\/cit38","unstructured":"A250 Charge Sensitive Preamplifier \u2013\nAmptek \u2013 X-Ray\nDetectors and Electronics, 2023, www.amptek.com\/internal-products\/a250-charge-sensitive-preamplifier (accessed by 28 July, 2023)."},{"key":"ref39\/cit39","doi-asserted-by":"publisher","DOI":"10.1016\/j.nimb.2013.12.027"},{"key":"ref40\/cit40","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/27\/17\/175301"},{"key":"ref41\/cit41","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpcc.8b12014"},{"key":"ref42\/cit42","doi-asserted-by":"publisher","DOI":"10.1149\/2.0251602jss"},{"key":"ref43\/cit43","doi-asserted-by":"publisher","DOI":"10.1063\/1.3559000"},{"key":"ref44\/cit44","doi-asserted-by":"publisher","DOI":"10.1088\/1748-0221\/8\/09\/P09003"},{"key":"ref45\/cit45","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/25\/25\/255201"},{"key":"ref46\/cit46","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6560\/aba163"},{"key":"ref47\/cit47","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6560\/abf811"}],"container-title":["ACS Applied Electronic Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsaelm.3c01584","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acsaelm.3c01584","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,3,26]],"date-time":"2024-03-26T09:59:35Z","timestamp":1711447175000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/doi\/10.1021\/acsaelm.3c01584"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,2,21]]},"references-count":47,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2024,3,26]]}},"alternative-id":["10.1021\/acsaelm.3c01584"],"URL":"https:\/\/doi.org\/10.1021\/acsaelm.3c01584","relation":{},"ISSN":["2637-6113","2637-6113"],"issn-type":[{"type":"print","value":"2637-6113"},{"type":"electronic","value":"2637-6113"}],"subject":[],"published":{"date-parts":[[2024,2,21]]}}}