{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,21]],"date-time":"2026-05-21T19:04:30Z","timestamp":1779390270691,"version":"3.53.1"},"reference-count":73,"publisher":"Springer Science and Business Media LLC","issue":"7737","license":[{"start":{"date-parts":[[2018,12,3]],"date-time":"2018-12-03T00:00:00Z","timestamp":1543795200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Nature"],"published-print":{"date-parts":[[2019,1]]},"DOI":"10.1038\/s41586-018-0770-2","type":"journal-article","created":{"date-parts":[[2018,11,29]],"date-time":"2018-11-29T07:27:32Z","timestamp":1543476452000},"page":"35-42","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":725,"title":["Scalable energy-efficient magnetoelectric spin\u2013orbit logic"],"prefix":"10.1038","volume":"565","author":[{"given":"Sasikanth","family":"Manipatruni","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dmitri E.","family":"Nikonov","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chia-Ching","family":"Lin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tanay A.","family":"Gosavi","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Huichu","family":"Liu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bhagwati","family":"Prasad","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yen-Lin","family":"Huang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Everton","family":"Bonturim","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ramamoorthy","family":"Ramesh","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ian A.","family":"Young","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2018,12,3]]},"reference":[{"key":"770_CR1","doi-asserted-by":"publisher","first-page":"1813","DOI":"10.1109\/TED.2012.2193129","volume":"59","author":"KJ Kuhn","year":"2012","unstructured":"Kuhn, K. J. Considerations for ultimate CMOS scaling. IEEE Trans. Electron Dev. 59, 1813\u20131828 (2012).","journal-title":"IEEE Trans. Electron Dev."},{"key":"770_CR2","doi-asserted-by":"publisher","first-page":"310","DOI":"10.1038\/nature10676","volume":"479","author":"I Ferain","year":"2011","unstructured":"Ferain, I., Colinge, C. A. & Colinge, J.-P. Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. Nature 479, 310\u2013316 (2011).","journal-title":"Nature"},{"key":"770_CR3","doi-asserted-by":"crossref","unstructured":"Auth, C. et al. A 10 nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, self-aligned quad patterning, contact over active gate and cobalt local interconnects. In Electron Devices Meeting 2017, 29.1.1\u201329.1.4 (IEEE, 2017).","DOI":"10.1109\/IEDM.2017.8268472"},{"key":"770_CR4","doi-asserted-by":"publisher","first-page":"82","DOI":"10.1109\/JPROC.1998.658762","volume":"86","author":"GE Moore","year":"1998","unstructured":"Moore, G. E. Cramming more components onto integrated circuits. Proc. IEEE 86, 82\u201385 (1998).","journal-title":"Proc. IEEE"},{"key":"770_CR5","doi-asserted-by":"publisher","first-page":"256","DOI":"10.1109\/JSSC.1974.1050511","volume":"9","author":"RH Dennard","year":"1974","unstructured":"Dennard, R. H., Gaensslen, F. H., Yu, H. N., Rideout, V. L., Bassous, E. & Leblanc, A. R. Design of ion-implanted MOSFET\u2019s with very small physical dimensions. IEEE J. Solid St. Circ. 9, 256\u2013268 (1974).","journal-title":"IEEE J. Solid St. Circ."},{"key":"770_CR6","doi-asserted-by":"crossref","unstructured":"Ghani, T. et al. A 90 nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors. In Electron Devices Meeting 2003, 11.6.1\u201311.6.3 (IEEE, 2003).","DOI":"10.1109\/IEDM.2003.1269442"},{"key":"770_CR7","doi-asserted-by":"crossref","unstructured":"Krishnamohan, T. et al. Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: mobility enhancement, drive current, delay and off-state leakage. In Electron Devices Meeting 2008, 1\u20134 (IEEE, 2008).","DOI":"10.1109\/IEDM.2008.4796845"},{"key":"770_CR8","unstructured":"Huang, X. et al. Sub 50-nm FinFET: PMOS. In Electron Devices Meeting 1998, 67\u201370 (IEEE, 1999)."},{"key":"770_CR9","doi-asserted-by":"publisher","first-page":"99","DOI":"10.1002\/cvde.200500027","volume":"12","author":"M Schumacher","year":"2006","unstructured":"Schumacher, M., Baumann, P. K. & Seidel, T. AVD and ALD as two complementary technology solutions for next generation dielectric and conductive thin-film processing. Chem. Vap. Depos. 12, 99\u2013108 (2006).","journal-title":"Chem. Vap. Depos."},{"key":"770_CR10","doi-asserted-by":"crossref","unstructured":"Horowitz, M. Computing's energy problem (and what we can do about it). In Solid-State Circuits Conference Digest of Technical Papers 2014 10\u201314 (IEEE, 2014).","DOI":"10.1109\/ISSCC.2014.6757323"},{"key":"770_CR11","doi-asserted-by":"publisher","first-page":"1600","DOI":"10.1126\/science.1187597","volume":"327","author":"TN Theis","year":"2010","unstructured":"Theis, T. N. & Solomon, P. M. It\u2019s time to reinvent the transistor! Science 327, 1600\u20131601 (2010).","journal-title":"Science"},{"key":"770_CR12","doi-asserted-by":"publisher","first-page":"3","DOI":"10.1109\/JXCDC.2015.2418033","volume":"1","author":"DE Nikonov","year":"2015","unstructured":"Nikonov, D. E. & Young, I. A., Benchmarking of beyond-CMOS exploratory devices for logic integrated circuits. IEEE J. Explor. Solid-State Computat. Devices Circuits 1, 3\u201311 (2015).","journal-title":"IEEE J. Explor. Solid-State Computat. Devices Circuits"},{"key":"770_CR13","doi-asserted-by":"publisher","first-page":"338","DOI":"10.1038\/s41567-018-0101-4","volume":"14","author":"S Manipatruni","year":"2018","unstructured":"Manipatruni, S., Nikonov, D. E. & Young, I. A. Beyond CMOS computing with spin and polarization. Nat. Phys. 14, 338 (2018).","journal-title":"Nat. Phys."},{"key":"770_CR14","doi-asserted-by":"crossref","unstructured":"Zografos, O. et al. Design and benchmarking of hybrid CMOS-spin wave device circuits compared to 10 nm CMOS. In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 686\u2013689 (IEEE, 2015).","DOI":"10.1109\/NANO.2015.7388699"},{"key":"770_CR15","doi-asserted-by":"publisher","first-page":"32","DOI":"10.1109\/MM.2015.88","volume":"35","author":"K Ma","year":"2015","unstructured":"Ma, K. et al. Nonvolatile processor architecture exploration for energy-harvesting applications. IEEE Micro 35, 32\u201340 (2015).","journal-title":"IEEE Micro"},{"key":"770_CR16","doi-asserted-by":"publisher","first-page":"1629","DOI":"10.1109\/5.58356","volume":"78","author":"C Mead","year":"1990","unstructured":"Mead, C. Neuromorphic electronic systems. Proc. IEEE 78, 1629\u20131636 (1990).","journal-title":"Proc. IEEE"},{"key":"770_CR17","unstructured":"Patil, A. D., Manipatruni, S., Nikonov, D., Young, I. A. & Shanbhag, N. R. 2017. Shannon-inspired statistical computing to enable spintronics. Preprint at https:\/\/arxiv.org\/abs\/1702.06119 (2017)."},{"key":"770_CR18","doi-asserted-by":"publisher","first-page":"459","DOI":"10.1016\/0375-9601(71)90196-4","volume":"35","author":"MI Dyakonov","year":"1971","unstructured":"Dyakonov, M. I. & Perel, V. I. Current-induced spin orientation of electrons in semiconductors. Phys. Lett. A 35, 459 (1971).","journal-title":"Phys. Lett. A"},{"key":"770_CR19","doi-asserted-by":"publisher","first-page":"233","DOI":"10.1016\/0038-1098(90)90963-C","volume":"73","author":"VM Edelstein","year":"1990","unstructured":"Edelstein, V. M. Spin polarization of conduction electrons induced by electric current in two-dimensional asymmetric electron systems. Solid State Commun. 