{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,11,9]],"date-time":"2026-11-09T07:36:50Z","timestamp":1794209810123,"version":"4.8.0"},"reference-count":42,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2024,2,19]],"date-time":"2024-02-19T00:00:00Z","timestamp":1708300800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2024,2,19]],"date-time":"2024-02-19T00:00:00Z","timestamp":1708300800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Nat Commun"],"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, a solution for non-volatile, deterministic switching of vdWMMs at room temperature has been missing, limiting the prospects of their adoption into commercial spintronic devices. Here, we report the first demonstration of current-controlled non-volatile, deterministic magnetization switching in a vdW magnetic material at room temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW ferromagnet Fe<jats:sub>3<\/jats:sub>GaTe<jats:sub>2<\/jats:sub> using a Pt spin-Hall layer up to 320\u2009K, with a threshold switching current density as low as <jats:inline-formula><jats:alternatives><jats:tex-math>$${J}_{{{{{{\\rm{sw}}}}}}}=$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:msub>\n                    <mml:mrow>\n                      <mml:mi>J<\/mml:mi>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mi>sw<\/mml:mi>\n                    <\/mml:mrow>\n                  <\/mml:msub>\n                  <mml:mo>=<\/mml:mo>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>1.69 <jats:inline-formula><jats:alternatives><jats:tex-math>$$\\times$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mo>\u00d7<\/mml:mo>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula> 10<jats:sup>6<\/jats:sup> A cm<jats:sup>\u22122<\/jats:sup> at room temperature. We have also quantitatively estimated the anti-damping-like SOT efficiency of our Fe<jats:sub>3<\/jats:sub>GaTe<jats:sub>2<\/jats:sub>\/Pt bilayer system to be <jats:inline-formula><jats:alternatives><jats:tex-math>$${\\xi }_{{{{{{\\rm{DL}}}}}}}=0.093$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:msub>\n                    <mml:mrow>\n                      <mml:mi>\u03be<\/mml:mi>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mi>DL<\/mml:mi>\n                    <\/mml:mrow>\n                  <\/mml:msub>\n                  <mml:mo>=<\/mml:mo>\n                  <mml:mn>0.093<\/mml:mn>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>, using the second harmonic Hall voltage measurement technique. These results mark a crucial step in making vdW magnetic materials a viable choice for the development of scalable, energy-efficient spintronic devices.<\/jats:p>","DOI":"10.1038\/s41467-024-45586-4","type":"journal-article","created":{"date-parts":[[2024,2,19]],"date-time":"2024-02-19T11:04:17Z","timestamp":1708340657000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":75,"title":["Current-induced switching of a van der Waals ferromagnet at room temperature"],"prefix":"10.1038","volume":"15","author":[{"given":"Shivam N.","family":"Kajale","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Thanh","family":"Nguyen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Corson A.","family":"Chao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"David C.","family":"Bono","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Artittaya","family":"Boonkird","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7055-6368","authenticated-orcid":false,"given":"Mingda","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9662-1666","authenticated-orcid":false,"given":"Deblina","family":"Sarkar","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2024,2,19]]},"reference":[{"key":"45586_CR1","doi-asserted-by":"crossref","unstructured":"Hirohata, A. et al. Review on spintronics: principles and device applications. J. Magn. Magn. Mater. 509, 166711 (2020).","DOI":"10.1016\/j.jmmm.2020.166711"},{"key":"45586_CR2","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/TCAD.2015.2481793","volume":"35","author":"X Fong","year":"2016","unstructured":"Fong, X. et al. Spin-transfer torque devices for logic and memory: prospects and perspectives. IEEE Trans. Comput. Des. Integr. Circuits Syst. 35, 1\u201322 (2016).","journal-title":"IEEE Trans. Comput. Des. Integr. Circuits Syst."