{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T18:56:44Z","timestamp":1790017004822,"version":"4.0.1"},"reference-count":25,"publisher":"Springer Science and Business Media LLC","issue":"4","license":[{"start":{"date-parts":[[2009,2,1]],"date-time":"2009-02-01T00:00:00Z","timestamp":1233446400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nature Nanotech"],"published-print":{"date-parts":[[2009,4]]},"DOI":"10.1038\/nnano.2008.418","type":"journal-article","created":{"date-parts":[[2009,2,1]],"date-time":"2009-02-01T18:22:50Z","timestamp":1233512570000},"page":"239-244","source":"Crossref","is-referenced-by-count":157,"title":["Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices"],"prefix":"10.1038","volume":"4","author":[{"given":"C.","family":"O'Dwyer","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"M.","family":"Szachowicz","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"G.","family":"Visimberga","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"V.","family":"Lavayen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"S. B.","family":"Newcomb","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C. M. Sotomayor","family":"Torres","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2009,2,1]]},"reference":[{"key":"BFnnano2008418_CR1","doi-asserted-by":"publisher","first-page":"15","DOI":"10.1557\/mrs2000.256","volume":"25","author":"DS Ginely","year":"2000","unstructured":"Ginely, D. S. & Bright, C. Transparent conducting oxides. MRS Bull. 25, 15\u201365 (2000).","journal-title":"MRS Bull."},{"key":"BFnnano2008418_CR2","doi-asserted-by":"publisher","first-page":"2909","DOI":"10.1021\/nl062213d","volume":"6","author":"Q Wan","year":"2006","unstructured":"Wan, Q. et al. High-performance transparent conducting oxide nanowires. Nano Lett. 6, 2909\u20132915 (2006).","journal-title":"Nano Lett."},{"key":"BFnnano2008418_CR3","doi-asserted-by":"publisher","first-page":"3332","DOI":"10.1143\/JJAP.40.3332","volume":"40","author":"M Sawada","year":"2001","unstructured":"Sawada, M., Higuchi, M., Kondo, S. & Saka, H. Characteristics of indium-tin-oxide\/silver\/indium-tin-oxide sandwich films and their application to simple-matrix liquid-crystal displays. Jpn J. Appl. Phys. 40, 3332\u20133336 (2001).","journal-title":"Jpn J. Appl. Phys."},{"key":"BFnnano2008418_CR4","doi-asserted-by":"publisher","first-page":"5371","DOI":"10.1063\/1.1461068","volume":"91","author":"H Kim","year":"2002","unstructured":"Kim, H., Horwitz, J. S., Kim, W. H., Kafafi, Z. H. & Chrisey, D. B. Highly oriented indium tin oxide films for high efficiency organic light-emitting diodes. J. Appl. Phys. 91, 5371\u20135376 (2002).","journal-title":"J. Appl. Phys."},{"key":"BFnnano2008418_CR5","doi-asserted-by":"publisher","first-page":"499","DOI":"10.1016\/0257-8972(93)90290-5","volume":"62","author":"RA Synowicki","year":"1993","unstructured":"Synowicki, R. A., Hale, J. S., Ianno, N. J. & Woollam, J. A. Low earth orbit effects on indium tin oxide and polyester and comparison with laboratory simulations. Surf. Coat. Technol. 62, 499\u2013503 (1993).","journal-title":"Surf. Coat. Technol."},{"key":"BFnnano2008418_CR6","doi-asserted-by":"publisher","first-page":"3041","DOI":"10.1021\/nl0715037","volume":"7","author":"D-W Kim","year":"2007","unstructured":"Kim, D.-W. et al. Highly conductive coaxial SnO2\u2013In2O3 heterostructured nanowires for Li ion battery electrodes. Nano Lett. 7, 3041\u20133045 (2007).","journal-title":"Nano Lett."