73, 233\u2013235 (1990).","journal-title":"Solid State Commun."},{"key":"770_CR20","doi-asserted-by":"publisher","first-page":"509","DOI":"10.1038\/nature19820","volume":"539","author":"A Soumyanarayanan","year":"2016","unstructured":"Soumyanarayanan, A., Reyren, N., Fert, A. & Panagopoulos, C. Emergent phenomena induced by spin\u2013orbit coupling at surfaces and interfaces. Nature 539, 509 (2016).","journal-title":"Nature"},{"key":"770_CR21","doi-asserted-by":"publisher","first-page":"1101","DOI":"10.1038\/nature08234","volume":"460","author":"D Hsieh","year":"2009","unstructured":"Hsieh, D. et al. A tunable topological insulator in the spin helical Dirac transport regime. Nature 460, 1101 (2009).","journal-title":"Nature"},{"key":"770_CR22","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms3944","volume":"4","author":"JC Rojas S\u00e1nchez","year":"2013","unstructured":"Rojas S\u00e1nchez, J. C. et al. Spin-to-charge conversion using Rashba coupling at the interface between non-magnetic materials. Nat. Commun. 4, 2944 (2013).","journal-title":"Nat. Commun."},{"key":"770_CR23","doi-asserted-by":"publisher","first-page":"096601","DOI":"10.1103\/PhysRevLett.112.096601","volume":"112","author":"K Shen","year":"2014","unstructured":"Shen, K., Vignale, G. & Raimondi, R. Microscopic theory of the inverse Edelstein effect. Phys. Rev. Lett. 112, 096601 (2014).","journal-title":"Phys. Rev. Lett."},{"key":"770_CR24","doi-asserted-by":"publisher","first-page":"196601","DOI":"10.1103\/PhysRevLett.113.196601","volume":"113","author":"Y Shiomi","year":"2014","unstructured":"Shiomi, Y. et al. Spin\u2013electricity conversion induced by spin injection into topological insulators. Phys. Rev. Lett. 113, 196601 (2014).","journal-title":"Phys. Rev. Lett."},{"key":"770_CR25","doi-asserted-by":"publisher","first-page":"322","DOI":"10.1038\/s41567-018-0112-1","volume":"14","author":"J Varignon","year":"2018","unstructured":"Varignon, J., Vila, L., Barthelemy, A. & Bibes, M. A new spin for oxide interfaces. Nat. Phys. 14, 322 (2018).","journal-title":"Nat. Phys."},{"key":"770_CR26","doi-asserted-by":"publisher","first-page":"391","DOI":"10.1126\/science.1113357","volume":"309","author":"NA Spaldin","year":"2005","unstructured":"Spaldin, N. A. & Fiebig, M. The renaissance of magnetoelectric multiferroics. Science 309, 391\u2013392 (2005).","journal-title":"Science"},{"key":"770_CR27","doi-asserted-by":"publisher","first-page":"370","DOI":"10.1038\/nature14004","volume":"516","author":"JT Heron","year":"2014","unstructured":"Heron, J. T. et al. Deterministic switching of ferromagnetism at room temperature using an electric field. Nature 516, 370\u2013373 (2014).","journal-title":"Nature"},{"key":"770_CR28","doi-asserted-by":"publisher","first-page":"345","DOI":"10.1038\/nmat3870","volume":"13","author":"RO Cherifi","year":"2014","unstructured":"Cherifi, R. O. et al. Electric-field control of magnetic order above room temperature. Nat. Mater. 13, 345\u2013351 (2014).","journal-title":"Nat. Mater."},{"key":"770_CR29","doi-asserted-by":"publisher","first-page":"579","DOI":"10.1038\/nmat2785","volume":"9","author":"X He","year":"2010","unstructured":"He, X. et al. Robust isothermal electric control of exchange bias at room temperature. Nat. Mater. 9, 579\u2013585 (2010).","journal-title":"Nat. Mater."},{"key":"770_CR30","doi-asserted-by":"crossref","unstructured":"Manipatruni, S. et al. Voltage control of uni-directional anisotropy in ferromagnet\u2013multiferroic system. Preprint at https:\/\/arxiv.org\/abs\/1801.08280 (2018).","DOI":"10.1126\/sciadv.aat4229"},{"key":"770_CR31","doi-asserted-by":"publisher","first-page":"157","DOI":"10.1016\/j.physrep.2006.01.001","volume":"427","author":"A Brataas","year":"2006","unstructured":"Brataas, A., Bauer, G. E. & Kelly, P. J. Non-collinear magnetoelectronics. Phys. Rep. 427, 157\u2013255 (2006).","journal-title":"Phys. Rep."