},{"key":"45586_CR3","doi-asserted-by":"publisher","first-page":"1782","DOI":"10.1109\/JPROC.2016.2601163","volume":"104","author":"H Ohno","year":"2016","unstructured":"Ohno, H., Stiles, M. D. & Dieny, B. Spintronics. Proc. IEEE 104, 1782\u20131786 (2016).","journal-title":"Proc. IEEE"},{"key":"45586_CR4","doi-asserted-by":"publisher","first-page":"360","DOI":"10.1038\/s41928-019-0360-9","volume":"3","author":"J Grollier","year":"2020","unstructured":"Grollier, J. et al. Neuromorphic spintronics. Nat. Electron. 3, 360\u2013370 (2020).","journal-title":"Nat. Electron."},{"key":"45586_CR5","doi-asserted-by":"crossref","unstructured":"Kaiser, J. & Datta, S. Probabilistic computing with p-bits. Appl. Phys. Lett. 119, 150503 (2021).","DOI":"10.1063\/5.0067927"},{"key":"45586_CR6","doi-asserted-by":"crossref","unstructured":"Camsari, K. Y., Sutton, B. M. & Datta, S. P-bits for probabilistic spin logic. Appl. Phys. Rev. 6, 011305 (2019).","DOI":"10.1063\/1.5055860"},{"key":"45586_CR7","doi-asserted-by":"publisher","first-page":"7180","DOI":"10.1109\/TED.2022.3214168","volume":"69","author":"C Safranski","year":"2022","unstructured":"Safranski, C. et al. Reliable sub-nanosecond switching in magnetic tunnel junctions for MRAM applications. IEEE Trans. Electron Dev. 69, 7180\u20137183 (2022).","journal-title":"IEEE Trans. Electron Dev."},{"key":"45586_CR8","doi-asserted-by":"publisher","first-page":"2040","DOI":"10.1021\/acs.nanolett.0c04652","volume":"21","author":"C Safranski","year":"2021","unstructured":"Safranski, C. et al. Demonstration of nanosecond operation in stochastic magnetic tunnel junctions. Nano Lett. 21, 2040\u20132045 (2021).","journal-title":"Nano Lett."},{"key":"45586_CR9","doi-asserted-by":"crossref","unstructured":"Gajek, M. et al. Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy. Appl. Phys. Lett. 100, 132408 (2012).","DOI":"10.1063\/1.3694270"},{"key":"45586_CR10","doi-asserted-by":"publisher","first-page":"265","DOI":"10.1038\/nature22060","volume":"546","author":"C Gong","year":"2017","unstructured":"Gong, C. et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 546, 265\u2013269 (2017).","journal-title":"Nature"},{"key":"45586_CR11","doi-asserted-by":"publisher","first-page":"270","DOI":"10.1038\/nature22391","volume":"546","author":"B Huang","year":"2017","unstructured":"Huang, B. et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 546, 270\u2013273 (2017).","journal-title":"Nature"},{"key":"45586_CR12","doi-asserted-by":"publisher","first-page":"778","DOI":"10.1038\/s41563-018-0149-7","volume":"17","author":"Z Fei","year":"2018","unstructured":"Fei, Z. et al. Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2. Nat. Mater. 17, 778\u2013782 (2018).","journal-title":"Nat. Mater."},{"key":"45586_CR13","doi-asserted-by":"publisher","first-page":"216","DOI":"10.1038\/546216a","volume":"546","author":"N Samarth","year":"2017","unstructured":"Samarth, N. Magnetism in flatland. Nature 546, 216\u2013217 (2017).","journal-title":"Nature"},{"key":"45586_CR14","doi-asserted-by":"publisher","unstructured":"Kajale, S. N. et al. Two-dimensional magnetic materials for spintronic applications. Nano Res. https:\/\/doi.org\/10.1007\/s12274-024-6447-2 (2024).","DOI":"10.1007\/s12274-024-6447-2"},{"key":"45586_CR15","doi-asserted-by":"crossref","unstructured":"Seo, J. et al. Nearly room temperature ferromagnetism in a magnetic metal-rich van der Waals metal. Sci. Adv. 6, eaay8912 (2020).","DOI":"10.1126\/sciadv.aay8912"},{"key":"45586_CR16","doi-asserted-by":"publisher","first-page":"4436","DOI":"10.1021\/acsnano.8b09660","volume":"13","author":"AF May","year":"2019","unstructured":"May, A. F. et al. Ferromagnetism near room temperature in the cleavable van der Waals crystal Fe5GeTe2. ACS Nano 13, 4436\u20134442 (2019).","journal-title":"ACS Nano"},{"key":"45586_CR17","doi-asserted-by":"publisher","first-page":"4400","DOI":"10.1021\/acs.nanolett.9b01043","volume":"19","author":"M Alghamdi","year":"2019","unstructured":"Alghamdi, M. et al. Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2. Nano Lett. 19, 4400\u20134405 (2019).","journal-title":"Nano Lett."},{"key":"45586_CR18","doi-asserted-by":"publisher","first-page":"2","DOI":"10.1126\/sciadv.aaw8904","volume":"5","author":"X Wang","year":"2019","unstructured":"Wang, X. et al. Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2. Sci. Adv. 5, 2\u20138 (2019).","journal-title":"Sci. Adv."