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Conventional MIR emitters based on III\u2013V heterostructures rely on complex epitaxial growth on rigid lattice-matched substrates and suffer from limited integration compatibility with CMOS or flexible platforms. Recent MIR emitters based on two-dimensional (2D) materials such as black phosphorus (BP) is more suitable for on-chip applications but faces challenges related to stability and emission efficiency. Based on the recently discovered highly efficient photoluminescence of Te, we demonstrate a gate-tunable mid-infrared light-emitting diode based on a van der Waals heterojunction formed by multilayer transition metal dichalcogenide (TMD) MoS\n                    <jats:sub>2<\/jats:sub>\n                    and tellurium (Te). The device emits polarized electroluminescence (EL) centered at 3.5\u2009\u03bcm under forward bias at 25\u2009K, and the EL persists up to 80\u2009K with reduced intensity. Gate control of the MoS\n                    <jats:sub>2<\/jats:sub>\n                    Fermi level modulates the band alignment and injection efficiency, enabling dynamic tuning of the EL intensity. The emission remains spectrally stable under varying bias and gating, indicating robust band-edge recombination. These results establish the Te\/TMD heterostructure as a promising platform for integrated polarized mid-infrared optoelectronics.\n                  <\/jats:p>","DOI":"10.1038\/s41377-026-02402-6","type":"journal-article","created":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T01:30:10Z","timestamp":1785115810000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Gate-tunable mid-infrared electroluminescence from Te\/MoS2 p-n heterojunctions"],"prefix":"10.1038","volume":"15","author":[{"given":"Shiyu","family":"Wang","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1679-037X","authenticated-orcid":false,"given":"Delang","family":"Liang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhi","family":"Zheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mingyang","family":"Qin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuchun","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jie","family":"Sheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shula","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lin","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changgan","family":"Zeng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3335-3067","authenticated-orcid":false,"given":"Anlian","family":"Pan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4875-9342","authenticated-orcid":false,"given":"Jinluo","family":"Cheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0898-4548","authenticated-orcid":false,"given":"Dong","family":"Sun","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2026,7,27]]},"reference":[{"key":"2402_CR1","first-page":"26","volume":"6","author":"R De Palo","year":"2025","unstructured":"De Palo, R. et al. 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