},{"key":"770_CR32","doi-asserted-by":"publisher","first-page":"2801","DOI":"10.1109\/TCSI.2012.2206465","volume":"59","author":"S Manipatruni","year":"2012","unstructured":"Manipatruni, S., Nikonov, D. E. & Young, I. A. Modeling and design of spintronic integrated circuits. IEEE Trans. Circuits Syst. 59, 2801\u20132814 (2012).","journal-title":"IEEE Trans. Circuits Syst."},{"key":"770_CR33","doi-asserted-by":"publisher","first-page":"242415","DOI":"10.1063\/1.4884520","volume":"104","author":"Y Omori","year":"2014","unstructured":"Omori, Y. et al. Inverse spin Hall effect in a closed loop circuit. Appl. Phys. Lett. 104, 242415 (2014).","journal-title":"Appl. Phys. Lett."},{"key":"770_CR34","doi-asserted-by":"publisher","first-page":"699","DOI":"10.1038\/nmat3973","volume":"13","author":"Y Fan","year":"2014","unstructured":"Fan, Y. et al. Magnetization switching through giant spin\u2013orbit torque in a magnetically doped topological insulator heterostructure. Nat. Mater. 13, 699 (2014).","journal-title":"Nat. Mater."},{"key":"770_CR35","unstructured":"Mahendra, D. C. et al. Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1\u2212x) topological insulator material. Preprint at https:\/\/arxiv.org\/abs\/1703.03822 (2017)."},{"key":"770_CR36","doi-asserted-by":"publisher","first-page":"1261","DOI":"10.1038\/nmat4726","volume":"15","author":"E Lesne","year":"2016","unstructured":"Lesne, E. et al. Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces. Nat. Mater. 15, 1261\u20131266 (2016).","journal-title":"Nat. Mater."},{"key":"770_CR37","doi-asserted-by":"publisher","first-page":"186807","DOI":"10.1103\/PhysRevLett.98.186807","volume":"98","author":"CR Ast","year":"2007","unstructured":"Ast, C. R. et al. Giant spin splitting through surface alloying. Phys. Rev. Lett. 98, 186807 (2007).","journal-title":"Phys. Rev. Lett."},{"key":"770_CR38","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-018-04014-0","volume":"9","author":"MJ Veit","year":"2018","unstructured":"Veit, M. J., Arras, R., Ramshaw, B. J., Pentcheva, R. & Suzuki, Y. Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO3\/SrTiO3 heterostructures. Nat. Commun. 9, 1458 (2018).","journal-title":"Nat. Commun."},{"key":"770_CR39","doi-asserted-by":"publisher","first-page":"2044","DOI":"10.1126\/science.293.5537.2044","volume":"293","author":"JD Meindl","year":"2001","unstructured":"Meindl, J. D., Chen, Q. & Davis, J. A. Limits on silicon nanoelectronics for terascale integration. Science 293, 2044\u20132049 (2001).","journal-title":"Science"},{"key":"770_CR40","doi-asserted-by":"publisher","first-page":"8200109","DOI":"10.1109\/JSTQE.2013.2239262","volume":"19","author":"S Manipatruni","year":"2013","unstructured":"Manipatruni, S., Lipson, M. & Young, I. A. Device scaling considerations for nanophotonic CMOS global interconnects. IEEE J. Sel. Topics Quantum Electron. 19, 8200109 (2013).","journal-title":"IEEE J. Sel. Topics Quantum Electron."},{"key":"770_CR41","doi-asserted-by":"publisher","first-page":"345","DOI":"10.1063\/1.1652680","volume":"14","author":"AF Mayadas","year":"1969","unstructured":"Mayadas, A. F., Shatzkes, M. & Janak, J. F. Electrical resistivity model for polycrystalline films: the case of specular reflection at external surfaces. Appl. Phys. Lett. 14, 345\u2013347 (1969).","journal-title":"Appl. Phys. Lett."},{"key":"770_CR42","doi-asserted-by":"publisher","first-page":"102909","DOI":"10.1063\/1.2897304","volume":"92","author":"YH Chu","year":"2008","unstructured":"Chu, Y. H. et al. Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution. Appl. Phys. Lett. 92, 102909 (2008).","journal-title":"Appl. Phys. Lett."},{"key":"770_CR43","doi-asserted-by":"publisher","first-page":"633","DOI":"10.1109\/T-ED.1987.22974","volume":"34","author":"DS Gardner","year":"1987","unstructured":"Gardner, D. S., Meindl, J. D. & Saraswat, K. C. Interconnection and electro migration scaling theory. IEEE Trans. Electron Dev. 34, 633\u2013643 (1987).","journal-title":"IEEE Trans. Electron Dev."},{"key":"770_CR44","doi-asserted-by":"crossref","unstructured":"Karube, S., Kondou, K. & Otani, Y. 2016. Experimental observation of spin to charge current conversion at non-magnetic metal\/Bi2O3 interfaces. Preprint at https:\/\/arxiv.org\/abs\/1601.04292 (2016).","DOI":"10.7567\/APEX.9.033001"},{"key":"770_CR45","doi-asserted-by":"publisher","first-page":"376","DOI":"10.1038\/nphys1606","volume":"6","author":"D Pesin","year":"2010","unstructured":"Pesin, D. & Balents, L. Mott physics and band topology in materials with strong spin\u2013orbit interaction. Nat. Phys. 6, 376 (2010).","journal-title":"Nat. Phys."},{"key":"770_CR46","doi-asserted-by":"publisher","first-page":"096602","DOI":"10.1103\/PhysRevLett.116.096602","volume":"116","author":"J-C Rojas-S\u00e1nchez","year":"2016","unstructured":"Rojas-S\u00e1nchez, J.-C. et al. Spin to charge conversion at room temperature by spin pumping into a new type of topological insulator: \u03b1-Sn films. Phys. Rev. Lett. 116, 096602 (2016).","journal-title":"Phys. Rev. Lett."},{"key":"770_CR47","doi-asserted-by":"publisher","first-page":"808","DOI":"10.1038\/s41563-018-0137-y","volume":"17","author":"NHD Khang","year":"2018","unstructured":"Khang, N. H. D., Ueda, Y. & Hai, P. N. A conductive topological insulator with large spin Hall effect for ultralow power spin\u2013orbit torque switching. Nat. Mater. 17, 808\u2013813 (2018).","journal-title":"Nat. Mater."},{"key":"770_CR48","unstructured":"Cheng, C. et al. Direct observation of spin-to-charge conversion in MoS2 monolayer with spin pumping. Preprint at https:\/\/arxiv.org\/abs\/1510.03451 (2015)."},{"key":"770_CR49","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms10110","volume":"6","author":"G Wang","year":"2015","unstructured":"Wang, G. et al. Spin\u2013orbit engineering in transition metal dichalcogenide alloy monolayers. Nat. Commun. 6, 10110 (2015).","journal-title":"Nat. Commun."},{"key":"770_CR50","doi-asserted-by":"publisher","first-page":"55","DOI":"10.1038\/nature02018","volume":"426","author":"T Kimura","year":"2003","unstructured":"Kimura, T., Goto, T., Shintani, H., Ishizaka, K., Arima, T. & Tokura, Y. Magnetic control of ferroelectric polarization. Nature 426, 55\u201358 (2003).","journal-title":"Nature"},{"key":"770_CR51","doi-asserted-by":"publisher","first-page":"523","DOI":"10.1038\/nature19343","volume":"537","author":"JA Mundy","year":"2016","unstructured":"Mundy, J. A. et al. Atomically engineered ferroic layers yield a room-temperature magnetoelectric multiferroic. Nature 537, 523 (2016).","journal-title":"Nature"},{"key":"770_CR52","doi-asserted-by":"publisher","first-page":"5680","DOI":"10.1063\/1.1412840","volume":"90","author":"N Srisukhumbowornchai","year":"2001","unstructured":"Srisukhumbowornchai, N. & Guruswamy, S. Large magnetostriction in directionally solidified FeGa and FeGaAl alloys. J. Appl. Phys. 90, 5680\u20135688 (2001).","journal-title":"J. Appl. Phys."},{"key":"770_CR53","doi-asserted-by":"publisher","first-page":"4948","DOI":"10.1143\/JJAP.40.4948","volume":"40","author":"J Ryu","year":"2001","unstructured":"Ryu, J., et al. Magnetoelectric properties in piezoelectric and magnetostrictive laminate composites. Jpn J. Appl. Phys. 40, 4948 \u20134951 (2001).","journal-title":"Jpn J. Appl. Phys."