},{"key":"45586_CR19","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1063\/5.0057863","volume":"119","author":"R Fujimura","year":"2021","unstructured":"Fujimura, R. et al. Current-induced magnetization switching at charge-transferred interface between topological insulator (Bi,Sb)2Te3 and van der Waals ferromagnet Fe3GeTe2. Appl. Phys. Lett. 119, 1\u20134 (2021).","journal-title":"Appl. Phys. Lett."},{"key":"45586_CR20","doi-asserted-by":"publisher","first-page":"1029","DOI":"10.1038\/s41563-022-01275-5","volume":"21","author":"IH Kao","year":"2022","unstructured":"Kao, I. H. et al. Deterministic switching of a perpendicularly polarized magnet using unconventional spin\u2013orbit torques in WTe2. Nat. Mater. 21, 1029\u20131034 (2022).","journal-title":"Nat. Mater."},{"key":"45586_CR21","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1002\/adma.202101730","volume":"34","author":"I Shin","year":"2022","unstructured":"Shin, I. et al. Spin\u2013orbit torque switching in an all-Van der Waals heterostructure. Adv. Mater. 34, 1\u20137 (2022).","journal-title":"Adv. Mater."},{"key":"45586_CR22","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1126\/sciadv.abq6833","volume":"8","author":"L Wang","year":"2022","unstructured":"Wang, L. et al. Cascadable in-memory computing based on symmetric writing and readout. Sci. Adv. 8, 1\u201311 (2022).","journal-title":"Sci. Adv."},{"key":"45586_CR23","first-page":"1","volume":"13","author":"G Zhang","year":"2022","unstructured":"Zhang, G. et al. Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy. Nat. Commun. 13, 1\u20138 (2022).","journal-title":"Nat. Commun."},{"key":"45586_CR24","doi-asserted-by":"crossref","unstructured":"Zhu, W. et al. Large room-temperature magnetoresistance in van der Waals ferromagnet\/semiconductor junctions. Chin. Phys. Lett. 39, 128501 (2022).","DOI":"10.1088\/0256-307X\/39\/12\/128501"},{"key":"45586_CR25","doi-asserted-by":"publisher","first-page":"1339","DOI":"10.1039\/D2CE01695H","volume":"25","author":"H Yin","year":"2023","unstructured":"Yin, H. et al. Fe3GaTe2\/MoSe2 ferromagnet\/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices. CrystEngComm 25, 1339\u20131346 (2023).","journal-title":"CrystEngComm"},{"key":"45586_CR26","doi-asserted-by":"publisher","first-page":"5371","DOI":"10.1039\/D2NR06886A","volume":"15","author":"W Jin","year":"2023","unstructured":"Jin, W. et al. Room-temperature spin-valve devices based on Fe3GaTe2\/MoS2\/Fe3GaTe2 2D van der Waals heterojunctions. Nanoscale 15, 5371\u20135378 (2023).","journal-title":"Nanoscale"},{"key":"45586_CR27","doi-asserted-by":"publisher","first-page":"36519","DOI":"10.1021\/acsami.3c06167","volume":"15","author":"W Jin","year":"2023","unstructured":"Jin, W. et al. Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-Based 2D van der Waals heterojunctions. ACS Appl. Mater. Interfaces 15, 36519\u201336526 (2023).","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"45586_CR28","doi-asserted-by":"publisher","first-page":"621","DOI":"10.1038\/nnano.2016.29","volume":"11","author":"S Fukami","year":"2016","unstructured":"Fukami, S., Anekawa, T., Zhang, C. & Ohno, H. A spin-orbit torque switching scheme with collinear magnetic easy axis and current configuration. Nat. Nanotechnol. 11, 621\u2013625 (2016).","journal-title":"Nat. Nanotechnol."},{"key":"45586_CR29","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevApplied.16.024021","volume":"16","author":"YT Liu","year":"2021","unstructured":"Liu, Y. T. et al. Anatomy of type- x spin-orbit-torque switching. Phys. Rev. Appl. 16, 1 (2021).","journal-title":"Phys. Rev. Appl."},{"key":"45586_CR30","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1038\/s41467-018-04018-w","volume":"9","author":"C Tan","year":"2018","unstructured":"Tan, C. et al. Hard magnetic properties in nanoflake van der Waals Fe3GeTe2. Nat. Commun. 9, 1\u20137 (2018).","journal-title":"Nat. Commun."},{"key":"45586_CR31","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevLett.109.096602","volume":"109","author":"L Liu","year":"2012","unstructured":"Liu, L., Lee, O. J., Gudmundsen, T. J., Ralph, D. C. & Buhrman, R. A. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin hall effect. Phys. Rev. Lett. 109, 1\u20135 (2012).","journal-title":"Phys. Rev. Lett."},{"key":"45586_CR32","doi-asserted-by":"publisher","first-page":"587","DOI":"10.1038\/nnano.2013.145","volume":"8","author":"K Garello","year":"2013","unstructured":"Garello, K. et al. Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures. Nat. Nanotechnol. 8, 587\u2013593 (2013).","journal-title":"Nat. Nanotechnol."},{"key":"45586_CR33","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevB.89.144425","volume":"89","author":"M Hayashi","year":"2014","unstructured":"Hayashi, M., Kim, J., Yamanouchi, M. & Ohno, H. Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements. Phys. Rev. B Condens. Matter Mater. Phys. 89, 1\u201315 (2014).","journal-title":"Phys. Rev. B Condens. Matter Mater. Phys."},{"key":"45586_CR34","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevB.90.224427","volume":"90","author":"CO Avci","year":"2014","unstructured":"Avci, C. O. et al. Interplay of spin-orbit torque and thermoelectric effects in ferromagnet\/normal-metal bilayers. Phys. Rev. B - Condens. Matter Mater. Phys. 90, 1\u201311 (2014).","journal-title":"Phys. Rev. B - Condens. Matter Mater. Phys."},{"key":"45586_CR35","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevB.99.195103","volume":"99","author":"N Roschewsky","year":"2019","unstructured":"Roschewsky, N. et al. Spin-orbit torque and Nernst effect in Bi-Sb\/Co heterostructures. Phys. Rev. B 99, 1\u20135 (2019).","journal-title":"Phys. Rev. B"},{"key":"45586_CR36","doi-asserted-by":"crossref","unstructured":"Zhu, L., Ralph, D. C. & Buhrman, R. A. Maximizing spin-orbit torque generated by the spin Hall effect of Pt. APL Mater. 8, 031308 (2021).","DOI":"10.1063\/5.0059171"},{"key":"45586_CR37","doi-asserted-by":"publisher","first-page":"7482","DOI":"10.1021\/acs.nanolett.0c02965","volume":"20","author":"V Gupta","year":"2020","unstructured":"Gupta, V. et al. Manipulation of the van der Waals magnet Cr2Ge2Te6by spin-orbit torques. Nano Lett. 20, 7482\u20137488 (2020).","journal-title":"Nano Lett."},{"key":"45586_CR38","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevLett.122.217203","volume":"122","author":"\u00d8 Johansen","year":"2019","unstructured":"Johansen, \u00d8., Risingg\u00e5rd, V., Sudb\u00f8, A., Linder, J. & Brataas, A. Current control of magnetism in two-dimensional Fe3GeTe2. Phys. Rev. Lett. 122, 1\u20136 (2019).","journal-title":"Phys. Rev. Lett."},{"key":"45586_CR39","first-page":"1","volume":"33","author":"K Zhang","year":"2021","unstructured":"Zhang, K. et al. Gigantic current control of coercive field and magnetic memory based on nanometer-thin ferromagnetic van der Waals Fe3GeTe2. Adv. Mater. 33, 1\u20138 (2021).","journal-title":"Adv. Mater."},{"key":"45586_CR40","doi-asserted-by":"crossref","unstructured":"Zhang, K. et al. Highly efficient nonvolatile magnetization switching and multi-level states by current in single Van der Waals topological ferromagnet Fe3GeTe2. Adv. Funct. Mater. 31, 2105992 (2021).","DOI":"10.1002\/adfm.202105992"},{"key":"45586_CR41","doi-asserted-by":"crossref","unstructured":"Li, W. et al. Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques. arXiv 2304.10718, (2023).","DOI":"10.1002\/adma.202303688"},{"key":"45586_CR42","doi-asserted-by":"publisher","DOI":"10.5061\/dryad.1rn8pk11k","author":"S Kajale","year":"2024","unstructured":"Kajale, S. Current-induced switching of a van der Waals ferromagnet at room temperature [Dataset]. Dryad https:\/\/doi.org\/10.5061\/dryad.1rn8pk11k (2024).","journal-title":"Dryad"}],"container-title":["Nature Communications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41467-024-45586-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41467-024-45586-4","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41467-024-45586-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,2,19]],"date-time":"2024-02-19T11:05:29Z","timestamp":1708340729000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41467-024-45586-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,2,19]]},"references-count":42,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2024,12]]}},"alternative-id":["45586"],"URL":"https:\/\/doi.org\/10.1038\/s41467-024-45586-4","relation":{},"ISSN":["2041-1723"],"issn-type":[{"value":"2041-1723","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,2,19]]},"assertion":[{"value":"9 July 2023","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"30 January 2024","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"19 February 2024","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}],"article-number":"1485"}}