},{"key":"BFnnano2008418_CR7","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/S0040-6090(02)00163-3","volume":"411","author":"CG Granqvist","year":"2002","unstructured":"Granqvist, C. G. & Hult\u00e5ker, A. Transparent and conducting ITO films: new developments and applications. Thin Solid Films 411, 1\u20135 (2002).","journal-title":"Thin Solid Films"},{"key":"BFnnano2008418_CR8","doi-asserted-by":"publisher","first-page":"851","DOI":"10.1126\/science.291.5505.851","volume":"291","author":"Y Cui","year":"2006","unstructured":"Cui, Y. & Lieber, C. M. Functional nanoscale electronic devices assembled using silicon nanowire building blocks. Science 291, 851\u2013853 (2006).","journal-title":"Science"},{"key":"BFnnano2008418_CR9","doi-asserted-by":"publisher","first-page":"4398","DOI":"10.1021\/jp046354k","volume":"109","author":"Y-J Hsu","year":"2005","unstructured":"Hsu, Y.-J. & Lu, S.-Y. Vapor\u2013solid growth of Sn nanowires: Growth mechanism and superconductivity. J. Phys. Chem. B 109, 4398\u20134403 (2005).","journal-title":"J. Phys. Chem. B"},{"key":"BFnnano2008418_CR10","doi-asserted-by":"publisher","first-page":"622","DOI":"10.1002\/smll.200600495","volume":"3","author":"J Zhou","year":"2007","unstructured":"Zhou, J. et al. Vertically aligned Zn2SiO4 nanotube\/ZnO nanowire heterojunction arrays. Small 3, 622\u2013626 (2007).","journal-title":"Small"},{"key":"BFnnano2008418_CR11","doi-asserted-by":"publisher","first-page":"49","DOI":"10.1016\/j.mser.2006.04.002","volume":"52","author":"JG Lu","year":"2006","unstructured":"Lu, J. G., Chang, P. & Fan, Z. Quasi-one-dimensional metal oxide materials\u2014Synthesis, properties and applications. Mater. Sci. Eng. R 52, 49\u201391 (2006).","journal-title":"Mater. Sci. Eng. R"},{"key":"BFnnano2008418_CR12","doi-asserted-by":"publisher","first-page":"1936","DOI":"10.1021\/cg050524g","volume":"6","author":"MC Johnson","year":"2006","unstructured":"Johnson, M. C., Aloni, S., McCready, D. E. & Bourret-Courchesne, E. Controlled vapour\u2013liquid\u2013solid growth of indium, gallium and tin oxide nanowires via chemical vapor transport. Cryst. Growth Des. 6, 1936\u20131941 (2006).","journal-title":"Cryst. Growth Des."},{"key":"BFnnano2008418_CR13","doi-asserted-by":"publisher","first-page":"925","DOI":"10.1021\/nl0342186","volume":"3","author":"P Nguyen","year":"2003","unstructured":"Nguyen, P. et al. Epitaxial directional growth of indium-doped tin oxide nanowire arrays. Nano Lett. 3, 925\u2013928 (2003).","journal-title":"Nano Lett."},{"key":"BFnnano2008418_CR14","doi-asserted-by":"publisher","first-page":"489","DOI":"10.1038\/nature04796","volume":"441","author":"J Xiang","year":"2006","unstructured":"Xiang, J. et al. Ge\/Si nanowire heterostructures as high-performance field-effect transistors. Nature 441, 489\u2013493 (2006).","journal-title":"Nature"},{"key":"BFnnano2008418_CR15","doi-asserted-by":"publisher","first-page":"455","DOI":"10.1038\/nmat1387","volume":"4","author":"M Law","year":"2005","unstructured":"Law, M., Greene, L. E., Johnson, J. C., Saykally, R. & Yang, P. D. Nanowire dye-sensitized solar cells. Nature Mater. 4, 455\u2013459 (2005).","journal-title":"Nature Mater."},{"key":"BFnnano2008418_CR16","doi-asserted-by":"publisher","first-page":"2463","DOI":"10.1021\/nl0712217","volume":"7","author":"EN Dattoli","year":"2002","unstructured":"Dattoli, E. N. et al. Fully transparent thin-film transistor devices based on SnO2 nanowires. Nano Lett. 7, 2463\u20132469 (2002).","journal-title":"Nano Lett."},{"key":"BFnnano2008418_CR17","doi-asserted-by":"publisher","first-page":"355","DOI":"10.1038\/nmat908","volume":"2","author":"DL Wang","year":"2003","unstructured":"Wang, D. L. & Lieber, C. M. Inorganic materials: Nanocrystals branch out. Nature Mater. 2, 355\u2013356 (2003).","journal-title":"Nature Mater."},{"key":"BFnnano2008418_CR18","first-page":"1","volume":"13","author":"LJ van der Pauw","year":"1958","unstructured":"van der Pauw, L. J. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Repts. 13, 1\u20139 (1958).","journal-title":"Philips Res. Repts."},{"key":"BFnnano2008418_CR19","doi-asserted-by":"publisher","first-page":"123102","DOI":"10.1063\/1.2345278","volume":"89","author":"Q Wan","year":"2006","unstructured":"Wan, Q., Feng P. & Wang T. H. Vertically aligned tin-doped indium oxide nanowire arrays: Epitaxial growth and electron field emission properties. Appl. Phys. Lett. 89, 123102 (2006).","journal-title":"Appl. Phys. Lett."},{"key":"BFnnano2008418_CR20","doi-asserted-by":"publisher","first-page":"2785","DOI":"10.1021\/nl061833b","volume":"6","author":"L Zhang","year":"2006","unstructured":"Zhang, L., Tu, R. & Dai, H. J. Parallel core\u2013shell metal\u2013dielectric\u2013semiconductor germanium nanowires for high-current surround-gate field-effect transistors. Nano Lett. 6, 2785\u20132789 (2006).","journal-title":"Nano Lett."},{"key":"BFnnano2008418_CR21","doi-asserted-by":"publisher","first-page":"651","DOI":"10.1021\/nl0498536","volume":"4","author":"P Nguyen","year":"2004","unstructured":"Nguyen, P. et al. Direct integration of metal oxide nanowire in vertical field-effect transistor. Nano Lett. 4, 651\u2013657 (2004).","journal-title":"Nano Lett."},{"key":"BFnnano2008418_CR22","doi-asserted-by":"publisher","first-page":"378","DOI":"10.1038\/nnano.2007.151","volume":"2","author":"S Ju","year":"2007","unstructured":"Ju, S. et al. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotech. 2, 378\u2013384 (2007).","journal-title":"Nature Nanotech."},{"key":"BFnnano2008418_CR23","doi-asserted-by":"publisher","first-page":"801","DOI":"10.1002\/adma.200701015","volume":"20","author":"JK Kim","year":"2008","unstructured":"Kim, J. K. et al. Light extraction enhancement of GaInN light emitting diodes by graded refractive index indium tin oxide anti-reflection contact. Adv. Mater. 20, 801\u2013804 (2008).","journal-title":"Adv. Mater."},{"key":"BFnnano2008418_CR24","doi-asserted-by":"publisher","first-page":"5683","DOI":"10.1103\/PhysRevB.40.5683","volume":"40","author":"J Weber","year":"1989","unstructured":"Weber, J. & Alonso, I. Near-band-gap photoluminescence of Si\u2013Ge alloys. Phys. Rev. B 40, 5683\u20135693 (1989).","journal-title":"Phys. Rev. B"},{"key":"BFnnano2008418_CR25","doi-asserted-by":"publisher","first-page":"2174","DOI":"10.1063\/1.110575","volume":"63","author":"I Schnitzer","year":"1993","unstructured":"Schnitzer, I., Yablonovitch E., Caneau, C., Gmitter, T. J. & Scherer, A. 30% external quantum efficiency from surface textured, thin-film light-emitting diodes. Appl. Phys. Lett. 63, 2174\u20132176 (1993).","journal-title":"Appl. Phys. Lett."}],"container-title":["Nature Nanotechnology"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/www.nature.com\/articles\/nnano.2008.418.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/www.nature.com\/articles\/nnano.2008.418","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/www.nature.com\/articles\/nnano.2008.418.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,5,19]],"date-time":"2023-05-19T00:14:24Z","timestamp":1684455264000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/nnano.2008.418"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2009,2,1]]},"references-count":25,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2009,4]]}},"alternative-id":["BFnnano2008418"],"URL":"https:\/\/doi.org\/10.1038\/nnano.2008.418","relation":{},"ISSN":["1748-3387","1748-3395"],"issn-type":[{"value":"1748-3387","type":"print"},{"value":"1748-3395","type":"electronic"}],"subject":[],"published":{"date-parts":[[2009,2,1]]}}}