},{"key":"770_CR54","doi-asserted-by":"publisher","first-page":"222402","DOI":"10.1063\/1.4880938","volume":"104","author":"M Street","year":"2014","unstructured":"Street, M. et al. Increasing the N\u00e9el temperature of magnetoelectric chromia for voltage-controlled spintronics. Appl. Phys. Lett. 104, 222402 (2014).","journal-title":"Appl. Phys. Lett."},{"key":"770_CR55","doi-asserted-by":"publisher","first-page":"055012","DOI":"10.1088\/0953-8984\/26\/5\/055012","volume":"26","author":"J Wang","year":"2014","unstructured":"Wang, J. et al. Magnetoelectric Fe2TeO6 thin films. J. Phys. Condens. Matter 26, 055012 (2014).","journal-title":"J. Phys. Condens. Matter"},{"key":"770_CR56","doi-asserted-by":"publisher","first-page":"266","DOI":"10.1038\/nnano.2010.31","volume":"5","author":"B Behin-Aein","year":"2010","unstructured":"Behin-Aein, B., Datta, D., Salahuddin, S. & Datta, S. Proposal for an all-spin logic device with built-in memory. Nat. Nanotechnol. 5, 266\u2013270 (2010).","journal-title":"Nat. Nanotechnol."},{"key":"770_CR57","doi-asserted-by":"publisher","first-page":"1128","DOI":"10.1109\/LED.2011.2156379","volume":"32","author":"DE Nikonov","year":"2011","unstructured":"Nikonov, D. E., Bourianoff, G. I. & Ghani, T. Proposal of a spin torque majority gate logic. IEEE Electron Device Lett. 32, 1128\u20131130 (2011).","journal-title":"IEEE Electron Device Lett."},{"key":"770_CR58","doi-asserted-by":"publisher","first-page":"014002","DOI":"10.1103\/PhysRevApplied.5.014002","volume":"5","author":"S Manipatruni","year":"2016","unstructured":"Manipatruni, S., Nikonov, D. E. & Young, I. A. Material targets for scaling all-spin logic. Phys. Rev. Appl. 5, 014002 (2016).","journal-title":"Phys. Rev. Appl."},{"key":"770_CR59","doi-asserted-by":"publisher","first-page":"205","DOI":"10.1126\/science.1120506","volume":"311","author":"A Imre","year":"2006","unstructured":"Imre, A. et al. Majority logic gate for magnetic quantum-dot cellular automata. Science 311, 205\u2013208 (2006).","journal-title":"Science"},{"key":"770_CR60","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms5700","volume":"5","author":"AV Chumak","year":"2014","unstructured":"Chumak, A. V., Serga, A. A. & Hillebrands, B. Magnon transistor for all-magnon data processing. Nat. Commun. 5, 4700 (2014).","journal-title":"Nat. Commun."},{"key":"770_CR61","doi-asserted-by":"publisher","first-page":"329","DOI":"10.1038\/nature10679","volume":"479","author":"AM Ionescu","year":"2011","unstructured":"Ionescu, A. M. & Riel, H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479, 329\u2013337 (2011).","journal-title":"Nature"},{"key":"770_CR62","doi-asserted-by":"publisher","first-page":"44","DOI":"10.1109\/JEDS.2014.2326622","volume":"2","author":"H Lu","year":"2014","unstructured":"Lu, H. & Seabaugh, A. Tunnel field-effect transistors: state-of-the-art. IEEE J. Electron Devices Soc. 2, 44\u201349 (2014).","journal-title":"IEEE J. Electron Devices Soc."},{"key":"770_CR63","doi-asserted-by":"publisher","first-page":"405","DOI":"10.1021\/nl071804g","volume":"8","author":"S Salahuddin","year":"2008","unstructured":"Salahuddin, S. & Datta, S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett. 8, 405\u2013410 (2008).","journal-title":"Nano Lett."},{"key":"770_CR64","doi-asserted-by":"publisher","first-page":"084509","DOI":"10.1063\/1.4704391","volume":"111","author":"D Newns","year":"2012","unstructured":"Newns, D., Elmegreen, B., Liu, X. H. & Martyna, G. A low-voltage high-speed electronic switch based on piezoelectric transduction. J. Appl. Phys. 111, 084509 (2012).","journal-title":"J. Appl. Phys."