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The AlScN material has unique advantages including immense remnant polarization, superior temperature stability and good lattice-match to other III-nitrides, making it easy to integrate with the existing advanced III-nitrides material and device technologies. However, due to the large band-gap, strong coercive field, and low photo-generated carrier generation and separation efficiency, it is difficult for AlScN itself to accumulate enough photo-generated carriers at the surface\/interface to induce polarization inversion, limiting its application in in-memory sensing and computing. In this work, an electro-optic duplex memristor on a GaN\/AlScN hetero-structure based Schottky diode has been realized. This two-terminal memristor shows good electrical and opto-electrical nonvolatility and reconfigurability. For both electrical and opto-electrical modes, the current on\/off ratio can reach the magnitude of 10\n                    <jats:sup>4<\/jats:sup>\n                    , and the resistance states can be effectively reset, written and long-termly stored. Based on this device, the \u201cIMP\u201d truth table and the logic \u201cFalse\u201d can be successfully reproduced, indicating the huge potential of the device in the field of in-memory sensing and computing.\n                  <\/jats:p>","DOI":"10.1038\/s41377-024-01422-4","type":"journal-article","created":{"date-parts":[[2024,3,29]],"date-time":"2024-03-29T01:01:50Z","timestamp":1711674110000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":43,"title":["Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors"],"prefix":"10.1038","volume":"13","author":[{"given":"Zhiwei","family":"Xie","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ke","family":"Jiang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shanli","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jianwei","family":"Ben","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mingrui","family":"Liu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shunpeng","family":"Lv","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yang","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuping","family":"Jia","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaojuan","family":"Sun","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5353-1460","authenticated-orcid":false,"given":"Dabing","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2024,3,29]]},"reference":[{"key":"1422_CR1","doi-asserted-by":"publisher","first-page":"197","DOI":"10.1038\/372197a0","volume":"372","author":"K Kyuma","year":"1994","unstructured":"Kyuma, K. et al. 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