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Here we report ultra-clean 10 to 100\u2009nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an <jats:italic>n<\/jats:italic>-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (<jats:italic>e<\/jats:italic>\u2212<jats:italic>h<\/jats:italic> charging energy asymmetry). We parameterize the <jats:italic>e<\/jats:italic>\u2212<jats:italic>h<\/jats:italic> transport asymmetry by the ratio of the hole and electron charging energies <jats:italic>\u03b7<\/jats:italic><jats:sub>e\u2212h<\/jats:sub>. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14\u2009nm-long channel, <jats:italic>\u03b7<\/jats:italic><jats:sub>e\u2212h<\/jats:sub> reaches up to 2.6 for a device with a band gap of 270\u2009meV. The charging energies in this device exceed 100\u2009meV.<\/jats:p>","DOI":"10.1038\/ncomms15491","type":"journal-article","created":{"date-parts":[[2017,5,31]],"date-time":"2017-05-31T12:12:55Z","timestamp":1496232775000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Giant electron-hole transport asymmetry in ultra-short quantum transistors"],"prefix":"10.1038","volume":"8","author":[{"given":"A. 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