},{"key":"770_CR65","doi-asserted-by":"publisher","first-page":"084503","DOI":"10.1063\/1.3651612","volume":"110","author":"J Son","year":"2011","unstructured":"Son, J., Rajan, S., Stemmer, S. & Allen, S. J. A heterojunction modulation-doped Mott transistor. J. Appl. Phys. 110, 084503 (2011).","journal-title":"J. Appl. Phys."},{"key":"770_CR66","doi-asserted-by":"crossref","unstructured":"Srinivasan, S., Diep, V., Behin-Aein, B., Sarkar, A. & Datta, S. Modeling multi-magnet networks interacting via spin currents. In Handbook of Spintronics 1281\u20131335 (2016).","DOI":"10.1007\/978-94-007-6892-5_46"},{"key":"770_CR67","doi-asserted-by":"publisher","first-page":"180405","DOI":"10.1103\/PhysRevB.72.180405","volume":"72","author":"DM Apalkov","year":"2005","unstructured":"Apalkov, D. M. & Visscher, P. B. Spin-torque switching: Fokker\u2013Planck rate calculation. Phys. Rev. B 72, 180405 (2005).","journal-title":"Phys. Rev. B"},{"key":"770_CR68","doi-asserted-by":"publisher","first-page":"4684","DOI":"10.1109\/TMAG.2012.2209122","volume":"48","author":"WH Butler","year":"2012","unstructured":"Butler, W. H. et al. Switching distributions for perpendicular spin-torque devices within the macrospin approximation. IEEE Trans. Magnet. 48, 4684\u20134700 (2012).","journal-title":"IEEE Trans. Magnet."},{"key":"770_CR69","first-page":"157","volume":"34","author":"CE Shannon","year":"1957","unstructured":"Shannon, C. E. A universal Turing machine with two internal states. Automata Stud. 34, 157\u2013165 (1957).","journal-title":"Automata studies"},{"key":"770_CR70","doi-asserted-by":"crossref","unstructured":"Amar\u00f9, L. et al. Majority logic synthesis. In Proc. International Conference on Computer-Aided Design 79 (ACM, 2018).","DOI":"10.1145\/3240765.3267501"},{"key":"770_CR71","doi-asserted-by":"publisher","first-page":"063503","DOI":"10.1063\/1.4810904","volume":"103","author":"S Manipatruni","year":"2013","unstructured":"Manipatruni, S., Nikonov, D. E. & Young, I. A. All-spin nanomagnetic state elements. Appl. Phys. Lett. 103, 063503 (2013).","journal-title":"Appl. Phys. Lett."},{"key":"770_CR72","doi-asserted-by":"publisher","first-page":"949","DOI":"10.1109\/LED.2017.2709248","volume":"38","author":"S Dutta","year":"2017","unstructured":"Dutta, S. et al. Highly scaled ruthenium interconnects. IEEE Electron Dev. Lett. 38, 949\u2013951 (2017).","journal-title":"IEEE Electron Dev. Lett."},{"key":"770_CR73","doi-asserted-by":"publisher","first-page":"731","DOI":"10.1109\/LED.2018.2821923","volume":"39","author":"S Dutta","year":"2018","unstructured":"Dutta, S. et al. Sub-100 nm2 cobalt interconnects. IEEE Electron Dev. Lett. 39, 731\u2013734 (2018).","journal-title":"IEEE Electron Dev. Lett."}],"container-title":["Nature"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/www.nature.com\/articles\/s41586-018-0770-2","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/www.nature.com\/articles\/s41586-018-0770-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/www.nature.com\/articles\/s41586-018-0770-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,4,4]],"date-time":"2026-04-04T07:11:04Z","timestamp":1775286664000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41586-018-0770-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,12,3]]},"references-count":73,"journal-issue":{"issue":"7737","published-print":{"date-parts":[[2019,1]]}},"alternative-id":["770"],"URL":"https:\/\/doi.org\/10.1038\/s41586-018-0770-2","relation":{},"ISSN":["0028-0836","1476-4687"],"issn-type":[{"value":"0028-0836","type":"print"},{"value":"1476-4687","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,12,3]]},"assertion":[{"value":"24 April 2016","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"7 October 2018","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"3 December 2018","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}]}}