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Here, we design and fabricate arrays of CMOS-compatible silicon cavities on sapphire with extreme subwavelength transverse mode sizes of only 30\u201340\u2009nm (\n                    <jats:inline-formula>\n                      <jats:alternatives>\n                        <jats:tex-math>$${{\\bf{V}}}{{\\boldsymbol{\\sim }}}{{{\\boldsymbol{\\lambda }}}}^{{{\\boldsymbol{3}}}}\/{{\\boldsymbol{2500}}}$$<\/jats:tex-math>\n                        <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                          <mml:mi>V<\/mml:mi>\n                          <mml:mi>~<\/mml:mi>\n                          <mml:msup>\n                            <mml:mrow>\n                              <mml:mi>\u03bb<\/mml:mi>\n                            <\/mml:mrow>\n                            <mml:mrow>\n                              <mml:mi>3<\/mml:mi>\n                            <\/mml:mrow>\n                          <\/mml:msup>\n                          <mml:mo>\/<\/mml:mo>\n                          <mml:mi>2500<\/mml:mi>\n                        <\/mml:math>\n                      <\/jats:alternatives>\n                    <\/jats:inline-formula>\n                    ). These cavities are engineered for deterministic coupling to a monolayer (or few-layer) excitonic material, producing strong near-field localization directly beneath the 2D material. Photoluminescence (PL) measurements show reproducible tenfold raw enhancement relative to bare silicon, which corresponds to a \u201cper-area\u201d normalized enhancement on the order of 10\n                    <jats:sup>3<\/jats:sup>\n                    , accounting for the small area of the deeply subwavelength mode volume, consistent with numerical simulations that account for material absorption and fabrication tolerances. Furthermore, time-resolved PL measurements reveal pronounced lifetime shortening and non-exponential dynamics, indicating cavity-mediated exciton-exciton interactions. The optimized cavity geometry enhances the far-field collection efficiency and supports scalable integration with van der Waals semiconductors. Our results show that the arrays of topology-optimized dielectric cavities are a versatile, scalable platform for controlling excitonic emission and interactions, which creates new opportunities in nonlinear optics, optoelectronics, and quantum photonics.\n                  <\/jats:p>","DOI":"10.1038\/s41377-026-02436-w","type":"journal-article","created":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T02:22:15Z","timestamp":1791858135000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Topology-optimized dielectric cavities for enhanced excitonic light emission from WSe2"],"prefix":"10.1038","volume":"15","author":[{"given":"Owen","family":"Matthiessen","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-9842-5725","authenticated-orcid":false,"given":"Brandon","family":"Triplett","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Omer","family":"Yesilyurt","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-4731-6608","authenticated-orcid":false,"given":"Davide","family":"Cassara","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Karthik","family":"Pagadala","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Morris M.","family":"Yang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Andres E.","family":"Llacsahuanga Allcca","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-9482-0199","authenticated-orcid":false,"given":"Hamza","family":"Ather","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8296-8802","authenticated-orcid":false,"given":"Colton","family":"Fruhling","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-0446-901X","authenticated-orcid":false,"given":"Abhishek Bharatbhai","family":"Solanki","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yong P.","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4549-1870","authenticated-orcid":false,"given":"Hadiseh","family":"Alaeian","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Alexander V.","family":"Kildishev","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8976-1102","authenticated-orcid":false,"given":"Vladimir M.","family":"Shalaev","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4534-8249","authenticated-orcid":false,"given":"Federico","family":"Capasso","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8905-2605","authenticated-orcid":false,"given":"Alexandra","family":"Boltasseva","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3138-8488","authenticated-orcid":false,"given":"Vahagn","family":"Mkhitaryan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2026,10,13]]},"reference":[{"key":"2436_CR1","doi-asserted-by":"publisher","first-page":"165419","DOI":"10.1103\/PhysRevB.82.165419","volume":"82","author":"EJR Vesseur","year":"2010","unstructured":"Vesseur, E. 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